公开(公告)号：US20190154473A1

公开(公告)日：2019-05-23

申请号：US15851609

申请日：2017-12-21

Applicant: Industrial Technology Research Institute

Inventor： Sih-Han Li ,  Chih-Sheng Lin ,  Ya-Wen Yang ,  Kuan-Wei Chen ,  Shyh-Shyuan Sheu

IPC: G01D18/00

Abstract: A readout circuit for a sensor and a readout method thereof are provided. The readout circuit includes a reference circuit, a compensated circuit, and a signal processing circuit. The reference circuit provides a direct current (DC) signal. The compensated circuit is coupled to the reference circuit. The compensated circuit obtains an analog sensing signal of the sensor, obtains the DC signal from the reference circuit, and provides a compensated signal according to the analog sensing signal and the DC signal. The signal processing circuit is coupled to the compensated circuit. The signal processing circuit processes the compensated signal to convert the compensated signal into a digital sensing signal. The compensated circuit subtracts the DC signal from the analog sensing signal to provide the compensated signal.

公开(公告)号：US10101175B2

公开(公告)日：2018-10-16

申请号：US15607389

申请日：2017-05-26

Applicant: Industrial Technology Research Institute

Inventor： Sih-Han Li ,  Shyh-Shyuan Sheu ,  Ya-Wen Yang ,  Chih-Ping Cheng ,  Chih-Sheng Lin

IPC: G01D3/02 ,  G01D18/00 ,  H03K17/30

Abstract: A sensor interface circuit and sensor output adjusting method are provided. The sensor interface circuit includes a processor and a gain control circuit. The processor obtains information of a linear region of a sensor to set a configuration corresponding to the sensor. The gain control circuit is coupled to the processor, performs a return-to-zero operation for a maximum electronic value and a minimum electronic value corresponding to the linear region and performs a full-scale operation for a slope of the linear region according to the maximum input range of an analog-to-digital converter which is a subsequent-stage circuit of the sensor interface circuit.

公开(公告)号：US09887007B1

公开(公告)日：2018-02-06

申请号：US15381703

申请日：2016-12-16

Applicant: Industrial Technology Research Institute

Inventor： Chia-Chen Kuo ,  Shyh-Shyuan Sheu

IPC: G11C5/06 ,  G11C13/00

CPC classification number: G11C13/0069 ,  G11C13/003 ,  G11C13/0061 ,  G11C2013/0066 ,  G11C2013/0071 ,  G11C2213/79

Abstract: A variable-resistance memory and a writing method thereof are provided. The variable-resistance memory includes a variable-resistance memory cell, a voltage-signal-generation circuit, a switch circuit, a detection circuit, and a controller. The variable-resistance memory cell includes a variable-resistance component and a transistor. The voltage-signal-generation circuit is coupled to the control terminal of the transistor. The switch circuit is coupled to the variable-resistance component and transistor. The detection circuit is coupled to a voltage source and the switch circuit. The controller is coupled to the voltage-signal-generation circuit, switch circuit, and detection circuit. When the controller performs a writing operation on the variable-resistance memory cell, the voltage-signal-generation circuit provides a voltage signal to the transistor, and the detection circuit continuously detects whether the variable-resistance component performs a resistance conversion. If the resistance conversion occurs, then the controller stops the writing operation.

公开(公告)号：US20170122892A1

公开(公告)日：2017-05-04

申请号：US14961906

申请日：2015-12-08

Applicant: Industrial Technology Research Institute

Inventor： Sih-Han Li ,  Chih-Sheng Lin ,  Kuan-Wei Chen ,  Erh-Hao Chen ,  Shyh-Shyuan Sheu

IPC: G01N27/12

CPC classification number: G01N27/121 ,  G01N27/127

Abstract: A sensor device and a method of manufacturing the same are provided. The sensor device includes a substrate, a plurality of sensing electrodes, a humidity nanowire sensor, a temperature nanowire sensor, and a gas nanowire sensor. The sensing electrodes are formed on the substrate, and the humidity, the temperature and the gas nanowire sensors are also on the substrate. The humidity nanowire sensor includes an exposed first nanowire sensing region, the temperature nanowire sensor includes a second nanowire sensing region, and the gas nanowire sensor includes a third nanowire sensing region.

公开(公告)号：US20160118120A1

公开(公告)日：2016-04-28

申请号：US14749651

申请日：2015-06-25

Applicant: Industrial Technology Research Institute

Inventor： Pei-Ling Tseng ,  Chia-Chen Kuo ,  Shyh-Shyuan Sheu ,  Meng-Fan Chang

IPC: G11C13/00

CPC classification number: G11C13/0097 ,  G11C13/0023 ,  G11C13/0026 ,  G11C13/0028 ,  G11C13/0061 ,  G11C13/0069 ,  G11C2013/0071 ,  G11C2213/79

Abstract: A resistive memory system, a driver circuit thereof and a method for setting resistances thereof are provided. The resistive memory system includes a memory array, a row selection circuit, a first control circuit and a second control circuit. The memory array has a plurality of resistive memory cells. The row selection circuit is used for activating the resistive memory cells. The first control circuit and the second control circuit are coupled to the resistive memory cells. When each of resistive memory cells is set, the first control circuit and the second control circuit respectively provide a set voltage and a ground voltage to the each of resistive memory cells to form a set current, and the set current is clamped by at least one of the first control circuit and the second control circuit.

Abstract translation: 提供了一种电阻式存储器系统，其驱动电路及其电阻设定方法。 电阻式存储器系统包括存储器阵列，行选择电路，第一控制电路和第二控制电路。 存储器阵列具有多个电阻存储单元。 行选择电路用于激活电阻式存储单元。 第一控制电路和第二控制电路耦合到电阻存储器单元。 当每个电阻性存储器单元被设置时，第一控制电路和第二控制电路分别向每个电阻存储器单元提供一个设定电压和一个接地电压以形成一个设定电流，并且将该设定电流钳位在至少一个 的第一控制电路和第二控制电路。

公开(公告)号：US09136843B2

公开(公告)日：2015-09-15

申请号：US14447531

申请日：2014-07-30

Applicant: Industrial Technology Research Institute

Inventor： Pei-Ling Tseng ,  Keng-Li Su ,  Chih-Sheng Lin ,  Shyh-Shyuan Sheu

IPC: H03K19/00 ,  H03K19/003 ,  G01R31/28 ,  H01L21/66

CPC classification number: H03K19/003 ,  G01R31/28 ,  H01L22/22 ,  H01L23/481 ,  H01L25/0657 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2924/0002 ,  H03K19/0008 ,  H01L2924/00

Abstract: TSV repair circuit of a semiconductor device includes a first chip, a second chip, at least two TSV, at least two data path circuits and an output logic circuit. Each data path circuit comprises an input driving circuit, a TSV detection circuit, a memory device, a protection circuit and a power control circuit. The TSV detection circuit detects a TSV status, the memory device keeps the TSV status, the protection circuit determines whether to pull a first end of the TSV to a ground voltage according to the TSV status, and the power control circuit prevents a leakage current of a power voltage from flowing through a substrate.

Abstract translation: 半导体器件的TSV修复电路包括第一芯片，第二芯片，至少两个TSV，至少两个数据路径电路和输出逻辑电路。 每个数据路径电路包括输入驱动电路，TSV检测电路，存储器件，保护电路和功率控制电路。 TSV检测电路检测TSV状态，存储器件保持TSV状态，保护电路根据TSV状态确定是否将TSV的第一端拉至接地电压，并且功率控制电路防止漏电流 来自基板的电源电压。