公开(公告)号：US10197922B2

公开(公告)日：2019-02-05

申请号：US15302052

申请日：2016-08-04

Applicant: KLA-Tencor Corporation

Inventor： Nadav Gutman ,  Yoel Feler ,  Vladimir Levinski ,  Oded Kaminsky

IPC: G03F7/20

Abstract: Focus metrology methods and modules are provided, which use aerial-images-based transformations to share measurement information derived from multiple targets and/or to design additional targets to specified compliant targets, which enable simple adjustment of focus targets to changing production conditions. Methods comprise positioning two or more focus targets in each wafer field, conducting focus measurements of the targets, transforming the focus measurements into a single set of results for each field, using a transformation between the targets that is based on the aerial images thereof, and deriving focus results from the single sets of results; and possibly designing the focus targets from specified targets using aerial image parameters of the specified targets.

公开(公告)号：US20180301385A1

公开(公告)日：2018-10-18

申请号：US15576811

申请日：2017-10-24

Applicant: KLA-Tencor Corporation

Inventor： Naomi Ittah ,  Nadav Gutman ,  Eran Amit ,  Vincent Immer ,  Einat Peled

IPC: H01L21/66 ,  G01B11/14 ,  G01B11/26 ,  H01L21/67

Abstract: A method of overlay control in silicon wafer manufacturing comprises firstly locating a target comprising a diffraction grating on a wafer layer; and then measuring the alignment of patterns in successive layers of the wafer. The location of the target may be done by the pupil camera rather than a vision camera by scanning the target to obtain pupil images at different locations along a first axis. The pupil images may comprise a first order diffraction pattern for each location. A measurement of signal intensity in the first order diffraction pattern is then obtained for each location. The variation of signal intensity with location along each axis is then analyzed to calculate the location of a feature in the target.

公开(公告)号：US20170212427A1

公开(公告)日：2017-07-27

申请号：US15302052

申请日：2016-08-04

Applicant: KLA-Tencor Corporation

Inventor： Nadav Gutman ,  Yoel Feler ,  Vladimir Levinski ,  Oded Kaminsky

IPC: G03F7/20

CPC classification number: G03F7/70641

Abstract: Focus metrology methods and modules are provided, which use aerial-images-based transformations to share measurement information derived from multiple targets and/or to design additional targets to specified compliant targets, which enable simple adjustment of focus targets to changing production conditions. Methods comprise positioning two or more focus targets in each wafer field, conducting focus measurements of the targets, transforming the focus measurements into a single set of results for each field, using a transformation between the targets that is based on the aerial images thereof, and deriving focus results from the single sets of results; and possibly designing the focus targets from specified targets using aerial image parameters of the specified targets.

公开(公告)号：US20160103946A1

公开(公告)日：2016-04-14

申请号：US14974732

申请日：2015-12-18

Applicant: KLA-Tencor Corporation

Inventor： Mohamed El Kodadi ,  Nuriel Amir ,  Roie Volkovich ,  Vladimir Levinski ,  Yoel Feler ,  Daniel Kandel ,  Nadav Gutman ,  Stilian Pandev ,  Dzimtry Sanko

IPC: G06F17/50 ,  G01N21/47

CPC classification number: G06F17/5081 ,  G01N21/4785 ,  G03F7/70641 ,  G03F7/70683 ,  G06F17/5072

Abstract: Target designs and methods are provided, which relate to periodic structures having elements recurring with a first pitch in a first direction. The elements are periodic with a second pitch along a second direction that is perpendicular to the first direction and are characterized in the second direction by alternating, focus-sensitive and focus-insensitive patterns with the second pitch. In the produced targets, the first pitch may be about the device pitch and the second pitch may be several times larger. The first, focus-insensitive pattern may be produced to yield a first critical dimension and the second, focus-sensitive pattern may be produced to yield a second critical dimension that may be equal to the first critical dimension only when specified focus requirements are satisfied, or provide scatterometry measurements of zeroth as well as first diffraction orders, based on the longer pitch along the perpendicular direction.

Abstract translation: 提供了目标设计和方法，其涉及具有在第一方向上以第一间距重复的元件的周期性结构。 这些元件沿着与第一方向垂直的第二方向具有第二间距周期性，并且通过具有第二间距的交替的，聚焦敏感的和不对焦的图案在第二方向上表征。 在所产生的目标中，第一节距可以是关于装置间距，而第二节距可以是数倍。 可以产生第一个不对焦模式以产生第一临界尺寸，并且可以产生第二焦点敏感图案以仅在满足指定的焦点要求时产生可等于第一临界尺寸的第二临界尺寸， 或者基于沿着垂直方向的较长的间距来提供零和第一衍射级的散射测量。