Miniature fluid actuator
    22.
    发明授权

    公开(公告)号:US11889766B2

    公开(公告)日:2024-01-30

    申请号:US17072642

    申请日:2020-10-16

    CPC classification number: H10N30/2047

    Abstract: A miniature fluid actuator is disclosed and includes a substrate, a chamber layer, a carrying layer and a piezoelectric assembly. The substrate has an inlet. The chamber layer is formed on the substrate and includes a first chamber in communication with the inlet, a resonance layer and a second chamber. The resonance layer has a central aperture in communication between the first chamber and the second chamber. The carrying layer includes a fixed region formed on the chamber layer, a vibration region, a connection portion and a vacant. The vibration region is located at a center of the fixed region and corresponding to the second chamber. The connection portion is connected between the fixed region and the vibration region. The vacant is formed among the fixed region, the vibration region and the connection portion. The piezoelectric assembly is formed on the vibration region.

    Micro-electromechanical systems pump

    公开(公告)号:US11454232B2

    公开(公告)日:2022-09-27

    申请号:US16825100

    申请日:2020-03-20

    Abstract: A micro-electromechanical systems pump includes a first substrate, a first oxide layer, a second substrate, and a piezoelectric element. The first oxide layer is stacked on the first substrate. The second substrate is combined with the first substrate, and the second substrate includes a silicon wafer layer, a second oxide layer, and a silicon material layer. The silicon wafer layer has an actuation portion. The actuation portion is circular and has a maximum stress value and an actuation stress value. The second oxide layer is formed on the silicon wafer layer. The silicon material layer is located at the second oxide layer and is combined with the first oxide layer. The piezoelectric element is stacked on the actuation portion, and has a piezoelectric stress value. The maximum stress value is greater than the actuation stress value, and the actuation stress value is greater than the piezoelectric stress value.

    WAFER STRUCTURE
    24.
    发明申请

    公开(公告)号:US20220134750A1

    公开(公告)日:2022-05-05

    申请号:US17116644

    申请日:2020-12-09

    Abstract: A wafer structure is disclosed and includes a chip substrate and at least one inkjet chip. The chip substrate is a silicon substrate fabricated by a semiconductor process. The inkjet chip is directly formed on the chip substrate by the semiconductor process, whereby the wafer structure is diced, and the inkjet chip is produced, to be implemented for inkjet printing. The inkjet chip includes a plurality of ink-drop generators produced by the semiconductor process and formed on the chip substrate. Each of the ink-drop generators includes a barrier layer, an ink-supply chamber and a nozzle, and the ink-supply chamber and the nozzle are integrally formed in the barrier layer.

    WAFER STRUCTURE
    25.
    发明申请

    公开(公告)号:US20220134749A1

    公开(公告)日:2022-05-05

    申请号:US17116617

    申请日:2020-12-09

    Abstract: A wafer structure is disclosed and includes a chip substrate and at least one inkjet chip. The chip substrate is a silicon substrate fabricated by a semiconductor process on a wafer of at least 12 inches. The inkjet chip is directly formed on the chip substrate by the semiconductor process, whereby the wafer is diced, and the inkjet chip is produced, to be implemented for inkjet printing. The inkjet chip includes plural ink-drop generators produced by the semiconductor process and formed on the chip substrate. The ink-drop generators are arranged in a longitudinal direction to form plural longitudinal axis array groups having a pitch maintained between two adjacent ink-drop generators in the longitudinal direction, and arranged in a horizontal direction to form plural horizontal axis array groups having a central stepped pitch equal to or less than 1/600 inches maintained between two adjacent ink-drop generators in the horizontal direction.

    WAFER STRUCTURE
    26.
    发明申请

    公开(公告)号:US20220134747A1

    公开(公告)日:2022-05-05

    申请号:US17116292

    申请日:2020-12-09

    Abstract: A wafer structure is disclosed and includes a chip substrate and a plurality of inkjet chips. The chip substrate is a silicon substrate which is fabricated by a semiconductor process on a wafer of at least 12 inches. The plurality of inkjet chips include at least one first inkjet chip and at least one second inkjet chip. The plurality of inkjet chips are directly formed on the chip substrate by the semiconductor process, respectively, and diced into the at least one first inkjet chip and the at least one second inkjet chip, to be implemented for inkjet printing. Each of the first inkjet chip and the second inkjet chip includes a plurality of ink-drop generators produced by the semiconductor process and formed on the chip substrate.

