公开(公告)号：US20100144084A1

公开(公告)日：2010-06-10

申请号：US12328796

申请日：2008-12-05

申请人： Hung Q. Doan ,  Joseph R. Summa

发明人： Hung Q. Doan ,  Joseph R. Summa

IPC分类号： H01L31/18

CPC分类号： H01L27/14629 ,  G02B6/12004 ,  G02B6/13 ,  H01L27/14603 ,  H01L27/14605 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/02162 ,  H01L31/022408 ,  H01L31/02327

摘要： Trenches that are filled with a reflecting material are formed in one or more dielectric layers in an image sensor. The trenches form optical waveguide structures that surround either partially or completely each photodetector in the image sensor. Each optical waveguide structure directs light towards a respective photodetector.

摘要翻译： 填充有反射材料的沟槽形成在图像传感器中的一个或多个介电层中。 沟槽形成在图像传感器中部分或完全围绕每个光电检测器的光波导结构。 每个光波导结构将光引向相应的光电检测器。

公开(公告)号：US20080265287A1

公开(公告)日：2008-10-30

申请号：US12168184

申请日：2008-07-07

申请人： Joseph R. Summa ,  Herbert J. Erhardt

发明人： Joseph R. Summa ,  Herbert J. Erhardt

IPC分类号： H01L31/00

CPC分类号： H01L27/14625 ,  H01L27/14837 ,  H04N9/045

摘要： An image sensor includes at least first and second photo-sensitive regions; a color filter array having at least two different colors that selectively absorb specific bands of wavelengths, and the two colors respectively span portions of predetermined photo-sensitive regions; and wherein the two photo sensitive regions are doped so that electrons that are released at two different depths in the substrate are collected in two separate regions of the photo sensitive regions so that, when wavelengths of light pass through the color filter array, light is absorbed by the photo sensitive regions which photo sensitive regions consequently releases electrons at two different depths of the photo sensitive regions and are stored in first and second separate regions; at least two charge-coupled devices adjacent the first photo sensitive regions; and a first transfer gate associated with the first photo sensitive region that selectively passes charge at first and second levels which, when at the first level, causes the charge stored in the first region to be passed to one of its associated charge-coupled devices, and when the transfer gate is at the second level, charge stored in the second region is passed to one of the associated charge-coupled devices.

公开(公告)号：US06870168B1

公开(公告)日：2005-03-22

申请号：US10706200

申请日：2003-11-12

申请人： Robert P. Fabinski ,  Joseph R. Summa

发明人： Robert P. Fabinski ,  Joseph R. Summa

IPC分类号： G03F1/14 ,  G03F7/00 ,  G03F7/20 ,  G03F9/00

CPC分类号： G03F7/70466 ,  B82Y10/00 ,  G03F1/70 ,  G03F7/0005 ,  G03F7/0035 ,  G03F7/203

摘要： A method for creating a pattern on a substrate, the method includes the steps of imprinting a first pattern on the substrate; and imprinting a second substantially similar pattern which is mis-registered with regard to the first pattern so that the combination of the first and second patterns cause a systematic variation in a final size of defined elements across the substrate.

摘要翻译： 一种用于在基板上形成图案的方法，所述方法包括以下步骤：将第一图案压印在所述基板上; 并且记录关于第一图案错误登记的第二基本相似的图案，使得第一和第二图案的组合引起跨基板的限定元件的最终尺寸的系统变化。

公开(公告)号：US20110156195A1

公开(公告)日：2011-06-30

申请号：US12655551

申请日：2009-12-31

申请人： Cristian A. Tivarus ,  John P. McCarten ,  Joseph R. Summa

发明人： Cristian A. Tivarus ,  John P. McCarten ,  Joseph R. Summa

IPC分类号： H01L27/146

CPC分类号： H01L27/14634 ,  H01L27/14603 ,  H01L27/14605 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643

摘要： An image sensor includes a sensor wafer and a circuit wafer electrically connected to the sensor wafer. The sensor wafer includes unit cells with each unit cell having at least one photodetector and a charge-to-voltage conversion region. The circuit wafer includes unit cells with each unit cell having an electrical node that is associated with each unit cell on the sensor wafer. An inter-wafer interconnect is connected between each charge-to-voltage conversion region on the sensor wafer and a respective electrical node on the circuit wafer. A location of a portion of the unit cells on the sensor wafer and a location of a corresponding portion of the unit cells on the circuit wafer are shifted a predetermined distance with respect to the locations of the remaining unit cells on the sensor and circuit wafers.

