公开(公告)号：US06709776B2

公开(公告)日：2004-03-23

申请号：US09842805

申请日：2001-04-27

申请人： Takao Noguchi ,  Yoshihiko Yano ,  Hisatoshi Saitou ,  Hidenori Abe

发明人： Takao Noguchi ,  Yoshihiko Yano ,  Hisatoshi Saitou ,  Hidenori Abe

IPC分类号： B32B900

CPC分类号： C30B23/02 ,  C30B25/02 ,  C30B29/22 ,  Y10T428/2495

摘要： The invention has for its objects to provide a multilayer thin film comprising a ferroelectric thin film preferentially (001) oriented on an Si substrate, its fabrication process, and an electron device. To attain these object, the invention provides a multilayer thin film formed on a substrate by epitaxial growth, which comprises a buffer layer comprising an oxide and a ferroelectric thin film, with a metal thin film and an oxide thin film formed in this order between the buffer layer and the ferroelectric thin film, its fabrication process, and an electron device.

摘要翻译： 本发明的目的是提供一种多层薄膜，其包括在Si衬底上取向的优先（001）铁电薄膜，其制造工艺和电子器件。 为了实现这些目的，本发明提供了一种通过外延生长在基板上形成的多层薄膜，其包括由氧化物和铁电薄膜构成的缓冲层，金属薄膜和氧化物薄膜之间依次形成 缓冲层和铁电薄膜，其制造工艺和电子器件。

公开(公告)号：US06198208B1

公开(公告)日：2001-03-06

申请号：US09558586

申请日：2000-04-26

申请人： Yoshihiko Yano ,  Takao Noguchi ,  Hidenori Abe ,  Hisatoshi Saitou

发明人： Yoshihiko Yano ,  Takao Noguchi ,  Hidenori Abe ,  Hisatoshi Saitou

IPC分类号： H01L4104

CPC分类号： H03H9/176 ,  H01L41/1876 ,  H01L41/316 ,  H03H3/04 ,  H03H9/0211 ,  H03H9/174 ,  Y10T428/3171

摘要： A thin film piezoelectric device has an epitaxial metal thin film (4) on a silicon substrate (2) and a PZT thin film (5) on the metal thin film, the PZT thin film (5) having a Ti/(Ti+Zr) atomic ratio between 0.65 and 0.90. A film bulk acoustic resonator having an extremely broad band is realized.

摘要翻译： 薄膜压电元件在金属薄膜上的硅衬底（2）和PZT薄膜（5）上具有外延金属薄膜（4），PZT薄膜（5）具有Ti /（Ti + Zr ）原子比在0.65和0.90之间。 实现了具有极宽带的薄膜体声波谐振器。

公开(公告)号：US07220995B2

公开(公告)日：2007-05-22

申请号：US10817907

申请日：2004-04-06

申请人： Takao Noguchi ,  Hisatoshi Saitou ,  Hidenori Abe

发明人： Takao Noguchi ,  Hisatoshi Saitou ,  Hidenori Abe

IPC分类号： H01L27/15

CPC分类号： H03H9/175 ,  B06B1/0644 ,  H01L41/319 ,  H03H3/02 ,  H03H9/02094 ,  H03H9/176

摘要： A substrate for an electronic device comprises a base, an adhesion film stacked on the base, and a conductor film stacked on the adhesion film. The adhesion film is a non-epitaxial film including a crystal having a wurtzite crystal structure. The electronic device comprises the substrate and a functional film having a specific function and disposed on the substrate.

摘要翻译： 电子器件用基板包括基材，层叠在基材上的粘合膜和层叠在粘合膜上的导体膜。 粘附膜是包括具有纤锌矿晶体结构的晶体的非外延膜。 电子装置包括基板和具有特定功能的功能膜并且设置在基板上。

