公开(公告)号：US09613860B2

公开(公告)日：2017-04-04

申请号：US14996323

申请日：2016-01-15

Applicant: Japan Display Inc.

Inventor： Isao Suzumura ,  Arichika Ishida ,  Hidekazu Miyake ,  Hiroto Miyake ,  Yohei Yamaguchi

IPC: H01L21/768 ,  H01L29/66 ,  H01L21/02 ,  H01L29/417 ,  H01L29/45 ,  H01L29/786 ,  H01L29/49 ,  H01L21/78

CPC classification number: H01L21/76895 ,  H01L21/022 ,  H01L21/32136 ,  H01L21/465 ,  H01L21/78 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869

Abstract: According to one embodiment, a method of manufacturing a thin-film transistor includes forming a semiconductor layer on a gate electrode with an insulating layer 12 being interposed, forming interconnect formation layers on the semiconductor layer, forming a plurality of interconnects and electrodes by patterning the interconnect formation layers through etching, patterning the semiconductor layer in an island shape through etching after forming the electrodes, exposing a channel region of the semiconductor layer by etching a part of the electrodes on the semiconductor layer, and forming a protective layer so as to overlap the interconnects, the electrodes and the semiconductor layer having the island shape.

公开(公告)号：US10895792B2

公开(公告)日：2021-01-19

申请号：US16711544

申请日：2019-12-12

Applicant: Japan Display Inc.

Inventor： Yohei Yamaguchi ,  Arichika Ishida ,  Hidekazu Miyake ,  Hiroto Miyake ,  Isao Suzumura

IPC: H01L27/12 ,  H01L29/786 ,  G02F1/1368 ,  G02F1/1362 ,  G02F1/1343 ,  H01L29/423

Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first metal layer on the insulating substrate, a first insulating layer on the insulating substrate and the first metal layer, a semiconductor layer on the first insulating layer, a second insulating layer on the semiconductor layer and the first insulating layer, a second metal layer on the second insulating layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer. The first metal layer overlaps the second metal layer. A third metal layer contacts a top surface of the second metal layer and a top surface of the first metal layer.

公开(公告)号：US10541278B2

公开(公告)日：2020-01-21

申请号：US15660276

申请日：2017-07-26

Applicant: Japan Display Inc.

Inventor： Hidekazu Miyake ,  Kazufumi Watabe ,  Yoshinori Ishii

IPC: H01L27/32 ,  G06F3/041 ,  G06F3/044

Abstract: The organic EL display device includes a TFT substrate on which a scanning line extends in a first direction, a video signal line extends in a second direction, and a pixel having an anode, an organic EL layer, and a cathode is formed on a region enclosed with the scanning line and the video signal line. A first detection electrode extends in the first direction above the pixel via insulation films. A counter substrate is disposed while covering the first detection electrode via an adhesive. A second detection electrode extends in the second direction at the outer side of the counter substrate.

公开(公告)号：US10283644B2

公开(公告)日：2019-05-07

申请号：US15172576

申请日：2016-06-03

Applicant: Japan Display Inc.

Inventor： Isao Suzumura ,  Norihiro Uemura ,  Takeshi Noda ,  Hidekazu Miyake ,  Yohei Yamaguchi

IPC: G02F1/1335 ,  H01L29/786 ,  H01L27/12 ,  G02F1/1333 ,  G02F1/1337 ,  G02F1/1343 ,  G02F1/1368 ,  H01L29/24

Abstract: A thin film transistor includes a first oxide semiconductor, a source electrode, a drain electrode, a gate insulating film and a gate electrode. A second oxide semiconductor layer is between the first oxide semiconductor layer and the source electrode. A third oxide semiconductor layer is between the first oxide semiconductor layer and the drain electrode. The content ratio of oxygen/Indium in each of the second semiconductor layer and the third oxide semiconductor layer is equal to or larger than that of the first semiconductor layer. A thickness of each of the second semiconductor layer and the third oxide semiconductor layer is bigger than that of the first semiconductor layer.

公开(公告)号：US20180040671A1

公开(公告)日：2018-02-08

申请号：US15660276

申请日：2017-07-26

Applicant: Japan Display Inc.

Inventor： Hidekazu Miyake ,  Kazufumi Watabe ,  Yoshinori Ishii

IPC: H01L27/32 ,  G06F3/041

CPC classification number: H01L27/323 ,  G06F3/0412 ,  G06F3/044 ,  H01L27/3276

Abstract: The organic EL display device includes a TFT substrate on which a scanning line extends in a first direction, a video signal line extends in a second direction, and a pixel having an anode, an organic EL layer, and a cathode is formed on a region enclosed with the scanning line and the video signal line. A first detection electrode extends in the first direction above the pixel via insulation films. A counter substrate is disposed while covering the first detection electrode via an adhesive. A second detection electrode extends in the second direction at the outer side of the counter substrate.

公开(公告)号：US09859309B2

公开(公告)日：2018-01-02

申请号：US15241443

申请日：2016-08-19

Applicant: Japan Display Inc.

Inventor： Takenori Hirota ,  Hidekazu Miyake ,  Toshinari Sasaki ,  Shinichiro Oka

IPC: H01L27/12 ,  G02F1/1368 ,  G02F1/1362 ,  H01L29/786

CPC classification number: H01L27/1262 ,  G02F1/133305 ,  G02F1/133345 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2201/54 ,  G02F2202/02 ,  H01L27/1218 ,  H01L27/1225 ,  H01L29/7869

Abstract: A display device in an embodiment according to the present invention includes a first substrate, a second substrate opposing the first substrate, and a transistor provided in the first substrate, a scanning signal line, a video signal line, and a pixel electrode that are electrically connected to the transistor, and a first insulating layer. The thickness of the first substrate is 0.3 mm or less, the first insulating layer contacts the first substrate, and is provided between the first substrate and the transistor, and the first insulating layer includes an organic insulating layer.

