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公开(公告)号:US20240012567A1
公开(公告)日:2024-01-11
申请号:US18069255
申请日:2022-12-21
Applicant: MACRONIX INTERNATIONAL CO., LTD.
Inventor: Po-Hao TSENG , Feng-Min LEE , Tian-Cih BO , Ming-Hsiu LEE
IPC: G06F3/06
CPC classification number: G06F3/0614 , G06F3/0659 , G06F3/0673
Abstract: A memory device is provided. The memory device includes channel layers, word lines, memory layers disposed between the channel layers and the word lines, and memory cells defined at cross-points of the channel layers and the word lines. The memory device is configured for performing a first operation for m times and a second operation for n times, and m is equal to or larger than n. In the first operation, a first electric field is produced in a portion of the memory layers. The word lines are configured for producing a second electric field in the second operation in the portion of the memory layers, and a field direction of the second electric field is different from a field direction of the first electric field.
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22.
公开(公告)号:US20230420047A1
公开(公告)日:2023-12-28
申请号:US17846304
申请日:2022-06-22
Applicant: MACRONIX INTERNATIONAL CO., LTD.
Inventor: Po-Hao TSENG , Tian-Cih BO , Feng-Min LEE
IPC: G11C15/04
CPC classification number: G11C15/04
Abstract: A hybrid type content addressable memory for implementing in-memory-search and an operation method thereof are provided. The CAM includes a plurality of CAM strings and at least one sense amplifier circuit. Each of the CAM strings includes a plurality of CAM cells. The CAM cells store a plurality of existing data. The sense amplifier circuit is connected to the CAM strings. A plurality of search data are inputted to the CAM strings. A plurality of cell matching results obtained from the CAM cells in each of the CAM strings are integrated via an AND operation to obtain a string matching result. The string matching results obtained from the CAM strings are integrated via an OR operation.
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公开(公告)号:US20230045495A1
公开(公告)日:2023-02-09
申请号:US17392365
申请日:2021-08-03
Applicant: MACRONIX INTERNATIONAL CO., LTD.
Inventor: Feng-Min LEE , Erh-Kun LAI , Dai-Ying LEE , Yu-Hsuan LIN , Po-Hao TSENG , Ming-Hsiu LEE
Abstract: A memory device includes a stack and a plurality of memory strings. The stack is disposed on the substrate, and the stack includes a plurality of conductive layers and a plurality of insulating layers alternately stacked. The memory strings pass through the stack along a first direction, wherein a first memory string in the memory strings includes a first conductive pillar and a second conductive pillar, a channel layer, and a memory structure. The first conductive pillar and the second conductive pillar respectively extend along the first direction and are separated from each other. The channel layer is disposed between the first conductive pillar and the second conductive pillar. The memory structure surrounds the second conductive pillar, and the memory structure includes a resistive memory material.
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公开(公告)号:US20240378144A1
公开(公告)日:2024-11-14
申请号:US18195540
申请日:2023-05-10
Applicant: MACRONIX INTERNATIONAL CO., LTD.
Inventor: Po-Hao TSENG , Ming-Hsiu LEE , Tian-Cih BO
IPC: G06F12/02
Abstract: A 3D search engine receives searches for application to word lines of a nonvolatile memory array. The engine uses two word lines per bit of information of the searches and two memory devices per bit of stored feature to search against, optionally enabling don't care and/or wildcard encoding. The engine uses respective bit lines of the nonvolatile memory array as respective matching lines for searching. Respective memory strings (e.g., NAND memory strings) of the nonvolatile memory array are usable to store respective data words, e.g., corresponding to features to search for. Respective pluralities of the memory strings are coupled in parallel to respective shared bit lines. Various encodings of features and searches enable exact, approximate, and range matching. The engine has applicability to comparing and sorting, in addition to searching in application areas such as artificial intelligence (AI) and big data.
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25.
公开(公告)号:US20240365541A1
公开(公告)日:2024-10-31
申请号:US18765437
申请日:2024-07-08
Applicant: MACRONIX INTERNATIONAL CO., LTD.
Inventor: Yu-Hsuan LIN , Feng-Min LEE , Po-Hao TSENG
CPC classification number: H10B41/35 , H01L29/40114 , H01L29/66825
Abstract: The application discloses an integrated memory device, a manufacturing method and an operation method thereof. The integrated memory cell includes: a first memory cell; and an embedded second memory cell, serially coupled to the first memory cell, wherein the embedded second memory cell is formed on any one of a first side and a second side of the first memory cell.
