公开(公告)号：US08173521B2

公开(公告)日：2012-05-08

申请号：US12452085

申请日：2008-07-03

申请人： Norihiro Kobayashi ,  Hiroji Aga ,  Yasuo Nagaoka ,  Nobuhiko Noto

发明人： Norihiro Kobayashi ,  Hiroji Aga ,  Yasuo Nagaoka ,  Nobuhiko Noto

IPC分类号： H01L21/30

CPC分类号： H01L21/76254 ,  H01L21/02057 ,  H01L21/26506

摘要： The present invention is a method for manufacturing a bonded wafer by an ion implantation delamination method including at least the steps of, bonding a bond wafer having a micro bubble layer formed by gas ion implantation with a base wafer to be a supporting substrate, delaminating the bond wafer along the micro bubble layer as a boundary to form a thin film on the base wafer, the method comprising, cleaning the bonded wafer after delaminating the bond wafer using ozone water; performing rapid thermal anneal process under a hydrogen containing atmosphere; forming a thermal oxide film on a surface layer of the bonded wafer by subjecting to heat treatment under an oxidizing gas atmosphere and removing the thermal oxide film; subjecting to heat treatment under a non-oxidizing gas atmosphere. As a result, the method for manufacturing a bonded wafer, which can remove the damage caused by the ion implantation and can suppress a occurrence of the concave defects without deterioration of surface roughness on the surface of the thin film of the bonded wafer after delamination is provided.

摘要翻译： 本发明是一种通过离子注入分层方法制造接合晶片的方法，该方法至少包括将具有通过气体离子注入形成的微气泡层的接合晶片与基底晶片接合成为支撑基板的步骤， 沿着微气泡层接合晶片作为边界以在基底晶片上形成薄膜，所述方法包括：在使用臭氧水分离所述接合晶片之后清洁所述接合晶片; 在含氢气氛下进行快速热退火工艺; 通过在氧化气体气氛下进行热处理并除去热氧化膜，在接合晶片的表面层上形成热氧化膜; 在非氧化性气体气氛下进行热处理。 结果，能够去除离子注入引起的损伤的粘合晶片的制造方法，能够抑制脱层后的接合晶片的表面的表面粗糙度的劣化的凹陷缺陷的发生， 提供。

公开(公告)号：US20130102126A1

公开(公告)日：2013-04-25

申请号：US13699118

申请日：2011-04-21

申请人： Hiroji Aga ,  Satoshi Oka ,  Nobuhiko Noto

发明人： Hiroji Aga ,  Satoshi Oka ,  Nobuhiko Noto

IPC分类号： H01L21/265

CPC分类号： H01L21/265 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3247 ,  H01L21/76254

摘要： A method for manufacturing a bonded wafer including: forming an ion-implanted layer in a bond wafer, bonding the bond wafer to a base wafer, delaminating the bond wafer at the ion-implanted layer, and performing a flattening heat treatment on a surface after delamination, in which a silicon single crystal wafer is used as the bond wafer where the region to form the ion-implanted layer has a resistivity of 0.2 Ωcm or less, the ion-implanted layer is formed where the ion dose for forming the layer is 4×1016/cm2 or less, and the flattening heat treatment is performed in an atmosphere including HCl gas. Therefore, a method for manufacturing a bonded wafer having a low resistivity thin film (SOI layer) that contains dopant, such as boron, with high concentration according to the ion-implantation delamination method, where outward diffusion of dopant and suction due to oxidation can be inhibited to maintain low resistivity.

摘要翻译： 一种用于制造接合晶片的方法，包括：在接合晶片中形成离子注入层，将接合晶片接合到基底晶片，在离子注入层分层接合晶片，以及在表面之后进行平坦化热处理 分层，其中使用硅单晶晶片作为形成离子注入层的区域的电阻率为0.2Ω·米或更小的接合晶片，形成离子注入层，其中用于形成层的离子剂量为 4×10 16 / cm 2以下，扁平化热处理在含有HCl气体的气氛中进行。 因此，根据离子注入脱层法，具有含有高掺杂剂等硼等掺杂剂的低电阻薄膜（SOI层）的接合晶片的制造方法，其中掺杂剂的向外扩散和由于氧化引起的抽吸可以 被抑制以维持低电阻率。

