公开(公告)号：US20100216264A1

公开(公告)日：2010-08-26

申请号：US12709544

申请日：2010-02-22

申请人： Keiji Matsumoto ,  Shuji Koyama ,  Hiroyuki Abo ,  Keiji Watanabe

发明人： Keiji Matsumoto ,  Shuji Koyama ,  Hiroyuki Abo ,  Keiji Watanabe

IPC分类号： H01L21/311 ,  H01L21/263

CPC分类号： B41J2/1629 ,  B41J2/1603 ,  B41J2/1631 ,  B41J2/1634

摘要： A method of manufacturing a substrate for a liquid discharge head, the substrate being a silicon substrate having a first surface opposed to a second surface, the method comprising the steps of providing a layer on the second surface of the silicon substrate, wherein the layer has a lower etch rate than silicon when exposed to an etchant of silicon, partially removing the layer so as to expose part of the second surface of the silicon substrate, wherein the exposed part surrounds at least one part of the layer; and wet etching the layer and the exposed part of the second surface of the silicon substrate, using the etchant of silicon, to form a liquid supply port extending from the second surface to the first surface of the silicon substrate.

摘要翻译： 一种液体排出头基板的制造方法，所述基板为具有与第二表面相对的第一表面的硅基板，所述方法包括以下步骤：在所述硅基板的第二表面上设置层，其中，所述层具有 当暴露于硅的蚀刻剂时，比硅蚀刻速率低，部分地去除该层以暴露硅衬底的第二表面的一部分，其中暴露部分围绕该层的至少一部分; 以及使用硅蚀刻剂湿法蚀刻硅衬底的第二表面的层和暴露部分，以形成从硅衬底的第二表面延伸到第一表面的液体供应端口。

公开(公告)号：US20120097637A1

公开(公告)日：2012-04-26

申请号：US13379192

申请日：2010-07-29

申请人： Keiji Watanabe ,  Shuji Koyama ,  Hiroyuki Abo ,  Keiji Matsumoto

发明人： Keiji Watanabe ,  Shuji Koyama ,  Hiroyuki Abo ,  Keiji Matsumoto

IPC分类号： B41J2/16

CPC分类号： B41J2/1404 ,  B41J2/14145 ,  B41J2/1603 ,  B41J2/1629 ,  B41J2/1634 ,  B41J2/1639

摘要： Provided is a method of manufacturing a substrate for a liquid discharge head including a first face, energy generating elements which generate the energy to be used to discharge a liquid to a second face opposite to the first face, and liquid supply ports for supplying the liquid to the energy generating elements. The method includes preparing a silicon substrate having, at the first face, an etching mask layer having an opening corresponding to a portion where the liquid supply ports are to be formed, and having first recesses provided within the opening, and second recesses provided in the region of the second face where the liquid supply ports are to be formed, the first recesses and the second recesses being separated from each other by a portion of the substrate; and etching the silicon substrate by crystal anisotropic etching from the opening of the first face to form the liquid supply ports.

摘要翻译： 提供了一种制造用于液体排出头的基板的方法，该液体排出头包括第一面，产生用于将液体排放到与第一面相对的第二面的能量的能量产生元件，以及用于供应液体的液体供给口 到能量产生元件。 该方法包括制备硅衬底，该硅衬底在第一面处具有一蚀刻掩模层，该蚀刻掩模层具有与形成有液体供应端口的部分相对应的开口，并且具有设置在该开口内的第一凹部， 要形成液体供给口的第二面的区域，第一凹部和第二凹部由基板的一部分彼此分离; 以及通过晶体各向异性蚀刻从第一面的开口蚀刻硅衬底以形成液体供应​​端口。

