公开(公告)号：US20120097637A1

公开(公告)日：2012-04-26

申请号：US13379192

申请日：2010-07-29

申请人： Keiji Watanabe ,  Shuji Koyama ,  Hiroyuki Abo ,  Keiji Matsumoto

发明人： Keiji Watanabe ,  Shuji Koyama ,  Hiroyuki Abo ,  Keiji Matsumoto

IPC分类号： B41J2/16

CPC分类号： B41J2/1404 ,  B41J2/14145 ,  B41J2/1603 ,  B41J2/1629 ,  B41J2/1634 ,  B41J2/1639

摘要： Provided is a method of manufacturing a substrate for a liquid discharge head including a first face, energy generating elements which generate the energy to be used to discharge a liquid to a second face opposite to the first face, and liquid supply ports for supplying the liquid to the energy generating elements. The method includes preparing a silicon substrate having, at the first face, an etching mask layer having an opening corresponding to a portion where the liquid supply ports are to be formed, and having first recesses provided within the opening, and second recesses provided in the region of the second face where the liquid supply ports are to be formed, the first recesses and the second recesses being separated from each other by a portion of the substrate; and etching the silicon substrate by crystal anisotropic etching from the opening of the first face to form the liquid supply ports.

摘要翻译： 提供了一种制造用于液体排出头的基板的方法，该液体排出头包括第一面，产生用于将液体排放到与第一面相对的第二面的能量的能量产生元件，以及用于供应液体的液体供给口 到能量产生元件。 该方法包括制备硅衬底，该硅衬底在第一面处具有一蚀刻掩模层，该蚀刻掩模层具有与形成有液体供应端口的部分相对应的开口，并且具有设置在该开口内的第一凹部， 要形成液体供给口的第二面的区域，第一凹部和第二凹部由基板的一部分彼此分离; 以及通过晶体各向异性蚀刻从第一面的开口蚀刻硅衬底以形成液体供应​​端口。

公开(公告)号：US08771531B2

公开(公告)日：2014-07-08

申请号：US13433806

申请日：2012-03-29

申请人： Kenta Furusawa ,  Shuji Koyama ,  Hiroyuki Abo ,  Taichi Yonemoto

发明人： Kenta Furusawa ,  Shuji Koyama ,  Hiroyuki Abo ,  Taichi Yonemoto

IPC分类号： B41J2/16

CPC分类号： B41J2/1603 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2/1645

摘要： A substrate for a liquid ejection head, including: forming a sacrifice layer on a first surface of a silicon substrate in a region in which a liquid supply port is to open, the sacrifice layer containing aluminum which is selectively etched with respect to the silicon substrate; forming an etching mask on a second surface which is a rear surface of the first surface of the silicon substrate, the etching mask having an opening corresponding to the sacrifice layer; a first etching step of etching the silicon substrate by using the etching mask as a mask and by using a first etchant containing 8 mass % or more and less than 15 mass % of tetramethylammonium hydroxide; and after the first etching step, a second etching step of removing the sacrifice layer by using a second etchant containing 15 mass % or more and 25 mass % or less of tetramethylammonium hydroxide.

摘要翻译： 一种液体喷射头用基材，其特征在于，包括：在液体供给口打开的区域的硅基板的第一面上形成牺牲层，所述牺牲层含有相对于所述硅基板有选择地蚀刻的铝 ; 在作为硅衬底的第一表面的后表面的第二表面上形成蚀刻掩模，所述蚀刻掩模具有对应于所述牺牲层的开口; 通过使用蚀刻掩模作为掩模蚀刻硅衬底并使用含有8质量％以上且小于15质量％的四甲基氢氧化铵的第一蚀刻剂的第一蚀刻步骤; 并且在第一蚀刻步骤之后，通过使用含有15质量％以上且25质量％以下的四甲基氢氧化铵的第二蚀刻剂除去牺牲层的第二蚀刻工序。

公开(公告)号：US08492281B2

公开(公告)日：2013-07-23

申请号：US13556991

申请日：2012-07-24

申请人： Hiroyuki Abo ,  Taichi Yonemoto ,  Shuji Koyama ,  Kenta Furusawa ,  Keisuke Kishimoto

发明人： Hiroyuki Abo ,  Taichi Yonemoto ,  Shuji Koyama ,  Kenta Furusawa ,  Keisuke Kishimoto

IPC分类号： H01L21/311

CPC分类号： H01L21/30608 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1635 ,  B41J2/1639 ,  B41J2/1645 ,  C09K13/02

摘要： A liquid composition used to carry out crystal anisotropic etching of a silicon substrate provided with an etching mask formed of a silicon oxide film with the silicon oxide film used as a mask includes cesium hydroxide, an alkaline organic compound, and water.

