摘要:
An organic light-emitting panel includes a data line, a scan line, a voltage applying line, a switching device, an organic light emitting device and a driving device. The voltage applying line satisfies a condition expressed as ¡ a ^ V ( max ) n
摘要:
An organic light-emitting display panel having a storage capacitor comprised of a storage electrode overlapping a power line with a first gate-insulating layer disposed therebetween, wherein the storage capacitor includes a groove portion formed on a lateral side of the power line overlapping the storage electrode so that the overlapping area of the power line and the storage electrode is kept constant, and a method of manufacturing the same.
摘要:
A display device including a plurality of pixels is disclosed. Each of the pixels includes a switching transistor, a plurality of scanning lines connected to the switching transistors and a plurality of data lines connected to the switching transistors. The scanning lines transmit a gate turn-on voltage that turns on the switching transistors and a gate turn-off voltage that turns off the switching transistors and the data lines transmit a data voltage. The gate turn-on voltage is determined based on a maximum value of the data voltage. The gate turn-on voltage based on the maximum value of the data voltage results in high luminance and less crosstalk phenomenon.
摘要:
A method of driving a transistor, a driving element using the same, and a display panel and a display apparatus having the driving element are provided. The method for driving a transistor comprises: receiving a bias voltage at a first electrode of a driving transistor; outputting a first signal having a first polarity from a first electrode of a switching transistor to a capacitor and a control electrode of the driving transistor when a select line is activated for driving an organic display element; and outputting a second signal having a second polarity from the first electrode of the switching transistor to the capacitor and the control electrode of the driving transistor when the select line is activated for dissipating a charge in the driving transistor and for deactivating the organic display element.
摘要:
A thin film transistor is provided, which includes: a semiconductor layer including an intrinsic portion; a gate electrode overlapping the intrinsic portion; a gate insulating layer disposed between the semiconductor layer and the gate electrode; and source and drain electrodes that have edges opposing each other with respect to the intrinsic portion of the semiconductor layer and are connected to the semiconductor layer, wherein the intrinsic portion has a curved surface contacting the gate insulating layer.
摘要:
The present invention relates to a thin film transistor array panel, a liquid crystal display, and a manufacturing method of the same. A TFT array for a LCD or an EL display is used as a circuit board for driving the respective pixels in an independent manner. The present invention provides pixel electrodes and contact assistants, which connect expansions of gate lines and data lines to an external circuit, having a structure of double layers including IZO layer and ITO layer. The ITO layer is disposed on the IZO layer. In the present invention, the pixel electrodes are formed to have double layers of IZO layer and ITO layer to avoid wires from getting damage by the ITO etchant and to prevent prove pins from having accumulation of foreign body during the gross test. In the present invention, the contact assistants may only be formed to have double layers of IZO layer and ITO layer to prevent prove pins from having accumulation of foreign body during the gross test. Since the consumption of ITO is reduced, manufacturing cost decreases.
摘要:
An apparatus for providing a driving signal to an organic light emitting diode in an image display device includes gate lines for transferring previous and current gate signals, respectively, in a sequential process for providing the driving signal to the organic light emitting diode, a data line for transferring a data signal for displaying images on the image display device, a first switching transistor including a conduction path for transferring the data signal from the data line in response to the current gate signal; a second switching transistor including a conduction path for transferring a reference signal externally supplied in response to the previous gate signal, a third switching transistor including a conduction path for transferring the data signal provided from the first switching transistor in response to a state of the second switching transistor, and a fourth switching transistor including a conduction path for receiving a bias voltage and generating the driving signal to the organic light emitting diode in response to one of the reference signal from the second switching transistor and the data signal from the third switching transistor. The third and fourth switching transistors have switching characteristics substantially identical to each other.
摘要:
A method of driving a transistor, a driving element using the same, and a display panel and a display apparatus having the driving element are provided. The method for driving a transistor comprises: receiving a bias voltage at a first electrode of a driving transistor; outputting a first signal having a first polarity from a first electrode of a switching transistor to a capacitor and a control electrode of the driving transistor when a select line is activated for driving an organic display element; and outputting a second signal having a second polarity from the first electrode of the switching transistor to the capacitor and the control electrode of the driving transistor when the select line is activated for dissipating a charge in the driving transistor and for deactivating the organic display element.
摘要:
An organic light-emitting panel includes a data line, a scan line, a voltage applying line, a switching device, an organic light emitting device and a driving device. The voltage applying line satisfies a condition expressed as ¡ a ^ V ( max ) n
摘要:
A thin film transistor is provided, which includes: a semiconductor layer including an intrinsic portion; a gate electrode overlapping the intrinsic portion; a gate insulating layer disposed between the semiconductor layer and the gate electrode; and source and drain electrodes that have edges opposing each other with respect to the intrinsic portion of the semiconductor layer and are connected to the semiconductor layer, wherein the intrinsic portion has a curved surface contacting the gate insulating layer.