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公开(公告)号：US06583871B1
公开(公告)日：2003-06-24
申请号：US09911238
申请日：2001-07-23
IPC分类号： G01N2100
CPC分类号： G01N21/956 , G01N21/9501
摘要： A system adapted to provide in-situ detection of closed area defects and a method for the same is provided. The system comprises a light source for directing light on to a wafer having a grating pattern etched thereon; a light detector for collecting the light reflected from the wafer; a processor operatively coupled to the light detector for converting the collected light into data associated with the grating pattern and determining the presence of the closed area defect; and a controller operatively coupled to the processor for determining whether the wafer requires additional processing to repair the closed area defect.
摘要翻译： 提供一种适于提供闭合区域缺陷的原位检测的系统及其方法。 该系统包括用于将光引导到具有蚀刻在其上的光栅图案的晶片的光源; 用于收集从晶片反射的光的光检测器; 处理器，其可操作地耦合到所述光检测器，用于将所收集的光转换成与所述光栅图案相关联的数据，并确定所述封闭区域缺陷的存在; 以及可操作地耦合到所述处理器的控制器，用于确定所述晶片是否需要额外的处理以修复所述封闭区域缺陷。
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公开(公告)号：US06579651B2
公开(公告)日：2003-06-17
申请号：US10175923
申请日：2002-06-20
IPC分类号： G03F900
CPC分类号： G03F1/70 , G03F7/70433 , G03F7/70441
摘要： The present invention relates to a system and method of modifying mask layout data to improve the fidelity of mask manufacture. The system and method include determining the difference between the mask layout design and the mask features as written, and generating sizing corrections. The sizing corrections can be used to modify the mask layout data, and/or stored in a database.
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23.发明授权公开(公告)号：US06190062B1
公开(公告)日：2001-02-20
申请号：US09558492
申请日：2000-04-26
申请人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Bryan K. Choo , Sanjay K. Yedur
发明人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Bryan K. Choo , Sanjay K. Yedur
IPC分类号： G03D1300
CPC分类号： H01J37/28 , H01J2237/2817
摘要： One aspect of the present invention relates to a method of inspecting a patterned substrate using an SEM, involving the steps of evaluating the patterned substrate to determine if charges exist thereon; introducing the patterned substrate having charges thereon into a processing chamber of the SEM; inspecting the patterned resist using an electron beam generated by the SEM; and introducing a cleaner containing ozone into the processing chamber of the SEM. Another aspect of the present invention relates to a system for processing a patterned substrate, containing a charge sensor for determining if charges exist on the patterned substrate and measuring the charges; a means for contacting the patterned substrate with a cleaner containing ozone to reduce the charges thereon; a controller for setting at least one of time of contact between the patterned substrate and the cleaner, temperature of the cleaner, concentration of ozone in the cleaner, and pressure under which contact between the patterned substrate and the cleaner occurs; and a device for inspecting the patterned substrate with an electron beam.
摘要翻译： 本发明的一个方面涉及使用SEM检查图案化衬底的方法，包括以下步骤：评估图案化衬底以确定其中是否存在电荷; 将具有电荷的图案化衬底引入到SEM的处理室中; 使用由SEM产生的电子束检查图案化的抗蚀剂; 并将含有臭氧的清洁剂引入SEM的处理室。 本发明的另一方面涉及一种用于处理图案化衬底的系统，其包含用于确定在图案化衬底上是否存在电荷并测量电荷的电荷传感器; 用于使图案化基底与含有臭氧的清洁剂接触以降低其上的电荷的装置; 用于设置图案化基板和清洁器之间的接触时间中的至少一个的控制器，清洁器的温度，清洁器中的臭氧浓度以及图案化基板和清洁器之间的接触发生的压力; 以及用于用电子束检查图案化衬底的装置。
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公开(公告)号：US06663723B1
公开(公告)日：2003-12-16
申请号：US09974276
申请日：2001-10-10
IPC分类号： B08B500
摘要： One aspect of the present invention relates to a method of cleaning a patterned photoresist clad structure involving the steps of contacting the patterned photoresist clad structure with an alcohol vapor comprising at least one compound having the Formula ROH, wherein R is a hydrocarbon group comprising from 4 to about 8 carbon atoms; condensing the alcohol vapor on the patterned photoresist clad structure; and removing the condensed alcohol vapor from the patterned photoresist clad structure. Another aspect of the present invention involves the use of an alcohol vapor having a boiling point from about 102° C. to about 175° C. Yet another aspect of the present invention involves the use of an alcohol vapor having a flash point from about 15° C. to about 80° C.
