公开(公告)号：US20060108653A1

公开(公告)日：2006-05-25

申请号：US11271867

申请日：2005-11-14

申请人： Jae-Bon Koo ,  Hyun-Soo Shin ,  Min-Chul Suh ,  Yeon-Gon Mo

发明人： Jae-Bon Koo ,  Hyun-Soo Shin ,  Min-Chul Suh ,  Yeon-Gon Mo

IPC分类号： H01L29/84 ,  H01L27/12

CPC分类号： H01L21/02532 ,  C23C16/0272 ,  H01L21/02425 ,  H01L21/02488 ,  H01L29/78603

摘要： A substrate prevented from being deformed due to thermal stress or deposition stress includes a deformation preventing layer arranged on one surface of the substrate. The substrate can include a thin film transistor arranged on one surface of the substrate and the deformation preventing layer, arranged on the another surface of the substrate, and including at least one layer.

摘要翻译： 防止由于热应力或沉积应力而变形的基板包括布置在基板的一个表面上的变形防止层。 衬底可以包括布置在衬底的一个表面上的薄膜晶体管和设置在衬底的另一个表面上并且包括至少一个层的变形防止层。

公开(公告)号：US07728511B2

公开(公告)日：2010-06-01

申请号：US11603362

申请日：2006-11-21

申请人： Hyun-Soo Shin ,  Min-Chul Suh ,  Yeon-Gon Mo

发明人： Hyun-Soo Shin ,  Min-Chul Suh ,  Yeon-Gon Mo

IPC分类号： H01J63/04

CPC分类号： H01L51/0021 ,  H01L21/76895 ,  H01L27/283 ,  H01L27/3244 ,  H01L51/052 ,  H01L51/0545 ,  H01L51/105

摘要： An organic thin film transistor (TFT), a method of manufacturing the organic TFT, and a flat display apparatus having the organic TFT are provided. The organic TFT has a gate insulating layer with openings filled with a conductive material, thereby preventing short circuits from occurring between channels connecting the source and drain lines to the organic semiconductor layer. The organic TFT includes a substrate including a source line, a drain line, and a gate electrode. The organic TFT further includes a gate insulating layer formed on the source and drain lines and on the gate electrode. The gate insulating layer has openings exposing the source and drain lines, which openings are filled with a conductive material. The organic TFT also includes an organic semiconductor layer electrically connected to the conductive material.

摘要翻译： 提供有机薄膜晶体管（TFT），制造有机TFT的方法以及具有有机TFT的平面显示装置。 有机TFT具有栅极绝缘层，其开口填充有导电材料，从而防止在将源极和漏极线连接到有机半导体层的沟道之间发生短路。 有机TFT包括包括源极线，漏极线和栅电极的衬底。 有机TFT还包括形成在源极线和漏极线上以及栅极电极上的栅极绝缘层。 栅极绝缘层具有露出源极和漏极线的开口，该开口填充有导电材料。 有机TFT还包括与导电材料电连接的有机半导体层。

公开(公告)号：US07816666B2

公开(公告)日：2010-10-19

申请号：US11271867

申请日：2005-11-14

申请人： Jae-Bon Koo ,  Hyun-Soo Shin ,  Min-Chul Suh ,  Yeon-Gon Mo

发明人： Jae-Bon Koo ,  Hyun-Soo Shin ,  Min-Chul Suh ,  Yeon-Gon Mo

IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00

CPC分类号： H01L21/02532 ,  C23C16/0272 ,  H01L21/02425 ,  H01L21/02488 ,  H01L29/78603

摘要： A substrate prevented from being deformed due to thermal stress or deposition stress includes a deformation preventing layer arranged on one surface of the substrate. The substrate can include a thin film transistor arranged on one surface of the substrate and the deformation preventing layer, arranged on the another surface of the substrate, and including at least one layer.

