摘要:
An image reading device includes a plurality of photoelectric converting elements, a plurality of accumulating elements corresponding to each of the photoelectric converting elements, and switching circuitry for reading out the signals accumulated in the accumulating elements. Each of the photoelectric converting elements comprises a switching portion and a sensor portion. Driving circuitry is provided for driving the photoelectric converting elements by activating the switching portions to release the charges accumulated in the accumulating elements through the photoelectric converting elements in order to reset the accumulated elements.
摘要:
A photosensor with improved correction of image signals has a first photosensor portion including a plurality of photoelectric converting devices for reading an object and providing image signals thereof. A second photosensor portion includes a plurality of photoelectric converting devices and provides reference signals from light reflected from a reference number, or light received directly from a light source. Correction circuitry corrects the image signals from the first photosensor portion in accordance with the reference signals output from the second photosensor portion. Preferably, the photoelectric converting devices of the first and second photosensor portions are arranged in adjacent, parallel lines on the same substrate. Preferably, reference signals from the converting devices of the second photosensor are used by the correction circuitry to correct the electrical signals from substantially adjacent converting devices of the first photosensor portion. A single converting device of the second photosensor portion may be used to correct either one or more of the converting devices of the first photosensor portion.
摘要:
A photoelectric conversion device comprises a plurality of blocks each having a plurality of sensor elements each consisting of a combination of a photoelectric conversion section, a charge storage section connected to the photoelectric conversion section, and a switch section arranged in a path for reading a charge from said charge storage section. Gate lines for operating a plurality of switch sections in a given block are commonly connected. Read lines from said switch sections are commonly connected in units of sensor elements corresponding to each block to constitute a wiring matrix. The gate lines are arranged between the adjacent common read lines of the wiring matrix.
摘要:
A semiconductor device wherein m.times.n switch means connected to m.times.n functional elements for transferring signals by switching, and a matrix wiring section having wiring connected respectively to said m.times.n switching means are formed on a common substrate, and wherein said matrix wiring section comprises a lamination structure formed by stacking, at least, a first conductive layer, a first insulating layer, a second conductive layer, a second insulating layer, a semiconductor layer, and a third conductive layer in this order.
摘要:
A photoelectric conversion device having a matrix of N.times.M photoelectric conversion element is arranged in a one-dimensional array on a substrate and connected to common lines of a number M in a matrix wiring. A transparent protective layer is provided on the photoelectric conversion elements and common lines of the matrix wiring, comprising wirings maintained at a constant potential at least at both sides of one of the array of the common lines of the matrix wiring.
摘要:
A photoelectric conversion apparatus includes a photoelectric conversion section for receiving light reflected from an original, and an electric charge storage section having an electrode electrically connected to an electrode of the photoelectric conversion unit. The electric charge storage section comprises a lamination structure including a dielectric layer and two electrodes respectively provided at upper and lower sides of the dielectric layer. The electrode closest to the original is maintained at a constant potential.
摘要:
An image sensor includes a substrate on which a light-receiving element and a thin-film transistor for transferring an output from the light-receiving element are formed, and a silicon integrated circuit chip for driving the thin-film transistor and processing signals. All externally connected input/output signal lines are extracted through or electrical connections to the silicon integrated circuit chip.
摘要:
An image sensor includes a substrate on which are formed a light-receiving element and a thin-film transistor for transferring an output from the light-receiving element, and a silicon integrated circuit chip for driving the thin-film transistor and processing signals. All externally connected input/output signal lines are extracted through or electrically connected to the silicon integrated circuit chip.
摘要:
A photoelectric conversion apparatus includes a plurality of one-dimensionally arranged photoelectric conversion elements, a plurality of common electrodes each for commonly connecting at least two of output individual electrodes of the plurality of photoelectric conversion elements, and separating electrodes respectively formed between the plurality of common electrodes so as to maintain potentials at a predetermined level. The number of intersections between the individual and separating electrodes are identical in the individual electrodes.
摘要:
A method of reading signals from a plurality of charge-storage devices in a charge-storage line sensor circuit so as to cause a switching device respectively corresponding to the plurality of charge-storage devices to sequentially read the stored signals and to sequentially reset the storage devices during a line read period. Dead time intervals are provided in the line read period between successive device read periods. A resetting operation for each storage device is performed in a dead time interval after the read operation for that storage device is completed.