摘要翻译： 本发明的一个方面涉及一种清洁图案化光致抗蚀剂包覆结构的方法，该方法包括以下步骤：使图案化的光致抗蚀剂包覆结构与包含至少一种具有式ROH的化合物的醇蒸气接触，其中R是包含4 至约8个碳原子; 在图案化的光致抗蚀剂包层结构上冷凝酒精蒸气; 并从图案化的光致抗蚀剂包覆结构去除冷凝的醇蒸气。 本发明的另一方面涉及使用沸点为约102℃至约175℃的醇蒸气。本发明的另一方面涉及使用闪点为约15℃的醇蒸汽 ℃至约80℃
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公开(公告)号：US06634805B1
公开(公告)日：2003-10-21
申请号：US09974340
申请日：2001-10-10
申请人： Michael K. Templeton , Khoi A. Phan , Bharath Rangarajan , Bryan K. Choo , Ramkumar Subramanian
发明人： Michael K. Templeton , Khoi A. Phan , Bharath Rangarajan , Bryan K. Choo , Ramkumar Subramanian
IPC分类号： G03B500
CPC分类号： H01L21/6715 , G03F7/3021
摘要： A system and method is provided for applying a developer to a photoresist material wafer disposed on a semiconductor substrate. The developer system and method employ a developer plate having a plurality of a apertures for dispensing developer. Preferably, the developer plate has a bottom surface with a shape that is similar to the wafer. The developer plate is disposed above the wafer and substantially and/or completely surrounds the top surface of the wafer during application of the developer. A small gap is formed between the wafer and the bottom surface of the developer plate. The wafer and the developer plate form a parallel plate pair, such that the gap can be made small enough so that the developer fluid quickly fills the gap. The developer plate is disposed in very close proximity with respect to the wafer, such that the developer is squeezed between the two plates thereby spreading evenly the developer over the wafer.
摘要翻译： 提供了一种将显影剂施加到设置在半导体衬底上的光致抗蚀剂材料晶片的系统和方法。 显影剂系统和方法采用具有多个用于分配显影剂的孔的显影剂板。 优选地，显影剂板具有与晶片类似的形状的底表面。 显影剂板设置在晶片上方并且在施加显影剂的过程中基本上和/或完全地包围晶片的顶表面。 在晶片和显影剂板的底表面之间形成小的间隙。 晶片和显影剂板形成平行板对，使得间隙可以制得足够小，使得显影剂流体快速填充间隙。 显影剂板相对于晶片非常接近地设置，使得显影剂被挤压在两个板之间，从而将显影剂均匀地铺展在晶片上。
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公开(公告)号：US07295288B1
公开(公告)日：2007-11-13
申请号：US11000869
申请日：2004-12-01
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： Systems and methodologies are provided that account for surface variations of a wafer by adjusting grating features of an imprint lithography mask. Such adjustment employs piezoelectric elements as part of the mask, which can change dimensions (e.g., a height change) and/or move when subjected to an electric voltage. Accordingly, by regulating the amount of electric voltage applied to the piezoelectric elements a controlled expansion for such elements can be obtained, to accommodate for topography variations of the wafer surface.
摘要翻译： 提供了通过调节压印光刻掩模的光栅特征来考虑晶片的表面变化的系统和方法。 这种调节使用压电元件作为掩模的一部分，其可以在经受电压时改变尺寸（例如，高度变化）和/或移动。 因此，通过调节施加到压电元件的电压量，可以获得这些元件的受控膨胀，以适应晶片表面的形貌变化。
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公开(公告)号：US07158896B1
公开(公告)日：2007-01-02
申请号：US10978604
申请日：2004-11-01
申请人： Bhanwar Singh , Srikanteswara Dakshina-Murthy , Khoi A. Phan , Ramkumar Subramanian , Bharath Rangarajan , Iraj Emami
发明人： Bhanwar Singh , Srikanteswara Dakshina-Murthy , Khoi A. Phan , Ramkumar Subramanian , Bharath Rangarajan , Iraj Emami
IPC分类号： G06F19/00
CPC分类号： G03F7/70916 , G03F7/2041 , G03F7/70341
摘要： Systems and/or methods are disclosed for measuring and/or controlling an amount of impurity that is dissolved within an immersion medium employed with immersion lithography. The impurity can be photoresist from a photoresist layer coated upon a substrate surface. A known grating structure is built upon the substrate. A real time immersion medium monitoring component facilitates measuring and/or controlling the amount of impurities dissolved within the immersion medium by utilizing light scattered from the known grating structure.