摘要翻译： 防止由于热应力或沉积应力而变形的基板包括布置在基板的一个表面上的变形防止层。 衬底可以包括布置在衬底的一个表面上的薄膜晶体管和设置在衬底的另一个表面上并且包括至少一个层的变形防止层。

公开(公告)号：US20070114920A1

公开(公告)日：2007-05-24

申请号：US11603362

申请日：2006-11-21

申请人： Hyun-Soo Shin ,  Min-Chul Suh ,  Yeon-Gon Mo

发明人： Hyun-Soo Shin ,  Min-Chul Suh ,  Yeon-Gon Mo

IPC分类号： H01L51/00

CPC分类号： H01L51/0021 ,  H01L21/76895 ,  H01L27/283 ,  H01L27/3244 ,  H01L51/052 ,  H01L51/0545 ,  H01L51/105

摘要： An organic thin film transistor (TFT), a method of manufacturing the organic TFT, and a flat display apparatus having the organic TFT are provided. The organic TFT has a gate insulating layer with openings filled with a conductive material, thereby preventing short circuits from occurring between channels connecting the source and drain lines to the organic semiconductor layer. The organic TFT includes a substrate including a source line, a drain line, and a gate electrode. The organic TFT further includes a gate insulating layer formed on the source and drain lines and on the gate electrode. The gate insulating layer has openings exposing the source and drain lines, which openings are filled with a conductive material. The organic TFT also includes an organic semiconductor layer electrically connected to the conductive material.

摘要翻译： 提供有机薄膜晶体管（TFT），制造有机TFT的方法以及具有有机TFT的平面显示装置。 有机TFT具有栅极绝缘层，其开口填充有导电材料，从而防止在将源极和漏极线连接到有机半导体层的沟道之间发生短路。 有机TFT包括包括源极线，漏极线和栅电极的衬底。 有机TFT还包括形成在源极线和漏极线上以及栅极电极上的栅极绝缘层。 栅极绝缘层具有露出源极和漏极线的开口，该开口填充有导电材料。 有机TFT还包括与导电材料电连接的有机半导体层。

公开(公告)号：US07538480B2

公开(公告)日：2009-05-26

申请号：US11196241

申请日：2005-08-04

申请人： Jae-Bon Koo ,  Min-Chul Suh ,  Kyong-Do Kim ,  Yeon-Gon Mo

发明人： Jae-Bon Koo ,  Min-Chul Suh ,  Kyong-Do Kim ,  Yeon-Gon Mo

IPC分类号： H01J19/00 ,  H05B33/00

CPC分类号： H01L51/0516

摘要： Provided are an organic thin film transistor (TFT), which can prevent deformation or separation due to mechanical stress, and a flat panel display device including the organic TFT. The organic TFT includes a gate electrode; a source electrode and drain electrodes insulated from the gate electrode; an organic semiconductor layer insulated from the gate electrode, and contacting the source electrode and the drain electrodes; and a gate insulating layer insulating the gate electrode from the source electrode, the drain electrode, and the organic semiconductor layer. The gate insulating layer may be patterned in an island shape to permit adjacent portions of the substrate to flex freely, thereby reducing stress and deformation of the organic TFT and its component layers.

摘要翻译： 提供一种有机薄膜晶体管（TFT），其可以防止由机械应力引起的变形或分离，以及包括有机TFT的平板显示装置。 有机TFT包括栅电极; 源电极和与电极绝缘的漏电极; 与栅电极绝缘的有机半导体层，并与源电极和漏电极接触; 以及将栅电极与源电极，漏电极和有机半导体层绝缘的栅极绝缘层。 栅极绝缘层可以被图案化为岛状，以允许基板的相邻部分自由地弯曲，从而减少有机TFT及其部件层的应力和变形。

