公开(公告)号：US09012243B2

公开(公告)日：2015-04-21

申请号：US14470544

申请日：2014-08-27

Applicant: Lam Research Corporation

Inventor： Yoshie Kimura ,  Tom Kamp ,  Eric Pape ,  Rohit DeshPande ,  Keith Gaff ,  Gowri Kamarthy

IPC: H01L21/66 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L22/26 ,  H01J37/32724 ,  H01J37/32926 ,  H01J37/32935 ,  H01L21/67069 ,  H01L21/67248 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Exemplary embodiments are directed to controlling CD uniformity of a wafer by controlling trim time on temperature in a plasma processing system. The plasma processing system has a wafer support assembly including a plurality of independently controllable temperature control zones across a chuck and a controller that controls each temperature control zone. The controller receives process control and temperature data associated with at least one wafer previously processed in a plasma chamber of the plasma processing system. The controller also receives critical device parameters of a current wafer to be processed in the plasma chamber. The controller calculates a target trim time and a target temperature profile of the current wafer based on the process control and temperature data of the at least one previously processed wafers and the critical device parameters of the current wafer. The current wafer as subjected to a trimming operation for a duration of the target trim time while controlling temperatures in the temperature control zones to thereby control temperature of each device die location based on the target temperature profile.

Abstract translation: 示例性实施例涉及通过控制等离子体处理系统中的温度调节时间来控制晶片的CD均匀性。 等离子体处理系统具有晶片支撑组件，其包括横跨卡盘的多个可独立控制的温度控制区域和控制每个温度控制区域的控制器。 控制器接收与先前在等离子体处理系统的等离子体室中处理的至少一个晶片相关联的过程控制和温度数据。 控制器还接收等离子体室中要处理的当前晶片的关键器件参数。 控制器基于至少一个先前处理的晶片的过程控制和温度数据以及当前晶片的关键器件参数来计算当前晶片的目标修整时间和目标温度分布。 当前的晶片在控制温度控制区域中的温度的同时进行修整操作，同时控制温度控制区域中的温度，从而基于目标温度分布来控制每个器件管芯位置的温度。

公开(公告)号：US08852964B2

公开(公告)日：2014-10-07

申请号：US13758266

申请日：2013-02-04

Applicant: Lam Research Corporation

Inventor： Yoshie Kimura ,  Tom Kamp ,  Eric Pape ,  Rohit DeshPande ,  Keith Gaff ,  Gowri Kamarthy

IPC: H01L21/00 ,  H01L21/67 ,  H01L21/66

CPC classification number: H01L22/26 ,  H01J37/32724 ,  H01J37/32926 ,  H01J37/32935 ,  H01L21/67069 ,  H01L21/67248 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Exemplary embodiments are directed to controlling CD uniformity of a wafer by controlling trim time on temperature in a plasma processing system. The plasma processing system has a wafer support assembly including a plurality of independently controllable temperature control zones across a chuck and a controller that controls each temperature control zone. The controller receives process control and temperature data associated with at least one wafer previously processed in a plasma chamber of the plasma processing system, and critical device parameters of a current wafer to be processed in the plasma chamber. The controller calculates a target trim time and a target temperature profile of the current wafer based on the process control and temperature data, and the critical device parameters. The current wafer is trimmed during the target trim time while the temperature of each device die location is controlled based on the target temperature profile.

Abstract translation: 示例性实施例涉及通过控制等离子体处理系统中的温度调节时间来控制晶片的CD均匀性。 等离子体处理系统具有晶片支撑组件，其包括横跨卡盘的多个可独立控制的温度控制区域和控制每个温度控制区域的控制器。 控制器接收与先前在等离子体处理系统的等离子体室中处理的至少一个晶片相关联的过程控制和温度数据，以及在等离子体室中待处理的当前晶片的关键器件参数。 控制器基于过程控制和温度数据以及关键设备参数来计算当前晶片的目标修整时间和目标温度分布。 在目标修整时间期间修剪当前晶片，同时基于目标温度分布来控制每个器件管芯位置的温度。

