公开(公告)号：US06663920B2

公开(公告)日：2003-12-16

申请号：US10100130

申请日：2002-03-18

申请人： Cherng-Chyi Han ,  Rong-Fu Xiao ,  Mao-Min Chen ,  Po-Kang Wang

发明人： Cherng-Chyi Han ,  Rong-Fu Xiao ,  Mao-Min Chen ,  Po-Kang Wang

IPC分类号： B05D306

CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  C23C14/48 ,  G11B5/3163 ,  H01F41/302

摘要： A method for forming a magnetoresistive (MR) layer first employs a substrate over which is formed a magnetoresistive (MR) layer formed of a magnetoresistive (MR) material. There is then ion implanted selectively, while employing an ion implant method, the magnetoresistive (MR) layer to form: (1) an ion implanted portion of the magnetoresistive (MR) layer formed of an ion implanted magnetoresistive (MR) material; and (2) an adjoining non ion implanted portion of the magnetoresistive (MR) layer formed of the magnetoresistive (MR) material, where the ion implanted magnetoresistive (MR) material is a non magnetoresistive (MR) material. The method may be employed for forming within magnetoresistive (MR) sensor elements magnetoresistive (MR) layers with enhanced dimensional uniformity, and in particular enhanced overlay dimensional uniformity.

公开(公告)号：US20050047011A1

公开(公告)日：2005-03-03

申请号：US10647762

申请日：2003-08-25

申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Po-Kang Wang

发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Po-Kang Wang

IPC分类号： G11B5/11 ,  G11B5/147 ,  G11B5/17 ,  G11B5/187 ,  G11B5/29

CPC分类号： G11B5/295 ,  G11B5/11 ,  G11B5/17 ,  G11B5/1871 ,  Y10T29/49002 ,  Y10T29/49021 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： Present processes used for planarizing a cavity filled with a coil and hard baked photoresist require that a significant amount of the thickness of the coils be removed. This increases the DC resistance of the coil. In the present invention, cavity and coil are overfilled with photoresist which is then hard baked. A layer of alumina is then deposited onto the surface of the excess photoresist, following which CMP is initiated. The presence of the alumina serves to stabilize the photoresist so that it does not delaminate. CMP is terminated as soon as the coils are exposed, allowing their full thickness to be retained and resulting in minimum DC resistance.

摘要翻译： 用于平坦化填充有线圈和硬烘烤光致抗蚀剂的空腔的现有方法需要去除大量的线圈厚度。 这增加了线圈的直流电阻。 在本发明中，腔和线圈被光致抗蚀剂过度填充，然后被硬烘烤。 然后将一层氧化铝沉积到多余光致抗蚀剂的表面上，随后开始CMP。 氧化铝的存在用于使光致抗蚀剂稳定，使其不分层。 一旦线圈被暴露，CMP就被终止，允许其保持其全部厚度并导致最小的直流电阻。

公开(公告)号：US06668443B2

公开(公告)日：2003-12-30

申请号：US09917347

申请日：2001-07-30

申请人： Chen-Jung Chien ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han ,  Moris Dovek ,  Po-Kang Wang ,  Mao-Min Chen

发明人： Chen-Jung Chien ,  Chyu-Jiuh Torng ,  Cherng-Chyi Han ,  Moris Dovek ,  Po-Kang Wang ,  Mao-Min Chen

IPC分类号： G11B5127

CPC分类号： B82Y10/00 ,  G11B5/313 ,  G11B5/3903 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

摘要： The possibility of shorting between a spin valve and its underlying magnetic shield layer can be largely eliminated by choosing the bottom spin valve structure. However, doing so causes the hard longitudinal bias that is standard for all such devices to degrade. The present invention overcomes this problem by inserting a thin NiCr, Ni, Fe, or Cr layer between the antiferromagnetic layer and the longitudinal bias layers. This provides a smoother surface for the bias layers to be deposited onto, thereby removing structural distortions to the longitudinal bias layer that would otherwise be present. A process for manufacturing the structure is also described.