公开(公告)号：US07838388B2

公开(公告)日：2010-11-23

申请号：US12379938

申请日：2009-03-04

申请人： Satoshi Oka ,  Nobuhiko Noto

发明人： Satoshi Oka ,  Nobuhiko Noto

IPC分类号： H01L21/76

CPC分类号： H01L21/76254 ,  H01L21/3065

摘要： Provided is a method for producing an SOI substrate having a thick-film SOI layer, in which an ion-implanted layer is formed by implanting at least one kind of ion of hydrogen ion and a rare gas ion into a surface of a bond wafer, an SOI substrate having an SOI layer is produced by, after the ion-implanted surface of the bond wafer and a surface of a base wafer are bonded together via an oxide film, delaminating the bond wafer along the ion-implanted layer, heat treatment is performed on the SOI substrate having the SOI layer in a reducing atmosphere containing hydrogen or an atmosphere containing hydrogen chloride gas, and, after the surface of the SOI layer is polished by CMP, a silicon epitaxial layer is grown on the SOI layer of the SOI substrate.

摘要翻译： 提供一种制造具有厚膜SOI层的SOI衬底的方法，其中通过将至少一种氢离子和稀有气体离子的离子注入到接合晶片的表面中形成离子注入层， 通过在接合晶片的离子注入表面和基底晶片的表面经由氧化物膜接合在一起之后，沿着离子注入层使接合晶片分层，制造具有SOI层的SOI衬底，热处理为 在含有氢或含有氯化氢气体的气氛的还原气氛中在具有SOI层的SOI衬底上进行SOI SOI层的SOI表面的SOI外延生长后，在SOI的SOI层上生长硅外延层 基质。

公开(公告)号：US20100120223A1

公开(公告)日：2010-05-13

申请号：US12452085

申请日：2008-07-03

申请人： Norihiro Kobayashi ,  Hiroji Aga ,  Yasuo Nagaoka ,  Nobuhiko Noto

发明人： Norihiro Kobayashi ,  Hiroji Aga ,  Yasuo Nagaoka ,  Nobuhiko Noto

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/02057 ,  H01L21/26506

摘要： The present invention is a method for manufacturing a bonded wafer by an ion implantation delamination method including at least the steps of, bonding a bond wafer having a micro bubble layer formed by gas ion implantation with a base wafer to be a supporting substrate, delaminating the bond wafer along the micro bubble layer as a boundary to form a thin film on the base wafer, the method comprising, cleaning the bonded wafer after delaminating the bond wafer using ozone water; performing rapid thermal anneal process under a hydrogen containing atmosphere; forming a thermal oxide film on a surface layer of the bonded wafer by subjecting to heat treatment under an oxidizing gas atmosphere and removing the thermal oxide film; subjecting to heat treatment under a non-oxidizing gas atmosphere. As a result, the method for manufacturing a bonded wafer, which can remove the damage caused by the ion implantation and can suppress a occurrence of the concave defects without deterioration of surface roughness on the surface of the thin film of the bonded wafer after delamination is provided.

摘要翻译： 本发明是一种通过离子注入分层方法制造接合晶片的方法，该方法至少包括将具有通过气体离子注入形成的微气泡层的接合晶片与基底晶片接合成为支撑基板的步骤， 沿着微气泡层接合晶片作为边界以在基底晶片上形成薄膜，所述方法包括：在使用臭氧水分离所述接合晶片之后清洁所述接合晶片; 在含氢气氛下进行快速热退火工艺; 通过在氧化气体气氛下进行热处理并除去热氧化膜，在接合晶片的表面层上形成热氧化膜; 在非氧化性气体气氛下进行热处理。 结果，能够去除离子注入引起的损伤的粘合晶片的制造方法，能够抑制脱层后的接合晶片的表面的表面粗糙度的劣化的凹陷缺陷的发生， 提供。

公开(公告)号：US08389382B2

公开(公告)日：2013-03-05

申请号：US13130681

申请日：2009-10-15

申请人： Satoshi Oka ,  Nobuhiko Noto

发明人： Satoshi Oka ,  Nobuhiko Noto

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76254

摘要： A method for manufacturing a bonded wafer including the steps of: implanting at least one gas ion of a hydrogen ion and a rare gas ion into a bond wafer from a surface thereof to form an ion-implanted layer; bonding the ion-implanted surface of the bond wafer to a surface of a base wafer directly or through an oxide film; thereafter delaminating the bond wafer at the ion-implanted layer to prepare the bonded wafer having a silicon thin film formed on the base wafer; and performing a flattening heat treatment on the bonded wafer under an atmosphere containing hydrogen or hydrogen chloride, wherein a dopant gas is added into the atmosphere of the flattening heat treatment to perform the heat treatment, the dopant gas having the same conductivity type as a dopant contained in the silicon thin film.