公开(公告)号：US20050029629A1

公开(公告)日：2005-02-10

申请号：US10817907

申请日：2004-04-06

申请人： Takao Noguchi ,  Hisatoshi Saitou ,  Hidenori Abe

发明人： Takao Noguchi ,  Hisatoshi Saitou ,  Hidenori Abe

IPC分类号： H01L21/28 ,  B06B1/06 ,  H01L21/283 ,  H01L21/8246 ,  H01L27/105 ,  H01L41/09 ,  H01L41/187 ,  H01L41/22 ,  H01L41/29 ,  H01L41/319 ,  H03H3/02 ,  H03H9/02 ,  H03H9/17 ,  H01L29/00 ,  H01L21/44 ,  B05D3/06 ,  H01L31/036 ,  H01L21/4763

CPC分类号： H03H9/175 ,  B06B1/0644 ,  H01L41/319 ,  H03H3/02 ,  H03H9/02094 ,  H03H9/176

摘要： A substrate for an electronic device comprises a base, an adhesion film stacked on the base, and a conductor film stacked on the adhesion film. The adhesion film is a non-epitaxial film including a crystal having a wurtzite crystal structure. The electronic device comprises the substrate and a functional film having a specific function and disposed on the substrate.

摘要翻译： 电子器件用基板包括基材，层叠在基材上的粘合膜和层叠在粘合膜上的导体膜。 粘附膜是包括具有纤锌矿晶体结构的晶体的非外延膜。 电子装置包括基板和具有特定功能的功能膜并且设置在基板上。

公开(公告)号：US06855996B2

公开(公告)日：2005-02-15

申请号：US10650764

申请日：2003-08-29

申请人： Takao Noguchi ,  Hisatoshi Saitou ,  Hidenori Abe ,  Yoshinari Yamashita

发明人： Takao Noguchi ,  Hisatoshi Saitou ,  Hidenori Abe ,  Yoshinari Yamashita

IPC分类号： C30B29/68 ,  H01L21/20 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/365 ,  H01L29/04 ,  H01L41/08 ,  H01L41/09 ,  H01L41/18 ,  H01L41/22 ,  H01L41/29 ,  H01L41/316 ,  H01L41/319 ,  H01L41/39 ,  H03H3/02 ,  H03H9/17 ,  H01S3/19

CPC分类号： H03H3/02 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02609 ,  H01L21/2855 ,  H01L21/32051 ,  H01L29/045 ,  H01L41/0477 ,  H01L41/0815 ,  H01L41/29 ,  H01L41/316 ,  H01L41/319 ,  H01L2224/48091 ,  H03H9/02015 ,  H03H9/02133 ,  H03H9/174 ,  H03H9/176 ,  H01L2924/00014

摘要： An electronic device substrate structure including a substrate 2, a metal thin film 4 as a (111)-oriented film of a face-centered cubic structure or as a (0001)-oriented film of a hexagonal closest packed structure formed on the substrate 2, and a wurtzite type thin film 5 as a (0001)-oriented film of a wurtzite crystal structure formed on the metal thin film 4, wherein: each of the two thin films is a polycrystalline film containing at least two kinds of crystal grains different in direction of crystal orientation in the plane; when the metal thin film 4 is a (111)-oriented film, axes in the plane of the wurtzite type thin film 5 are parallel to axes in the plane of the metal thin film 4; and when the metal thin film 4 is a (0001)-oriented film, axes in the plane of the wurtzite type thin film 5 are parallel to axes in the plane of the metal thin film 4.

摘要翻译： 一种电子器件基板结构，其包括基板2，作为面心立方结构的（111）取向膜的金属薄膜4或形成在基板2上的作为（0001）取向的六方孔密堆积结构的膜 ，以及形成在金属薄膜4上的纤锌矿晶体结构的（0001）取向膜的纤锌矿型薄膜5，其中：两个薄膜中的每一个是含有至少两种不同晶粒的多晶薄膜 在平面中的晶体取向方向; 当金属薄膜4为（111）取向膜时，纤锌矿型薄膜5的平面中的<11-20>轴在金属薄膜4的平面上平行于<1-10>轴; 并且当金属薄膜4为（0001）取向膜时，纤锌矿型薄膜5的平面内的<11-20>轴在金属薄膜4的平面上平行于<11-20> 。