摘要翻译： 图像传感器包括传感器晶片和电连接到传感器晶片的电路晶片。 传感器晶片包括具有每个单元电池的单元电池，其具有至少一个光电检测器和电荷至电压转换区域。 电路晶片包括单元单元，每个单元具有与传感器晶片上的每个单位单元相关联的电节点。 晶片间互连连接在传感器晶片上的每个电荷 - 电压转换区域和电路晶片上的相应的电节点之间。 传感器晶片上的单位单元的一部分的位置和电路晶片上的单位单元的对应部分的位置相对于传感器和电路晶片上的剩余单位单元的位置移动预定距离。

公开(公告)号：US20100330728A1

公开(公告)日：2010-12-30

申请号：US12459044

申请日：2009-06-26

申请人： John P. McCarten ,  Cristian A. Tivarus ,  Joseph R. Summa

发明人： John P. McCarten ,  Cristian A. Tivarus ,  Joseph R. Summa

IPC分类号： H01L31/0232

CPC分类号： H01L27/14687 ,  H01L27/1464

摘要： A back-illuminated image sensor includes a sensor layer disposed between a circuit layer adjacent to a frontside of the sensor layer and a layer disposed on a backside of the sensor layer. One or more first alignment marks are formed in a layer in the circuit layer. A masking layer is aligned to the one or more first alignment marks. The masking layer includes openings that define locations for one or more second alignment marks. The one or more second alignment marks are then formed in or through the layer disposed on a backside of a sensor layer. One or more elements are formed in or on the backside of the sensor layer. The one or more elements are aligned to one or more second alignment marks.

摘要翻译： 背照式图像传感器包括设置在与传感器层的前侧相邻的电路层与设置在传感器层的背面之间的层之间的传感器层。 一个或多个第一对准标记形成在电路层中的一层中。 掩模层与一个或多个第一对准标记对准。 掩模层包括限定一个或多个第二对准标记的位置的开口。 一个或多个第二对准标记然后形成在或设置在传感器层的背面上的层中。 一个或多个元件形成在传感器层的背面中或其上。 一个或多个元件与一个或多个第二对准标记对准。

公开(公告)号：US20100327391A1

公开(公告)日：2010-12-30

申请号：US12492343

申请日：2009-06-26

申请人： John P. McCarten ,  Cristian A. Tivarus ,  Joseph R. Summa

发明人： John P. McCarten ,  Cristian A. Tivarus ,  Joseph R. Summa

IPC分类号： H01L27/146

CPC分类号： H01L27/14645 ,  H01L27/14609 ,  H01L27/1464

摘要： A back-illuminated image sensor includes a sensor layer of a first conductivity type having a frontside and a backside opposite the frontside. One or more regions of a second conductivity type are formed in at least a portion of the sensor layer adjacent to the frontside. The one or more regions are connected to a voltage terminal for biasing these regions to a predetermined voltage. A backside well of the second conductivity type is formed in the sensor layer adjacent to the backside. The backside well is electrically connected to another voltage terminal for biasing the backside well at a second predetermined voltage that is different from the first predetermined voltage.

摘要翻译： 背照式图像传感器包括第一导电类型的传感器层，其具有前侧和与前侧相对的背面。 第二导电类型的一个或多个区域形成在邻近前侧的传感器层的至少一部分中。 一个或多个区域连接到电压端子，用于将这些区域偏置到预定电压。 第二导电类型的背面孔形成在邻近背面的传感器层中。 背面孔电连接到另一个电压端子，用于以与第一预定电压不同的第二预定电压来偏压背面阱。

公开(公告)号：US20100327390A1

公开(公告)日：2010-12-30

申请号：US12492336

申请日：2009-06-26

申请人： John P. McCarten ,  Cristian A. Tivarus ,  Joseph R. Summa

发明人： John P. McCarten ,  Cristian A. Tivarus ,  Joseph R. Summa

IPC分类号： H01L31/09

CPC分类号： H01L27/1463 ,  H01L27/1464

摘要： Back-illuminated image sensors include one or more contact implant regions disposed adjacent to a backside of a sensor layer. An electrically conductive material, including, but not limited to, a conductive lightshield, is disposed over the backside of the sensor layer. A backside well is formed in the sensor layer adjacent to the backside, and an insulating layer is disposed over the surface of the backside. Contacts formed in the insulating layer electrically connect the electrically conducting material to respective contact implant regions. At least a portion of the contact implant regions are arranged in a shape that corresponds to one or more pixel edges.