摘要翻译： 通过选择底部自旋阀结构，可以大大消除自旋阀与其下面的磁屏蔽层之间短路的可能性。 然而，这样做会导致所有这些设备的标准硬的纵向偏差降级。 本发明通过在反铁磁层和纵向偏置层之间插入薄的NiCr，Ni，Fe或Cr层来克服这个问题。 这为偏压层沉积提供了更平滑的表面，从而消除了否则将存在的纵向偏置层的结构变形。 还描述了用于制造该结构的方法。

公开(公告)号：US06556377B2

公开(公告)日：2003-04-29

申请号：US10236580

申请日：2002-09-06

申请人： Mao-Min Chen ,  Po-Kang Wang ,  Cherng-Chyi Han

发明人： Mao-Min Chen ,  Po-Kang Wang ,  Cherng-Chyi Han

IPC分类号： G11B5147

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996 ,  Y10T29/49048

摘要： A structure and a method for a stitched write head having a sunken share pole. The method includes forming a bottom coil dielectric layer over the first half shared pole. Coils are formed over the bottom coil dielectric layer. Next, second half shared poles (P1) are formed over the first half shared pole (S2). We form a top coil dielectric layer over the structure. In a key step, we chemical-mechanical polish the top coil dielectric layer. A write gap layer (WG) is formed over the front second half shared pole and the top coil dielectric layer over the coils. An upper pole (P3) and hard mask are formed over the write gap layer. We etch the write gap layer and the second half shared pole (P1) using the upper pole as an etch mask to remove a portion of the second half shared pole (P1) adjacent to the write gap layer thereby forming a partially trimmed pole.

公开(公告)号：US06524491B1

公开(公告)日：2003-02-25

申请号：US09298935

申请日：1999-04-26

申请人： Chun Liu ,  Cherng-Chyi Han ,  Kochan Ju ,  Po-Kang Wang ,  Jei-Wei Chang

发明人： Chun Liu ,  Cherng-Chyi Han ,  Kochan Ju ,  Po-Kang Wang ,  Jei-Wei Chang

IPC分类号： G11B5127

CPC分类号： G11B5/3967 ,  G11B5/3163 ,  Y10T29/49021 ,  Y10T29/49032

摘要： A method of manufacturing a magnetic recording head includes the following steps. Form a low magnetic moment, first magnetic shield layer over a substrate. Form a read gap layer with a magnetoresistive head over the first shield layer. Form a seed layer over the read gap layer covered with a frame mask with a width “F”. Form a PLM second shield layer over the seed layer and planarize the shield layer. Form a non-magnetic copper or dielectric spacer layer over the PLM second shield layer. Form a first HMM, lower pole layer over the non-magnetic spacer layer. Cover the first HMM, lower pole layer with a write gap layer. Form an write head mask composed of two parallel rows of resist with an outer width “W” over the seed layer. Between the two rows of resist of the write head mask is a trench having a width “N”. Then form an HMM, upper pole layer over the write gap layer aside from the write head mask. Outside of the write head mask remove the upper pole layer and shape the lower pole layer by an IBE process.

摘要翻译： 制造磁记录头的方法包括以下步骤。 在基板上形成低磁矩，第一磁屏蔽层。 在第一屏蔽层上形成具有磁阻头的读取间隙层。 在覆盖有宽度为“F”的框架掩模的读取间隙层上形成种子层。 在种子层上形成PLM第二屏蔽层，并平整屏蔽层。 在PLM第二屏蔽层上形成非磁性铜或电介质间隔层。 在非磁性间隔层上形成第一个HMM，下极层。 覆盖第一个HMM，具有写间隙层的下极层。 在种子层上形成具有外部宽度“W”的两个平行的抗蚀剂行的写入头罩。 写头掩模的两行抗蚀剂之间是宽度为“N”的沟槽。 然后在写入头部掩模之外的写间隙层上形成HMM，上极层。 在写头掩模之外，通过IBE工艺去除上极层并形成下极层。

公开(公告)号：US06230390B1

公开(公告)日：2001-05-15

申请号：US09182761

申请日：1998-10-30

申请人： Yimin Guo ,  Kochan Ju ,  Po-Kang Wang ,  Cherng-Chyi Han ,  Hui-Chuan Wang

发明人： Yimin Guo ,  Kochan Ju ,  Po-Kang Wang ,  Cherng-Chyi Han ,  Hui-Chuan Wang

IPC分类号： G11B5127

CPC分类号： G11B5/3954 ,  G11B5/3932 ,  H04R15/00 ,  Y10T29/49034 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A dual stripe magnetoresistive (DSMR) sensor element, and a method for fabricating the dual stripe magnetoresistive (DSMR) sensor element. When fabricating the dual stripe magnetoresistive (DSMR) sensor element while employing the method, there are employed two pair of patterned magnetic biasing layers formed of a single magnetic biasing material. The two pair of patterned magnetic biasing layers bias a pair of patterned magnetoresistive (MR) layers in a pair of opposite canted directions. The method employs multiple thermal annealing methods one of which employs a thermal annealing temperature, a thermal annealing exposure time and an extrinsic magnetic bias field such that a first pair of transversely magnetically biased patterned magnetic biasing layers is not substantially demagnetized when forming a second pair of transversely magnetically biased patterned magnetic biasing layers of anti-parallel transverse magnetic bias direction to the first pair of transversely magnetically biased patterned magnetic biasing layers.