摘要翻译： 一种用于制造接合晶片的方法，包括以下步骤：从其表面将至少一种氢离子和稀有气体离子的气体离子注入接合晶片以形成离子注入层; 将接合晶片的离子注入表面直接或通过氧化膜键合到基底晶片的表面; 然后在离子注入层分层接合晶片，以制备在基底晶片上形成有硅薄膜的接合晶片; 在包含氢或氯化氢的气氛下，在接合晶片上进行平坦化的热处理，其中在平坦化热处理的气氛中加入掺杂气体进行热处理，掺杂气体具有与掺杂剂相同的导电类型 包含在硅薄膜中。

公开(公告)号：US20090258474A1

公开(公告)日：2009-10-15

申请号：US12379938

申请日：2009-03-04

申请人： Satoshi Oka ,  Nobuhiko Noto

发明人： Satoshi Oka ,  Nobuhiko Noto

IPC分类号： H01L21/762 ,  H01L21/302

CPC分类号： H01L21/76254 ,  H01L21/3065

摘要： Provided is a method for producing an SOI substrate having a thick-film SOI layer, in which an ion-implanted layer is formed by implanting at least one kind of ion of hydrogen ion and a rare gas ion into a surface of a bond wafer, an SOI substrate having an SOI layer is produced by, after the ion-implanted surface of the bond wafer and a surface of a base wafer are bonded together via an oxide film, delaminating the bond wafer along the ion-implanted layer, heat treatment is performed on the SOI substrate having the SOI layer in a reducing atmosphere containing hydrogen or an atmosphere containing hydrogen chloride gas, and, after the surface of the SOI layer is polished by CMP, a silicon epitaxial layer is grown on the SOI layer of the SOI substrate.

摘要翻译： 提供一种制造具有厚膜SOI层的SOI衬底的方法，其中通过将至少一种氢离子和稀有气体离子的离子注入到接合晶片的表面中形成离子注入层， 通过在接合晶片的离子注入表面和基底晶片的表面经由氧化物膜接合在一起之后，沿着离子注入层使接合晶片分层，制造具有SOI层的SOI衬底，热处理为 在含有氢或含有氯化氢气体的气氛的还原气氛中在具有SOI层的SOI衬底上进行SOI SOI层的SOI表面的SOI外延生长后，在SOI的SOI层上生长硅外延层 基质。

公开(公告)号：US20110237049A1

公开(公告)日：2011-09-29

申请号：US13130681

申请日：2009-10-15

申请人： Satoshi Oka ,  Nobuhiko Noto

发明人： Satoshi Oka ,  Nobuhiko Noto

IPC分类号： H01L21/302

CPC分类号： H01L21/76254

摘要： A method for manufacturing a bonded wafer including the steps of: implanting at least one gas ion of a hydrogen ion and a rare gas ion into a bond wafer from a surface thereof to form an ion-implanted layer; bonding the ion-implanted surface of the bond wafer to a surface of a base wafer directly or through an oxide film; thereafter delaminating the bond wafer at the ion-implanted layer to prepare the bonded wafer having a silicon thin film formed on the base wafer; and performing a flattening heat treatment on the bonded wafer under an atmosphere containing hydrogen or hydrogen chloride, wherein a dopant gas is added into the atmosphere of the flattening heat treatment to perform the heat treatment, the dopant gas having the same conductivity type as a dopant contained in the silicon thin film.

摘要翻译： 一种用于制造接合晶片的方法，包括以下步骤：从其表面将至少一种氢离子和稀有气体离子的气体离子注入接合晶片以形成离子注入层; 将接合晶片的离子注入表面直接或通过氧化膜键合到基底晶片的表面; 然后在离子注入层分层接合晶片，以制备在基底晶片上形成有硅薄膜的接合晶片; 在包含氢或氯化氢的气氛下，在接合晶片上进行平坦化的热处理，其中在平坦化热处理的气氛中加入掺杂气体进行热处理，掺杂气体具有与掺杂剂相同的导电类型 包含在硅薄膜中。

