Flexible flat panel display
    23.
    发明授权
    Flexible flat panel display 有权
    柔性平板显示屏

    公开(公告)号:US07593086B2

    公开(公告)日:2009-09-22

    申请号:US11523607

    申请日:2006-09-20

    IPC分类号: G02F1/1345

    CPC分类号: H01L27/3276 H01L2251/5338

    摘要: A flexible flat panel display prevents electronic units, such as a flexible printed circuit board and a driving IC, from being separated from the flexible flat panel display even when the display unit is bent. The flexible flat panel display includes: a flexible display unit including a display area adapted to display an image, a first side and a second side parallel to edges of the display area, and a third side and a fourth side perpendicular to the first and second sides, the third side and the fourth being adapted to being bent; and electronic units arranged solely on at least one of the first and second sides and absent the third and fourth sides.

    摘要翻译: 即使显示单元弯曲,柔性平板显示器也可防止电子单元,例如柔性印刷电路板和驱动IC与柔性平板显示器分离。 柔性平板显示器包括:柔性显示单元,包括适于显示图像的显示区域,平行于显示区域边缘的第一侧面和第二侧面,以及垂直于第一和第二侧面的第三侧面和第四侧面 侧面,第三面和第四面适于弯曲; 以及仅在第一和第二侧中的至少一个上排列并且不存在第三和第四侧的电子单元。

    Flat panel display and its method of fabrication
    25.
    发明申请
    Flat panel display and its method of fabrication 审中-公开
    平板显示器及其制造方法

    公开(公告)号:US20060102900A1

    公开(公告)日:2006-05-18

    申请号:US11274190

    申请日:2005-11-16

    IPC分类号: H01L29/04

    摘要: A flat panel display device which can prevent line defects and voltage drops using a conductive substrate formed of metal foil as a power supply layer includes: a conductive substrate; a first insulating layer formed on one side of the substrate and having a contact hole exposing a part of the conductive substrate; a Thin Film Transistor (TFT) having a semiconductor layer formed on the first insulating layer, a gate electrode, and source and drain electrodes; and a display element having a pixel electrode connected to one of the source and drain electrodes of the TFT. The other of the source and drain electrodes of the TFT is electrically connected to the conductive substrate via the contact hole.

    摘要翻译: 可以使用由金属箔形成的导电性基板作为电源层来防止线路缺陷和电压降的平板显示装置包括:导电性基板; 第一绝缘层,形成在所述基板的一侧上,并具有暴露所述导电基板的一部分的接触孔; 具有形成在第一绝缘层上的半导体层的薄膜晶体管(TFT),栅极电极和源极和漏极电极; 以及具有连接到TFT的源极和漏极之一的像素电极的显示元件。 TFT的源极和漏极中的另一个通过接触孔电连接到导电衬底。

    Organic thin film transistor, method of manufacturing the same, and flat display apparatus comprising the same
    26.
    发明授权
    Organic thin film transistor, method of manufacturing the same, and flat display apparatus comprising the same 失效
    有机薄膜晶体管及其制造方法以及包括该薄膜晶体管的平面显示装置

    公开(公告)号:US07728511B2

    公开(公告)日:2010-06-01

    申请号:US11603362

    申请日:2006-11-21

    IPC分类号: H01J63/04

    摘要: An organic thin film transistor (TFT), a method of manufacturing the organic TFT, and a flat display apparatus having the organic TFT are provided. The organic TFT has a gate insulating layer with openings filled with a conductive material, thereby preventing short circuits from occurring between channels connecting the source and drain lines to the organic semiconductor layer. The organic TFT includes a substrate including a source line, a drain line, and a gate electrode. The organic TFT further includes a gate insulating layer formed on the source and drain lines and on the gate electrode. The gate insulating layer has openings exposing the source and drain lines, which openings are filled with a conductive material. The organic TFT also includes an organic semiconductor layer electrically connected to the conductive material.

    摘要翻译: 提供有机薄膜晶体管(TFT),制造有机TFT的方法以及具有有机TFT的平面显示装置。 有机TFT具有栅极绝缘层,其开口填充有导电材料,从而防止在将源极和漏极线连接到有机半导体层的沟道之间发生短路。 有机TFT包括包括源极线,漏极线和栅电极的衬底。 有机TFT还包括形成在源极线和漏极线上以及栅极电极上的栅极绝缘层。 栅极绝缘层具有露出源极和漏极线的开口,该开口填充有导电材料。 有机TFT还包括与导电材料电连接的有机半导体层。

    Organic thin film transistor, method of fabricating the same, and flat panel display having the organic thin film transistor

    公开(公告)号:US20060267094A1

    公开(公告)日:2006-11-30

    申请号:US11436531

    申请日:2006-05-19

    IPC分类号: H01L27/12

    摘要: An organic thin film transistor that prevents the surface of an organic semiconductor layer from being damaged and reduces turn-off current, a method of fabricating the same, and an organic light-emitting device incorporating the organic thin film transistor. The organic thin film transistor includes a substrate, source and drain electrodes arranged on the substrate, a semiconductor layer contacting the source and drain electrodes and comprising a channel region, a protective film arranged on the semiconductor layer and having a same pattern as the semiconductor layer, the protective film comprising a laser-absorbing material, a gate insulating film arranged between the gate and the source and drain electrodes, a gate electrode arranged on the gate insulating film and a separation pattern arranged within the semiconductor layer and within the protective film, the separation pattern adapted to define the channel region of the semiconductor layer.

