公开(公告)号：US20100086310A1

公开(公告)日：2010-04-08

申请号：US12552275

申请日：2009-09-01

Applicant: Jong-jin Lee ,  Hyung-seo Kang ,  Jai-sang Koh

Inventor： Jong-jin Lee ,  Hyung-seo Kang ,  Jai-sang Koh

IPC: H04B10/00

CPC classification number: H04B10/40 ,  H01L2224/48091 ,  H01L2224/49109 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A bidirectional optical transceiver is disclosed. In the bidirectional optical transceiver, by implementing, as a stacked structure, an optical bench in which an optical system and an optical-transmitting module are installed and a multi-layer substrate with good thermal, electrical and high-resistance characteristics in which an optical-receiving module and a driving circuit for driving the optical-transmitting module are installed, thermal, electrical or optical crosstalk is prevented, high-speed transmission of transmission signals is possible through high-speed modulation thereof, and miniaturization is achieved.

Abstract translation: 公开了一种双向光收发器。 在双向光收发器中，通过实现其中安装有光学系统和光传输模块的光学平台作为堆叠结构，并且具有良好的热，电和高电阻特性的多层基板，其中光学 接收模块和用于驱动光发射模块的驱动电路，防止了热，电或光串扰，通过其高速调制可以实现传输信号的高速传输，并且实现了小型化。

公开(公告)号：US07672200B2

公开(公告)日：2010-03-02

申请号：US10939331

申请日：2004-09-14

Applicant: Jong-jin Lee

Inventor： Jong-jin Lee

IPC: G11B7/00

CPC classification number: G11B7/08511 ,  G11B20/10 ,  G11B2007/0013 ,  G11B2020/10916 ,  G11B2020/1288 ,  G11B2220/237 ,  G11B2220/2537

Abstract: A method of inter-layer search of a multi-layer disk, the method including determining whether a search is required of a layer other than a currently accessed layer; searching the currently accessed layer for a position corresponding to a target address on the layer not currently accessed; and moving access to the layer not currently accessed according to the position corresponding to the target address.

Abstract translation: 一种多层盘的层间搜索的方法，所述方法包括确定是否需要搜索不同于当前访问层的层; 搜索当前访问的层与当前未被访问的层上的目标地址相对应的位置; 以及根据与目标地址相对应的位置移动对当前未被访问的层的访问。

公开(公告)号：US07560344B2

公开(公告)日：2009-07-14

申请号：US11976004

申请日：2007-10-19

Applicant: Suk-pil Kim ,  Yoon-dong Park ,  Jong-jin Lee ,  Won-joo Kim ,  June-mo Koo ,  Seung-hwan Song

Inventor： Suk-pil Kim ,  Yoon-dong Park ,  Jong-jin Lee ,  Won-joo Kim ,  June-mo Koo ,  Seung-hwan Song

IPC: H01L21/336

CPC classification number: H01L21/28273 ,  H01L21/28282 ,  H01L29/66795 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/785 ,  H01L29/7881 ,  H01L29/792

Abstract: Example embodiments relate to a semiconductor device and a method of manufacturing the same. A semiconductor device according to example embodiments may have reduced disturbances during reading operations and a reduced short channel effect. The semiconductor device may include a semiconductor substrate having a body and a pair of fins protruding from the body. Inner spacer insulating layers may be formed on an upper portion of an inner sidewall of the pair of fins so as to reduce the entrance to the region between the pair of fins. A gate electrode may cover a portion of the external sidewalls of the pair of fins and may extend across the inner spacer insulating layers so as to define a void between the pair of fins. Gate insulating layers may be interposed between the gate electrode and the pair of fins.

公开(公告)号：US20070200056A1

公开(公告)日：2007-08-30

申请号：US11627744

申请日：2007-01-26

Applicant: Bum-suk Kim ,  Getman Alexander ,  Yun-ho Jang ,  Sae-young Kim ,  Jong-jin Lee ,  Yo-han Sun ,  Keun-chan Yuk

Inventor： Bum-suk Kim ,  Getman Alexander ,  Yun-ho Jang ,  Sae-young Kim ,  Jong-jin Lee ,  Yo-han Sun ,  Keun-chan Yuk

IPC: H01J3/14

CPC classification number: H01L27/14685 ,  H01L27/14621 ,  H01L27/14627

Abstract: An image sensor coated with an anti-reflection material having a microlens provided on a semiconductor substrate, the microlens corresponding to a light receiving device formed in the semiconductor substrate wherein the image sensor includes a first layer coated on a surface of the microlens, and a second layer coated on the first layer, wherein the second layer has a smaller refractive index than the first layer.

Abstract translation: 涂覆有具有设置在半导体衬底上的微透镜的防反射材料的图像传感器，所述微透镜对应于形成在所述半导体衬底中的光接收装置，其中所述图像传感器包括涂覆在所述微透镜的表面上的第一层，以及 第二层涂覆在第一层上，其中第二层具有比第一层更小的折射率。

公开(公告)号：US5879984A

公开(公告)日：1999-03-09

申请号：US806791

申请日：1997-02-26

Applicant: Yun-seung Shin ,  Jong-jin Lee

Inventor： Yun-seung Shin ,  Jong-jin Lee

IPC: H01L27/04 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108

CPC classification number: H01L27/10852 ,  H01L27/10817

Abstract: A method for fabricating an electrode structure of an integrated circuit device comprises the following steps. Initially, a conductive layer is formed on a substrate. A photoresist layer is formed on the conductive layer, wherein said photoresist layer includes a hole exposing a portion of said conductive layer. A portion of the conductive layer is then etched to a predetermined thickness that is less than a thickness of the conductive layer using said photoresist layer as an etching mask. The hole in the photoresist layer is enlarged by removing a portion of the photoresist layer, thereby exposing a surface portion of the conductive layer outside the etched portion of the conductive layer. An insulating layer is then formed on the surface portion of the conductive layer and the etched portion of the first conductive layer. The insulating layer is used as an etching mask for etching the conductive layer to form an electrode structure.

Abstract translation: 一种用于制造集成电路器件的电极结构的方法包括以下步骤。 首先，在基板上形成导电层。 在导电层上形成光致抗蚀剂层，其中所述光致抗蚀剂层包括暴露所述导电层的一部分的孔。 然后使用所述光致抗蚀剂层作为蚀刻掩模，将导电层的一部分蚀刻到小于导电层的厚度的预定厚度。 通过去除光致抗蚀剂层的一部分来增加光致抗蚀剂层中的孔，从而将导电层的表面部分暴露在导电层的蚀刻部分之外。 然后在导电层的表面部分和第一导电层的蚀刻部分上形成绝缘层。 绝缘层用作用于蚀刻导电层以形成电极结构的蚀刻掩模。