公开(公告)号：US07507390B2

公开(公告)日：2009-03-24

申请号：US10827479

申请日：2004-04-19

申请人： Hyungsoo Choi

发明人： Hyungsoo Choi

IPC分类号： C01B33/06

CPC分类号： C07F15/065 ,  C23C16/18 ,  C23C16/42 ,  H01L29/665

摘要： Disclosed are organometallic compounds derived from Groups VIIb, VIII, IX, and X metals useful as precursors for the formation of metal containing powders and for the chemical deposition of the metals on substrates, particularly for the chemical vapor deposition of metal films suitable for the manufacture of electronic devices. Methods for their use are also disclosed. The preferred organometallic compounds of the present invention are of the formula (R1)mM(PR23)x, where M is a metal selected from the group consisting of manganese, technetium, rhenium, iron, cobalt, nickel, ruthenium, rhodium, palladium, osmium iridium and platinum wherein m is 0, 1, 2, 3 or 4; x is 2, 3, 4 or 5 and m+x are 2, 3, 4, 5, 6, 7 or 8, m and x selected according to each metals appropriate valence; each R1 is independently selected from the group consisting of hydrogen, deuterium, N2, H2, D2 and a variety of substituted alkyl groups; each R2 is independently selected from the group consisting of lower alkyl, aryl, arylalkyl, and alkyl-Z, aryl-Z and arylalkyl-Z where Z is selected from the group consisting of oxy, silyl, siloxy, oxysilyl, siloxy, oxysiloxy, silyalkyl, oxysilylalkyl, siloxyalkyl, oxysiloxyalkyl, silylalkoxy, silylalkoxy, siloxyalkoxy and oxysiloxyalkoxy; and wherein when M is cobalt and one group R1 is selected to be N2, then m is 2 and the second group R1 is hydrogen or deuterium.

公开(公告)号：US07344753B2

公开(公告)日：2008-03-18

申请号：US10664431

申请日：2003-09-19

申请人： Hyungsoo Choi

发明人： Hyungsoo Choi

IPC分类号： C23C16/00

CPC分类号： C30B25/02 ,  B82Y30/00 ,  C30B29/02 ,  C30B29/605 ,  Y10T428/12993 ,  Y10T428/24917 ,  Y10T428/26

摘要： One embodiment includes noncatalytically forming a nanowire on a substrate from an organometallic vapor without application of any type of reduction agent. The nanowire is grown during this formation in a direction away from the substrate and is freestanding during growth. The nanowire has a first dimension of 500 nanometers or less and a second dimension extending from the substrate to a free end of the nanowire at least 10 times greater than the first dimension. In one form, the organometallic vapor includes copper and the nanowire essentially consists of elemental copper, a copper alloy, or oxide of copper. Alternatively or additionally, the nanowire is of a monocrystalline structure.

摘要翻译： 一个实施方案包括在不使用任何类型的还原剂的情况下从有机金属蒸气在基材上非催化形成纳米线。 纳米线在这种形成过程中沿远离基底的方向生长，并且在生长期间是独立的。 纳米线具有500纳米或更小的第一尺寸和从基底延伸到纳米线的自由端的第二尺寸比第一尺寸大至少10倍。 在一种形式中，有机金属蒸汽包括铜，并且纳米线基本上由元素铜，铜合金或铜的氧化物组成。 或者或另外，纳米线是单晶结构的。

公开(公告)号：US20050064158A1

公开(公告)日：2005-03-24

申请号：US10664431

申请日：2003-09-19

申请人： Hyungsoo Choi

发明人： Hyungsoo Choi

IPC分类号： B32B3/00 ,  B32B15/00 ,  C23C16/00 ,  C23C16/44 ,  C30B25/02 ,  C30B29/02 ,  C30B29/60 ,  H01L20060101

CPC分类号： C30B25/02 ,  B82Y30/00 ,  C30B29/02 ,  C30B29/605 ,  Y10T428/12993 ,  Y10T428/24917 ,  Y10T428/26

摘要： One embodiment includes non-catalyticly forming a nanowire on a substrate from an organometallic vapor without application of any type of reduction agent. The nanowire is grown during this formation in a direction away from the substrate and is freestanding during growth. The nanowire has a first dimension of 500 nanometers or less and a second dimension extending from the substrate to a free end of the nanowire at least 10 times greater than the first dimension. In one form, the organometallic vapor includes copper and the nanowire essentially consists of elemental copper, a copper alloy, or oxide of copper. Alternatively or additionally, the nanowire is of a monocrystalline structure.

摘要翻译： 一个实施方案包括在不施加任何类型的还原剂的情况下从有机金属蒸气在衬底上非催化形成纳米线。 纳米线在这种形成过程中沿远离基底的方向生长，并且在生长期间是独立的。 纳米线具有500纳米或更小的第一尺寸和从基底延伸到纳米线的自由端的第二尺寸比第一尺寸大至少10倍。 在一种形式中，有机金属蒸汽包括铜，并且纳米线基本上由元素铜，铜合金或铜的氧化物组成。 或者或另外，纳米线是单晶结构的。

公开(公告)号：US06538147B1

公开(公告)日：2003-03-25

申请号：US09744619

申请日：2001-01-25

申请人： Hyungsoo Choi

发明人： Hyungsoo Choi

IPC分类号： C07F108

CPC分类号： C07F9/142 ,  C07F1/005 ,  C07F1/08 ,  C07F7/0803 ,  C23C16/18

摘要： The present invention provides a copper precursor according to the formula (R3COOCR2COR1)Cu+1{L}x, where x is 1, 2 or 3 and L is a neutral ligand. The precursors in the present invention, which are low melting solids or distillable liquids with high volatility and thermal stability, can be vaporized without decomposition and used to deposit high quality copper films. The improved stability of the copper compounds in the present invention enables them to reproducibly produce selective copper films on metallic or electrically conductive surfaces.

摘要翻译： 本发明提供根据式（R3COOCR2COR1）Cu + 1 {L} x的铜前体，其中x为1,2或3，L为中性配体。 作为低熔点固体的本发明的前体，具有高挥发性和热稳定性的可蒸馏液体可以不分解而蒸发并用于沉积高质量的铜膜。 本发明中铜化合物的稳定性提高使得它们能够在金属或导电表面上可再现地制备选择性铜膜。