摘要翻译： 双条带磁阻（DSMR）传感器元件，以及制造双条磁阻（DSMR）传感元件的方法。 当采用该方法制造双重磁阻（DSMR）传感器元件时，使用由单个磁偏置材料形成的两对图案化的磁偏置层。 两对图案化的磁偏置层在一对相反的倾斜方向上偏置一对图案化磁阻（MR）层。 该方法采用多种热退火方法，其中之一采用热退火温度，热退火暴露时间和非本征磁偏置场，使得当形成第二对的第一对的第一对横向磁偏压图案化的偏磁层基本上消磁时， 向第一对横向磁偏置图案化磁偏置层的横向磁偏置图案化的反平行横向偏磁方向的偏置偏压层。

公开(公告)号：US06449131B2

公开(公告)日：2002-09-10

申请号：US09818963

申请日：2001-03-28

申请人： Yimin Guo ,  Kochan Ju ,  Po-Kang Wang ,  Cherng-Chyi Han ,  Hui-Chuan Wang

发明人： Yimin Guo ,  Kochan Ju ,  Po-Kang Wang ,  Cherng-Chyi Han ,  Hui-Chuan Wang

IPC分类号： G11B539

CPC分类号： G11B5/3954 ,  G11B5/3932 ,  H04R15/00 ,  Y10T29/49034 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A dual stripe magnetoresistive (DSMR) sensor element, and a method for fabricating the dual stripe magnetoresistive (DSMR) sensor element. When fabricating the dual stripe magnetoresistive (DSMR) sensor element while employing the method, there are employed two pair of patterned magnetic biasing layers formed of a single magnetic biasing material. The two pair of patterned magnetic biasing layers bias a pair of patterned magnetoresistive (MR) layers in a pair of opposite canted directions. The method employs multiple thermal annealing methods one of which employs a thermal annealing temperature, a thermal annealing exposure time and an extrinsic magnetic bias field such that a first pair of transversely magnetically biased patterned magnetic biasing layers is not substantially demagnetized when forming a second pair of transversely magnetically biased patterned magnetic biasing layers of anti-parallel transverse magnetic bias direction to the first pair of transversely magnetically biased patterned magnetic biasing layers.

摘要翻译： 双条带磁阻（DSMR）传感器元件，以及制造双条磁阻（DSMR）传感元件的方法。 当采用该方法制造双重磁阻（DSMR）传感器元件时，使用由单个磁偏置材料形成的两对图案化的磁偏置层。 两对图案化的磁偏置层在一对相反的倾斜方向上偏置一对图案化磁阻（MR）层。 该方法采用多种热退火方法，其中之一采用热退火温度，热退火暴露时间和非本征磁偏置场，使得当形成第二对的第一对成对的第一对横向磁偏压图案化磁偏置层时，基本上不消磁 向第一对横向磁偏置图案化磁偏置层的横向磁偏置图案化的反平行横向偏磁方向的偏置偏压层。

公开(公告)号：US08728825B2

公开(公告)日：2014-05-20

申请号：US13417398

申请日：2012-03-12

申请人： Po-Kang Wang ,  Xizeng Shi ,  Chyu-Jiuh Torng

发明人： Po-Kang Wang ,  Xizeng Shi ,  Chyu-Jiuh Torng

IPC分类号： G01N27/00

CPC分类号： G01R33/0052 ,  B82Y25/00 ,  G01N15/0656 ,  G01N27/745 ,  G01N2015/0065 ,  G01R33/05 ,  G01R33/093 ,  G01R33/098 ,  Y10T29/49124 ,  Y10T29/49986

摘要： A GMR sensor stripe provides a sensitive mechanism for detecting the presence of magnetized particles bonded to biological molecules that are affixed to a substrate. The adverse effect of hysteresis on the maintenance of a stable bias point for the magnetic moment of the sensor stripe free layer is eliminated by a combination of biasing the sensor stripe along its longitudinal direction rather than the usual transverse direction and by using the overcoat stress and magnetostriction of magnetic layers to create a compensatory transverse magnetic anisotropy. By connecting the stripes in an array and making the spaces between the stripes narrower than the dimension of the magnetized particle and by making the width of the stripes equal to the dimension of the particle, the sensitivity of the sensor array is enhanced.

