Arylalkanoic Acid Derivative
    21.
    发明申请
    Arylalkanoic Acid Derivative 审中-公开
    芳基链烷酸衍生物

    公开(公告)号:US20080051418A1

    公开(公告)日:2008-02-28

    申请号:US11791374

    申请日:2005-11-25

    摘要: A compound represented by the formula (I): wherein Ar is an optionally substituted aromatic ring; Xa, Xc, Ya, Yc, Z1 and Z2 are each a bond, O, S, —CO—, —CS—, —CR3(OR4)—, —NR5—, —SO—, —SO2—, —CONR6— or —NR6CO— (wherein R3, R4, R5 and R6 are as defined in the specification); Xb and Yb are each a bond or a divalent hydrocarbon group having 1 to 20 carbon atoms; R1 is an optionally substituted hydrocarbon group; ring A is an optionally further substituted aromatic ring, provided that the ring should not be benzimidazole; n is an integer of 1 to 8; ring B is an optionally further substituted aromatic ring, provided that the ring should not be oxazole; W is a divalent saturated hydrocarbon group having 1 to 20 carbon atoms; and R2 is —OR8 or —NR9R10 (wherein R8, R9 and R10 are as defined in the specification) or a salt thereof, is useful as an agent for the prophylaxis or treatment of diabetes and the like.

    摘要翻译: 由式(I)表示的化合物:其中Ar为任选取代的芳环; Xa,Xc,Ya,Yc,Z 1和Z 2各自为键,O,S,-CO-,-CS-,-CR 3 (OR 4) - , - -NR 5 - , - SO - , - SO 2 - , - CONR 6 - 或-NR 6 CO-(其中R 3,R 4,R 4,R 5, 和R 6如说明书中所定义); Xb和Yb各自为键或碳原子数为1〜20的二价烃基; R 1是任选取代的烃基; 环A是任选进一步取代的芳环,条件是该环不应为苯并咪唑; n为1〜8的整数, 环B是任选进一步取代的芳环,条件是该环不应为恶唑; W是碳原子数为1〜20的二价饱和烃基; 和R 2是-OR 8或-NR 9 R 10(其中R 8) 其中R 9,R 9和R 10如说明书中所定义)或其盐可用作预防或治疗糖尿病等的药剂。

    Multilayer thin film and its fabrication process as well as electron device
    22.
    发明授权
    Multilayer thin film and its fabrication process as well as electron device 有权
    多层薄膜及其制造工艺以及电子器件

    公开(公告)号:US06709776B2

    公开(公告)日:2004-03-23

    申请号:US09842805

    申请日:2001-04-27

    IPC分类号: B32B900

    摘要: The invention has for its objects to provide a multilayer thin film comprising a ferroelectric thin film preferentially (001) oriented on an Si substrate, its fabrication process, and an electron device. To attain these object, the invention provides a multilayer thin film formed on a substrate by epitaxial growth, which comprises a buffer layer comprising an oxide and a ferroelectric thin film, with a metal thin film and an oxide thin film formed in this order between the buffer layer and the ferroelectric thin film, its fabrication process, and an electron device.

    摘要翻译: 本发明的目的是提供一种多层薄膜,其包括在Si衬底上取向的优先(001)铁电薄膜,其制造工艺和电子器件。 为了实现这些目的,本发明提供了一种通过外延生长在基板上形成的多层薄膜,其包括由氧化物和铁电薄膜构成的缓冲层,金属薄膜和氧化物薄膜之间依次形成 缓冲层和铁电薄膜,其制造工艺和电子器件。

    Surface acoustic wave device
    25.
    发明授权
    Surface acoustic wave device 失效
    表面声波装置

    公开(公告)号:US5434465A

    公开(公告)日:1995-07-18

    申请号:US236015

    申请日:1994-05-02

    IPC分类号: H03H9/25 H03H9/02 H01L41/08

    CPC分类号: H03H9/02543

    摘要: A surface acoustic wave device comprises a piezoelectric substrate of lithium tetraborate single crystal, and a metal film formed on the surface of the piezoelectric substrate for exciting, receiving, reflecting and/or propagating surface acoustic waves, the metal film being so formed that a cut angle of the surface of the piezoelectric substrate and propagation direction of the surface acoustic wave are an Eulerian angle representation of (0.degree.-45.degree., 30.degree.-90.degree., 40.degree.-90.degree.) and directions equivalent thereto, the surface acoustic wave having higher propagation velocity than Rayleigh waves and leaky waves, and a characteristic of radiating part of energy of the surface acoustic wave into the piezoelectric surface while propagating.

    摘要翻译: 表面声波装置包括四硼酸锂单晶的压电基板和形成在压电基板的表面上用于激发,接收,反射和/或传播表面声波的金属膜,金属膜被形成为切割 压电基板表面的角度和表面声波的传播方向是(0°-45°,30°-90°,40°-90°)和与其等效的方向的欧拉角表示,表面声波 具有比瑞利波和泄漏波更高的传播速度,以及在传播时将表面声波的能量的一部分辐射到压电表面中的特性。