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    Method of producing substrate for liquid ejection head
    4.
    发明授权
    Method of producing substrate for liquid ejection head 有权
    液体喷射头用基材的制造方法

    公开(公告)号：US08771531B2

    公开(公告)日：2014-07-08

    申请号：US13433806

    申请日：2012-03-29

    申请人： Kenta Furusawa ,  Shuji Koyama ,  Hiroyuki Abo ,  Taichi Yonemoto

    发明人： Kenta Furusawa ,  Shuji Koyama ,  Hiroyuki Abo ,  Taichi Yonemoto

    IPC分类号： B41J2/16

    CPC分类号： B41J2/1603 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2/1645

    摘要： A substrate for a liquid ejection head, including: forming a sacrifice layer on a first surface of a silicon substrate in a region in which a liquid supply port is to open, the sacrifice layer containing aluminum which is selectively etched with respect to the silicon substrate; forming an etching mask on a second surface which is a rear surface of the first surface of the silicon substrate, the etching mask having an opening corresponding to the sacrifice layer; a first etching step of etching the silicon substrate by using the etching mask as a mask and by using a first etchant containing 8 mass % or more and less than 15 mass % of tetramethylammonium hydroxide; and after the first etching step, a second etching step of removing the sacrifice layer by using a second etchant containing 15 mass % or more and 25 mass % or less of tetramethylammonium hydroxide.

    摘要翻译： 一种液体喷射头用基材，其特征在于，包括：在液体供给口打开的区域的硅基板的第一面上形成牺牲层，所述牺牲层含有相对于所述硅基板有选择地蚀刻的铝 ; 在作为硅衬底的第一表面的后表面的第二表面上形成蚀刻掩模，所述蚀刻掩模具有对应于所述牺牲层的开口; 通过使用蚀刻掩模作为掩模蚀刻硅衬底并使用含有8质量％以上且小于15质量％的四甲基氢氧化铵的第一蚀刻剂的第一蚀刻步骤; 并且在第一蚀刻步骤之后，通过使用含有15质量％以上且25质量％以下的四甲基氢氧化铵的第二蚀刻剂除去牺牲层的第二蚀刻工序。

    METHOD OF PRODUCING SUBSTRATE FOR LIQUID EJECTION HEAD
    5.
    发明申请
    METHOD OF PRODUCING SUBSTRATE FOR LIQUID EJECTION HEAD 有权
    生产用于液体喷射头的基材的方法

    公开(公告)号：US20120267342A1

    公开(公告)日：2012-10-25

    申请号：US13433806

    申请日：2012-03-29

    申请人： Kenta Furusawa ,  Shuj i Koyama ,  Hiroyuki Abo ,  Taichi Yonemoto

    发明人： Kenta Furusawa ,  Shuj i Koyama ,  Hiroyuki Abo ,  Taichi Yonemoto

    IPC分类号： B44C1/22

    CPC分类号： B41J2/1603 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2/1645

    摘要： A substrate for a liquid ejection head, including: forming a sacrifice layer on a first surface of a silicon substrate in a region in which a liquid supply port is to open, the sacrifice layer containing aluminum which is selectively etched with respect to the silicon substrate; forming an etching mask on a second surface which is a rear surface of the first surface of the silicon substrate, the etching mask having an opening corresponding to the sacrifice layer; a first etching step of etching the silicon substrate by using the etching mask as a mask and by using a first etchant containing 8 mass % or more and less than 15 mass % of tetramethylammonium hydroxide; and after the first etching step, a second etching step of removing the sacrifice layer by using a second etchant containing 15 mass % or more and 25 mass % or less of tetramethylammonium hydroxide.