摘要翻译： GMR传感器条带提供用于检测粘附到固定到基底上的生物分子的磁化颗粒的存在的敏感机制。 通过将传感器条沿其纵向而不是通常的横向方向偏置并通过使用外涂层应力和组合来消除滞后对传感器无条纹层的磁矩的稳定偏置点的维持的不利影响 磁层的磁致伸缩产生补偿横向磁各向异性。 通过将条纹连接在阵列中，使得条纹之间的空间比磁化粒子的尺寸窄，并且通过使条纹的宽度等于粒子的尺寸，增强了传感器阵列的灵敏度。

公开(公告)号：US08184399B2

公开(公告)日：2012-05-22

申请号：US12924416

申请日：2010-09-27

申请人： Yan Wu ,  Moris Dovek ,  Zhigang Bai ,  Cherng-Chyi Han ,  Jiun-Ting Lee ,  Po-Kang Wang

发明人： Yan Wu ,  Moris Dovek ,  Zhigang Bai ,  Cherng-Chyi Han ,  Jiun-Ting Lee ,  Po-Kang Wang

IPC分类号： G11B5/127

CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/3163

摘要： A perpendicular magnetic recording (PMR) head is fabricated with a tapered main pole having a variable thickness. The tapered portion of the pole is at the ABS tip and it can be formed by bevels at the leading or trailing edges or both. The taper terminates to form a region with a maximum thickness, t1, which extends for a certain distance proximally. Beyond this region of maximum thickness t1, the pole is then reduced to a constant minimum thickness t2. A yoke is attached to this region of constant minimum thickness. This pole design requires less flux because of the thinner region of the pole where it attaches to the yoke, but the thicker region just before the tapered ABS provides additional flux to drive the pole just before the ABS, so that high definition and field gain is achieved, yet fringing is significantly reduced.

摘要翻译： 制造具有可变厚度的锥形主极的垂直磁记录（PMR）头。 极的锥形部分在ABS尖端处，并且其可以由前缘或后缘处的斜面或两者形成。 锥形终止形成最大厚度的区域t1，其向近处延伸一定距离。 超过该最大厚度的区域t1，然后将极减小到恒定的最小厚度t2。 磁轭连接到恒定最小厚度的区域。 这个极设计需要更少的通量，因为它附着在磁轭上的磁极的较薄区域，而刚好在锥形ABS之前较厚的区域提供额外的磁通来驱动刚好在ABS之前的极点，因此高清晰度和场增益是 实现了，但边缘明显减少。

公开(公告)号：US20100232050A1

公开(公告)日：2010-09-16

申请号：US12381327

申请日：2009-03-11

申请人： Erhard Schreck ,  Kowang Liu ,  Kouji Shimazawa ,  Po-Kang Wang

发明人： Erhard Schreck ,  Kowang Liu ,  Kouji Shimazawa ,  Po-Kang Wang

IPC分类号： G11B5/02

CPC分类号： G11B5/314 ,  G11B5/6088 ,  G11B2005/001 ,  G11B2005/0021

摘要： A slider mounted TAMR (Thermal Assisted Magnetic Recording), DFH (Dynamic Flying Height) type read/write head using optical-laser generated surface plasmons in a small antenna to locally heat a magnetic medium, uses the same optical laser at low power to pre-heat the antenna. Maintaining the antenna at this pre-heated temperature, approximately 50% of its highest temperature during write operations, allows the DFH mechanism sufficient time to compensate for the thermal protrusion of the antenna at that lower temperature, so that thermal protrusion transients are significantly reduced when a writing operation occurs and full laser power is applied. The time constant for antenna protrusion is less than the time constant for DFH fly height compensation, so, without pre-heating, the thermal protrusion of the antenna due to absorption of optical radiation cannot be compensated by the DFH effect.

摘要翻译： 使用在小天线中使用光学激光产生的表面等离子体激光器来局部加热磁介质的TAMR（热辅助磁记录），DFH（动态飞行高度）型读/写头的滑块，以低功率使用相同的光学激光器 - 加热天线。 将天线维持在该预热温度下，在写入操作期间其最高温度的约50％允许DFH机构有足够的时间来补偿在该较低温度下的天线的热突起，使得热突起瞬变显着降低 发生写入操作并施加全激光功率。 天线突起的时间常数小于DFH飞行高度补偿的时间常数，因此，在没有预热的情况下，由于吸收光辐射而导致的天线热突起不能被DFH效应补偿。