摘要翻译： 公开了用于测量和/或控制溶解在浸入式光刻中使用的浸渍介质中的杂质量的系统和/或方法。 杂质可以是来自涂覆在基材表面上的光致抗蚀剂层的光致抗蚀剂。 已知的光栅结构被构建在衬底上。 实时浸没介质监测部件通过利用从已知光栅结构散射的光来便于测量和/或控制溶解在浸没介质中的杂质的量。
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28.发明授权Using scatterometry to detect and control undercut for ARC with developable BARCs 失效使用散射法检测和控制ARC的可切割BARC的底切公开(公告)号：US06972201B1
公开(公告)日：2005-12-06
申请号：US10755794
申请日：2004-01-12
CPC分类号： G03F7/3028 , G03F7/091 , G03F7/38 , H01L21/0276 , H01L22/12
摘要： Architecture for monitoring a bottom anti-reflective coating (BARC) undercut and residual portions thereof during a development stage using scatterometry. The scatterometry system monitors for BARC undercut and residual BARC material, and if detected, controls the process to minimize such effects in subsequent wafers. If one or more of such effects has exceeded a predetermined limit, the wafer is rerouted for further processing, which can include rework, etch back of the affected layer, or rejection of the wafer, for example.
摘要翻译： 用于在使用散射测量的显影阶段期间监测底部抗反射涂层（BARC）底切及其残余部分的结构。 散射测量系统监测BARC底切和残留BARC材料，如果检测到，则控制该过程以使后续晶片中的这种影响最小化。 如果这种效应中的一个或多个已经超过预定限制，则晶片被重新路由以用于进一步处理，例如，其可以包括返工，受影响层的回蚀或晶片的拒绝。
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公开(公告)号：US06741445B1
公开(公告)日：2004-05-25
申请号：US10050458
申请日：2002-01-16
IPC分类号： H01T2300
CPC分类号： H01L21/67253
摘要： A system and methodology is provided for monitoring and controlling static charge during wafer and mask fabrication. The static charge on a target device is monitored. If the static charge becomes too high, corrective actions are taken to reduce the static charge. An antistatic solution is dispensed on the target device. The system and methodology provided reduce damage resulting from electrostatic discharge during fabrication. The system and methodology also reduce delays during fabrication by automatically controlling static charge without the need for manual intervention.
摘要翻译： 提供了一种用于在晶片和掩模制造期间监测和控制静电荷的系统和方法。 监视目标设备上的静电荷。 如果静电荷过高，则采取纠正措施减少静电。 抗静电溶液分配在目标装置上。 所提供的系统和方法减少了制造过程中静电放电造成的损坏。 该系统和方法还通过自动控制静电而减少制造过程中的延迟，而无需人工干预。
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30.发明授权Sensor to predict void free films using various grating structures and characterize fill performance 失效传感器预测使用各种光栅结构的无空隙膜，并表征填充性能公开(公告)号：US06684172B1
公开(公告)日：2004-01-27
申请号：US10034165
申请日：2001-12-27
申请人： Ramkumar Subramanian , Steven C. Avanzino , Christopher F. Lyons , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Cyrus E. Tabery
发明人： Ramkumar Subramanian , Steven C. Avanzino , Christopher F. Lyons , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Cyrus E. Tabery
IPC分类号： G01L2500
CPC分类号： C23C16/52 , C23C14/547 , C23C18/1675 , C25D21/12 , H01L21/76877
摘要： One aspect of the invention relates to a metal fill process and systems therefor involving providing a standard calibration wafer having a plurality of fill features of known dimensions in a metalization tool; depositing a metal material over the standard calibration wafer; monitoring the deposition of metal material using a sensor system, the sensor system operable to measure one or more fill process parameters and to generate fill process data; controlling the deposition of metal material to minimize void formation using a control system wherein the control system receives fill process data from the sensor system and analyzes the fill process data to generate a feed-forward control data operative to control the metalization tool; and depositing metal material over a production wafer in the metalization tool using the fill process data generated by the sensor system and the control system. The invention further relates to tool characterization processes and systems therefor.
摘要翻译： 本发明的一个方面涉及一种金属填充方法及其系统，其涉及在金属化工具中提供具有已知尺寸的多个填充特征的标准校准晶片; 在标准校准晶片上沉积金属材料; 使用传感器系统监测金属材料的沉积，所述传感器系统可操作以测量一个或多个填充过程参数并产生填充过程数据; 控制金属材料的沉积以最小化使用控制系统的空隙形成，其中控制系统从传感器系统接收填充过程数据并分析填充过程数据以产生可操作以控制金属化工具的前馈控制数据; 以及使用由传感器系统和控制系统产生的填充过程数据在金属化工具中的生产晶片上沉积金属材料。 本发明还涉及其工具表征过程及其系统。
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