公开(公告)号：US09783891B2

公开(公告)日：2017-10-10

申请号：US15127036

申请日：2015-03-17

申请人： Atotech Deutschland GmbH

发明人： Jacob Blickensderfer ,  Rohan Akolkar ,  Paige Altemare ,  Kay-Oliver Thiel ,  Hans-Jürgen Schreier

IPC分类号： C23C18/50 ,  C23C18/16

CPC分类号： C23C18/50 ,  C23C18/1633 ,  C23C18/1675 ,  C23C18/1682

摘要： An aqueous plating bath for the electroless deposition of iron boron alloy coatings, characterized in that it comprises at least one iron ion source, at least one boron based reducing agent, at least one complexing agent, at least one pH buffer and at least one base wherein its pH value is 11 or higher and the molar ratio of the boron based reducing agents in relation to the iron ions in the aqueous plating bath is at least 6:1. Also, a process for the use of said aqueous plating bath is disclosed. The aqueous plating bath according to the invention shows good stability and plating rate and yields glossy and homogeneous iron boron alloy coatings on various substrates. It is an advantage of the plating bath that it does not require any sacrificial anodes.

公开(公告)号：US20170260631A1

公开(公告)日：2017-09-14

申请号：US15604972

申请日：2017-05-25

申请人： Eastman Kodak Company

发明人： Gary P. Wainwright ,  Shawn A. Reuter

IPC分类号： C23C18/16

CPC分类号： C23C18/1862 ,  C23C18/1619 ,  C23C18/1628 ,  C23C18/1669 ,  C23C18/1675 ,  C23C18/1683 ,  C23C18/32 ,  C23C18/38 ,  C23C18/42

摘要： A roll-to-roll electroless plating system including a reservoir containing a plating solution. A web advance system advances a web of substrate though the plating solution in the reservoir along a web advance direction, wherein a plating substance in the plating solution is plated onto predetermined locations on a surface of the web of substrate. A pump circulates plating solution from an output of the reservoir to an inlet of the reservoir located below the web of substrate. A spreader duct includes a channel that is in fluidic communication with the inlet of the reservoir, wherein the channel is positioned below the web of substrate and includes at least one outlet disposed beyond the first edge or the second edge of the web of substrate and has no outlets disposed immediately below the web of substrate.

公开(公告)号：US09745863B2

公开(公告)日：2017-08-29

申请号：US14417719

申请日：2013-11-26

申请人： MITSUBISHI HEAVY INDUSTRIES COMPRESSOR CORPORATION

发明人： Yusuke Ishibashi ,  Yuya Konno ,  Yujiro Watanabe ,  Toyoaki Yasui ,  Kazunari Tanaka ,  Kosei Kawahara ,  Yohei Fuchigami ,  Toshio Nishina

IPC分类号： F01D25/00 ,  F01D25/24 ,  F04D29/02 ,  F04D29/42 ,  C23C18/16 ,  C23C18/18 ,  F04D17/12 ,  C23C18/44 ,  C23C18/32

CPC分类号： F01D25/24 ,  C23C18/1605 ,  C23C18/1616 ,  C23C18/1619 ,  C23C18/1633 ,  C23C18/1675 ,  C23C18/1678 ,  C23C18/1692 ,  C23C18/18 ,  C23C18/1817 ,  C23C18/32 ,  C23C18/44 ,  F01D25/005 ,  F04D17/122 ,  F04D29/023 ,  F04D29/4206 ,  F05D2230/90 ,  Y10T29/49323

摘要： Provided is a method of manufacturing a rotary machine, which includes: a casing forming process of forming a casing of the rotary machine that has multiple opening parts and suctions and discharges a fluid; a surface activating process of supplying a pretreatment liquid into the casing, then discharging the pretreatment liquid from the casing through the opening parts, and activating an inner surface of the casing after the casing forming process; a plating process of performing supply and discharge of a plating liquid into and from the easing through the opening parts to circulate the plating liquid and plating the inner surface of the casing after the surface activating process; and an assembling process of providing a rotating body that is rotatable relative to the casing so as to he covered from an outer circumference side by the casing plated in the plating process.

公开(公告)号：US09725810B2

公开(公告)日：2017-08-08

申请号：US14129743

申请日：2012-06-20

申请人： Nobutaka Mizutani ,  Takashi Tanaka ,  Mitsuaki Iwashita

发明人： Nobutaka Mizutani ,  Takashi Tanaka ,  Mitsuaki Iwashita

IPC分类号： C23C18/16

CPC分类号： C23C18/1689 ,  C23C18/1619 ,  C23C18/1669 ,  C23C18/1675 ,  C23C18/1676

摘要： A liquid displacement is performed by supplying a plating liquid onto a substrate 2 while rotating the substrate 2 at a first rotational speed in a state that a pre-treatment liquid remains on a surface of the substrate 2 (liquid displacement process (block S305)). Then, an initial film is formed on the substrate 2 by stopping the rotation of the substrate 2 or by rotating the substrate 2 at a second rotational speed while continuously supplying the plating liquid onto the substrate 2 (incubation process (block S306)). Thereafter, a plating film is grown by rotating the substrate 2 at a third rotational speed while continuously supplying the plating liquid onto the substrate 2 (plating film growing process (block S307)). Here, the first rotational speed is higher than the third rotational speed, and the third rotational speed is higher than the second rotational speed.