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公开(公告)号:US20240221822A1
公开(公告)日:2024-07-04
申请号:US18147015
申请日:2022-12-28
Applicant: MACRONIX INTERNATIONAL CO., LTD.
Inventor: Po-Hao TSENG , Feng-Min LEE
IPC: G11C11/4091
CPC classification number: G11C11/4091
Abstract: A memory cell and a memory device are provided. The memory cell comprises: a write transistor; and a read transistor coupled to the write transistor, the write transistor and the read transistor coupled at a storage node, the storage node being for storing data; wherein, at least one among the write transistor and the read transistor includes a threshold voltage adjusting layer, and a threshold voltage of the write transistor and/or the read transistor is adjustable.
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27.
公开(公告)号:US20230395148A1
公开(公告)日:2023-12-07
申请号:US17830427
申请日:2022-06-02
Applicant: MACRONIX INTERNATIONAL CO., LTD.
Inventor: Po-Hao TSENG
IPC: G11C15/04
CPC classification number: G11C15/04
Abstract: Provided are an analog content addressable memory (CAM) device, an analog CAM cell and a method for data searching and comparing thereof. The CAM cell includes: a first memory cell and a second memory cell coupled to each other, wherein the analog CAM cell stores analog storage data which is corresponding to a match range, the match range is determined based on first and second threshold voltages of the analog CAM cell; an analog search data is converted into first and second analog search voltages: the first and the second memory cells receive the first and the second analog search voltages; and the analog CAM memory cell generates a memory cell current, or the analog CAM memory cell keeps or discharges a match line voltage on a match line coupled to the analog CAM memory cell.
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28.
公开(公告)号:US20230352087A1
公开(公告)日:2023-11-02
申请号:US17730259
申请日:2022-04-27
Applicant: MACRONIX INTERNATIONAL CO., LTD.
Inventor: Po-Hao TSENG
IPC: G11C15/04
CPC classification number: G11C15/046
Abstract: The application provides a content addressable memory (CAM) memory device, a CAM memory cell and a method for searching and comparing data thereof. The CAM memory device includes: a plurality of CAM memory strings; and an electrical characteristic detection circuit. In data searching, a search data is compared with a storage data stored in the CAM memory strings, the CAM memory strings generate a plurality of memory string currents, the electrical characteristic detection circuit detects the memory string currents to generate a plurality of sensing results, or detects a plurality of match line voltages on a plurality of match lines coupled to the CAM memory string to generate the plurality of search results. The storage data and the search data is a range storage data and a single-bit search data, or the storage data and the search data is a single-bit storage data and a range search data.
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29.
公开(公告)号:US20230317166A1
公开(公告)日:2023-10-05
申请号:US17711073
申请日:2022-04-01
Applicant: MACRONIX INTERNATIONAL CO., LTD.
Inventor: Yu-Hsuan LIN , Po-Hao TSENG , Feng-Min LEE
IPC: G11C15/04
CPC classification number: G11C15/046
Abstract: An analog content-address memory (analog CAM) having approximation matching and an operation method thereof are provided. The analog CAM includes an inputting circuit, at least one analog CAM cell and an outputting circuit. The inputting circuit is configured to provide an inputting data. The analog CAM cell is connected to the inputting circuit and receives the inputting data. The analog CAM cell has a mild swing match curve whose highest point corresponds to a stored data. A segment from the highest point of the mild swing match curve to a lowest point of the mild swing match curve corresponds to at least three data values. The outputting circuit is connected to the analog CAM cell and receives a match signal from the analog CAM cell. The outputting circuit outputs a match approximation level according to the match signal.
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公开(公告)号:US20230154535A1
公开(公告)日:2023-05-18
申请号:US18155827
申请日:2023-01-18
Applicant: MACRONIX INTERNATIONAL CO., LTD.
Inventor: Po-Hao TSENG , Feng-Min LEE , Ming-Hsiu LEE
IPC: G11C15/04
CPC classification number: G11C15/04 , G11C15/046 , G11C2211/4016 , G11C16/0475
Abstract: A TCAM comprises a plurality of first search lines, a plurality of second search lines, a plurality of memory cell strings and one or more current sensing units. The memory cell strings comprise a plurality of memory cells. The current sensing units are coupled to the memory cell strings. In a search operation, a determination that whether any of the data stored in the memory cell strings matches a data string to be searched is made according to whether the one or more current sensing units detect current from the memory cell strings, or according to the magnitude of the current flowing out from the memory cell strings detected by the one or more current sensing units. Each memory cell includes a first transistor and a second transistor. Gates of the first and second transistors are coupled to a corresponding first search line and a corresponding second search line.
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