公开(公告)号：US07772636B2

公开(公告)日：2010-08-10

申请号：US11785694

申请日：2007-04-19

申请人： Hirokazu Ishida ,  Masayuki Tanaka

发明人： Hirokazu Ishida ,  Masayuki Tanaka

IPC分类号： H01L21/336

CPC分类号： H01L27/115 ,  H01L27/11521

摘要： A nonvolatile semiconductor memory device includes a first dielectric layer formed on the major surface of a semiconductor substrate, a floating gate electrode layer formed on the first dielectric layer, a second dielectric layer obtained by sequentially forming, on the floating gate electrode layer, a lower dielectric film mainly containing silicon and nitrogen, an intermediate dielectric film, and an upper dielectric film mainly containing silicon and nitrogen, a control gate electrode layer formed on the second dielectric layer, and a buried dielectric layer formed by covering the two side surfaces in the gate width direction of the stacked structure including the above-mentioned layers. The nonvolatile semiconductor memory device further includes a silicon oxide film formed near the buried dielectric layer in the interface between the floating gate electrode layer and lower dielectric film.

摘要翻译： 非易失性半导体存储器件包括形成在半导体衬底的主表面上的第一电介质层，形成在第一电介质层上的浮栅电极层，通过在浮栅电极层上依次形成下层 主要含有硅和氮的电介质膜，中间电介质膜和主要含有硅和氮的上电介质膜，形成在第二介电层上的控制栅极电极层和通过覆盖第二电介质层中的两个侧表面而形成的掩埋电介质层 包括上述层的层叠结构的栅极宽度方向。 非易失性半导体存储器件还包括在浮置栅极电极层和下部电介质膜之间的界面中形成在掩埋电介质层附近的氧化硅膜。

公开(公告)号：US20100102377A1

公开(公告)日：2010-04-29

申请号：US12467424

申请日：2009-05-18

申请人： Hirofumi IIKAWA ,  Masayuki Tanaka

发明人： Hirofumi IIKAWA ,  Masayuki Tanaka

IPC分类号： H01L29/792 ,  H01L21/762 ,  H01L21/336

CPC分类号： H01L29/42336 ,  H01L21/76224 ,  H01L27/11519 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/513 ,  H01L29/7881

摘要： A nonvolatile semiconductor memory device includes a semiconductor substrate, a first insulating layer formed on the semiconductor substrate, a plurality of charge storage layers formed on the first insulating layer, a plurality of element isolation insulating films formed between the charge storage layers respectively, a second insulating layer formed on the charge storage layers and the element isolation insulating films, the second insulating layer including a stacked structure of a first silicon nitride film, a first silicon oxide film, an intermediate insulating film having a relative dielectric constant of not less than 7 and a second silicon oxide film, and a control electrode formed on the second insulating layer. The first silicon nitride film has a nitrogen concentration of not less than 21×1015 atoms/cm2.

摘要翻译： 非易失性半导体存储器件包括半导体衬底，形成在半导体衬底上的第一绝缘层，形成在第一绝缘层上的多个电荷存储层，分别形成在电荷存储层之间的多个元件隔离绝缘膜，第二绝缘层 绝缘层，形成在电荷存储层和元件隔离绝缘膜上，第二绝缘层包括第一氮化硅膜，第一氧化硅膜，相对介电常数不小于7的中间绝缘膜的堆叠结构 和第二氧化硅膜，以及形成在第二绝缘层上的控制电极。 第一氮化硅膜的氮浓度不小于21×10 15原子/ cm 2。

公开(公告)号：US07635890B2

公开(公告)日：2009-12-22

申请号：US11783934

申请日：2007-04-13

申请人： Yoshio Ozawa ,  Akihito Yamamoto ,  Masayuki Tanaka ,  Katsuaki Natori ,  Katsuyuki Sekine ,  Daisuke Nishida ,  Ryota Fujitsuka

发明人： Yoshio Ozawa ,  Akihito Yamamoto ,  Masayuki Tanaka ,  Katsuaki Natori ,  Katsuyuki Sekine ,  Daisuke Nishida ,  Ryota Fujitsuka