公开(公告)号：US08808555B2

公开(公告)日：2014-08-19

申请号：US13379192

申请日：2010-07-29

申请人： Keiji Watanabe ,  Shuji Koyama ,  Hiroyuki Abo ,  Keiji Matsumoto

发明人： Keiji Watanabe ,  Shuji Koyama ,  Hiroyuki Abo ,  Keiji Matsumoto

IPC分类号： B41J2/16 ,  B44C1/22 ,  B41J2/14

CPC分类号： B41J2/1404 ,  B41J2/14145 ,  B41J2/1603 ,  B41J2/1629 ,  B41J2/1634 ,  B41J2/1639

摘要： Provided is a method of manufacturing a substrate for a liquid discharge head including a first face, energy generating elements which generate the energy to be used to discharge a liquid to a second face opposite to the first face, and liquid supply ports for supplying the liquid to the energy generating elements. The method includes preparing a silicon substrate having, at the first face, an etching mask layer having an opening corresponding to a portion where the liquid supply ports are to be formed, and having first recesses provided within the opening, and second recesses provided in the region of the second face where the liquid supply ports are to be formed, the first recesses and the second recesses being separated from each other by a portion of the substrate; and etching the silicon substrate by crystal anisotropic etching from the opening of the first face to form the liquid supply ports.

摘要翻译： 提供了一种制造用于液体排出头的基板的方法，该液体排出头包括第一面，产生用于将液体排放到与第一面相对的第二面的能量的能量产生元件，以及用于供应液体的液体供给口 到能量产生元件。 该方法包括制备硅衬底，该硅衬底在第一面处具有一蚀刻掩模层，该蚀刻掩模层具有与形成有液体供应端口的部分相对应的开口，并且具有设置在该开口内的第一凹部， 要形成液体供给口的第二面的区域，第一凹部和第二凹部由基板的一部分彼此分离; 以及通过晶体各向异性蚀刻从第一面的开口蚀刻硅衬底以形成液体供应​​端口。

公开(公告)号：US08377828B2

公开(公告)日：2013-02-19

申请号：US12709544

申请日：2010-02-22

申请人： Keiji Matsumoto ,  Shuji Koyama ,  Hiroyuki Abo ,  Keiji Watanabe

发明人： Keiji Matsumoto ,  Shuji Koyama ,  Hiroyuki Abo ,  Keiji Watanabe

IPC分类号： H01L21/302

CPC分类号： B41J2/1629 ,  B41J2/1603 ,  B41J2/1631 ,  B41J2/1634

摘要： A method of manufacturing a substrate for a liquid discharge head, the substrate being a silicon substrate having a first surface opposed to a second surface, the method comprising the steps of providing a layer on the second surface of the silicon substrate, wherein the layer has a lower etch rate than silicon when exposed to an etchant of silicon, partially removing the layer so as to expose part of the second surface of the silicon substrate, wherein the exposed part surrounds at least one part of the layer; and wet etching the layer and the exposed part of the second surface of the silicon substrate, using the etchant of silicon, to form a liquid supply port extending from the second surface to the first surface of the silicon substrate.

摘要翻译： 一种液体排出头基板的制造方法，所述基板为具有与第二表面相对的第一表面的硅基板，所述方法包括以下步骤：在所述硅基板的第二表面上设置层，其中，所述层具有 当暴露于硅的蚀刻剂时，比硅蚀刻速率低，部分地去除该层以暴露硅衬底的第二表面的一部分，其中暴露部分围绕该层的至少一部分; 以及使用硅蚀刻剂湿法蚀刻硅衬底的第二表面的层和暴露部分，以形成从硅衬底的第二表面延伸到第一表面的液体供应端口。

公开(公告)号：US20110151598A1

公开(公告)日：2011-06-23

申请号：US12973708

申请日：2010-12-20

申请人： Hiroyuki Abo ,  Keiji Watanabe ,  Keiji Matsumoto

发明人： Hiroyuki Abo ,  Keiji Watanabe ,  Keiji Matsumoto

IPC分类号： H01L21/302

CPC分类号： B41J2/1603 ,  B41J2/1629

摘要： A method for manufacturing a substrate for liquid-ejecting heads includes etching a surface of a silicon substrate using a first etchant, with a silicon oxide layer as a mask, to form a depression as a part of a liquid supply port, and subsequently etching at least the silicon oxide layer and the thickness sandwiched between the depression and the etched surface of the silicon substrate with a second etchant to form the liquid supply port.

