利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

75 条记录 (耗时 0.03 秒)

    Axial flow fan
    21.
    发明授权
    Axial flow fan 有权
    轴流风机

    公开(公告)号：US08616864B2

    公开(公告)日：2013-12-31

    申请号：US13001503

    申请日：2009-06-15

    申请人： Toshiyuki Nakamura ,  Masahiro Koike ,  Naoya Inada

    发明人： Toshiyuki Nakamura ,  Masahiro Koike ,  Naoya Inada

    IPC分类号： F04B35/04

    CPC分类号： F04D25/08 ,  F04D25/0613 ,  F04D25/0693 ,  F04D29/52

    摘要： An axial flow fan provided herein allows for a wide range of selection for placement of the fan and wiring of the lead wires. The axial flow fan includes a first lead wire engaging portion 17 configured to be engaged with a plurality of lead wires 15 such that the lead wires are pulled out therefrom into an outer space OS defined between a first flange 21 and a second flange 23 of a fan housing 3, a second lead wire engaging portion 19 configured to be engaged with the plurality of lead wires 15 such that the lead wires, which have been engaged with the first lead wire engaging portion 17 and pulled out therefrom into the outer space OS, are then pulled out toward the other side in the axial direction where the second flange 23 is positioned, and a third lead wire engaging portion 27 configured to be engaged with the plurality of lead wires 15 such that the lead wires, which have been engaged with the first lead wire engaging portion 17 and pulled out therefrom into the outer space OS, are then pulled out in the axial direction toward one side where the first flange 21 is positioned. The third lead wire engaging portion 27 is formed in the first flange 21 at a given distance from the first lead wire engaging portion 17.

    摘要翻译： 这里提供的轴流风扇允许宽范围的选择用于布置风扇和引线的布线。 轴流风扇包括第一引线接合部分17，其被配置为与多个引线15接合，使得引线从其中被拉出到限定在第一凸缘21和第二凸缘21之间的外部空间OS中 风扇壳体3，第二引线接合部分19，被配置为与多个引线15接合，使得已经与第一引线接合部分17接合并从其中被拉出到外部空间OS中的引线， 然后在第二凸缘23所在的轴向方向上向另一侧拉出，以及第三引线接合部27，其被构造成与多根引线15接合，使得已经与 然后将第一引线接合部17从外部空间OS中拉出，然后沿着轴向向第一凸缘21的一侧被拉出。 第三引线接合部分27以与第一引线接合部分17相距给定的距离形成在第一凸缘21中。

    Airbag device and production method thereof
    22.
    发明授权
    Airbag device and production method thereof 失效
    安全气囊装置及其制造方法

    公开(公告)号：US08356833B2

    公开(公告)日：2013-01-22

    申请号：US12626008

    申请日：2009-11-25

    申请人： Masahiro Koike ,  Kazuyuki Yamamoto

    发明人： Masahiro Koike ,  Kazuyuki Yamamoto

    IPC分类号： B60R21/231 ,  B60R21/232

    CPC分类号： B60R21/235 ,  B29C65/48 ,  B29C65/52 ,  B29C66/1122 ,  B29C66/3242 ,  B29C66/432 ,  B29C66/4322 ,  B29C66/729 ,  B29K2313/00 ,  B29L2022/027 ,  B60R2021/2358 ,  Y10T156/10

    摘要： An airbag is formed of two base fabrics. An adhesive agent is pasted with some width on one of the base fabrics and then another of the base fabrics is put on the one of the base fabrics. The two fabrics are adhered together to form the airbag. Pasting start/end portions of the adhesive agent is set at a gas introducing portion of the airbag. Pasting start/end points (terminal ends of the start/end portions) is located outside a path in the gas introducing portion through which a gas is introduced into an inside of the airbag. According to an airbag with the airbag, assembling workability of the airbag can be improved.

    摘要翻译： 安全气囊由两个基布组成。 粘合剂在一个基底织物上粘贴一定宽度，然后将另一个基底织物放在一个基底织物上。 两个织物粘合在一起以形成气囊。 将粘合剂的粘贴开始/末端部分设置在气囊的气体引入部分。 粘贴开始/结束点（起始/结束部分的末端）位于气体引入部分中的气体的外部，气体导入部分通过该路径将气体引入气囊的内部。 根据具有气囊的气囊，能够提高气囊的组装加工性。

    Nonvolatile semiconductor memory apparatus
    23.
    发明授权
    Nonvolatile semiconductor memory apparatus 有权
    非易失性半导体存储装置

    公开(公告)号：US08154072B2

    公开(公告)日：2012-04-10

    申请号：US12403493

    申请日：2009-03-13

    申请人： Masahiro Koike ,  Yuichiro Mitani ,  Tatsuo Shimizu ,  Naoki Yasuda ,  Yasushi Nakasaki ,  Akira Nishiyama

    发明人： Masahiro Koike ,  Yuichiro Mitani ,  Tatsuo Shimizu ,  Naoki Yasuda ,  Yasushi Nakasaki ,  Akira Nishiyama

    IPC分类号： H01L29/788

    CPC分类号： H01L29/7881 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/11521 ,  H01L29/513

    摘要： A nonvolatile semiconductor memory apparatus includes: a source and drain regions formed at a distance from each other in a semiconductor layer; a first insulating film formed on the semiconductor layer located between the source region and the drain region, the first insulating film including a first insulating layer and a second insulating layer formed on the first insulating layer and having a higher dielectric constant than the first insulating layer, the second insulating layer having a first site performing hole trapping and releasing, the first site being formed by adding an element different from a base material to the second insulating film, the first site being located at a lower level than a Fermi level of a material forming the semiconductor layer; a charge storage film formed on the first insulating film; a second insulating film formed on the charge storage film; and a control gate electrode formed on the second insulating film.