摘要翻译： 背照式图像传感器包括邻近传感器层的背面设置的一个或多个接触注入区域。 包括但不限于导电遮光罩的导电材料设置在传感器层的背面之上。 在与背面相邻的传感器层中形成背面孔，并且在背面的表面上设置绝缘层。 在绝缘层中形成的触点将导电材料电连接到相应的接触注入区域。 接触植入区域的至少一部分被布置成对应于一个或多个像素边缘的形状。

公开(公告)号：US20100327388A1

公开(公告)日：2010-12-30

申请号：US12459121

申请日：2009-06-26

申请人： John P. McCarten ,  Cristian A. Tivarus ,  Joseph R. Summa

发明人： John P. McCarten ,  Cristian A. Tivarus ,  Joseph R. Summa

IPC分类号： H01L31/101

CPC分类号： H01L27/14603 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14647 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/035272

摘要： A back-illuminated image sensor includes a sensor layer of a first conductivity type having a frontside and a backside opposite the frontside. One or more frontside regions of a second conductivity type are formed in at least a portion of the frontside of the sensor layer. A backside region of the second conductivity type is formed in the backside of the sensor layer. A plurality of frontside photodetectors of the first conductivity type is disposed in the sensor layer. A distinct plurality of backside photodetectors of the first conductivity type separate from the plurality of frontside photodetectors are formed in the sensor layer contiguous to portions of the region of the second conductivity type. A voltage terminal is disposed on the frontside of the sensor layer. One or more connecting regions of the second conductivity type are disposed in respective portions of the sensor layer between the voltage terminal and the backside region for electrically connecting the voltage terminal to the backside region.

摘要翻译： 背照式图像传感器包括第一导电类型的传感器层，其具有前侧和与前侧相对的背面。 第二导电类型的一个或多个前侧区域形成在传感器层的前侧的至少一部分中。 第二导电类型的背面区域形成在传感器层的背面。 第一导电类型的多个前端光电检测器设置在传感器层中。 在与第二导电类型的区域的部分相邻的传感器层中形成有与多个前侧光电检测器分离的第一导电类型的不同多个背面光电检测器。 电压端子设置在传感器层的前侧。 第二导电类型的一个或多个连接区域设置在电压端子和背侧区域之间的传感器层的相应部分中，用于将电压端子电连接到背面区域。

公开(公告)号：US07838956B2

公开(公告)日：2010-11-23

申请号：US12336797

申请日：2008-12-17

申请人： John P. McCarten ,  Joseph R. Summa ,  Cristian A. Tivarus

发明人： John P. McCarten ,  Joseph R. Summa ,  Cristian A. Tivarus

IPC分类号： H01L31/00

CPC分类号： H01L27/14689 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14656

摘要： A back-illuminated image sensor includes a sensor layer having a frontside and a backside opposite the frontside. An insulating layer is situated adjacent the backside and a circuit layer is adjacent the frontside. A plurality of photodetectors of a first type conductivity convert light incident on the backside into photo-generated charges. The photodetectors are disposed in the sensor layer adjacent the frontside. A region of a second type conductivity is formed in at least a portion of the sensor layer adjacent the frontside and is connected to a voltage terminal for biasing the second type conductivity region at a predetermined voltage. A well of the second type conductivity is formed in the sensor layer adjacent the backside. Trench isolations in the sensor layer start at the frontside and extend beyond the depletion region of the photodiodes.

摘要翻译： 背照式图像传感器包括具有前侧和与前侧相对的背面的传感器层。 绝缘层位于背面附近，并且电路层邻近前侧。 多个第一类型的光电检测器将入射到背面的光转换为光生电荷。 光电检测器设置在邻近前侧的传感器层中。 在邻近前侧的传感器层的至少一部分中形成有第二导电类型的区域，并连接到用于以预定电压偏置第二类型导电区域的电压端子。 第二类电导率阱形成在靠近背面的传感器层中。 传感器层中的沟槽隔离从前侧开始并延伸超过光电二极管的耗尽区。

公开(公告)号：US20100149379A1

公开(公告)日：2010-06-17

申请号：US12616208

申请日：2009-11-11

申请人： Joseph R. Summa ,  John P. McCarten

发明人： Joseph R. Summa ,  John P. McCarten

IPC分类号： H04N5/76 ,  H04N5/335

CPC分类号： H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/1469

摘要： An image sensor and associated image capture device and method include a sensing wafer with a plurality of charge storage elements. One or more floating diffusions are associated with the plurality of charge storage elements, and charge is transferred among the charge storage elements to the one or more floating diffusions. The one or more floating diffusions on the sensing wafer are electrically connected to support circuitry on a circuit wafer.

摘要翻译： 图像传感器和相关联的图像捕获装置和方法包括具有多个电荷存储元件的感测晶片。 一个或多个浮动扩散与多个电荷存储元件相关联，并且电荷在电荷存储元件之间传递到一个或多个浮动扩散。 感测晶片上的一个或多个浮动扩散电连接到电路晶片上的支撑电路。