公开(公告)号：US06989723B2

公开(公告)日：2006-01-24

申请号：US10731157

申请日：2003-12-10

申请人： Eiju Komuro ,  Hisatoshi Saitou ,  Takao Noguchi ,  Hidenori Abe

发明人： Eiju Komuro ,  Hisatoshi Saitou ,  Takao Noguchi ,  Hidenori Abe

IPC分类号： H03H9/54 ,  H03H9/70

CPC分类号： H03H9/175 ,  H03H3/04 ,  H03H9/02102 ,  H03H9/02149 ,  H03H9/174 ,  H03H9/605 ,  H03H9/706 ,  H03H2003/0407

摘要： A piezoelectric resonant filter includes a group of series resonators and a group of parallel resonators for forming a ladder-type filter circuit. Each of the resonators has a piezoelectric thin film having piezoelectric characteristic, and lower and upper electrodes disposed on opposite surfaces of the piezoelectric thin film for applying an excitation voltage to the piezoelectric thin film. The group of the parallel resonators exhibits a low frequency side attenuation extremum in the filter whereas the group of the series resonators exhibits a high frequency side attenuation extremum in the filter. At least one of the group of the series resonators and the group of the parallel resonators has a temperature compensating layer for bringing the temperature coefficient of the resonant frequency close to zero.

摘要翻译： 压电谐振滤波器包括一组串联谐振器和一组用于形成梯形滤波器电路的并联谐振器。 每个谐振器具有压电薄膜，压电薄膜具有压电薄膜，并且压电薄膜的相对表面上设置有用于向压电薄膜施加激励电压的下电极和上电极。 并联谐振器组在滤波器中表现出低频侧衰减极值，而串联谐振器组在滤波器中表现出高频侧衰减极值。 串联谐振器组和并联谐振器组中的至少一个具有用于使共振频​​率的温度系数接近零的温度补偿层。

公开(公告)号：US07239067B2

公开(公告)日：2007-07-03

申请号：US10811812

申请日：2004-03-30

申请人： Eiju Komuro ,  Hisatoshi Saitou ,  Takao Noguchi ,  Masaaki Imura

发明人： Eiju Komuro ,  Hisatoshi Saitou ,  Takao Noguchi ,  Masaaki Imura

IPC分类号： H01L41/00 ,  H02N2/00 ,  H01B13/00

CPC分类号： H03H9/564 ,  H03H3/02

摘要： A method of manufacturing a piezoelectric thin film resonator forms, after forming a piezoelectric film on a substrate so as to cover a lower electrode formed on the substrate, an electrode material layer for forming an upper electrode above the piezoelectric film, forms a mask of a predetermined form on the electrode material layer, and then etches the electrode material layer to form the upper electrode. Before a step of forming the electrode material layer, a protective layer for protecting the piezoelectric film during etching of the electrode material layer is formed so as to cover at least a part of the piezoelectric film where the upper electrode is not formed, and the electrode material layer is then formed so as to cover the protective layer.

摘要翻译： 一种制造压电薄膜谐振器的方法，在基板上形成压电膜以覆盖形成在基板上的下电极之后，形成用于在压电膜上形成上电极的电极材料层，形成 在电极材料层上形成预定形状，然后蚀刻电极材料层以形成上部电极。 在形成电极材料层的步骤之前，形成用于在蚀刻电极材料层期间保护压电膜的保护层，以覆盖不形成上部电极的压电膜的至少一部分，并且电极 然后形成材料层以覆盖保护层。

公开(公告)号：US06258459B1

公开(公告)日：2001-07-10

申请号：US09300452

申请日：1999-04-28

申请人： Takao Noguchi ,  Yoshihiko Yano

发明人： Takao Noguchi ,  Yoshihiko Yano

IPC分类号： B32B904

CPC分类号： B32B15/04 ,  C30B23/02 ,  C30B29/32

摘要： The first object of the invention is to provide means that enables a perovskite oxide thin film having (100) orientation, (001) orientation or (111) orientation to be easily obtained, and the second object of the invention is to provide a multilayer thin film comprising a unidirectionally oriented metal thin film of good crystallinity. The multilayer thin film according to the first embodiment of the invention comprises a buffer layer and a perovskite oxide thin film present thereon. The interface between the buffer layer and the perovskite oxide thin film is made up of a {111} facet plane. Substantially parallel to the facet plane there is present a {110} face of a cubic, rhombohedral, tetragonal or orthorhombic crystal of the perovskite oxide thin film, a {101} face of the tetragonal or orthorhombic crystal or a {011} face of the orthorhombic crystal. The multilayer thin film according to the second embodiment of the invention comprises a metal thin film that is a cubic (100) unidirectionally oriented epitaxial film, and a buffer layer where a {111} facet plane is present on the interface of the buffer layer in contact with the metal thin film.