公开(公告)号：US20060027806A1

公开(公告)日：2006-02-09

申请号：US11195859

申请日：2005-08-03

申请人： Jae-Bon Koo ,  Kyong-Do Kim ,  Min-Chul Suh ,  Yeon-Gon Mo

发明人： Jae-Bon Koo ,  Kyong-Do Kim ,  Min-Chul Suh ,  Yeon-Gon Mo

IPC分类号： H01L29/04

CPC分类号： H01L27/12 ,  G02F1/13624

摘要： In a thin film transistor and a flat panel display device having the same, cross-talk is minimized. The flat panel display device includes a substrate, a first thin film transistor, a second thin film transistor, and a display element. The first thin film transistor includes: a first gate electrode formed on the substrate; a first electrode insulated from the first gate electrode; a second electrode insulated from the first gate electrode and surrounding the first electrode in the same plane; and a first semiconductor layer insulated from the first gate electrode and contacting the first electrode and the second electrode. The second thin film transistor includes: a second gate electrode formed on the substrate and electrically connected to one of the first electrode and the second electrode; a third electrode insulated from the second gate electrode; a fourth electrode insulated from the second gate electrode and surrounding the third electrode in the same plane; and a second semiconductor layer insulated from the second gate electrode and contacting the third electrode and the fourth electrode.

摘要翻译： 在薄膜晶体管和具有该薄膜晶体管的平板显示装置中，串扰最小化。 平板显示装置包括基板，第一薄膜晶体管，第二薄膜晶体管和显示元件。 第一薄膜晶体管包括：形成在基板上的第一栅电极; 与所述第一栅电极绝缘的第一电极; 与第一栅电极绝缘并在同一平面内围绕第一电极的第二电极; 以及与第一栅电极绝缘并与第一电极和第二电极接触的第一半导体层。 第二薄膜晶体管包括：形成在基板上并电连接到第一电极和第二电极之一的第二栅电极; 与所述第二栅电极绝缘的第三电极; 与第二栅电极绝缘并在同一平面内围绕第三电极的第四电极; 以及与第二栅电极绝缘并与第三电极和第四电极接触的第二半导体层。

公开(公告)号：US07902602B2

公开(公告)日：2011-03-08

申请号：US11158049

申请日：2005-06-22

申请人： Jae-Bon Koo ,  Min-Chul Suh ,  Yeon-Gon Mo

发明人： Jae-Bon Koo ,  Min-Chul Suh ,  Yeon-Gon Mo

IPC分类号： H01L27/13

CPC分类号： H01L51/0529

摘要： The present invention provides an organic thin film transistor and method for fabricating the same. The organic thin film transistor has a substrate and a gate electrode that is positioned on the substrate. A gate insulator has a stacked structure comprising an inorganic gate insulator and an organic gate insulator that are positioned on the gate electrode. An organic semiconductor layer is positioned on the gate insulator to overlap the gate electrode. Accordingly, an organic thin film transistor that has flexibility, decreased leakage current, and a low threshold is formed.

摘要翻译： 本发明提供一种有机薄膜晶体管及其制造方法。 有机薄膜晶体管具有基板和位于基板上的栅电极。 栅极绝缘体具有堆叠结构，其包括位于栅电极上的无机栅极绝缘体和有机栅极绝缘体。 有机半导体层位于栅极绝缘体上以与栅电极重叠。 因此，形成了具有柔性，降低漏电流和低阈值的有机薄膜晶体管。

公开(公告)号：US07692245B2

公开(公告)日：2010-04-06

申请号：US11195859

申请日：2005-08-03

申请人： Jae-Bon Koo ,  Kyong-Do Kim ,  Min-Chul Suh ,  Yeon-Gon Mo

发明人： Jae-Bon Koo ,  Kyong-Do Kim ,  Min-Chul Suh ,  Yeon-Gon Mo

IPC分类号： H01L27/01

CPC分类号： H01L27/12 ,  G02F1/13624

摘要： In a thin film transistor and a flat panel display device having the same, cross-talk is minimized. The flat panel display device includes a substrate, a first thin film transistor, a second thin film transistor, and a display element. The first thin film transistor includes: a first gate electrode formed on the substrate; a first electrode insulated from the first gate electrode; a second electrode insulated from the first gate electrode and surrounding the first electrode in the same plane; and a first semiconductor layer insulated from the first gate electrode and contacting the first electrode and the second electrode. The second thin film transistor includes: a second gate electrode formed on the substrate and electrically connected to one of the first electrode and the second electrode; a third electrode insulated from the second gate electrode; a fourth electrode insulated from the second gate electrode and surrounding the third electrode in the same plane; and a second semiconductor layer insulated from the second gate electrode and contacting the third electrode and the fourth electrode.

