公开(公告)号：US20150064471A1

公开(公告)日：2015-03-05

申请号：US14469777

申请日：2014-08-27

Applicant: Massachusetts Institute of Technology

Inventor： Mildred S. Dresselhaus ,  Jing Kong ,  Yi-Hsien Lee ,  Xi Ling

IPC: C23C16/30 ,  C23C14/24 ,  C23C14/18 ,  C23C14/06 ,  C23C14/16 ,  C23C16/56 ,  C23C14/14

CPC classification number: C23C16/305 ,  C23C14/12 ,  C23C14/24 ,  C23C16/01 ,  C23C16/0272 ,  C23C16/4488 ,  Y10T428/30 ,  Y10T428/31678 ,  Y10T428/31938

Abstract: A metal dichalcogenide layer is produced on a transfer substrate by seeding F16CuPc molecules on a surface of a growth substrate, growing a layer (e.g., a monolayer) of a metal dichalcogenide via chemical vapor deposition on the growth substrate surface seeded with F16CuPc molecules, and contacting the F16CuPc-molecule and metal-dichalcogenide coated growth substrate with a composition that releases the metal dichalcogenide from the growth substrate.

Abstract translation: 通过在生长衬底的表面上接种F16CuPc分子，通过化学气相沉积在F16CuPc分子接种的生长衬底表面上生长金属二硫属元素化物层（例如，单层），在转移衬底上产生金属二硫属元素化物质层，以及 使F16CuPc分子和金属二硫属元素化物包被的生长衬底与从生长衬底释放金属二硫属元素的组合物接触。

公开(公告)号：US09812525B2

公开(公告)日：2017-11-07

申请号：US15373687

申请日：2016-12-09

Applicant: Massachusetts Institute of Technology

Inventor： Mildred S. Dresselhaus ,  Jing Kong ,  Tomas A. Palacios ,  Xi Ling ,  Yuxuan Lin

IPC: H01L29/06 ,  H01L29/24 ,  H01L21/02

CPC classification number: H01L29/068 ,  H01L21/02112 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02527 ,  H01L21/0254 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/0259 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02645 ,  H01L21/8256 ,  H01L27/0207 ,  H01L27/088 ,  H01L29/0665 ,  H01L29/24 ,  H01L29/267 ,  H01L29/45 ,  H01L29/6603 ,  H01L29/778 ,  H01L29/861

Abstract: A two-dimensional heterostructure is synthesized by producing a patterned first two-dimensional material on a growth substrate. The first two-dimensional material is patterned to define at least one void through which an exposed region of the growth substrate is exposed. Seed molecules are selectively deposited either on the exposed region of the growth substrate or on the patterned first two-dimensional material. A second two-dimensional material that is distinct from the first two-dimensional material is then grown from the deposited seed molecules.

公开(公告)号：US20170170260A1

公开(公告)日：2017-06-15

申请号：US15373687

申请日：2016-12-09

Applicant: Massachusetts Institute of Technology

Inventor： Mildred S. Dresselhaus ,  Jing Kong ,  Tomas A. Palacios ,  Xi Ling ,  Yuxuan Lin

IPC: H01L29/06 ,  H01L21/02 ,  H01L29/24

CPC classification number: H01L29/068 ,  H01L21/02112 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02527 ,  H01L21/0254 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/0259 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02645 ,  H01L21/8256 ,  H01L27/0207 ,  H01L27/088 ,  H01L29/0665 ,  H01L29/24 ,  H01L29/267 ,  H01L29/45 ,  H01L29/6603 ,  H01L29/778 ,  H01L29/861

Abstract: A two-dimensional heterostructure is synthesized by producing a patterned first two-dimensional material on a growth substrate. The first two-dimensional material is patterned to define at least one void through which an exposed region of the growth substrate is exposed. Seed molecules are selectively deposited either on the exposed region of the growth substrate or on the patterned first two-dimensional material. A second two-dimensional material that is distinct from the first two-dimensional material is then grown from the deposited seed molecules.