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21.发明申请Marker structure for optical alignment of a substrate, a substrate including such a marker structure, an alignment method for aligning to such a marker structure, and a lithographic projection apparatus 失效用于基板的光学取向的标记结构，包括这种标记结构的基板，用于与这种标记结构对准的对准方法以及平版印刷设备公开(公告)号：US20080180668A1
公开(公告)日：2008-07-31
申请号：US12003377
申请日：2007-12-21
申请人： Richard Johannes Franciscus Van Haren , Paul Christiaan Hinnen , Sanjay Lalbahadoersing , Henry Megens , Maurits Van Der Schaar
发明人： Richard Johannes Franciscus Van Haren , Paul Christiaan Hinnen , Sanjay Lalbahadoersing , Henry Megens , Maurits Van Der Schaar
IPC分类号： G01J4/00
CPC分类号： G03F9/7084 , G03F9/7046 , G03F9/7049 , G03F9/7076 , G03F9/7088 , G03F9/7092
摘要： A marker structure on a substrate for optical alignment of the substrate includes a plurality of first structural elements and a plurality of second structural elements. In use, the marker structure allows the optical alignment based upon providing at least one light beam directed on the marker structure, detecting light received from the marker structure at a sensor, and determining alignment information from the detected light, the alignment information comprising information relating a position of the substrate to the sensor.
摘要翻译： 用于基板的光学取向的基板上的标记结构包括多个第一结构元件和多个第二结构元件。 在使用中，标记结构允许基于提供指向标记结构的至少一个光束的光学对准，在传感器处检测从标记结构接收的光，以及从检测到的光确定对准信息，对准信息包括与 基板到传感器的位置。
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22.发明授权Lithographic apparatus and device manufacturing method with double exposure overlay control 有权平版印刷设备和双重曝光覆盖控制的设备制造方法公开(公告)号：US07687209B2
公开(公告)日：2010-03-30
申请号：US11384835
申请日：2006-03-21
CPC分类号： G03F7/0035 , G03B27/42 , G03F7/70466 , G03F9/7084
摘要： A device manufacturing method includes a transfer of a pattern from a patterning device onto a substrate. The device manufacturing method further includes transferring a pattern of a main mark to a base layer for forming an alignment mark; depositing a pattern receiving layer on the base layer; in a first lithographic process, aligning, by using the main mark, a first mask that includes a first pattern and a local mark pattern, and transferring the first pattern and the local mark pattern to the pattern receiving layer; aligning, by using the local mark pattern, a second mask including a second pattern relative to the pattern receiving layer; andin a second lithographic process, transferring the second pattern to the pattern receiving layer; the first and second patterns being configured to form an assembled pattern.
摘要翻译： 一种器件制造方法包括将图案从图案形成装置转移到衬底上。 所述器件制造方法还包括将主标记的图案转印到用于形成对准标记的基底层; 在基层上沉积图案接收层; 在第一光刻工艺中，通过使用主标记对准包括第一图案和局部标记图案的第一掩模，并将第一图案和局部标记图案转印到图案接收层; 通过使用本地标记图案，相对于图案接收层对准包括第二图案的第二掩模; 并在第二光刻工艺中将第二图案转印到图案接收层; 第一和第二图案被配置成形成组装图案。
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23.发明授权Method for producing a marker on a substrate, lithographic apparatus and device manufacturing method 失效在基板上制造标记的方法，光刻设备和器件制造方法公开(公告)号：US07476490B2
公开(公告)日：2009-01-13
申请号：US10875605
申请日：2004-06-25
申请人： Maurits Van Der Schaar , Jacobus Burghoorn , Richard Johannes Franciscus Van Haren , Everhardus Cornelis Mos , Rene Monshouwer
发明人： Maurits Van Der Schaar , Jacobus Burghoorn , Richard Johannes Franciscus Van Haren , Everhardus Cornelis Mos , Rene Monshouwer
IPC分类号： G03C9/00
CPC分类号： G03F7/105 , G03F7/168 , G03F9/708 , G03F9/7084
摘要： A method of producing a marker on a substrate includes projecting a patterned beam on a layer of resist disposed on a substrate in a lithographic apparatus to create a latent marker; and locally heating the substrate at the marker location in the lithographic apparatus to transform the latent marker into a detectable marker.