摘要翻译： 用于对硅基板进行晶体各向异性蚀刻的液体组合物包括氢氧化铯，碱性有机化合物和水，所述硅基板具有由氧化硅膜形成的蚀刻掩模。

公开(公告)号：US20120289055A1

公开(公告)日：2012-11-15

申请号：US13556991

申请日：2012-07-24

申请人： Hiroyuki Abo ,  Taichi Yonemoto ,  Shuji Koyama ,  Kenta Furusawa ,  Keisuke Kishimoto

发明人： Hiroyuki Abo ,  Taichi Yonemoto ,  Shuji Koyama ,  Kenta Furusawa ,  Keisuke Kishimoto

IPC分类号： H01L21/306

CPC分类号： H01L21/30608 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1635 ,  B41J2/1639 ,  B41J2/1645 ,  C09K13/02

摘要： A liquid composition used to carry out crystal anisotropic etching of a silicon substrate provided with an etching mask formed of a silicon oxide film with the silicon oxide film used as a mask includes cesium hydroxide, an alkaline organic compound, and water.

摘要翻译： 用于对硅基板进行晶体各向异性蚀刻的液体组合物包括氢氧化铯，碱性有机化合物和水，所述硅基板具有由氧化硅膜形成的蚀刻掩模。

公开(公告)号：US20120058578A1

公开(公告)日：2012-03-08

申请号：US13215492

申请日：2011-08-23

申请人： Taichi Yonemoto ,  Hiroyuki Abo ,  Keisuke Kishimoto

发明人： Taichi Yonemoto ,  Hiroyuki Abo ,  Keisuke Kishimoto

IPC分类号： H01L21/306

CPC分类号： B41J2/14145 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1634 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2/1646

摘要： Provided is a method of manufacturing a substrate for liquid ejection head, including: forming a groove portion by etching on one surface side of a silicon substrate, the groove portion being formed so as to surround a portion at which a liquid supply port is to be formed on an inner side of the groove portion; forming a protective layer on the one surface side of the silicon substrate, the protective layer being formed inside the groove portion and on an outer side of the groove portion; and forming the liquid supply port by subjecting the silicon substrate to crystal anisotropic etching treatment with use of the protective layer as a mask.

摘要翻译： 本发明提供一种液体喷射头用基材的制造方法，其特征在于，包括：通过在硅基板的一个表面侧进行蚀刻来形成槽部，所述槽部形成为包围供给口的部分 形成在所述槽部的内侧; 在所述硅基板的一个表面侧上形成保护层，所述保护层形成在所述槽部内部和所述槽部的外侧; 以及通过使用保护层作为掩模对硅衬底进行结晶各向异性蚀刻处理来形成液体供给口。

公开(公告)号：US20100216264A1

公开(公告)日：2010-08-26

申请号：US12709544

申请日：2010-02-22

申请人： Keiji Matsumoto ,  Shuji Koyama ,  Hiroyuki Abo ,  Keiji Watanabe

发明人： Keiji Matsumoto ,  Shuji Koyama ,  Hiroyuki Abo ,  Keiji Watanabe

IPC分类号： H01L21/311 ,  H01L21/263

CPC分类号： B41J2/1629 ,  B41J2/1603 ,  B41J2/1631 ,  B41J2/1634

摘要： A method of manufacturing a substrate for a liquid discharge head, the substrate being a silicon substrate having a first surface opposed to a second surface, the method comprising the steps of providing a layer on the second surface of the silicon substrate, wherein the layer has a lower etch rate than silicon when exposed to an etchant of silicon, partially removing the layer so as to expose part of the second surface of the silicon substrate, wherein the exposed part surrounds at least one part of the layer; and wet etching the layer and the exposed part of the second surface of the silicon substrate, using the etchant of silicon, to form a liquid supply port extending from the second surface to the first surface of the silicon substrate.

摘要翻译： 一种液体排出头基板的制造方法，所述基板为具有与第二表面相对的第一表面的硅基板，所述方法包括以下步骤：在所述硅基板的第二表面上设置层，其中，所述层具有 当暴露于硅的蚀刻剂时，比硅蚀刻速率低，部分地去除该层以暴露硅衬底的第二表面的一部分，其中暴露部分围绕该层的至少一部分; 以及使用硅蚀刻剂湿法蚀刻硅衬底的第二表面的层和暴露部分，以形成从硅衬底的第二表面延伸到第一表面的液体供应端口。