公开(公告)号：US20090239373A1

公开(公告)日：2009-09-24

申请号：US12477332

申请日：2009-06-03

申请人： Hirotaka Shida ,  Yukiteru Matsui ,  Atsushi Shigeta ,  Shinichi Hirasawa ,  Hirokazu Kato ,  Masako Kinoshita ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Hirotaka Shida ,  Yukiteru Matsui ,  Atsushi Shigeta ,  Shinichi Hirasawa ,  Hirokazu Kato ,  Masako Kinoshita ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/768 ,  H01L21/306

CPC分类号： H01L21/7681 ,  C09G1/02 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/76835

摘要： A chemical mechanical polishing method comprises polishing an organic film using a slurry including polymer particles having a surface functional group and a water-soluble polymer.

摘要翻译： 化学机械抛光方法包括使用包含具有表面官能团的聚合物颗粒和水溶性聚合物的浆料来抛光有机膜。

公开(公告)号：US08119517B2

公开(公告)日：2012-02-21

申请号：US12477332

申请日：2009-06-03

申请人： Hirotaka Shida ,  Yukiteru Matsui ,  Atsushi Shigeta ,  Shinichi Hirasawa ,  Hirokazu Kato ,  Masako Kinoshita ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Hirotaka Shida ,  Yukiteru Matsui ,  Atsushi Shigeta ,  Shinichi Hirasawa ,  Hirokazu Kato ,  Masako Kinoshita ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/4763 ,  H01L21/461

CPC分类号： H01L21/7681 ,  C09G1/02 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/76835

摘要： A chemical mechanical polishing method comprises polishing an organic film using a slurry including polymer particles having a surface functional group and a water-soluble polymer.

摘要翻译： 化学机械抛光方法包括使用包含具有表面官能团的聚合物颗粒和水溶性聚合物的浆料来抛光有机膜。

公开(公告)号：US07985685B2

公开(公告)日：2011-07-26

申请号：US12262439

申请日：2008-10-31

申请人： Yukiteru Matsui ,  Masako Kinoshita ,  Seiro Miyoshi ,  Yoshikuni Tateyama ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Yukiteru Matsui ,  Masako Kinoshita ,  Seiro Miyoshi ,  Yoshikuni Tateyama ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/311

CPC分类号： H01L21/02118 ,  C09G1/02 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76835

摘要： A method for manufacturing a semiconductor device is provided, the method includes forming a coated film by coating a solution containing a solvent and an organic component above an insulating film located above a semiconductor substrate and having a recess, baking the coated film at a first temperature which does not accomplish cross-linking of the organic component to obtain an organic film precursor, polishing the organic film precursor using a slurry containing resin particles to leave the organic film precursor in the recess, baking the left organic film precursor at a second temperature which is higher than the first temperature to remove the solvent to obtain a first organic film embedded in the recess, forming a second organic film on the insulating film, thereby obtaining an underlying film, forming an intermediate layer and a resist film successively above the underlying film, and subjecting the resist film to patterning exposure.

摘要翻译： 提供了一种制造半导体器件的方法，该方法包括通过将含有溶剂和有机组分的溶液涂覆在位于半导体衬底上方并具有凹槽的绝缘膜上的溶液形成涂覆膜，在第一温度下烘烤该涂膜 其不能实现有机成分的交联以获得有机膜前体，使用含有树脂颗粒的浆料将有机膜前体抛光以在凹槽中离开有机膜前体，在第二温度下烘烤左有机膜前体 高于第一温度以除去溶剂以获得嵌入在凹部中的第一有机膜，在绝缘膜上形成第二有机膜，从而获得下面的膜，在基底膜上连续形成中间层和抗蚀剂膜 并对抗蚀剂膜进行图案曝光。

公开(公告)号：US20090124076A1

公开(公告)日：2009-05-14

申请号：US12262439

申请日：2008-10-31

申请人： Yukiteru Matsui ,  Masako Kinoshita ,  Seiro Miyoshi ,  Yoshikuni Tateyama ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Yukiteru Matsui ,  Masako Kinoshita ,  Seiro Miyoshi ,  Yoshikuni Tateyama ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/4763

CPC分类号： H01L21/02118 ,  C09G1/02 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76835

摘要： A method for manufacturing a semiconductor device is provided, the method includes forming a coated film by coating a solution containing a solvent and an organic component above an insulating film located above a semiconductor substrate and having a recess, baking the coated film at a first temperature which does not accomplish cross-linking of the organic component to obtain an organic film precursor, polishing the organic film precursor using a slurry containing resin particles to leave the organic film precursor in the recess, baking the left organic film precursor at a second temperature which is higher than the first temperature to remove the solvent to obtain a first organic film embedded in the recess, forming a second organic film on the insulating film, thereby obtaining an underlying film, forming an intermediate layer and a resist film successively above the underlying film, and subjecting the resist film to patterning exposure.

摘要翻译： 提供了一种制造半导体器件的方法，该方法包括通过将含有溶剂和有机组分的溶液涂覆在位于半导体衬底上方并具有凹槽的绝缘膜上的溶液形成涂覆膜，在第一温度下烘烤该涂膜 其不能实现有机成分的交联以获得有机膜前体，使用含有树脂颗粒的浆料将有机膜前体抛光以在凹槽中离开有机膜前体，在第二温度下烘烤左有机膜前体 高于第一温度以除去溶剂以获得嵌入在凹部中的第一有机膜，在绝缘膜上形成第二有机膜，从而获得下面的膜，在基底膜上连续形成中间层和抗蚀剂膜 并对抗蚀剂膜进行图案曝光。