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29 条记录 (耗时 0.027 秒)

    Method for manufacturing semiconductor device
    21.
    发明授权
    Method for manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US07416942B2

    公开(公告)日：2008-08-26

    申请号：US11708532

    申请日：2007-02-21

    申请人： Yukiteru Matsui ,  Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Takeshi Nishioka ,  Hiroyuki Yano

    发明人： Yukiteru Matsui ,  Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Takeshi Nishioka ,  Hiroyuki Yano

    IPC分类号： H01L21/336 ,  H01L21/8238 ,  H01L21/461

    CPC分类号： H01L27/11543 ,  C09G1/02 ,  H01L21/3212 ,  H01L21/7684 ,  H01L27/11526

    摘要： A method for manufacturing a semiconductor device is provided. The method includes successively forming a first silicon film and a mask film above a semiconductor substrate through a gate insulating film, forming a plurality of trenches in the first silicon film and in the mask film to a depth to reach the semiconductor substrate, filling the plurality of trenches with the silicon oxide film, removing the mask film to expose the first silicon film existing between the silicon oxide films, selectively growing a second silicon film on the first silicon film, planarizing the second silicon film using an alkaline slurry exhibiting a pH of 13 or less and containing abrasive grains and a cationic surfactant, thereby obtaining a floating gate electrode film comprising the first and second silicon films, forming an interelectrode insulating film on the entire surface, and forming a control gate electrode film on the interelectrode insulating film.

    摘要翻译： 提供一种制造半导体器件的方法。 该方法包括通过栅极绝缘膜在半导体衬底上连续地形成第一硅膜和掩模膜，在第一硅膜和掩模膜中形成多个沟槽到达半导体衬底的深度，填充多个 的沟槽，去除掩模膜以暴露存在于氧化硅膜之间的第一硅膜，选择性地生长第一硅膜上的第二硅膜，使用表现出pH为 13以下，含有磨粒和阳离子性表面活性剂，从而得到包含第一和第二硅膜的浮栅电极膜，在整个表面上形成电极间绝缘膜，并在电极间绝缘膜上形成控制栅极电极膜。

    Methods for manufacturing semiconductor devices
    22.
    发明申请
    Methods for manufacturing semiconductor devices 审中-公开
    制造半导体器件的方法

    公开(公告)号：US20070111433A1

    公开(公告)日：2007-05-17

    申请号：US11594726

    申请日：2006-11-09

    申请人： Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Yukiteru Matsui ,  Takeshi Nishioka ,  Hiroyuki Yano

    发明人： Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Yukiteru Matsui ,  Takeshi Nishioka ,  Hiroyuki Yano

    IPC分类号： H01L21/8242

    CPC分类号： H01L27/105 ,  H01L27/11526 ,  H01L27/11543 ,  H01L29/40114 ,  H01L29/66825

    摘要： A method for manufacturing a semiconductor device comprises forming a first silicon layer above a semiconductor substrate; forming a stopper layer on said first silicon layer; partially removing said stopper layer and said first silicon layer above said semiconductor substrate to form a plurality of trenches; forming an insulating layer on said stopper layer with inside of said trenches; partially removing said insulating layer to expose said stopper layer; after partially removing said insulating layer, removing said stopper layer to expose said first silicon layer; selectively growing second silicon layer on said exposed first silicon layer; nonselectively growing a third silicon layer on said second silicon layer; and polishing at least a surface of said third silicon layer by performing chemical mechanical polishing.

    摘要翻译： 一种制造半导体器件的方法包括在半导体衬底上形成第一硅层; 在所述第一硅层上形成阻挡层; 部分地去除所述半导体衬底之上的所述阻挡层和所述第一硅层以形成多个沟槽; 在所述沟槽的内部在所述阻挡层上形成绝缘层; 部分地去除所述绝缘层以暴露所述阻挡层; 在部分地去除所述绝缘层之后，去除所述阻挡层以露出所述第一硅层; 在所述暴露的第一硅层上选择性地生长第二硅层; 在所述第二硅层上非选择地生长第三硅层; 以及通过进行化学机械抛光来抛光所述第三硅层的至少一个表面。

    Ink jet recording method using plural dots to form each recording unit
    23.
    发明授权
    Ink jet recording method using plural dots to form each recording unit 失效
    使用多个点形成每个记录单元的喷墨记录方法