IPC分类号： H01L29/76

CPC分类号： H01L29/7883 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42324

摘要： A semiconductor device includes a semiconductor substrate, a plurality of nonvolatile memory cells provided on the semiconductor substrate, each of the plurality of nonvolatile memory cells comprising a first insulating film provided on the semiconductor substrate, a charge storage layer provided on the first insulating film, a control gate electrode provided above the charge storage layer, a second insulating film provided between the control gate electrode and the charge storage layer, the second insulating film between adjacent charge storage layers including a first region having permittivity lower than that of the second insulating film on a top surface of the charge storage layer in a cross-section view of a channel width direction of the nonvolatile memory cell, and the first region having composition differing from that of the second insulating film on the top surface of the charge storage layer.

摘要翻译： 半导体器件包括半导体衬底，设置在半导体衬底上的多个非易失性存储单元，所述多个非易失性存储单元中的每一个包括设置在所述半导体衬底上的第一绝缘膜，设置在所述第一绝缘膜上的电荷存储层， 设置在所述电荷存储层上方的控制栅电极，设置在所述控制栅电极和所述电荷存储层之间的第二绝缘膜，所述相邻电荷存储层之间的所述第二绝缘膜包括具有低于所述第二绝缘膜的介电常数的第一区域 在电荷存储层的顶表面上，以非易失性存储单元的沟道宽度方向的横截面视图，并且第一区域具有与电荷存储层的顶表面上的第二绝缘膜不同的组成。

公开(公告)号：USD600655S1

公开(公告)日：2009-09-22

申请号：US29282140

申请日：2007-07-12

申请人： Takeshi Miyasaka ,  Masayuki Tanaka

设计人： Takeshi Miyasaka ,  Masayuki Tanaka

公开(公告)号：US20090207288A1

公开(公告)日：2009-08-20

申请号：US11994564

申请日：2006-06-01

申请人： Masayuki Tanaka ,  Masatoshi Okutomi

发明人： Masayuki Tanaka ,  Masatoshi Okutomi

IPC分类号： H04N5/335

CPC分类号： H04N9/045 ,  H04N5/2355 ,  H04N2209/045

摘要： The present invention provides a signal readout method of solid-state imaging device which can simultaneously readouts the signals having different properties that can generate multiple images obtained by capturing the same subject under different capturing conditions from one solid-state imaging device.A signal readout method of solid-state imaging device that is applied to a solid-state imaging device with a color filter array (CFA) and multiple pixels, the method characterized in that a pixel mixture of a different number of pixels is performed for every readout signal in the solid-state imaging device, and a signal after the pixel mixture is readout. The signal after the pixel mixture means a first signal after the pixel mixture that is obtained by performing the pixel mixture of predetermined L pixels (L≦n×m) within (n×m) pixels (n and m are natural numbers) consisting of n pixels in a vertical direction and m pixels in a horizontal direction of the solid-state imaging device, and a second signal after the pixel mixture that is obtained by down sampling pixel signals of (n×m) pixels without performing pixel mixture of (n×m) pixels.

摘要翻译： 本发明提供了一种固态成像装置的信号读出方法，其可以同时读出具有不同属性的信号，这些信号可以产生通过在不同拍摄条件下从一个固态成像装置捕获相同被摄体而获得的多个图像。 一种固态成像装置的信号读出方法，其应用于具有滤色器阵列（CFA）和多个像素的固态成像装置，该方法的特征在于，对每个像素执行不同数量的像素的像素混合 在固态成像装置中的读出信号，以及像素混合后的信号被读出。 像素混合后的信号是指在通过在（n×m）个像素（n和m是自然数）内由n个像素组成的预定的L个像素（L <= n×m）中的像素混合执行的像素混合之后的第一信号， 在固态摄像装置的水平方向上的垂直方向和m个像素以及通过对（n×m）像素的像素信号进行下采样而不执行（n×m）像素的像素混合而获得的像素混合之后的第二信号。

公开(公告)号：US20090152618A1

公开(公告)日：2009-06-18

申请号：US12333983

申请日：2008-12-12

申请人： Kazuhiro Matsuo ,  Masayuki Tanaka ,  Takeo Furuhata ,  Koji Nakahara

发明人： Kazuhiro Matsuo ,  Masayuki Tanaka ,  Takeo Furuhata ,  Koji Nakahara

IPC分类号： H01L29/792 ,  H01L21/28

CPC分类号： H01L29/792 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/513 ,  H01L29/7881

