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    Method for manufacturing semiconductor device
    3.
    发明申请
    Method for manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US20070224760A1

    公开(公告)日：2007-09-27

    申请号：US11708532

    申请日：2007-02-21

    申请人： Yukiteru Matsui ,  Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Takeshi Nishioka ,  Hiroyuki Yano

    发明人： Yukiteru Matsui ,  Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Takeshi Nishioka ,  Hiroyuki Yano

    IPC分类号： H01L21/336

    CPC分类号： H01L27/11543 ,  C09G1/02 ,  H01L21/3212 ,  H01L21/7684 ,  H01L27/11526

    摘要： A method for manufacturing a semiconductor device is provided. The method includes successively forming a first silicon film and a mask film above a semiconductor substrate through a gate insulating film, forming a plurality of trenches in the first silicon film and in the mask film to a depth to reach the semiconductor substrate, filling the plurality of trenches with the silicon oxide film, removing the mask film to expose the first silicon film existing between the silicon oxide films, selectively growing a second silicon film on the first silicon film, planarizing the second silicon film using an alkaline slurry exhibiting a pH of 13 or less and containing abrasive grains and a cationic surfactant, thereby obtaining a floating gate electrode film comprising the first and second silicon films, forming an interelectrode insulating film on the entire surface, and forming a control gate electrode film on the interelectrode insulating film.

    摘要翻译： 提供一种制造半导体器件的方法。 该方法包括通过栅极绝缘膜在半导体衬底上连续地形成第一硅膜和掩模膜，在第一硅膜和掩模膜中形成多个沟槽到达半导体衬底的深度，填充多个 的沟槽，去除掩模膜以暴露存在于氧化硅膜之间的第一硅膜，选择性地生长第一硅膜上的第二硅膜，使用表现出pH为 13以下，含有磨粒和阳离子性表面活性剂，从而得到包含第一和第二硅膜的浮栅电极膜，在整个表面上形成电极间绝缘膜，并在电极间绝缘膜上形成控制栅极电极膜。

    Method for manufacturing semiconductor device
    4.
    发明授权
    Method for manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US07416942B2

    公开(公告)日：2008-08-26

    申请号：US11708532

    申请日：2007-02-21

    申请人： Yukiteru Matsui ,  Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Takeshi Nishioka ,  Hiroyuki Yano

    发明人： Yukiteru Matsui ,  Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Takeshi Nishioka ,  Hiroyuki Yano

    IPC分类号： H01L21/336 ,  H01L21/8238 ,  H01L21/461

    CPC分类号： H01L27/11543 ,  C09G1/02 ,  H01L21/3212 ,  H01L21/7684 ,  H01L27/11526

    摘要： A method for manufacturing a semiconductor device is provided. The method includes successively forming a first silicon film and a mask film above a semiconductor substrate through a gate insulating film, forming a plurality of trenches in the first silicon film and in the mask film to a depth to reach the semiconductor substrate, filling the plurality of trenches with the silicon oxide film, removing the mask film to expose the first silicon film existing between the silicon oxide films, selectively growing a second silicon film on the first silicon film, planarizing the second silicon film using an alkaline slurry exhibiting a pH of 13 or less and containing abrasive grains and a cationic surfactant, thereby obtaining a floating gate electrode film comprising the first and second silicon films, forming an interelectrode insulating film on the entire surface, and forming a control gate electrode film on the interelectrode insulating film.