摘要翻译： 在衬底上产生标记的方法包括将图案化的光束投影到设置在光刻设备中的衬底的抗蚀剂层上以产生潜在标记; 并且在光刻设备中的标记位置处局部加热衬底，以将潜在标记转变成可检测标记。
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24.发明授权公开(公告)号：US07916276B2
公开(公告)日：2011-03-29
申请号：US12705050
申请日：2010-02-12
IPC分类号： G03F7/20 , H01L21/027
CPC分类号： G03F7/0035 , G03B27/42 , G03F7/70466 , G03F9/7084
摘要： A device manufacturing method includes a transfer of a pattern from a patterning device onto a substrate. The device manufacturing method further includes transferring a pattern of a main mark to a base layer for forming an alignment mark; depositing a pattern receiving layer on the base layer; in a first lithographic process, aligning, by using the main mark, a first mask that includes a first pattern and a local mark pattern, and transferring the first pattern and the local mark pattern to the pattern receiving layer; aligning, by using the local mark pattern, a second mask including a second pattern relative to the pattern receiving layer; andin a second lithographic process, transferring the second pattern to the pattern receiving layer; the first and second patterns being configured to form an assembled pattern.
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公开(公告)号：US07897058B2
公开(公告)日：2011-03-01
申请号：US11435296
申请日：2006-05-17
申请人： Richard Johannes Franciscus Van Haren , Maurits Van Der Schaar , Ewoud Vreugdenhil , Harry Sewell
发明人： Richard Johannes Franciscus Van Haren , Maurits Van Der Schaar , Ewoud Vreugdenhil , Harry Sewell
CPC分类号： H01L21/76816 , H01L21/0337 , H01L21/0338 , H01L21/31144
摘要： A method of forming features, e.g. contact holes, at a higher density than is possible with conventional lithographic techniques involves forming an array of sacrificial positive features, conformally depositing a sacrificial layer so that negative features are formed interleaved with the positive features, directionally etching the sacrificial layer and removing the sacrificial features. The result is an array of holes at a higher density than the original sacrificial features. These may then be transferred into the underlying substrate using a desired process. Also, the method may be repeated to create arrays at even higher densities.
摘要翻译： 形成特征的方法，例如 以比常规光刻技术更高的密度接触孔包括形成牺牲性特征阵列，从而保形地沉积牺牲层，使得负特征与正特征交错形成，定向蚀刻牺牲层并去除牺牲特征 。 结果是以比原始牺牲特征更高的密度的孔阵列。 然后可以使用所需的方法将这些物质转移到下面的基底中。 此外，可以重复该方法以以更高的密度创建阵列。
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公开(公告)号：US07460231B2
公开(公告)日：2008-12-02
申请号：US11389494
申请日：2006-03-27
IPC分类号： G01B11/00
CPC分类号： G03F9/7049 , G03F9/7015 , G03F9/7088
摘要： An alignment tool for a lithographic apparatus illuminates an alignment mark on a substrate with an alignment beam and measures the reflected spectrum. The reflected spectrum is compared with a reference mark to determine any misalignment. A blazed sub-wavelength grating is used to deflect the sub-beams created by diffracting the alignment beam from the alignment mark onto the reference mark.
摘要翻译： 用于光刻设备的对准工具用对准光照射衬底上的对准标记并测量反射光谱。 将反射光谱与参考标记进行比较，以确定任何未对准。 使用闪耀的亚波长光栅来将通过将对准光束从对准标记衍射衍射到参考标记而产生的子光束偏转。
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27.发明授权Method for producing a marker on a substrate, lithographic apparatus and device manufacturing method 失效在基板上制造标记物的方法，光刻设备和器件制造方法公开(公告)号：US08264664B2
公开(公告)日：2012-09-11
申请号：US12269390
申请日：2008-11-12
申请人： Maurits Van Der Schaar , Jacobus Burghoorn , Richard Johannes Franciscus Van Haren , Everhardus Cornelis Mos , Rene Monshouwer
发明人： Maurits Van Der Schaar , Jacobus Burghoorn , Richard Johannes Franciscus Van Haren , Everhardus Cornelis Mos , Rene Monshouwer
CPC分类号： G03F7/105 , G03F7/168 , G03F9/708 , G03F9/7084
摘要： A method of producing a marker on a substrate includes projecting a patterned beam on a layer of resist disposed on a substrate in a lithographic apparatus to create a latent marker; and locally heating the substrate at the marker location in the lithographic apparatus to transform the latent marker into a detectable marker.
