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公开(公告)号：US09902612B2
公开(公告)日：2018-02-27
申请号：US15629834
申请日：2017-06-22
Applicant: Infineon Technologies AG
Inventor： Alfons Dehe , Stefan Barzen , Ulrich Krumbein , Wolfgang Friza , Wolfgang Klein
CPC classification number: B81B3/0072 , B81B2203/0109 , B81C1/00325
Abstract: A method for forming a microelectromechanical device may provide forming a first layer at least one of in or over a semiconductor carrier; forming a second layer at least one of in or over at least a central region of the first layer, such that a peripheral region of the first layer is at least partially free of the second layer; removing material under at least a central region of the second layer to release at least one of the central region of the second layer or a central region of the first layer; and/or removing material under at least the peripheral region of the first layer to such that the second layer is supported by the semiconductor carrier via the first layer.
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22.发明授权Integrated circuits with magnetic core inductors and methods of fabrications thereof 有权具有磁芯电感器的集成电路及其制造方法公开(公告)号：US08975612B2
公开(公告)日：2015-03-10
申请号：US14219944
申请日：2014-03-19
Applicant: Infineon Technologies AG
Inventor： Renate Hofmann , Carsten Ahrens , Wolfgang Klein , Alexander Glas
CPC classification number: H01L28/10 , H01F27/2804 , H01F41/046 , H01F2017/0066 , H01L23/5227 , H01L25/16 , H01L2924/0002 , H01L2924/00
Abstract: In one embodiment, a method of forming a semiconductor device includes forming a first inductor coil within and/or over a substrate. The first inductor coil is formed adjacent a top side of the substrate. First trenches are formed within the substrate adjacent the first inductor coil. The first trenches are filled at least partially with a magnetic fill material. At least a first portion of the substrate underlying the first inductor coil is thinned. A backside magnetic layer is formed under the first portion of the substrate. The backside magnetic layer and the magnetic fill material form at least a part of a magnetic core region of the first inductor coil.
Abstract translation: 在一个实施例中，形成半导体器件的方法包括在衬底之内和/或之上形成第一电感线圈。 第一电感线圈形成在衬底的顶侧附近。 第一沟槽形成在与第一电感线圈相邻的衬底内。 至少部分地用磁性填充材料填充第一沟槽。 至少第一电感线圈下面的衬底的第一部分变薄。 背面磁性层形成在基板的第一部分之下。 背面磁性层和磁性填充材料形成第一电感线圈的磁芯区域的至少一部分。
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23.发明申请Integrated Circuits With Magnetic Core Inductors And Methods of Fabrications Thereof 有权具有磁芯电感器的集成电路及其制造方法公开(公告)号：US20130260483A1
公开(公告)日：2013-10-03
申请号：US13903935
申请日：2013-05-28
Applicant: Infineon Technologies AG
Inventor： Renate Hofmann , Carsten Ahrens , Wolfgang Klein , Alexander Glas
IPC: H01L49/02
CPC classification number: H01L28/10 , H01F27/2804 , H01F41/046 , H01F2017/0066 , H01L23/5227 , H01L25/16 , H01L2924/0002 , H01L2924/00
Abstract: In one embodiment, a method of forming a semiconductor device includes forming a first inductor coil within and/or over a substrate. The first inductor coil is formed adjacent a top side of the substrate. First trenches are formed within the substrate adjacent the first inductor coil. The first trenches are filled at least partially with a magnetic fill material. At least a first portion of the substrate underlying the first inductor coil is thinned. A backside magnetic layer is formed under the first portion of the substrate. The backside magnetic layer and the magnetic fill material form at least a part of a magnetic core region of the first inductor coil.
Abstract translation: 在一个实施例中，形成半导体器件的方法包括在衬底之内和/或之上形成第一电感线圈。 第一电感线圈形成在衬底的顶侧附近。 第一沟槽形成在与第一电感线圈相邻的衬底内。 至少部分地用磁性填充材料填充第一沟槽。 至少第一电感线圈下面的衬底的第一部分变薄。 背面磁性层形成在基板的第一部分之下。 背面磁性层和磁性填充材料形成第一电感线圈的磁芯区域的至少一部分。
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公开(公告)号：US11835041B2
公开(公告)日：2023-12-05
申请号：US16922530
申请日：2020-07-07
Applicant: Infineon Technologies AG
Inventor： Martin Seidl , Alfons Dehe , Daniel Fruechtl , Wolfgang Klein , Ulrich Krumbein , Johann Strasser , Matthias Vobl
CPC classification number: F04B53/1047 , F04B43/046 , F16K99/0015 , F16K2099/0094
Abstract: A MEMS pump includes a basis structure, a membrane structure opposing the basis structure and being deflectable parallel to a surface normal of the basis structure and includes a pump chamber between the basis structure and the membrane structure wherein a volume of the pump chamber is based on a position of the membrane structure with respect to the basis structure. The MEMS pump includes a passage for letting a fluid pass into the pump chamber or exit the pump chamber, wherein the passage is arranged in-plane with respect to the pump chamber. The MEMS pump includes a valve structure coupled to the passage for connecting, in a first state, the passage to a first outer volume and for connecting, in a second state, the passage to a second outer volume.