摘要翻译： 在薄膜晶体管和具有该薄膜晶体管的平板显示装置中，串扰最小化。 平板显示装置包括基板，第一薄膜晶体管，第二薄膜晶体管和显示元件。 第一薄膜晶体管包括：形成在基板上的第一栅电极; 与所述第一栅电极绝缘的第一电极; 与第一栅电极绝缘并在同一平面内围绕第一电极的第二电极; 以及与第一栅电极绝缘并与第一电极和第二电极接触的第一半导体层。 第二薄膜晶体管包括：形成在基板上并电连接到第一电极和第二电极之一的第二栅电极; 与所述第二栅电极绝缘的第三电极; 与第二栅电极绝缘并在同一平面内围绕第三电极的第四电极; 以及与第二栅电极绝缘并与第三电极和第四电极接触的第二半导体层。

公开(公告)号：US07470931B2

公开(公告)日：2008-12-30

申请号：US11134294

申请日：2005-05-23

申请人： Jae-Bon Koo ,  Min-Chul Suh ,  Yeon-Gon Mo

发明人： Jae-Bon Koo ,  Min-Chul Suh ,  Yeon-Gon Mo

IPC分类号： H01L29/76

CPC分类号： H01L51/0545 ,  G02F1/136227 ,  G02F1/1368 ,  H01L51/0004 ,  H01L51/0037 ,  H01L51/0038 ,  H01L51/0039 ,  H01L51/0062 ,  H01L51/0078 ,  H01L51/0081

摘要： A thin film transistor, and a flat panel display with the same, including a gate electrode, source and drain electrodes, an organic semiconductor layer, and a gate insulating layer. A first capacitance is a capacitance at a first point where the organic semiconductor layer, an electrode, and the gate insulating layer contact one another, a second capacitance is a capacitance at a second point where the organic semiconductor layer contacts the gate insulating layer, a third capacitance is a capacitance at a third point where the electrode contacts the gate insulating layer, and a fourth capacitance is a capacitance at a fourth point where the organic semiconductor layer contacts the electrode. The first capacitance is greater than one of the second capacitance, the third capacitance, and the fourth capacitance.

摘要翻译： 薄膜晶体管及其平板显示器，包括栅极，源极和漏极，有机半导体层和栅极绝缘层。 第一电容是在有机半导体层，电极和栅极绝缘层彼此接触的第一点处的电容，第二电容是有机半导体层接触栅绝缘层的第二点处的电容， 第三电容是电极接触栅极绝缘层的第三点处的电容，第四电容是有机半导体层接触电极的第四点处的电容。 第一电容大于第二电容，第三电容和第四电容中的一个。

公开(公告)号：US20060267094A1

公开(公告)日：2006-11-30

申请号：US11436531

申请日：2006-05-19

申请人： Taek Ahn ,  Min-Chul Suh ,  Yeon-Gon Mo

发明人： Taek Ahn ,  Min-Chul Suh ,  Yeon-Gon Mo

IPC分类号： H01L27/12

CPC分类号： H01L27/3274 ,  H01L27/283 ,  H01L51/0017 ,  H01L51/0036 ,  H01L51/0541 ,  H01L51/0545

摘要： An organic thin film transistor that prevents the surface of an organic semiconductor layer from being damaged and reduces turn-off current, a method of fabricating the same, and an organic light-emitting device incorporating the organic thin film transistor. The organic thin film transistor includes a substrate, source and drain electrodes arranged on the substrate, a semiconductor layer contacting the source and drain electrodes and comprising a channel region, a protective film arranged on the semiconductor layer and having a same pattern as the semiconductor layer, the protective film comprising a laser-absorbing material, a gate insulating film arranged between the gate and the source and drain electrodes, a gate electrode arranged on the gate insulating film and a separation pattern arranged within the semiconductor layer and within the protective film, the separation pattern adapted to define the channel region of the semiconductor layer.