公开(公告)号：US08671878B2

公开(公告)日：2014-03-18

申请号：US13629235

申请日：2012-09-27

Applicant: Lam Research Corporation

Inventor： Qinghua Zhong ,  Sung Cho ,  Gowri Kamarthy ,  Linda Braly

IPC: C23C16/52 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/32

CPC classification number: H01L21/32105 ,  H01L21/02323 ,  H01L21/02326 ,  H01L21/31116 ,  H01L29/6656

Abstract: An apparatus for forming spacers is provided. A plasma processing chamber is provided, comprising a chamber wall, a substrate support, a pressure regulator, an antenna, a bias electrode, a gas inlet, and a gas outlet. A gas source comprises an oxygen gas source and an anisotropic etch gas source. A controller comprises a processor and computer readable media. The computer readable media comprises computer readable code for placing a substrate of the plurality of substrates in a plasma etch chamber, computer readable code for providing a plasma oxidation treatment to form a silicon oxide coating over the spacer layer, computer readable code for sputtering silicon to form silicon oxide with the oxygen plasma, computer readable code for providing an anisotropic main etch, computer readable code for etching the spacer layer, computer readable code for removing the substrate from the plasma etch chamber after etching the spacer layer.

Abstract translation: 提供一种用于形成间隔物的装置。 提供了一种等离子体处理室，其包括室壁，基板支撑件，压力调节器，天线，偏置电极，气体入口和气体出口。 气源包括氧气源和各向异性蚀刻气体源。 控制器包括处理器和计算机可读介质。 计算机可读介质包括用于将多个基板的基板放置在等离子体蚀刻室中的计算机可读代码，用于提供等离子体氧化处理以在间隔层上形成氧化硅涂层的计算机可读代码，用于溅射硅的计算机可读代码 用氧等离子体形成氧化硅，用于提供各向异性主蚀刻的计算机可读代码，用于蚀刻间隔层的计算机可读代码，用于在蚀刻间隔层之后从等离子体蚀刻室移除衬底的计算机可读代码。

公开(公告)号：US20130025785A1

公开(公告)日：2013-01-31

申请号：US13629235

申请日：2012-09-27

Applicant: Lam Research Corporation

Inventor： Qinghua Zhong ,  Sung Cho ,  Gowri Kamarthy ,  Linda Braly

IPC: H01L21/3065

CPC classification number: H01L21/32105 ,  H01L21/02323 ,  H01L21/02326 ,  H01L21/31116 ,  H01L29/6656

Abstract: An apparatus for forming spacers is provided. A plasma processing chamber is provided, comprising a chamber wall, a substrate support, a pressure regulator, an antenna, a bias electrode, a gas inlet, and a gas outlet. A gas source comprises an oxygen gas source and an anisotropic etch gas source. A controller comprises a processor and computer readable media. The computer readable media comprises computer readable code for placing a substrate of the plurality of substrates in a plasma etch chamber, computer readable code for providing a plasma oxidation treatment to form a silicon oxide coating over the spacer layer, computer readable code for sputtering silicon to form silicon oxide with the oxygen plasma, computer readable code for providing an anisotropic main etch, computer readable code for etching the spacer layer, computer readable code for removing the substrate from the plasma etch chamber after etching the spacer layer.

Abstract translation: 提供一种用于形成间隔物的装置。 提供了一种等离子体处理室，其包括室壁，基板支撑件，压力调节器，天线，偏置电极，气体入口和气体出口。 气源包括氧气源和各向异性蚀刻气体源。 控制器包括处理器和计算机可读介质。 计算机可读介质包括用于将多个基板的基板放置在等离子体蚀刻室中的计算机可读代码，用于提供等离子体氧化处理以在间隔层上形成氧化硅涂层的计算机可读代码，用于溅射硅的计算机可读代码 用氧等离子体形成氧化硅，用于提供各向异性主蚀刻的计算机可读代码，用于蚀刻间隔层的计算机可读代码，用于在蚀刻间隔层之后从等离子体蚀刻室移除衬底的计算机可读代码。