摘要翻译： 一种液体喷射头用基板的制造方法，其特征在于，使用第一蚀刻剂，以氧化硅层作为掩模蚀刻硅基板的表面，形成作为液体供给口的一部分的凹部， 用第二蚀刻剂将硅氧化物层和夹在硅衬底的蚀刻表面之间的厚度最小化，以形成液体供应​​端口。

公开(公告)号：US08703509B2

公开(公告)日：2014-04-22

申请号：US12973708

申请日：2010-12-20

申请人： Hiroyuki Abo ,  Keiji Watanabe ,  Keiji Matsumoto

发明人： Hiroyuki Abo ,  Keiji Watanabe ,  Keiji Matsumoto

IPC分类号： H01L21/311 ,  H01L21/302

CPC分类号： B41J2/1603 ,  B41J2/1629

摘要： A method for manufacturing a substrate for liquid-ejecting heads includes etching a surface of a silicon substrate using a first etchant, with a silicon oxide layer as a mask, to form a depression as a part of a liquid supply port, and subsequently etching at least the silicon oxide layer and the thickness sandwiched between the depression and the etched surface of the silicon substrate with a second etchant to form the liquid supply port.

摘要翻译： 一种液体喷射头用基板的制造方法，其特征在于，使用第一蚀刻剂，以氧化硅层作为掩模蚀刻硅基板的表面，形成作为液体供给口的一部分的凹部， 用第二蚀刻剂将硅氧化物层和夹在硅衬底的蚀刻表面之间的厚度最小化，以形成液体供应​​端口。

公开(公告)号：US09257583B2

公开(公告)日：2016-02-09

申请号：US14119195

申请日：2011-05-25

申请人： Keiji Watanabe ,  Ryuta Tsuchiya ,  Takashi Hattori ,  Mieko Matsumura

发明人： Keiji Watanabe ,  Ryuta Tsuchiya ,  Takashi Hattori ,  Mieko Matsumura

IPC分类号： H01L31/00 ,  H01L31/0352 ,  H01L31/0236

CPC分类号： H01L31/035281 ,  H01L31/02366 ,  H01L31/03529 ,  Y02E10/50

摘要： A solar cell including a substrate 1, a nanopillar 11 having diameter D1 connected to the substrate 1, and a nanopillar 12 having diameter D2 connected to the substrate 1 is characterized in that D2 is greater than D1 in order to realize a solar cell having, as the surface structure, a nanopillar array structure with which it is possible to prevent reflection within the broad wavelength region of solar light. A nanopillar array structure 21 formed from two types of nanopillars having different diameters has a point of minimum reflectivity of a nanopillar array structure formed from the nanopillar 11 having diameter D1 and a point of minimum reflectivity of a nanopillar array structure formed from the nanopillar 12 having diameter D2 and therefore, is capable of preventing reflection within the broad wavelength region of solar light.

摘要翻译： 包括基板1，具有与基板1连接的直径D1的纳米柱11和具有连接到基板1的直径D2的纳米柱12的太阳能电池的特征在于，D2大于D1，以实现太阳能电池， 作为表面结构，可以防止在太阳光的宽波长范围内的反射的纳米柱阵列结构。 由具有不同直径的两种类型的纳米柱形成的纳米柱阵列结构21具有由具有直径D1的纳米柱11形成的纳米柱阵列结构的最小反射率点和由纳米柱12形成的纳米柱阵列结构的最小反射率点， 因此，能够防止太阳光的宽波长范围内的反射。