公开(公告)号：US09812578B2

公开(公告)日：2017-11-07

申请号：US14920647

申请日：2015-10-22

Applicant: Japan Display Inc.

Inventor： Norihiro Uemura ,  Takeshi Noda ,  Hidekazu Miyake ,  Isao Suzumura

IPC: H01L29/786 ,  G02F1/1368 ,  G02F1/1335 ,  H01L27/12

CPC classification number: H01L29/78606 ,  G02F1/133602 ,  G02F1/1368 ,  H01L27/1225 ,  H01L29/7869

Abstract: A thin film transistor includes, an insulating substrate, a gate electrode provided on an upper surface of the insulating substrate, a gate insulating film formed so as to cover the gate electrode, an oxide semiconductor layer provided on the gate insulating film, a channel protective layer provided at least on an upper surface of the oxide semiconductor layer, and a source electrode and a drain electrode provided so as to come into contact with the oxide semiconductor layer, wherein the channel protective layer is formed such that the film density of a portion provided so as to come into contact with the oxide semiconductor layer is higher than the film density of a portion distant from the oxide semiconductor layer.

公开(公告)号：US09772536B2

公开(公告)日：2017-09-26

申请号：US15444379

申请日：2017-02-28

Applicant: Japan Display Inc.

Inventor： Yohei Yamaguchi ,  Arichika Ishida ,  Hidekazu Miyake ,  Hiroto Miyake ,  Isao Suzumura

IPC: G02F1/1362 ,  H01L29/786 ,  H01L27/12 ,  G02F1/1368 ,  G02F1/1343 ,  H01L29/423

CPC classification number: G02F1/1368 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136209 ,  G02F1/136227 ,  G02F2001/136218 ,  G02F2001/13685 ,  G02F2202/10 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/78633 ,  H01L29/7869

Abstract: According to one embodiment, a display device includes an insulating substrate, a thin-film transistor including a semiconductor layer formed on a layer above the insulating substrate, a gate electrode which at least partly overlaps the semiconductor layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer, and a light shielding layer formed between the thin-film transistor and the insulating substrate to at least partly overlap the semiconductor layer, the light shielding layer electrically connected to the gate electrode.

公开(公告)号：US20170168334A1

公开(公告)日：2017-06-15

申请号：US15444379

申请日：2017-02-28

Applicant: Japan Display Inc.

Inventor： Yohei Yamaguchi ,  Arichika Ishida ,  Hidekazu Miyake ,  Hiroto Miyake ,  Isao Suzumura

IPC: G02F1/1368 ,  G02F1/1362 ,  G02F1/1343

CPC classification number: G02F1/1368 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136209 ,  G02F1/136227 ,  G02F2001/136218 ,  G02F2001/13685 ,  G02F2202/10 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/78633 ,  H01L29/7869

Abstract: According to one embodiment, a display device includes an insulating substrate, a thin-film transistor including a semiconductor layer formed on a layer above the insulating substrate, a gate electrode which at least partly overlaps the semiconductor layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer, and a light shielding layer formed between the thin-film transistor and the insulating substrate to at least partly overlap the semiconductor layer, the light shielding layer electrically connected to the gate electrode.

公开(公告)号：US09530896B2

公开(公告)日：2016-12-27

申请号：US14658430

申请日：2015-03-16

Applicant: Japan Display Inc.

Inventor： Norihiro Uemura ,  Isao Suzumura ,  Hidekazu Miyake ,  Yohei Yamaguchi

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/417

CPC classification number: H01L27/1225 ,  G02F1/133345 ,  G02F1/134309 ,  G02F1/136209 ,  G02F1/1368 ,  G02F2001/133302 ,  G02F2001/134372 ,  H01L27/124 ,  H01L27/3272 ,  H01L27/3276 ,  H01L29/41733 ,  H01L29/7869

Abstract: Provided are a reliable high performance thin film transistor and a reliable high performance display device. The display device has: a gate electrode which is formed on a substrate; a gate insulating film which is formed to cover the substrate and the gate electrode; an oxide semiconductor layer which is formed on the gate electrode through the gate insulating film; a channel protective layer which is in contact with the oxide semiconductor layer and formed on the oxide semiconductor layer; and source/drain electrodes which are electrically connected to the oxide semiconductor layer and formed to cover the oxide semiconductor layer. A metal oxide layer is formed on an upper part of the channel protective layer. The source/drain electrodes are formed to be divided apart on the channel protective layer and the metal oxide layer.

Abstract translation: 提供可靠的高性能薄膜晶体管和可靠的高性能显示器件。 显示装置具有形成在基板上的栅电极; 形成为覆盖基板和栅电极的栅极绝缘膜; 通过栅极绝缘膜形成在栅电极上的氧化物半导体层; 沟道保护层，其与所述氧化物半导体层接触并形成在所述氧化物半导体层上; 以及与氧化物半导体层电连接并形成为覆盖氧化物半导体层的源极/漏极。 金属氧化物层形成在沟道保护层的上部。 源极/漏极形成为在沟道保护层和金属氧化物层上分开。