公开(公告)号：US20170175285A1

公开(公告)日：2017-06-22

申请号：US15450873

申请日：2017-03-06

申请人： EBARA CORPORATION

发明人： Yoshio MINAMI ,  Ryuya KOIZUMI

IPC分类号： C25D17/00 ,  H01L23/00 ,  C25D17/06

CPC分类号： C25D17/001 ,  C23C18/1628 ,  C23C18/163 ,  C23C18/1632 ,  C23C18/1675 ,  C25D17/06 ,  C25D21/12 ,  H01L21/6723 ,  H01L21/67751 ,  H01L21/68721 ,  H01L24/743 ,  H01L24/83 ,  H01L2924/0002 ,  H01L2924/00

摘要： A plating apparatus is described. The apparatus includes: a substrate holder configured to hold a substrate in a vertical position; at least one processing bath configured to process the substrate held by the substrate holder; a transporter configured to grip and horizontally transport the substrate holder; at least one lifter configured to receive the substrate holder from the transporter, lower the substrate holder to place the substrate holder in the processing bath, elevate the substrate holder from the processing bath after processing of the substrate, and transfer the substrate holder to the transporter; and a controller configured to control operations of the transporter and the lifter.

公开(公告)号：US20170170080A1

公开(公告)日：2017-06-15

申请号：US14968401

申请日：2015-12-14

申请人： Intel Corporation

发明人： Darko Grujicic ,  Nilanjan Ghosh ,  Marcel A. Wall ,  Deepak Goyal

IPC分类号： H01L21/66 ,  H01L21/288 ,  H01L21/285 ,  C23C14/54 ,  H01L21/67 ,  C23C18/16 ,  C23C14/34 ,  H01L21/48 ,  H01L21/3213

CPC分类号： H01L22/26 ,  C23C14/34 ,  C23C14/542 ,  C23C18/1633 ,  C23C18/1671 ,  C23C18/1675 ,  C23C18/38 ,  H01L21/4814 ,  H01L21/4846 ,  H01L21/67253 ,  H01L22/14

摘要： A material thickness adjustment device and associated methods are shown. Material thickness adjustment devices and methods shown include eddy current measurement to determine material thickness during a deposition or removal operation. Feedback from the measured thickness may then be applied to adjust one or more processing parameters to meet a desired thickness.

公开(公告)号：US20170053728A1

公开(公告)日：2017-02-23

申请号：US15229975

申请日：2016-08-05

申请人： Teledyne Scientific & Imaging, LLC

发明人： Vivek Mehrotra ,  Rahul Ganguli ,  Jennifer Kuo ,  Payam Minoofar ,  Robert Mihailovich

IPC分类号： H01F27/245 ,  H01L49/02 ,  H01F41/02 ,  H01F27/28 ,  H01F41/32

CPC分类号： H01F27/245 ,  C22C19/03 ,  C22C19/07 ,  C23C18/1653 ,  C23C18/1675 ,  C25D3/562 ,  C25D5/10 ,  C25D5/54 ,  C25D7/00 ,  C25D7/001 ,  H01F27/25 ,  H01F27/28 ,  H01F41/02 ,  H01F41/0213 ,  H01F41/0233 ,  H01F41/24 ,  H01L28/10

摘要： A micro fabricated electromagnetic device and method for fabricating its component structures, the device having a layered magnetic core of a potentially unlimited number of alternating insulating and magnetic layers depending upon application, physical property and performance characteristic requirements for the device. Methods for fabricating the high performing device permit cost effective, high production rates of the device and its component structures without any degradation in device performance resulting from component layering.

摘要翻译： 一种用于制造其组件结构的微制造的电磁装置和方法，该装置具有根据装置的应用，物理性能和性能特征要求的潜在无限数量的交替绝缘和磁层的分层磁芯。 用于制造高性能器件的方法允许器件及其部件结构的成本有效的高生产率，而不会由于部件分层而导致器件性能的任何降低。

公开(公告)号：US20160047050A1

公开(公告)日：2016-02-18

申请号：US14828804

申请日：2015-08-18

申请人： Zhenmeng Peng

发明人： Zhenmeng Peng

IPC分类号： C23C18/16 ,  C23C18/44

CPC分类号： C23C18/166 ,  C23C18/1635 ,  C23C18/1637 ,  C23C18/1651 ,  C23C18/1662 ,  C23C18/1675 ,  C23C18/1831 ,  C23C18/54

摘要： A method of depositing at least one metal skin layer on a metal nanoparticle core is disclosed. The first step of the method is selecting a metal to deposit. Then, the metal nanoparticle core is dispersed in an electrolyte solvent to form a liquid mixture. Next, a hydrogen containing gas is bubbled through the liquid mixture to form a layer of adsorbed hydrogen atoms on the surface of the metal nanoparticle core. Finally, the selected metal is added to the liquid mixture to form a metal skin layer on the metal nanoparticle core.