    摘要翻译： 一种液体喷射头用基材，其特征在于，包括：在液体供给口打开的区域的硅基板的第一面上形成牺牲层，所述牺牲层含有相对于所述硅基板有选择地蚀刻的铝 ; 在作为硅衬底的第一表面的后表面的第二表面上形成蚀刻掩模，所述蚀刻掩模具有对应于所述牺牲层的开口; 通过使用蚀刻掩模作为掩模蚀刻硅衬底并使用含有8质量％以上且小于15质量％的四甲基氢氧化铵的第一蚀刻剂的第一蚀刻步骤; 并且在第一蚀刻步骤之后，通过使用含有15质量％以上且25质量％以下的四甲基氢氧化铵的第二蚀刻剂除去牺牲层的第二蚀刻工序。

    Method for producing liquid-discharge-head substrate
    6.
    发明授权
    Method for producing liquid-discharge-head substrate 有权
    液体排出头基板的制造方法

    公开(公告)号：US08951815B2

    公开(公告)日：2015-02-10

    申请号：US13526958

    申请日：2012-06-19

    申请人： Ryotaro Murakami ,  Shuji Koyama ,  Keisuke Kishimoto ,  Kenta Furusawa

    发明人： Ryotaro Murakami ,  Shuji Koyama ,  Keisuke Kishimoto ,  Kenta Furusawa

    IPC分类号： H01L21/00 ,  B41J2/16

    CPC分类号： B41J2/1603 ,  B41J2/1629 ,  B41J2/1634 ,  B41J2/1639

    摘要： A method for producing a liquid-discharge-head substrate includes a step of preparing a silicon substrate including, at a front-surface side of the silicon substrate, an energy generating element; a step of forming a first etchant introduction hole on the front-surface side of the silicon substrate; a step of supplying a first etchant into the first etchant introduction hole formed on the front-surface side of the silicon substrate, and supplying a second etchant to a back-surface side of the silicon substrate; a step of stopping the supply of the second etchant; and a step of, after the supply of the second etchant has been stopped, forming a liquid supply port extending through front and back surfaces of the silicon substrate by the supply of the first etchant.

    摘要翻译： 一种液体排出头基板的制造方法，其特征在于，包括在所述硅基板的表面侧具有能量产生元件的硅基板的制造工序。 在所述硅基板的表面侧形成第一蚀刻剂导入孔的工序; 向在硅衬底的前表面侧形成的第一蚀刻剂引入孔中提供第一蚀刻剂并将第二蚀刻剂供应到硅衬底的背表面的步骤; 停止供应第二蚀刻剂的步骤; 以及在第二蚀刻液的供应已经停止之后，通过供给第一蚀刻剂形成延伸穿过硅衬底的前表面和后表面的液体供给口的步骤。

    METHOD FOR PRODUCING LIQUID-DISCHARGE-HEAD SUBSTRATE
    8.
    发明申请
    METHOD FOR PRODUCING LIQUID-DISCHARGE-HEAD SUBSTRATE 有权
    生产液体放电头基板的方法

    公开(公告)号：US20120329181A1

    公开(公告)日：2012-12-27

    申请号：US13526958

    申请日：2012-06-19

    申请人： Ryotaro Murakami ,  Shuji Koyama ,  Keisuke Kishimoto ,  Kenta Furusawa

    发明人： Ryotaro Murakami ,  Shuji Koyama ,  Keisuke Kishimoto ,  Kenta Furusawa

    IPC分类号： H01L21/02

    CPC分类号： B41J2/1603 ,  B41J2/1629 ,  B41J2/1634 ,  B41J2/1639

    摘要： A method for producing a liquid-discharge-head substrate includes a step of preparing a silicon substrate including, at a front-surface side of the silicon substrate, an energy generating element; a step of forming a first etchant introduction hole on the front-surface side of the silicon substrate; a step of supplying a first etchant into the first etchant introduction hole formed on the front-surface side of the silicon substrate, and supplying a second etchant to a back-surface side of the silicon substrate; a step of stopping the supply of the second etchant; and a step of, after the supply of the second etchant has been stopped, forming a liquid supply port extending through front and back surfaces of the silicon substrate by the supply of the first etchant.

    摘要翻译： 一种液体排出头基板的制造方法，其特征在于，包括在所述硅基板的表面侧具有能量产生元件的硅基板的制造工序。 在所述硅基板的表面侧形成第一蚀刻剂导入孔的工序; 向在硅衬底的前表面侧形成的第一蚀刻剂引入孔中提供第一蚀刻剂并将第二蚀刻剂供应到硅衬底的背表面的步骤; 停止供应第二蚀刻剂的步骤; 以及在第二蚀刻液的供应已经停止之后，通过供给第一蚀刻剂形成延伸穿过硅衬底的前表面和后表面的液体供给口的步骤。