公开(公告)号：US09379315B2

公开(公告)日：2016-06-28

申请号：US13797185

申请日：2013-03-12

Applicant: Micron Technology, Inc.

Inventor： Wei Chen ,  Sunil Murthy ,  Witold Kula

IPC: G11B5/31 ,  H01L43/12 ,  H01L43/08

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Magnetic memory cells, methods of fabrication, semiconductor device structures, and memory systems are disclosed. A magnetic cell core includes at least one magnetic region (e.g., a free region or a fixed region) configured to exhibit a vertical magnetic orientation, at least one oxide-based region, which may be a tunnel junction region or an oxide capping region, and at least one magnetic interface region, which may comprise or consist of iron (Fe). In some embodiments, the magnetic interface region is spaced from at least one oxide-based region by a magnetic region. The presence of the magnetic interface region enhances the perpendicular magnetic anisotropy (PMA) strength of the magnetic cell core. In some embodiments, the PMA strength may be enhanced more than 50% compared to that of the same magnetic cell core structure lacking the magnetic interface region.

Abstract translation: 公开了磁存储单元，制造方法，半导体器件结构和存储器系统。 磁芯芯包括被配置为呈现垂直磁取向的至少一个磁区（例如，自由区或固定区），至少一个氧化物基区域，其可以是隧道结区域或氧化物封盖区域， 和至少一个磁性界面区域，其可以由铁（Fe）构成或由铁构成。 在一些实施例中，磁性界面区域与至少一个基于氧化物的区域相隔一个磁性区域。 磁性界面区域的存在增强了磁性电池芯的垂直磁各向异性（PMA）强度。 在一些实施例中，与缺少磁性界面区域的相同的磁性单元芯结构相比，PMA强度可以提高50％以上。

公开(公告)号：US20160155932A1

公开(公告)日：2016-06-02

申请号：US14558367

申请日：2014-12-02

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Wei Chen ,  Jonathan D. Harms ,  Sunil Murthy

IPC: H01L43/08 ,  H01L27/22 ,  H01L43/12 ,  H01L43/02

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/12

Abstract: A magnetic cell structure comprises a seed material including tantalum, platinum, and ruthenium. The seed material comprises a platinum portion overlying a tantalum portion, and a ruthenium portion overlying the platinum portion. The magnetic cell structure comprises a magnetic region overlying the seed material, an insulating material overlying the magnetic region, and another magnetic region overlying the insulating material. Semiconductor devices including the magnetic cell structure, methods of forming the magnetic cell structure and the semiconductor devices are also disclosed.

Abstract translation: 磁性电池结构包括种子材料，包括钽，铂和钌。 种子材料包括覆盖在钽部分上的铂部分和覆盖铂部分的钌部分。 磁性体结构包括覆盖种子材料的磁性区域，覆盖磁性区域的绝缘材料和覆盖绝缘材料的另一磁性区域。 还公开了包括磁性单元结构的半导体器件，形成磁性单元结构的方法和半导体器件。

公开(公告)号：US10651367B2

公开(公告)日：2020-05-12

申请号：US16202536

申请日：2018-11-28

Applicant: Micron Technology, Inc.

Inventor： Wei Chen ,  Sunil Murthy ,  Witold Kula

IPC: G11B5/31 ,  H01L43/02 ,  H01L43/12 ,  H01L43/08 ,  H01L43/10 ,  G11C11/16

Abstract: Magnetic memory cells, methods of fabrication, semiconductor device structures, and memory systems are disclosed. A magnetic cell core includes at least one magnetic region (e.g., a free region or a fixed region) configured to exhibit a vertical magnetic orientation, at least one oxide-based region, which may be a tunnel junction region or an oxide capping region, and at least one magnetic interface region, which may comprise or consist of iron (Fe). In some embodiments, the magnetic interface region is spaced from at least one oxide-based region by a magnetic region. The presence of the magnetic interface region enhances the perpendicular magnetic anisotropy (PMA) strength of the magnetic cell core. In some embodiments, the PMA strength may be enhanced more than 50% compared to that of the same magnetic cell core structure lacking the magnetic interface region.

公开(公告)号：US09972770B2

公开(公告)日：2018-05-15

申请号：US15194875

申请日：2016-06-28

Applicant: Micron Technology, Inc.

Inventor： Wei Chen ,  Sunil Murthy ,  Witold Kula

IPC: G11B5/31 ,  H01L43/02 ,  H01L43/12 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Magnetic memory cells, methods of fabrication, semiconductor device structures, and memory systems are disclosed. A magnetic cell core includes at least one magnetic region (e.g., a free region or a fixed region) configured to exhibit a vertical magnetic orientation, at least one oxide-based region, which may be a tunnel junction region or an oxide capping region, and at least one magnetic interface region, which may comprise or consist of iron (Fe). In some embodiments, the magnetic interface region is spaced from at least one oxide-based region by a magnetic region. The presence of the magnetic interface region enhances the perpendicular magnetic anisotropy (PMA) strength of the magnetic cell core. In some embodiments, the PMA strength may be enhanced more than 50% compared to that of the same magnetic cell core structure lacking the magnetic interface region.

公开(公告)号：US20170331032A1

公开(公告)日：2017-11-16

申请号：US15588994

申请日：2017-05-08

Applicant: Micron Technology, Inc.