摘要： A nonvolatile semiconductor memory device includes a semiconductor substrate, a first insulation layer formed on the semiconductor substrate, a charge storage layer formed on the first insulation layer, a second insulation layer formed on the charge storage layer, a control electrode formed on the second insulation layer. The second insulation layer includes a first silicon oxide film, an intermediate insulating film formed on the first silicon oxide film and having a relative permittivity of not less than 7, and a second silicon oxide film formed on the intermediate insulating film. A charge trap layer is formed at least in either first or second silicon oxide film or a boundary between the first silicon oxide film and the intermediate insulating film or a boundary between the second silicon oxide film and the intermediate insulating film.

摘要翻译： 非易失性半导体存储器件包括半导体衬底，形成在半导体衬底上的第一绝缘层，形成在第一绝缘层上的电荷存储层，形成在电荷存储层上的第二绝缘层，形成在第二绝缘层上的控制电极 层。 第二绝缘层包括第一氧化硅膜，形成在第一氧化硅膜上并具有不小于7的相对介电常数的中间绝缘膜和形成在中间绝缘膜上的第二氧化硅膜。 至少在第一或第二氧化硅膜或第一氧化硅膜和中间绝缘膜之间的边界或第二氧化硅膜和中间绝缘膜之间的边界上形成电荷陷阱层。

公开(公告)号：US07544593B2

公开(公告)日：2009-06-09

申请号：US11999958

申请日：2007-12-07

申请人： Yoshitaka Tsunashima ,  Seiji Ihumiya ,  Yasumasa Suizu ,  Yoshio Ozawa ,  Kiyotaka Miyano ,  Masayuki Tanaka

发明人： Yoshitaka Tsunashima ,  Seiji Ihumiya ,  Yasumasa Suizu ,  Yoshio Ozawa ,  Kiyotaka Miyano ,  Masayuki Tanaka

IPC分类号： H01L21/28 ,  H01L21/44

CPC分类号： H01L21/82345 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/31604 ,  H01L21/823462 ,  H01L21/823475 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/6656

摘要： Claimed and disclosed is a semiconductor device including a transistor having a gate insulating film structure containing nitrogen or fluorine in a compound, such as metal silicate, containing metal, silicon and oxygen, a gate insulating film structure having a laminated structure of an amorphous metal oxide film and metal silicate film, or a gate insulating film structure having a first gate insulating film including an oxide film of a first metal element and a second gate insulating film including a metal silicate film of a second metal element.

摘要翻译： 权利要求和公开的是一种半导体器件，包括具有在包含金属，硅和氧的金属硅酸盐的化合物中含有氮或氟的栅极绝缘膜结构的晶体管，具有非晶态金属氧化物层叠结构的栅极绝缘膜结构 膜和金属硅酸盐膜，或具有包括第一金属元素的氧化物膜的第一栅极绝缘膜和包括第二金属元素的金属硅酸盐膜的第二栅极绝缘膜的栅极绝缘膜结构。

公开(公告)号：US20090025870A1

公开(公告)日：2009-01-29

申请号：US11994169

申请日：2006-06-30

申请人： Masayuki Tanaka

发明人： Masayuki Tanaka

IPC分类号： B29C65/48 ,  C08J3/28

CPC分类号： C09K3/10 ,  C08F265/04 ,  C08F265/06 ,  C08F290/04 ,  C08F290/06 ,  C08F292/00 ,  C08L2666/02 ,  C09D151/10 ,  C09J151/10 ,  C09K2200/0247 ,  C09K2200/0625 ,  C08F230/08 ,  C08F220/26

摘要： An object of the present invention is to provide a curable composition excellent in on-site formability, excellent in heat resistance, chemical resistance and oil resistance, and low in compression set. The invention relates to a curable composition comprising (a) a vinyl-based polymer containing at least one (meth)acryloyl group in a molecule thereof and having a number average molecular weight of 500 to 1,000,000, (b) an ethylenic unsaturated group-containing compound, (c) a thixotropic property-imparting agent, (d) fumed silica surface-treated with a (meth)acryloyl group-containing silane and (e) a photopolymerization initiator.