    摘要翻译： 提供一种制造半导体器件的方法。 该方法包括通过栅极绝缘膜在半导体衬底上连续地形成第一硅膜和掩模膜，在第一硅膜和掩模膜中形成多个沟槽到达半导体衬底的深度，填充多个 的沟槽，去除掩模膜以暴露存在于氧化硅膜之间的第一硅膜，选择性地生长第一硅膜上的第二硅膜，使用表现出pH为 13以下，含有磨粒和阳离子性表面活性剂，从而得到包含第一和第二硅膜的浮栅电极膜，在整个表面上形成电极间绝缘膜，并在电极间绝缘膜上形成控制栅极电极膜。

    Methods for manufacturing semiconductor devices
    5.
    发明申请
    Methods for manufacturing semiconductor devices 审中-公开
    制造半导体器件的方法

    公开(公告)号：US20070111433A1

    公开(公告)日：2007-05-17

    申请号：US11594726

    申请日：2006-11-09

    申请人： Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Yukiteru Matsui ,  Takeshi Nishioka ,  Hiroyuki Yano

    发明人： Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Yukiteru Matsui ,  Takeshi Nishioka ,  Hiroyuki Yano

    IPC分类号： H01L21/8242

    CPC分类号： H01L27/105 ,  H01L27/11526 ,  H01L27/11543 ,  H01L29/40114 ,  H01L29/66825

    摘要： A method for manufacturing a semiconductor device comprises forming a first silicon layer above a semiconductor substrate; forming a stopper layer on said first silicon layer; partially removing said stopper layer and said first silicon layer above said semiconductor substrate to form a plurality of trenches; forming an insulating layer on said stopper layer with inside of said trenches; partially removing said insulating layer to expose said stopper layer; after partially removing said insulating layer, removing said stopper layer to expose said first silicon layer; selectively growing second silicon layer on said exposed first silicon layer; nonselectively growing a third silicon layer on said second silicon layer; and polishing at least a surface of said third silicon layer by performing chemical mechanical polishing.

    摘要翻译： 一种制造半导体器件的方法包括在半导体衬底上形成第一硅层; 在所述第一硅层上形成阻挡层; 部分地去除所述半导体衬底之上的所述阻挡层和所述第一硅层以形成多个沟槽; 在所述沟槽的内部在所述阻挡层上形成绝缘层; 部分地去除所述绝缘层以暴露所述阻挡层; 在部分地去除所述绝缘层之后，去除所述阻挡层以露出所述第一硅层; 在所述暴露的第一硅层上选择性地生长第二硅层; 在所述第二硅层上非选择地生长第三硅层; 以及通过进行化学机械抛光来抛光所述第三硅层的至少一个表面。

    Liquid jet recording head and recording system incorporating the same
    8.
    发明授权
    Liquid jet recording head and recording system incorporating the same 失效
    液体喷射记录头和包含其的记录系统

    公开(公告)号：US4847639A

    公开(公告)日：1989-07-11

    申请号：US242283

    申请日：1988-09-09

    申请人： Masao Sugata ,  Tatsuo Masaki, deceased ,  Shinichi Hirasawa ,  Hirokazu Komuro ,  Yasuhiro Yano

    发明人： Masao Sugata ,  Tatsuo Masaki, deceased ,  Shinichi Hirasawa ,  Hirokazu Komuro ,  Yasuhiro Yano

    IPC分类号： B41J2/14

    CPC分类号： B41J2/14129 ,  B41J2202/03 ,  Y10T428/30

    摘要： A liquid jet recording head such as an ink jet recording head has liquid passages having liquid outlets through which a recording liquid is discharged in the form of jet of droplet, and electro-thermal transducers for generating heat which produce energy for discharging the liquid in response to inputted electric signals. The electro-thermal transducer has a heat-generating resistance layer which is made of an amorphous material containing halogen atoms and hydrogen atoms in a matrix of carbon atoms. Disclosed also is a recording system incorporating this recording head. The amorphous material can further contain silicon atoms and/or germanium atoms.

    摘要翻译： 诸如喷墨记录头的液体喷射记录头具有液体通道，液体通道具有液体出口，以液滴的形式喷射记录液体;以及电热换能器，用于产生用于响应地产生排出液体的能量的热量 输入电信号。 电热换能器具有由在碳原子基体中含有卤素原子和氢原子的无定形材料制成的发热电阻层。 还公开了一种结合该记录头的记录系统。 无定形材料可以进一步含有硅原子和/或锗原子。