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公开(公告)号：US11788990B2
公开(公告)日：2023-10-17
申请号：US17647403
申请日：2022-01-07
Applicant: Infineon Technologies AG
Inventor： Johannes Manz , Wolfgang Klein , David Tumpold
CPC classification number: G01N29/2425 , G01N1/22
Abstract: A system for measuring gas concentration includes a package having a cavity and a port, a photoacoustic gas sensor device within the package, and a Micro Electro Mechanical System (“MEMS”) valve separate from the photoacoustic gas sensor device placed over the port of the package and to allow ambient gas diffusion into the cavity in a first mode of operation, and to prevent ambient gas diffusion into the cavity and to acoustically isolate the cavity in a second mode of operation.
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Patent Agency Ranking
公开(公告)号：US20220128515A1
公开(公告)日：2022-04-28
申请号：US17647403
申请日：2022-01-07
Applicant: Infineon Technologies AG
Inventor： Johannes Manz , Wolfgang Klein , David Tumpold
Abstract: A system for measuring gas concentration includes a package having a cavity and a port, a photoacoustic gas sensor device within the package, and a Micro Electro Mechanical System (“MEMS”) valve separate from the photoacoustic gas sensor device placed over the port of the package and to allow ambient gas diffusion into the cavity in a first mode of operation, and to prevent ambient gas diffusion into the cavity and to acoustically isolate the cavity in a second mode of operation.
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27.发明申请公开(公告)号：US20190297441A1
公开(公告)日：2019-09-26
申请号：US16439016
申请日：2019-06-12
Applicant: Infineon Technologies AG
Inventor： Alfons Dehe , Stefan Barzen , Wolfgang Friza , Wolfgang Klein
Abstract: In one embodiment, a method of manufacturing a semiconductor device includes oxidizing a substrate to form local oxide regions that extend above a top surface of the substrate. A membrane layer is formed over the local oxide regions and the top surface of the substrate. A portion of the substrate under the membrane layer is removed. The local oxide regions under the membrane layer are removed.
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公开(公告)号：US10405118B2
公开(公告)日：2019-09-03
申请号：US14611953
申请日：2015-02-02
Applicant: Infineon Technologies AG
Inventor： Alfons Dehe , Stefan Barzen , Wolfgang Friza , Wolfgang Klein
Abstract: In one embodiment, a method of manufacturing a semiconductor device includes oxidizing a substrate to form local oxide regions that extend above a top surface of the substrate. A membrane layer is formed over the local oxide regions and the top surface of the substrate. A portion of the substrate under the membrane layer is removed. The local oxide regions under the membrane layer is removed.
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公开(公告)号：US09736590B2
公开(公告)日：2017-08-15
申请号：US14298529
申请日：2014-06-06
Applicant: Infineon Technologies AG
Inventor： Wolfgang Klein , Reinhard Gabl
CPC classification number: H04R7/02 , H04R19/005 , H04R23/00 , H04R2201/003
Abstract: According to an embodiment, a microfabricated structure includes a cavity disposed in a substrate, a first clamping layer overlying the substrate, a deflectable membrane overlying the first clamping layer, and a second clamping layer overlying the deflectable membrane. A portion of the second clamping layer overlaps the cavity.
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公开(公告)号：US20150358735A1
公开(公告)日：2015-12-10
申请号：US14298529
申请日：2014-06-06
Applicant: Infineon Technologies AG
Inventor： Wolfgang Klein , Reinhard Gabl
CPC classification number: H04R7/02 , H04R19/005 , H04R23/00 , H04R2201/003
Abstract: According to an embodiment, a microfabricated structure includes a cavity disposed in a substrate, a first clamping layer overlying the substrate, a deflectable membrane overlying the first clamping layer, and a second clamping layer overlying the deflectable membrane. A portion of the second clamping layer overlaps the cavity.
Abstract translation: 根据一个实施例，微加工结构包括设置在基板中的空腔，覆盖基板的第一夹紧层，覆盖第一夹持层的可偏转膜以及覆盖在可偏转膜上的第二夹紧层。 第二夹紧层的一部分与空腔重叠。
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