摘要翻译： 在衬底上产生标记的方法包括将图案化的光束投影到设置在光刻设备中的衬底的抗蚀剂层上以产生潜在标记; 并且在光刻设备中的标记位置处局部加热衬底，以将潜在标记转变成可检测标记。
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28.发明授权Method of forming a marker, substrate having a marker and device manufacturing method 有权形成标记物的方法，具有标记物的器件制造方法公开(公告)号：US08252491B2
公开(公告)日：2012-08-28
申请号：US12619813
申请日：2009-11-17
CPC分类号： H01L23/544 , G03F7/70633 , G03F9/7076 , G03F9/708 , G03F9/7084 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A marker, for example an alignment marker or an overlay marker is formed in two steps. First, a pattern of two chemically distinct feature types having a pitch comparable to product features is formed. This pattern is then masked by resist in the form of the desired marker, which has a larger pitch than the pattern. Finally, one of the two feature types is selectively etched in the open areas. The result is a marker with a large pitch suitable to be read with long wavelength radiation but the edges of the features are defined in an exposure step having a pitch comparable to the product features.
摘要翻译： 标记，例如对准标记或覆盖标记在两个步骤中形成。 首先，形成具有与产品特征相当的间距的两种化学不同特征类型的图案。 然后，该图案以所需标记的形式被抗蚀剂掩蔽，所述标记具有比图案更大的间距。 最后，两个特征类型中的一个在开放区域中被有选择地蚀刻。 结果是具有适合于用长波长辐射读取的大间距的标记，但是特征的边缘在具有与产品特征相当的间距的曝光步骤中限定。
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29.发明授权Marker structure for optical alignment of a substrate, a substrate including such a marker structure, an alignment method for aligning to such a marker structure, and a lithographic projection apparatus 失效用于基板的光学取向的标记结构，包括这种标记结构的基板，用于与这种标记结构对准的对准方法以及平版印刷设备公开(公告)号：US07619738B2
公开(公告)日：2009-11-17
申请号：US12003377
申请日：2007-12-21
申请人： Richard Johannes Franciscus Van Haren , Paul Christiaan Hinnen , Sanjay Lalbahadoersing , Henry Megens , Maurits Van Der Schaar
发明人： Richard Johannes Franciscus Van Haren , Paul Christiaan Hinnen , Sanjay Lalbahadoersing , Henry Megens , Maurits Van Der Schaar
CPC分类号： G03F9/7084 , G03F9/7046 , G03F9/7049 , G03F9/7076 , G03F9/7088 , G03F9/7092
摘要： A marker structure on a substrate for optical alignment of the substrate includes a plurality of first structural elements and a plurality of second structural elements. In use, the marker structure allows the optical alignment based upon providing at least one light beam directed on the marker structure, detecting light received from the marker structure at a sensor, and determining alignment information from the detected light, the alignment information comprising information relating a position of the substrate to the sensor.
摘要翻译： 用于基板的光学取向的基板上的标记结构包括多个第一结构元件和多个第二结构元件。 在使用中，标记结构允许基于提供指向标记结构的至少一个光束的光学对准，在传感器处检测从标记结构接收的光，以及从检测到的光确定对准信息，对准信息包括与 基板到传感器的位置。
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30.发明授权Lithographic apparatus and device manufacturing method with double exposure overlay control 有权平版印刷设备和双重曝光覆盖控制的设备制造方法公开(公告)号：US08029953B2
公开(公告)日：2011-10-04
申请号：US13029749
申请日：2011-02-17
CPC分类号： G03F7/0035 , G03B27/42 , G03F7/70466 , G03F9/7084
摘要： A device manufacturing method includes a transfer of a pattern from a patterning device onto a substrate. The device manufacturing method further includes transferring a pattern of a main mark to a base layer for forming an alignment mark; depositing a pattern receiving layer on the base layer; in a first lithographic process, aligning, by using the main mark, a first mask that includes a first pattern and a local mark pattern, and transferring the first pattern and the local mark pattern to the pattern receiving layer; aligning, by using the local mark pattern, a second mask including a second pattern relative to the pattern receiving layer; and in a second lithographic process, transferring the second pattern to the pattern receiving layer; the first and second patterns being configured to form an assembled pattern.
摘要翻译： 一种器件制造方法包括将图案从图案形成装置转移到衬底上。 所述器件制造方法还包括将主标记的图案转印到用于形成对准标记的基底层; 在基层上沉积图案接收层; 在第一光刻工艺中，通过使用主标记对准包括第一图案和局部标记图案的第一掩模，并将第一图案和局部标记图案转印到图案接收层; 通过使用本地标记图案，相对于图案接收层对准包括第二图案的第二掩模; 并在第二光刻工艺中将第二图案转印到图案接收层; 第一和第二图案被配置成形成组装图案。
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