公开(公告)号：US20200373157A1

公开(公告)日：2020-11-26

申请号：US16419426

申请日：2019-05-22

Applicant: Intel Corporation

Inventor： Jeremy D. ECTON ,  Brandon C. MARIN ,  Andrew J. BROWN ,  Dilan SENEVIRATNE

IPC: H01L21/02 ,  H01L49/02 ,  H01L23/532 ,  H01L21/768

Abstract: A thin-film insulator comprises a first electrode over a substrate. A photo up-converting material is over the first electrode. A cured photo-imageable dielectric (PID) containing a high-k filler material is over the photo up-converting material, wherein the cured PID is less than 4 μm in thickness, and a second electrode is over the cured PID.

公开(公告)号：US20160374210A1

公开(公告)日：2016-12-22

申请号：US14905022

申请日：2015-02-16

Applicant: Intel Corporation

Inventor： Brandon C. MARIN ,  Trina GHOSH DASTIDAR ,  Yonggang Yong LI ,  Dilan SENEVIRATNE

IPC: H05K3/18 ,  H01L21/288 ,  H05K1/03 ,  H01L23/528 ,  H01L23/532 ,  H05K1/09 ,  H01L21/768 ,  H05K3/00

CPC classification number: H05K3/187 ,  H01L21/288 ,  H01L21/4857 ,  H01L21/76802 ,  H01L21/76829 ,  H01L21/76874 ,  H01L21/76877 ,  H01L23/49894 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/5329 ,  H05K1/036 ,  H05K1/09 ,  H05K3/0032 ,  H05K3/105 ,  H05K3/182 ,  H05K2201/09036

Abstract: A build-up layer may be fabricated by forming a microelectronic dielectric layer comprising a dielectric material with a metallization catalyst dispersed therein, forming a primer layer on the microelectronic dielectric layer, and forming a recess through the primer layer and into the dielectric material layer. An activation layer may be formed in or on the exposed microelectronic dielectric layer within the recess, wherein the primer layer acts as a mask. A metal layer may be formed on the activation layer, such as with an electroless process. Thus, the resolution of the metal layer deposition may be precisely controlled by the process used to form the recess.

Abstract translation: 可以通过形成包含分散在其中的金属化催化剂的电介质材料的微电子介电层来形成堆积层，在微电子介电层上形成底漆层，以及通过底涂层形成凹陷并进入电介质材料层。 活化层可以形成在凹陷内的暴露的微电子介电层中或其上，其中底漆层用作掩模。 可以在活化层上形成金属层，例如用无电解方法。 因此，可以通过用于形成凹部的工艺来精确地控制金属层沉积的分辨率。