摘要:
A compound represented by the formula (I): wherein Ar is an optionally substituted aromatic ring; Xa, Xc, Ya, Yc, Z1 and Z2 are each a bond, O, S, —CO—, —CS—, —CR3(OR4)—, —NR5—, —SO—, —SO2—, —CONR6— or —NR6CO— (wherein R3, R4, R5 and R6 are as defined in the specification); Xb and Yb are each a bond or a divalent hydrocarbon group having 1 to 20 carbon atoms; R1 is an optionally substituted hydrocarbon group; ring A is an optionally further substituted aromatic ring, provided that the ring should not be benzimidazole; n is an integer of 1 to 8; ring B is an optionally further substituted aromatic ring, provided that the ring should not be oxazole; W is a divalent saturated hydrocarbon group having 1 to 20 carbon atoms; and R2 is —OR8 or —NR9R10 (wherein R8, R9 and R10 are as defined in the specification) or a salt thereof, is useful as an agent for the prophylaxis or treatment of diabetes and the like.
摘要:
The invention has for its objects to provide a multilayer thin film comprising a ferroelectric thin film preferentially (001) oriented on an Si substrate, its fabrication process, and an electron device. To attain these object, the invention provides a multilayer thin film formed on a substrate by epitaxial growth, which comprises a buffer layer comprising an oxide and a ferroelectric thin film, with a metal thin film and an oxide thin film formed in this order between the buffer layer and the ferroelectric thin film, its fabrication process, and an electron device.
摘要:
In the present invention, provided are i) an encapsulant epoxy resin composition comprising an epoxy resin, a curing agent, a non-conductive carbon and an inorganic filler, and ii) an electronic device having an encapsulating member comprising a cured product of this composition.
摘要:
A thin film piezoelectric device has an epitaxial metal thin film (4) on a silicon substrate (2) and a PZT thin film (5) on the metal thin film, the PZT thin film (5) having a Ti/(Ti+Zr) atomic ratio between 0.65 and 0.90. A film bulk acoustic resonator having an extremely broad band is realized.
摘要:
A surface acoustic wave device comprises a piezoelectric substrate of lithium tetraborate single crystal, and a metal film formed on the surface of the piezoelectric substrate for exciting, receiving, reflecting and/or propagating surface acoustic waves, the metal film being so formed that a cut angle of the surface of the piezoelectric substrate and propagation direction of the surface acoustic wave are an Eulerian angle representation of (0.degree.-45.degree., 30.degree.-90.degree., 40.degree.-90.degree.) and directions equivalent thereto, the surface acoustic wave having higher propagation velocity than Rayleigh waves and leaky waves, and a characteristic of radiating part of energy of the surface acoustic wave into the piezoelectric surface while propagating.