Inventor： Wei Chen ,  Witold Kula ,  Manzar Siddik ,  Suresh Ramarajan ,  Jonathan D. Harms

IPC: H01L43/02 ,  H01L43/10 ,  H01L27/22

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L27/224 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic tunnel junction comprises a conductive first magnetic electrode comprising magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material, and a non-magnetic tunnel insulator material between the first and second electrodes. The magnetic reference material of the second electrode comprises a synthetic antiferromagnetic construction comprising two spaced magnetic regions one of which is closer to the tunnel insulator material than is the other. The one magnetic region comprises a polarizer region comprising CoxFeyBz where “x” is from 0 to 90, “y” is from 10 to 90, and “z” is from 10 to 50. The CoxFeyBz is directly against the tunnel insulator. A non-magnetic region comprising an Os-containing material is between the two spaced magnetic regions. The other magnetic region comprises a magnetic Co-containing material. Other embodiments are disclosed.

公开(公告)号：US20170018705A1

公开(公告)日：2017-01-19

申请号：US14797622

申请日：2015-07-13

Applicant: Micron Technology, Inc.

Inventor： Jonathan D. Harms ,  Wei Chen ,  Sunil S. Murthy

IPC: H01L43/10 ,  H01L43/08 ,  G11C11/16 ,  H01L43/02

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08

Abstract: Some embodiments include a magnetic tunnel junction comprising magnetic reference material having an iridium-containing region between a multi-layer stack and a polarizer region. Some embodiments include a magnetic tunnel junction having a conductive first magnetic electrode which contains magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and which contains magnetic reference material, and a non-magnetic insulator material between the first and second electrodes. The magnetic reference material of the second electrode includes a first region containing a stack of cobalt alternating with one or more of platinum, palladium and nickel; includes an iridium-containing second region over the first region; and includes a cobalt-containing third region over the second region. The third region is directly against the non-magnetic insulator material.

Abstract translation: 一些实施例包括磁隧道结，其包括在多层堆叠和偏振器区域之间具有含铱区域的磁性参考材料。 一些实施例包括磁性隧道结，其具有包含磁记录材料的导电第一磁电极，与第一电极间隔开并且包含磁性参考材料的导电第二磁极和在第一和第二电极之间的非磁性绝缘体材料。 第二电极的磁性参考材料包括含有与铂，钯和镍中的一种或多种交替的钴的堆叠的第一区域; 包括在所述第一区域上的含铱的第二区域; 并且在第二区域上包括含钴的第三区域。 第三区域直接抵靠非磁性绝缘体材料。

公开(公告)号：US09537088B1

公开(公告)日：2017-01-03

申请号：US14797622

申请日：2015-07-13

Applicant: Micron Technology, Inc.

Inventor： Jonathan D. Harms ,  Wei Chen ,  Sunil S. Murthy

IPC: H01L29/82 ,  H01L21/02 ,  H01L29/66 ,  H01L21/00 ,  H01L43/10 ,  H01L43/02 ,  H01L43/08 ,  G11C11/16

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08

Abstract: Some embodiments include a magnetic tunnel junction comprising magnetic reference material having an iridium-containing region between a multi-layer stack and a polarizer region. Some embodiments include a magnetic tunnel junction having a conductive first magnetic electrode which contains magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and which contains magnetic reference material, and a non-magnetic insulator material between the first and second electrodes. The magnetic reference material of the second electrode includes a first region containing a stack of cobalt alternating with one or more of platinum, palladium and nickel; includes an iridium-containing second region over the first region; and includes a cobalt-containing third region over the second region. The third region is directly against the non-magnetic insulator material.

Abstract translation: 一些实施例包括磁隧道结，其包括在多层堆叠和偏振器区域之间具有含铱区域的磁性参考材料。 一些实施例包括磁性隧道结，其具有包含磁记录材料的导电第一磁电极，与第一电极间隔开并且包含磁性参考材料的导电第二磁极和在第一和第二电极之间的非磁性绝缘体材料。 第二电极的磁性参考材料包括含有与铂，钯和镍中的一种或多种交替的钴的堆叠的第一区域; 包括在所述第一区域上的含铱的第二区域; 并且在第二区域上包括含钴的第三区域。 第三区域直接抵靠非磁性绝缘体材料。

公开(公告)号：US20150270480A1

公开(公告)日：2015-09-24

申请号：US14219748

申请日：2014-03-19

Applicant: Micron Technology, Inc.

Inventor： Jonathan D. Harms ,  Wei Chen ,  Sunil S. Murthy

IPC: H01L43/08 ,  H01L43/12 ,  H01L43/02

CPC classification number: H04L43/08 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12 ,  H04L43/02

Abstract: Spin torque transfer memory cells and methods of forming the same are described herein. As an example, spin torque transfer memory cells may include a self-aligning polarizer, a pinned polarizer, and a storage material formed between the self-aligning polarizer and the pinned polarizer.

Abstract translation: 旋转转矩传递存储器单元及其形成方法在此描述。 作为示例，自旋扭矩传递存储单元可以包括自对准偏振器，钉扎偏振器和形成在自对准偏振器和被钉入偏振器之间的存储材料。