    Method of fabricating an organic thin film transistor
    28.
    发明授权
    Method of fabricating an organic thin film transistor 有权
    制造有机薄膜晶体管的方法

    公开(公告)号:US07919396B2

    公开(公告)日:2011-04-05

    申请号:US12318915

    申请日:2009-01-12

    IPC分类号: H01L21/20 H01L21/36

    摘要: An organic thin film transistor that prevents the surface of an organic semiconductor layer from being damaged and reduces turn-off current, a method of fabricating the same, and an organic light-emitting device incorporating the organic thin film transistor. The organic thin film transistor includes a substrate, source and drain electrodes arranged on the substrate, a semiconductor layer contacting the source and drain electrodes and comprising a channel region, a protective film arranged on the semiconductor layer and having a same pattern as the semiconductor layer, the protective film comprising a laser-absorbing material, a gate insulating film arranged between the gate and the source and drain electrodes, a gate electrode arranged on the gate insulating film and a separation pattern arranged within the semiconductor layer and within the protective film, the separation pattern adapted to define the channel region of the semiconductor layer.

    摘要翻译: 一种防止有机半导体层的表面被损坏并降低截止电流的有机薄膜晶体管,其制造方法和结合有机薄膜晶体管的有机发光器件。 有机薄膜晶体管包括基板,设置在基板上的源极和漏极,与源极和漏极接触的半导体层,并且包括沟道区,配置在半导体层上并具有与半导体层相同的图案的保护膜 所述保护膜包括激光吸收材料,设置在所述栅极与所述源极和漏极之间的栅极绝缘膜,设置在所述栅极绝缘膜上的栅极电极和布置在所述半导体层内部和所述保护膜内的分离图案, 所述分离图案适于限定半导体层的沟道区。

    Organic thin film transistor, method of manufacturing the same, and flat display apparatus comprising the same
    29.
    发明申请
    Organic thin film transistor, method of manufacturing the same, and flat display apparatus comprising the same 失效
    有机薄膜晶体管及其制造方法以及包括该薄膜晶体管的平面显示装置

    公开(公告)号:US20070114920A1

    公开(公告)日:2007-05-24

    申请号:US11603362

    申请日:2006-11-21

    IPC分类号: H01L51/00

    摘要: An organic thin film transistor (TFT), a method of manufacturing the organic TFT, and a flat display apparatus having the organic TFT are provided. The organic TFT has a gate insulating layer with openings filled with a conductive material, thereby preventing short circuits from occurring between channels connecting the source and drain lines to the organic semiconductor layer. The organic TFT includes a substrate including a source line, a drain line, and a gate electrode. The organic TFT further includes a gate insulating layer formed on the source and drain lines and on the gate electrode. The gate insulating layer has openings exposing the source and drain lines, which openings are filled with a conductive material. The organic TFT also includes an organic semiconductor layer electrically connected to the conductive material.

    摘要翻译: 提供有机薄膜晶体管(TFT),制造有机TFT的方法以及具有有机TFT的平面显示装置。 有机TFT具有栅极绝缘层,其开口填充有导电材料,从而防止在将源极和漏极线连接到有机半导体层的沟道之间发生短路。 有机TFT包括包括源极线,漏极线和栅电极的衬底。 有机TFT还包括形成在源极线和漏极线上以及栅极电极上的栅极绝缘层。 栅极绝缘层具有露出源极和漏极线的开口,该开口填充有导电材料。 有机TFT还包括与导电材料电连接的有机半导体层。

    Organic thin film transistor (OTFT), its method of fabrication, and flat panel display including OTFT
    30.
    发明申请
    Organic thin film transistor (OTFT), its method of fabrication, and flat panel display including OTFT 审中-公开
    有机薄膜晶体管(OTFT),其制造方法,以及包括OTFT的平板显示器

    公开(公告)号:US20060267003A1

    公开(公告)日:2006-11-30

    申请号:US11417046

    申请日:2006-05-04

    IPC分类号: H01L29/08

    摘要: An Organic Thin Film Transistor (OTFT) having improved characteristics due to surface-treating of a portion of a substrate corresponding to a channel region using a fluoride-based gas to stabilize the channel region, a method of fabricating such an OTFT, and an organic Electroluminescent (EL) display including such an OTFT includes: treating a predetermined portion of a surface of a substrate; forming a source electrode and a drain electrode on portions of the substrate which have not been surface-treated; forming a semiconductor layer to contact the surface-treated portion of the substrate; forming a gate insulating layer on the substrate; and forming a gate on the gate insulating layer. The substrate is plasma surface-treated using a fluoride-based gas such as CF4 or C3F8.

    摘要翻译: 一种有机薄膜晶体管(OTFT),其特征在于使用基于氟化物的气体来对应于沟道区域的基板的一部分进行表面处理,以稳定沟道区域,制造这种OTFT的方法以及有机薄膜晶体管 包括这种OTFT的电致发光(EL)显示器包括:处理基板的表面的预定部分; 在所述基板的未被表面处理的部分上形成源电极和漏电极; 形成半导体层以接触所述基板的表面处理部分; 在所述基板上形成栅极绝缘层; 以及在栅极绝缘层上形成栅极。 基材是使用氟化物基气体如CF 4或C 3 F 8 N进行等离子体表面处理。