    摘要翻译： 一种非易失性半导体存储器件，包括：在半导体层中形成为彼此间隔一定距离的源区和漏区; 形成在位于源极区域和漏极区域之间的半导体层上的第一绝缘膜，所述第一绝缘膜包括形成在所述第一绝缘层上并具有比所述第一绝缘层高的介电常数的第一绝缘层和第二绝缘层 所述第二绝缘层具有进行孔捕获和释放的第一部位，所述第一部位通过将不同于基材的元素添加到所述第二绝缘膜而形成，所述第一部位位于比所述第二绝缘膜的费米能级更低的水平 形成半导体层的材料; 形成在所述第一绝缘膜上的电荷存储膜; 形成在电荷存储膜上的第二绝缘膜; 以及形成在所述第二绝缘膜上的控制栅电极。

    Polishing Pad and a Chemical-Mechanical Polishing Method
    28.
    发明申请
    Polishing Pad and a Chemical-Mechanical Polishing Method 审中-公开
    抛光垫和化学机械抛光方法

    公开(公告)号：US20080125020A1

    公开(公告)日：2008-05-29

    申请号：US11938540

    申请日：2007-11-12

    申请人： Li Jiang ,  Wei Zang ,  Hua Ji ,  Masahiro Koike

    发明人： Li Jiang ,  Wei Zang ,  Hua Ji ,  Masahiro Koike

    IPC分类号： B24D11/00 ,  B24B1/00

    CPC分类号： B24B37/26

    摘要： The present invention provides a polishing pad, which has a flatness area and an emboss area on its polishing surface, wherein the flatness area is a flat surface with a roughness less than 20 um, for polishing a wafer; the emboss area has grooves, holes or a combination thereof, for pulling up a wafer from the polishing surface after polishing. By using the polishing pad according to the invention, a wafer may have a higher surface flatness after Chemical-Mechanical Polishing (CMP); and after polishing, the wafer is moved to the emboss area of the polishing pad, so that the wafer may be easily pulled up from the polishing pad surface.

    摘要翻译： 本发明提供一种抛光垫，其抛光面上具有平坦度区域和压花区域，其中平坦度区域是粗糙度小于20μm的平坦表面，用于抛光晶片; 压花区域具有凹槽，孔或其组合，用于在抛光之后从抛光表面拉起晶片。 通过使用根据本发明的抛光垫，化学机械抛光（CMP）后，晶片可具有更高的表面平整度; 并且在抛光之后，将晶片移动到抛光垫的压花区域，使得晶片可以容易地从抛光垫表面上拉。

    Eddy current flaw detection sensor and method
    29.
    发明授权
    Eddy current flaw detection sensor and method 有权
    涡流探伤传感器及方法

    公开(公告)号：US07358721B2

    公开(公告)日：2008-04-15

    申请号：US11680857

    申请日：2007-03-01

    申请人： Soshi Narishige ,  Akira Nishimizu ,  Masahiro Koike ,  Yoshiharu Abe ,  Yuuichi Narumi ,  Hirofumi Ouchi

    发明人： Soshi Narishige ,  Akira Nishimizu ,  Masahiro Koike ,  Yoshiharu Abe ,  Yuuichi Narumi ,  Hirofumi Ouchi

    IPC分类号： G01N27/82 ,  G01N27/90

    CPC分类号： G01N27/902

    摘要： An eddy current flaw detection sensor is provided which can detect a circumferential crack occurring at the deformed portion or peripheral portion thereof of a heat transfer tube with a high degree of sensitivity. Two excitation coils 1a, 1b cause eddy current B to flow in the axial direction of a tubular test object 31. A detection coil 2 disposed between the excitation coils 1a, 1b detects bypass eddy current D which flows in the circumferential direction of the test object 31 while bypassing a circumferential crack E. For this purpose, the coil axes of the excitation coils 1a, 1b are directed to the radial direction of the cylindrical protection member 3 and the coil axis of the detection coil 2 is directed to the axial direction of the protection member 3.

    摘要翻译： 提供一种涡流探伤传感器，其能够以高灵敏度检测在传热管的变形部分或其周边部分处发生的周向裂纹。 两个励磁线圈1a，1b使涡流B沿管状被检体31的轴向流动。配置在励磁线圈1a，1b之间的检测线圈2检测在周向上流动的旁路涡流D 同时绕过周向裂纹E.为此，励磁线圈1a，1b的线圈轴线指向圆柱形保护构件3的径向，并且检测线圈2的线圈轴线是 指向保护构件3的轴向。