公开(公告)号：US08674520B2

公开(公告)日：2014-03-18

申请号：US13355805

申请日：2012-01-23

申请人： Nobuhiro Imaizumi ,  Keishiro Okamoto ,  Keiji Watanabe

发明人： Nobuhiro Imaizumi ,  Keishiro Okamoto ,  Keiji Watanabe

IPC分类号： H01L29/40

CPC分类号： H01L23/49513 ,  H01L23/3107 ,  H01L23/49562 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/29 ,  H01L2224/29076 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29147 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48472 ,  H01L2224/4903 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/92247 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10329 ,  H01L2924/13064 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/15763 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01046 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/3512

摘要： A method for manufacturing a semiconductor device includes placing a sheet containing a fibrous material having at least one outer surface having a metal on a semiconductor chip-mounting region of a substrate; forming a bonding layer containing a fusible metal on the semiconductor chip-mounting region; placing a semiconductor chip on the semiconductor chip-mounting region; and bonding the semiconductor chip to the semiconductor chip-mounting region with the fusible metal-containing bonding layer by heating.

摘要翻译： 一种半导体器件的制造方法，其特征在于，在衬底的半导体芯片安装区域上放置含有具有至少一个具有金属的外表面的纤维材料的片材; 在半导体芯片安装区域上形成含有可熔金属的接合层; 将半导体芯片放置在半导体芯片安装区域上; 并且通过加热将半导体芯片与可熔融金属键合层接合到半导体芯片安装区域。

公开(公告)号：US08449783B2

公开(公告)日：2013-05-28

申请号：US13545370

申请日：2012-07-10

申请人： Keiji Watanabe

发明人： Keiji Watanabe

IPC分类号： H01B13/00

CPC分类号： B41J2/1603 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1634 ,  B41J2/1635 ,  B41J2/1639 ,  B41J2/1645

摘要： A liquid ejection head substrate is manufactured by forming a wiring pattern on one surface of a substrate, forming an etching mask layer on the other surface of the substrate, forming a positioning reference mark on the etching mask layer by means of a laser, forming an opening pattern groove running through the etching mask layer and having a bottom in the inside of the silicon substrate, using the positioning reference mark, and forming a liquid supply port running through the silicon substrate by etching the silicon substrate from the opening pattern groove to the one surface by means of crystal anisotropic etching.

摘要翻译： 通过在基板的一个表面上形成布线图案，在基板的另一个表面上形成蚀刻掩模层，通过激光在蚀刻掩模层上形成定位参考标记来制造液体喷射头基板，形成 通过蚀刻掩模层延伸的开口图案凹槽，并且使用定位参考标记在硅衬底的内部具有底部，并且通过从开口图案凹槽蚀刻硅衬底而形成穿过硅衬底的液体供给口， 一个表面借助于晶体各向异性蚀刻。

公开(公告)号：US07575135B2

公开(公告)日：2009-08-18

申请号：US10500789

申请日：2003-01-27

申请人： Yutaka Awajiya ,  Mikio Suzuki ,  Keiji Watanabe ,  Makoto Iiyama

发明人： Yutaka Awajiya ,  Mikio Suzuki ,  Keiji Watanabe ,  Makoto Iiyama

IPC分类号： B22D41/00

CPC分类号： B22D41/54

摘要： An immersion nozzle for continuous casting of steel supplies molten steel into a mold. At least a part of the immersion nozzle is formed of a refractory having a desulfurizing ability. A method for continuous casting of steel employs the immersion nozzle to supply molten steel into a mold using the immersion nozzle for continuous casting.

摘要翻译： 用于连续铸钢的浸入式喷嘴将钢水供应到模具中。 浸渍喷嘴的至少一部分由具有脱硫能力的耐火材料形成。 钢的连续铸造方法采用浸渍喷嘴，使用浸入式喷嘴连续铸造，将钢水供给到模具中。