摘要:
According to one embodiment, a computer system comprises a first memory that stores a first program, a second memory that stores a second program or data, a processor, a first and a second power control circuits. The first power control circuit causes the first memory to operate at a first power consumption when detecting change of an input signal to the processor, and causes the first memory to operate at a second power consumption smaller than the first power consumption and transmits a temporary halt instruction to the processor when the execution of the first program or the second program by the processor is completed. The second power control circuit causes the second memory to operate at a third power consumption before the processor executes the second program, reads or writes the data.The second memory accepts read and write operations while operating at the third power consumption.
摘要:
A virtual memory management apparatus of an embodiment is embedded in a computing machine 80 and is provided with an application program 21, an operating system 22, a volatile memory 11, and a nonvolatile memory 12. The volatile memory 11 is provided with a plurality of clean pages. The nonvolatile memory 12 is provided with a plurality of dirty pages and a page table memory unit 51. The operating system 22 is provided with a virtual memory management unit 23 which includes a page transfer unit 25.
摘要:
According to an aspect of embodiments, there is provided a random number generating circuit including at least one magnetic tunnel junction (MTJ) element and a control circuit. The MTJ element comes into a high resistance state corresponding to a first logical value and also comes into a low resistance state corresponding to a second logical value different from the first logical value. The control circuit supplies the MTJ element with a first current for stochastically reversing the MTJ element from the high resistance state to the low resistance state when the MTJ element is in the high resistance state, and supplies the MTJ element with a second current for stochastically reversing the MTJ element from the low resistance state to the high resistance state when the MTJ element is in the low resistance state.
摘要:
According to one embodiment, a storage apparatus includes: a first inverter; a second inverter; a first storage element having a first state and a second state; and a second storage element having a third state and a fourth state, wherein the first storage element is brought into the first state when a current flows from the first storage element to the first storage element and is brought into the second state when the current flows from the first storage element to the first storage element, wherein the second storage element is brought into the fourth state when a current flows from the second storage element to the second storage element and is brought into the third state when the current flows from the second storage element to the second storage element.
摘要:
According to one embodiment, a computer system comprises a first memory that stores a first program, a second memory that stores a second program or data, a processor, a first and a second power control circuits. The first power control circuit causes the first memory to operate at a first power consumption when detecting change of an input signal to the processor, and causes the first memory to operate at a second power consumption smaller than the first power consumption and transmits a temporary halt instruction to the processor when the execution of the first program or the second program by the processor is completed. The second power control circuit causes the second memory to operate at a third power consumption before the processor executes the second program, reads or writes the data. The second memory accepts read and write operations while operating at the third power consumption.
摘要:
According to an aspect of embodiments, there is provided a random number generating circuit including at least one magnetic tunnel junction (MTJ) element and a control circuit. The MTJ element comes into a high resistance state corresponding to a first logical value and also comes into a low resistance state corresponding to a second logical value different from the first logical value. The control circuit supplies the MTJ element with a first current for stochastically reversing the MTJ element from the high resistance state to the low resistance state when the MTJ element is in the high resistance state, and supplies the MTJ element with a second current for stochastically reversing the MTJ element from the low resistance state to the high resistance state when the MTJ element is in the low resistance state.
摘要:
A virtual memory management apparatus of an embodiment is embedded in a computing machine 80 and is provided with an application program 21, an operating system 22, a volatile memory 11, and a nonvolatile memory 12. The volatile memory 11 is provided with a plurality of clean pages. The nonvolatile memory 12 is provided with a plurality of dirty pages and a page table memory unit 51. The operating system 22 is provided with a virtual memory management unit 23 which includes a page transfer unit 25.
摘要:
In a data transfer scheme using a caching technique and/or a compression technique which is capable of reducing the network load of a network connecting between data transfer devices, correspondences between data and their names are registered at the data transfer devices and the corresponding names are transferred, instead of transferring the data, for those data for which the correspondences are registered, so that it is possible to reduce the amount of transfer data among the data transfer devices. Server side data transfer devices and client side data transfer devices can be provided in multiple-to-one, one-to-multiple, or multiple-to-multiple manners.
摘要:
In a data transfer scheme using a caching technique and/or a compression technique which is capable of reducing the network load of a network connecting between data transfer devices, correspondences between data and their names are registered at the data transfer devices and the corresponding names are transferred, instead of transferring the data, for those data for which the correspondences are registered, so that it is possible to reduce the amount of transfer data among the data transfer devices. Server side data transfer devices and client side data transfer devices can be provided in multiple-to-one, one-to-multiple, or multiple-to-multiple manners.
摘要:
In a data transfer scheme using a caching technique and/or a compression technique which is capable of reducing the network load of a network connecting between data transfer devices, correspondences between data and their names are registered at the data transfer devices and the corresponding names are transferred, instead of transferring the data, for those data for which the correspondences are registered, so that it is possible to reduce the amount of transfer data among the data transfer devices.