摘要翻译： 本发明的目的是提供现场成型性优异，耐热性，耐化学性，耐油性优异，压缩变形性低的固化性组合物。 本发明涉及一种可固化组合物，其包含（a）在其分子中含有至少一个（甲基）丙烯酰基的乙烯基类聚合物，其数均分子量为500〜1,000,000，（b）含烯属不饱和基团 化合物，（c）触变性赋予剂，（d）用（甲基）丙烯酰基的硅烷表面处理的热解法二氧化硅和（e）光聚合引发剂。

公开(公告)号：US20090015552A1

公开(公告)日：2009-01-15

申请号：US12156246

申请日：2008-05-30

申请人： Kenichi Kawasaki ,  Masayuki Tanaka

发明人： Kenichi Kawasaki ,  Masayuki Tanaka

IPC分类号： G06F3/033

CPC分类号： G06F3/0346

摘要： An operation system used for operating a pointer on a display screen includes a first transmitting section, a first receiving section, a measuring section, and an outputting section. The first transmitting section transmits radio waves of a millimeter band. The first receiving section receives the radio waves transmitted from the first transmitting section, a distance between the first transmitting section and the first receiving section being changeable. The measuring section measures an amplitude of the radio waves received by the first receiving section. The outputting section outputs an operation signal for executing an operation of the pointer on the display screen in a depth direction in accordance with a change of the amplitude of the radio waves measured by the measuring section.

摘要翻译： 用于在显示屏幕上操作指针的操作系统包括第一发送部分，第一接收部分，测量部分和输出部分。 第一发送部发送毫米波段的无线电波。 第一接收部分接收从第一发送部分发送的无线电波，第一发送部分和第一接收部分之间的距离是可变的。 测量部分测量由第一接收部分接收的无线电波的幅度。 输出部根据由测量部测量的无线电波的振幅的变化，在深度方向上输出用于执行指示器的操作的操作信号。

公开(公告)号：US20080197403A1

公开(公告)日：2008-08-21

申请号：US12026942

申请日：2008-02-06

申请人： Yoshio OZAWA ,  Akihito Yamamoto ,  Katsuaki Natori ,  Masayuki Tanaka ,  Katsuyuki Sekine ,  Daisuke Nishida ,  Ryota Fujitsuka

发明人： Yoshio OZAWA ,  Akihito Yamamoto ,  Katsuaki Natori ,  Masayuki Tanaka ,  Katsuyuki Sekine ,  Daisuke Nishida ,  Ryota Fujitsuka

IPC分类号： H01L27/115

CPC分类号： H01L21/28273 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/512 ,  H01L29/513 ,  H01L29/66825 ,  H01L29/7881

摘要： A semiconductor device includes a semiconductor substrate, and nonvolatile memory cells, each of the cells including a channel region having a channel length and a channel width, a tunnel insulating film, a floating gate electrode, a control gate electrode, an inter-electrode insulating film between the floating and control gate electrodes, and an electrode side-wall insulating film on side-wall surfaces of the floating and control gate electrodes, the electrode side-wall insulating film including first and second insulating films having first and second dielectric constants, the first dielectric constant being higher than the second dielectric constant, the second dielectric constant being higher than a dielectric constant of a silicon nitride film, the first insulating film being in a central region of a facing region between the floating and control gate electrodes, the second insulating region being in the both end regions of the facing region and protruding from the both end portions.

摘要翻译： 半导体器件包括半导体衬底和非易失性存储单元，每个单元包括具有沟道长度和沟道宽度的沟道区，隧道绝缘膜，浮栅电极，控制栅电极，电极间绝缘 在浮置控制栅电极和控制栅极电极的侧壁表面之间的电极侧壁绝缘膜，电极侧壁绝缘膜包括具有第一和第二介电常数的第一和第二绝缘膜， 所述第一介电常数高于所述第二介电常数，所述第二介电常数高于氮化硅膜的介电常数，所述第一绝缘膜位于所述浮动栅极和控制栅电极之间的面对区域的中心区域中， 第二绝缘区域位于面对区域的两端区域中并从两端口突出 ons。