公开(公告)号：US20170331069A1

公开(公告)日：2017-11-16

申请号：US15593677

申请日：2017-05-12

Applicant: Massachusetts Institute of Technology

Inventor： Yi Song ,  Jin-Yong Hong ,  Jing Kong

IPC: H01L51/52 ,  H01L51/44 ,  H01L51/00 ,  H01L51/56

CPC classification number: H01L51/5203 ,  H01L51/0021 ,  H01L51/0045 ,  H01L51/0097 ,  H01L51/442 ,  H01L51/56 ,  Y02E10/549

Abstract: A transfer stamp comprising a nano-film layer is formed on a substantially transparent polymeric substrate, wherein the substantially transparent polymeric substrate comprises an indirect adhesion layer adhered to the nano-film. The nano-film layer of the transfer stamp is applied to a surface of a target substrate; the nano-film layer is positioned between the indirect adhesion layer and the target substrate.

公开(公告)号：US09136488B2

公开(公告)日：2015-09-15

申请号：US13904375

申请日：2013-05-29

Applicant: Massachusetts Institute of Technology

Inventor： Hyesung Park ,  Rachel M. Howden ,  Jing Kong ,  Karen K. Gleason

IPC: H01L29/08 ,  H01L35/24 ,  H01L51/00 ,  H01L51/42 ,  H01L51/50 ,  H01L51/44

CPC classification number: H01L51/4213 ,  H01L51/0008 ,  H01L51/0037 ,  H01L51/0046 ,  H01L51/0056 ,  H01L51/442 ,  H01L51/5004 ,  Y02E10/549

Abstract: The present invention generally relates to devices comprising graphene and a conductive polymer (e.g., poly(3,4-ethylenedioxythiophene) (PEDOT)), and related systems and methods. In some embodiments, the conductive polymer is formed by oxidative chemical vapor deposition.

Abstract translation: 本发明一般涉及包含石墨烯和导电聚合物（例如聚（3,4-亚乙基二氧噻吩）（PEDOT））的装置，以及相关系统和方法。 在一些实施方案中，导电聚合物通过氧化化学气相沉积形成。

公开(公告)号：US20150064471A1

公开(公告)日：2015-03-05

申请号：US14469777

申请日：2014-08-27

Applicant: Massachusetts Institute of Technology

Inventor： Mildred S. Dresselhaus ,  Jing Kong ,  Yi-Hsien Lee ,  Xi Ling

IPC: C23C16/30 ,  C23C14/24 ,  C23C14/18 ,  C23C14/06 ,  C23C14/16 ,  C23C16/56 ,  C23C14/14

CPC classification number: C23C16/305 ,  C23C14/12 ,  C23C14/24 ,  C23C16/01 ,  C23C16/0272 ,  C23C16/4488 ,  Y10T428/30 ,  Y10T428/31678 ,  Y10T428/31938

Abstract: A metal dichalcogenide layer is produced on a transfer substrate by seeding F16CuPc molecules on a surface of a growth substrate, growing a layer (e.g., a monolayer) of a metal dichalcogenide via chemical vapor deposition on the growth substrate surface seeded with F16CuPc molecules, and contacting the F16CuPc-molecule and metal-dichalcogenide coated growth substrate with a composition that releases the metal dichalcogenide from the growth substrate.

Abstract translation: 通过在生长衬底的表面上接种F16CuPc分子，通过化学气相沉积在F16CuPc分子接种的生长衬底表面上生长金属二硫属元素化物层（例如，单层），在转移衬底上产生金属二硫属元素化物质层，以及 使F16CuPc分子和金属二硫属元素化物包被的生长衬底与从生长衬底释放金属二硫属元素的组合物接触。

公开(公告)号：US20140245946A1

公开(公告)日：2014-09-04

申请号：US14193962

申请日：2014-02-28

Applicant: Massachusetts Institute of Technology

Inventor： Jing Kong ,  Lain-Jong Li ,  Yi-Hsien Lee

IPC: C30B25/18

CPC classification number: C30B25/186 ,  B23B9/00 ,  C01B32/20 ,  C23C16/00 ,  C30B29/46 ,  H01L23/58

Abstract: Aromatic molecules are seeded on a surface of a growth substrate; and a layer (e.g., a monolayer) of a metal dichalcogenide is grown via chemical vapor deposition on the growth substrate surface seeded with aromatic molecules. The seeded aromatic molecules are contacted with a solvent that releases the metal dichalcogenide layer from the growth substrate. The metal dichalcogenide layer can be released with an adhered transfer medium and can be deposited on a target substrate.

Abstract translation: 芳族分子接种在生长底物的表面上; 并且通过化学气相沉积在用芳族分子接种的生长衬底表面上生长金属二硫属元素的层（例如，单层）。 接种的芳族分子与从生长基质释放金属二硫属化物层的溶剂接触。 可以用粘附的转印介质释放金属二硫属元素层，并且可以沉积在目标基底上。

公开(公告)号：US20130320302A1

公开(公告)日：2013-12-05

申请号：US13904375

申请日：2013-05-29

Applicant: Massachusetts Institute of Technology

Inventor： Hyesung Park ,  Rachel M. Howden ,  Jing Kong ,  Karen K. Gleason

IPC: H01L51/42 ,  H01L51/50

CPC classification number: H01L51/4213 ,  H01L51/0008 ,  H01L51/0037 ,  H01L51/0046 ,  H01L51/0056 ,  H01L51/442 ,  H01L51/5004 ,  Y02E10/549

Abstract: The present invention generally relates to devices comprising graphene and a conductive polymer (e.g., poly(3,4-ethylenedioxythiophene) (PEDOT)), and related systems and methods. In some embodiments, the conductive polymer is formed by oxidative chemical vapor deposition.

Abstract translation: 本发明一般涉及包含石墨烯和导电聚合物（例如聚（3,4-亚乙基二氧噻吩）（PEDOT））的装置，以及相关系统和方法。 在一些实施方案中，导电聚合物通过氧化化学气相沉积形成。