公开(公告)号：US5679962A

公开(公告)日：1997-10-21

申请号：US452090

申请日：1995-05-26

申请人： Hirotaka Kizuki

发明人： Hirotaka Kizuki

IPC分类号： H01L29/06 ,  H01L21/335 ,  H01L29/10 ,  H01L29/12 ,  H01L29/15 ,  H01L29/205 ,  H01L29/66 ,  H01L29/775 ,  H01L31/0328 ,  H01L31/0336

CPC分类号： B82Y10/00 ,  H01L29/1029 ,  H01L29/125 ,  H01L29/127 ,  H01L29/66469 ,  H01L29/775

摘要： A semiconductor device includes a semi-insulating semiconductor substrate, a semiconductor layer structure including at least an undoped layer of a first semiconductor, an undoped spacer layer of a second semiconductor having an electron affinity smaller than that of the first semiconductor, and an n type electron supply layer of the second semiconductor successively laminated on the substrate, the undoped layer having a flat top surface and a flat rear surface on the flat top surface of the undoped spacer layer, having, at a top surface, a concavo-convex periodic structure, and a flat rear surface, the n-type electron supply layer of the second semiconductor having a flat top surface and a rear surface that buries concavities of the concavo-convex structure of the undoped spacer layer, and a plurality of periodically arranged Schottky electrodes on the flat top surface of the n type electron supply layer, arranged in a direction perpendicular to the concavo-convex periodic structure of the undoped spacer layer.

摘要翻译： 半导体器件包括半绝缘半导体衬底，至少包括第一半导体的未掺杂层的半导体层结构，具有小于第一半导体的电子亲和力的第二半导体的未掺杂间隔层，以及n型 所述第二半导体的电子供给层依次层压在所述基板上，所述未掺杂层在所述未掺杂的间隔层的平坦顶面上具有平坦的顶面和平坦的后表面，在顶表面具有凹凸周期性结构 和平坦的后表面，第二半导体的n型电子供给层具有平坦的顶表面和埋入未掺杂间隔层的凹凸结构的凹部的后表面，以及多个周期性布置的肖特基电极 在n型电子供给层的平坦顶表面上，沿垂直于凹凸周期结构o的方向排列 f未掺杂间隔层。

公开(公告)号：US5608749A

公开(公告)日：1997-03-04

申请号：US94223

申请日：1993-07-21

申请人： Hirotaka Kizuki

发明人： Hirotaka Kizuki

IPC分类号： H01L21/288 ,  H01L21/306 ,  H01L23/36 ,  H01S5/00 ,  H01S5/02 ,  H01S5/024 ,  H01S5/042 ,  H01S3/04

CPC分类号： H01S5/024 ,  H01S5/0201 ,  H01S5/0425 ,  H01L2924/0002 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/0207 ,  H01S5/02461 ,  H01S5/1082 ,  H01S5/4031

摘要： A semiconductor laser diode having a selective PHS structure includes a semiconductor substrate having opposite first and second main surfaces, a laser diode structure disposed on the first main surface, and a PHS electrode selectively buried in the second main surface wherein the laser diode structure is located in an area defined by a first pair of parallel lines running in a direction perpendicular to a resonator length direction and a second pair of parallel lines located at the side surfaces of the semiconductor substrate, the first pair of lines being located internally of front and rear facets of the semiconductor substrate, and the PHS electrode has a length in the resonator length direction no shorter than the active region in the resonator length direction. The heat radiating characteristic is improved, especially at the laser beam emitting facet.

摘要翻译： 具有选择性PHS结构的半导体激光二极管包括具有相反的第一和第二主表面的半导体衬底，设置在第一主表面上的激光二极管结构和选择性地埋在第二主表面中的PHS电极，其中激光二极管结构位于 在由沿着与谐振器长度方向垂直的方向上延伸的第一对平行线和位于半导体衬底的侧表面处的第二对平行线限定的区域中，第一对线线位于前后方向内侧 半导体衬底的小平面和PHS电极的谐振器长度方向上的长度不小于谐振器长度方向上的有源区。 散热特性得到改善，特别是在激光束发射面上。