公开(公告)号：US20090305485A1

公开(公告)日：2009-12-10

申请号：US12309527

申请日：2007-07-04

申请人： Satoshi Oka ,  Nobuhiko Noto

发明人： Satoshi Oka ,  Nobuhiko Noto

IPC分类号： H01L21/20

CPC分类号： H01L21/0251 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/02661

摘要： The present invention is a method for producing a semiconductor substrate, including steps of forming a SiGe gradient composition layer and a SiGe constant composition layer on a Si single crystal substrate, flattening a surface of the SiGe constant composition layer, removing a natural oxide film on the flattened surface of the SiGe constant composition layer, and forming a strained Si layer on the surface of the SiGe constant composition layer from which the natural oxide film has been removed, wherein the formation of the SiGe gradient composition layer and the formation of the SiGe constant composition layer are performed at a temperature T1 that is higher than 800° C., the removal of the natural oxide film from the surface of the SiGe constant composition layer is performed in a reducing atmosphere through a heat treatment at a temperature T2 that is equal to or higher than 800° C. and lower than the temperature T1, and the formation of the strained Si layer is performed at a temperature T3 that is lower than the temperature T1. This method enables epitaxial growth of the strained Si layer on the flattened SiGe layer without degrading surface flatness of the SiGe layer.

摘要翻译： 本发明是一种半导体衬底的制造方法，包括以下步骤：在Si单晶衬底上形成SiGe梯度组合物层和SiGe恒定组成层，使SiGe恒定组合物层的表面平坦化，除去天然氧化膜 SiGe恒定组成层的平坦化表面，并且在去除了自然氧化膜的SiGe恒定组合物层的表面上形成应变Si层，其中形成SiGe梯度组合物层并形成SiGe 恒定组成层在高于800℃的温度T1下进行，通过在温度T2即热处理下在还原气氛中从SiGe恒定组成层的表面除去天然氧化膜 等于或高于800℃并低于温度T1，并且应变Si层的形成在te 温度T3低于温度T1。 该方法能够使平坦化的SiGe层上的应变Si层外延生长，而不降低SiGe层的表面平坦度。

公开(公告)号：US20110281420A1

公开(公告)日：2011-11-17

申请号：US13145275

申请日：2010-01-08

申请人： Hiroji Aga ,  Isao Yokokawa ,  Nobuhiko Noto

发明人： Hiroji Aga ,  Isao Yokokawa ,  Nobuhiko Noto

IPC分类号： H01L21/301

CPC分类号： H01L21/76254 ,  H01L21/30608 ,  H01L21/31111

摘要： A method for manufacturing an SOI wafer including implanting a gas ion into a bond wafer from a surface thereof to form an ion-implanted layer; bonding the ion-implanted surface of the bond wafer to a surface of a base wafer through an insulator film; and delaminating the bond wafer at the ion-implanted layer to manufacture the SOI wafer. The method further includes immersing the bonded wafer prior to the delamination of the bond wafer at the ion-implanted layer into a liquid capable of dissolving the insulator film or exposing the bonded wafer to a gas capable of dissolving the insulator film so that the insulator film located between the bond wafer and the base wafer is etched from an outer circumferential edge toward a center of the bonded wafer.

摘要翻译： 一种用于制造SOI晶片的方法，包括从其表面将气体离子注入接合晶片以形成离子注入层; 通过绝缘膜将接合晶片的离子注入表面接合到基底晶片的表面; 并在离子注入层分层接合晶片以制造SOI晶片。 该方法还包括在接合晶片在离子注入层分层之前将接合的晶片浸入能够溶解绝缘体膜的液体中或将接合的晶片暴露于能够溶解绝缘膜的气体，使得绝缘膜 位于接合晶片和基底晶片之间的位置从外圆周边缘朝向接合晶片的中心蚀刻。

公开(公告)号：US20060185581A1

公开(公告)日：2006-08-24

申请号：US11353046

申请日：2006-02-14

申请人： Hiroji Aga ,  Nobuhiko Noto ,  Kiyoshi Mitani

发明人： Hiroji Aga ,  Nobuhiko Noto ,  Kiyoshi Mitani

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B31/22 ,  C30B29/06 ,  C30B29/52

摘要： The present invention provides a method for producing a semiconductor wafer comprising at least steps of, forming a Si1-XGeX layer (0

摘要翻译： 本发明提供一种用于制造半导体晶片的方法，该方法至少包括以下步骤：形成具有临界状态的Si 1-X 1 Ge x X 1层（0