    Gas transportation device
    27.
    发明授权

    公开(公告)号:US10975856B2

    公开(公告)日:2021-04-13

    申请号:US16058111

    申请日:2018-08-08

    Abstract: A gas transportation device is provided and includes a plurality of flow guiding units. Each of the flow guiding units includes an inlet plate, a substrate, a resonance plate, an actuating plate, a piezoelectric component, an outlet plate and a valve, which are sequentially stacked. A convergence chamber is formed between the resonance plate and the inlet plate. The actuating plate has a suspension part, an outer frame and a plurality of interspaces. The piezoelectric component is attached on a surface of the suspension part. Gas is inhaled into the convergence chamber via an inlet aperture of the inlet plate, is transported into a first chamber via a central aperture of the resonance plate, is further transported into a second chamber via the interspaces, and is discharged out from an outlet aperture of the outlet plate. The gas is transported by the flow guiding units disposed in a specific arrangement.

    MICRO-ELECTROMECHANICAL SYSTEM PUMP MODULE
    28.
    发明申请

    公开(公告)号:US20200182233A1

    公开(公告)日:2020-06-11

    申请号:US16689755

    申请日:2019-11-20

    Abstract: A MEMS pump module includes a microprocessor and a MEMS chip. The microprocessor outputs a constant voltage and a variable voltage. The MEMS chip includes a chip body, a plurality of MEMS pumps and at least one common electrode. The plurality of MEMS pumps are disposed on the chip body, and each MEMS pump includes a first electrode and a second electrode. The at least one common electrode is disposed on the chip body and electrically connected to the second electrodes of the plurality of MEMS pumps. The microprocessor is electrically connected to the first electrodes of the plurality of MEMS pumps and the at least one common electrode so as to transmit the constant voltage to the at least one common electrode and transmit the variable voltage to the first electrodes of the plurality of MEMS pumps.

    Wafer structure
    29.
    发明授权

    公开(公告)号:US11813863B2

    公开(公告)日:2023-11-14

    申请号:US17468271

    申请日:2021-09-07

    Abstract: A wafer structure is disclosed and includes a chip substrate and at least one inkjet chip having plural ink-drip generators. Each ink-drop generator includes a thermal-barrier layer, a resistance heating layer and a protective layer. The thermal-barrier layer is formed on the chip substrate, the resistance heating layer is formed on the thermal-barrier layer, a part of the protective layer is formed on the resistance heating layer, and the barrier layer is formed on the protective layer. The ink-supply chamber has a bottom in communication with the protective layer, and a top in communication with the nozzle. The thermal-barrier layer has a thickness of 500˜5000 angstroms, the protective layer has a thickness of 150˜3500 angstroms, the resistance heating layer has a thickness of 100˜500 angstroms, the resistance heating layer has a length of 5˜30 microns, and the resistance heating layer has a width of 5˜10 microns.

    Wafer structure
    30.
    发明授权

    公开(公告)号:US11738556B2

    公开(公告)日:2023-08-29

    申请号:US17410779

    申请日:2021-08-24

    Abstract: A wafer structure including a chip substrate and plural inkjet chips is disclosed. The chip substrate is a silicon substrate fabricated by a semiconductor process on a wafer of at least 12 inches. The inkjet chips are formed on the chip substrate by the semiconductor process and diced into the first inkjet chip and the second inkjet chip. Each of the first inkjet chip and the second inkjet chip includes plural ink-drop generators. Each of the ink-drop generators includes a nozzle. A diameter of the nozzle is in a range between 0.5 micrometers and 10 micrometers. A volume of an inkjet drop discharged from the nozzle is in a range between 1 femtoliter and 3 picoliters. The ink-drop generators form plural longitudinal axis array groups having a pitch and form plural horizontal axis array groups having a central stepped pitch equal to 1/600 inches or less.

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