摘要翻译： 公开了一种在金属纳米颗粒芯上沉积至少一个金属表皮层的方法。 该方法的第一步是选择金属沉积。 然后，将金属纳米颗粒芯分散在电解质溶剂中以形成液体混合物。 接下来，将含氢气体鼓泡通过液体混合物，以在金属纳米颗粒核心的表面上形成吸附的氢原子层。 最后，将所选择的金属添加到液体混合物中，以在金属纳米颗粒芯上形成金属表皮层。

公开(公告)号：US20150191825A1

公开(公告)日：2015-07-09

申请号：US14645366

申请日：2015-03-11

申请人： NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY

发明人： OWEN J. HILDRETH

IPC分类号： C23C18/31 ,  C23C18/16 ,  C23C18/52 ,  H01L21/3205 ,  C23C18/48

CPC分类号： C23C18/1657 ,  B81C1/0038 ,  C23C18/161 ,  C23C18/1651 ,  C23C18/1675 ,  C23C18/1689 ,  C23C18/1692 ,  H01L21/306 ,  H01L21/30604 ,  H01L21/3063 ,  H01L21/3065 ,  H01L21/32051 ,  H01Q1/38 ,  H01Q17/00

摘要： A process for depositing a metal includes disposing a liquid deposition composition on a substrate, the liquid deposition composition including a metal cation; a reducing anion; anda solvent; evaporating the solvent; increasing a concentration of the reducing anion increases in the liquid deposition composition due to evaporating the solvent; performing an oxidation-reduction reaction between the metal cation and the reducing anion in response to increasing the concentration of the reducing anion when the reducing anion is present at a critical concentration; and forming a metal from the metal cation to deposit the metal on the substrate.

摘要翻译： 沉积金属的方法包括将液体沉积组合物设置在基底上，所述液体沉积组合物包括金属阳离子; 还原阴离子 和溶剂; 蒸发溶剂; 由于蒸发溶剂，增加了液体沉积组合物中还原性阴离子的浓度; 当还原阴离子存在于临界浓度时，响应于增加还原性阴离子的浓度，在金属阳离子和还原性阴离子之间进行氧化还原反应; 以及从金属阳离子形成金属以将金属沉积在基底上。

公开(公告)号：US20150165471A1

公开(公告)日：2015-06-18

申请号：US14570266

申请日：2014-12-15

申请人： Tokyo Electron Limited

发明人： Yoshihiro Kawaguchi ,  Satoshi Kaneko

IPC分类号： B05C11/10 ,  B05C3/00 ,  B05C3/02

CPC分类号： B05C11/1002 ,  B05C3/005 ,  B05C3/02 ,  C23C18/1619 ,  C23C18/1632 ,  C23C18/1669 ,  C23C18/1675 ,  C23C18/168 ,  Y10T137/0318 ,  Y10T137/0329

摘要： A substrate processing apparatus includes one or more substrate processing units 11 to 18 each processing a substrate 3 with a processing fluid; processing fluid supply units 19 and 20 supplying the heated processing fluid to the substrate processing units 11 to 18; and a controller 21 controlling the processing fluid supply units 19 and 20. The processing fluid supply units 19 and 20 include a storage tank 35 storing the processing fluid; a heating heat exchanger 51 heating the processing fluid; and a supply path 52 supplying the processing fluid to the substrate processing units 11 to 18. The supply path 52 includes a bypass path 71 bypassing the heating heat exchanger 51 at an upstream of the substrate processing units 11 to 18. The processing fluid heated by the heating heat exchanger 51 and the processing fluid supplied from the bypass path 71 are mixed to be supplied.

摘要翻译： 基板处理装置包括：一个或多个基板处理单元11至18，每个基板处理单元用处理流体处理基板3; 将加热的处理流体供给到基板处理单元11至18的处理流体供应单元19和20; 以及控制处理流体供给单元19和20的控制器21.处理流体供应单元19和20包括存储处理流体的储存箱35; 加热热交换器51，加热处理流体; 以及将处理流体供给到基板处理单元11〜18的供给路径52.供给路径52包括在基板处理单元11〜18的上游旁通加热用热交换器51的旁路路径71.加热流体被加热 加热热交换器51和从旁路通路71供给的处理液被混合供给。