    公开(公告)号：US5216445A

    公开(公告)日：1993-06-01

    申请号：US856814

    申请日：1992-03-24

    申请人： Shinichi Hirasawa ,  Hiroyuki Maeda

    发明人： Shinichi Hirasawa ,  Hiroyuki Maeda

    IPC分类号： B41J2/21 ,  B41J2/505

    CPC分类号： B41J2/5056 ,  B41J2/2125

    摘要： In an ink jet recording method using an ink jet recording head of an on-demand type, ink droplets are discharged at an interval which is 1/N (N is a natural number of 2 or more) of the pitch of the recording units. One recording unit is formed of a number of ink droplets equal to N.sup.2.

    摘要翻译： 在使用按需型喷墨记录头的喷墨记录方法中，墨滴以记录单元的间距的1 / N（N为2以上的自然数）的间隔排出。 一个记录单元由等于N 2的多个墨滴形成。

    Method of fabricating semiconductor device
    24.
    发明申请
    Method of fabricating semiconductor device 审中-公开
    制造半导体器件的方法

    公开(公告)号：US20110263124A1

    公开(公告)日：2011-10-27

    申请号：US13067840

    申请日：2011-06-29

    申请人： Shinichi Hirasawa ,  Shinya Watanabe

    发明人： Shinichi Hirasawa ,  Shinya Watanabe

    IPC分类号： H01L21/28

    CPC分类号： H01L27/11521 ,  H01L29/40114 ,  H01L29/7881

    摘要： A method of fabricating a semiconductor device according to one embodiment includes: forming a plurality of Si-based pattern portions above a semiconductor substrate, the plurality of Si-based pattern portions being adjacent in a direction substantially parallel to a surface of the semiconductor substrate via insulating films; forming a metal film above the plurality of Si-based pattern portions and the insulating films so as to contact with the plurality of Si-based pattern portions; processing whole areas or upper portions of the plurality of Si-based pattern portions into a plurality of silicide layers by a silicidation reaction between the plurality of Si-based pattern portions and the metal film by heat treatment; and removing the plurality of silicide layers formed above the insulating films by applying planarizing treatment to the plurality of silicide layers.

    摘要翻译： 根据一个实施例的制造半导体器件的方法包括：在半导体衬底之上形成多个Si基图案部分，所述多个Si基图案部分在基本上平行于半导体衬底的表面的方向上相邻的方向 绝缘膜; 在所述多个Si基图案部分和所述绝缘膜之上形成金属膜以与所述多个Si基图案部分接触; 通过多个Si基图案部分和金属膜之间的硅化反应将多个Si基图案部分的整个区域或上部处理成多个硅化物层; 以及通过对所述多个硅化物层进行平坦化处理来去除在所述绝缘膜上形成的所述多个硅化物层。

    Liquid jet recording head
    29.
    发明授权
    Liquid jet recording head 失效
    液体喷射记录头

    公开(公告)号：US4897674A

    公开(公告)日：1990-01-30

    申请号：US256119

    申请日：1988-10-11

    申请人： Shinichi Hirasawa

    发明人： Shinichi Hirasawa

    IPC分类号： B41J2/045 ,  B41J2/055 ,  B41J2/14 ,  B41J2/16

    CPC分类号： B41J2/1632 ,  B41J2/1404 ,  B41J2/1604 ,  B41J2/1623 ,  B41J2/1631 ,  B41J2002/14403

    摘要： A liquid jet recording head having orifices for discharging liquid droplets therefrom, a liquid chamber for retaining liquid therein, and liquid flow paths connecting the orifices to the liquid chamber. The cross-sectional area of the flow paths gradually decreases from the liquid chamber toward the orifices. Also provided are an energy generating portion in the liquid flow paths and generating energy to be impared to the liquid, and small walls provided upstream of the energy generating portion, whereby the flow of the liquid from the liquid chamber to the energy generating portion is suppressed.

    摘要翻译： 一种液体喷射记录头，其具有用于从其中排出液滴的孔口，用于将液体保持在其中的液体室以及将孔口连接到液体室的液体流动路径。 流路的横截面积从液体室朝向孔逐渐减小。 还提供了液体流路中的能量产生部分，并且产生能够被液体流动的能量，以及设置在能量产生部分上游的小壁，从而液体从液体室流向能量产生部分的流动被抑制 。