摘要翻译： 本发明的第一个目的是提供能够容易地获得具有（100）取向（001）取向或（111）取向的钙钛矿氧化物薄膜的方法，本发明的第二个目的是提供一种多层薄膜 膜包含具有良好结晶度的单向取向金属薄膜。 根据本发明第一实施方案的多层薄膜包含缓冲层和存在于其上的钙钛矿氧化物薄膜。 缓冲层与钙钛矿氧化物薄膜的界面由{111}面平面构成。 基本平行于面平面，存在钙钛矿氧化物薄膜的立方晶体，菱方晶，四方晶或正交晶体的{110}面，正方晶或正交晶体的{101}面或 正交晶体。 根据本发明的第二实施方式的多层薄膜包括作为立方体（100）单向取向外延膜的金属薄膜和在缓冲层的界面上存在{111}面平面的缓冲层 与金属薄膜接触。

公开(公告)号：US5919515A

公开(公告)日：1999-07-06

申请号：US855444

申请日：1997-05-13

申请人： Yoshihiko Yano ,  Takao Noguchi

发明人： Yoshihiko Yano ,  Takao Noguchi

IPC分类号： C30B29/22 ,  C23C14/00 ,  C23C14/02 ,  C23C14/08 ,  C30B23/02 ,  H01G4/33 ,  H01L21/283 ,  H01L21/8242 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792 ,  C23C14/24

CPC分类号： C23C14/08 ,  C23C14/0021 ,  C23C14/024 ,  C30B23/02 ,  C30B29/22

摘要： On a single crystal substrate such as silicon, a ferroelectric thin film having a YMnO.sub.3 hexagonal crystal structure, composed mainly of a rare earth element (inclusive of scandium and yttrium), manganese and oxygen, and c-plane oriented parallel to the substrate surface is formed, preferably with an epitaxial oxide film or conductive epitaxial film being interposed therebetween. It is suitable for gate type non-volatile memory devices having MFIS and MFMIS structures.

摘要翻译： 在诸如硅的单晶衬底上，主要由稀土元素（包括钪和钇）组成的具有YMnO 3六方晶体结构的铁电薄膜，锰和氧以及平行于衬底表面取向的c面是 形成，优选地具有外延氧化膜或导电外延膜之间。 适用于具有MFIS和MFMIS结构的门型非易失性存储器件。

公开(公告)号：US5955213A

公开(公告)日：1999-09-21

申请号：US524809

申请日：1995-09-07

申请人： Yoshihiko Yano ,  Takao Noguchi

发明人： Yoshihiko Yano ,  Takao Noguchi

IPC分类号： C30B29/22 ,  C23C14/00 ,  C23C14/02 ,  C23C14/08 ,  C30B23/02 ,  H01G4/33 ,  H01L21/283 ,  H01L21/8242 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792 ,  B32B17/00

CPC分类号： C23C14/08 ,  C23C14/0021 ,  C23C14/024 ,  C30B23/02 ,  C30B29/22

摘要： On a single crystal substrate such as silicon, a ferroelectric thin film having a YMnO.sub.3 hexagonal crystal structure, composed mainly of a rare earth element (inclusive of scandium and yttrium), manganese and oxygen, and c-plane oriented parallel to the substrate surface is formed, preferably with an epitaxial oxide film or conductive epitaxial film being interposed therebetween. It is suitable for gate type non-volatile memory devices having MFIS and MFMIS structures.

摘要翻译： 在诸如硅的单晶衬底上，主要由稀土元素（包括钪和钇）组成的具有YMnO 3六方晶体结构的铁电薄膜，锰和氧以及平行于衬底表面取向的c面是 形成，优选地具有外延氧化膜或导电外延膜之间。 适用于具有MFIS和MFMIS结构的门型非易失性存储器件。