公开(公告)号：US09418738B2

公开(公告)日：2016-08-16

申请号：US14591800

申请日：2015-01-07

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Hernan Castro

IPC: G11C7/22 ,  G11C13/00

CPC classification number: G11C13/0069 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0026 ,  G11C13/0028 ,  G11C13/004 ,  G11C13/0097 ,  G11C2013/0092 ,  G11C2213/77

Abstract: A memory circuit, including a memory array (such as a cross-point array), may include circuit elements that may function both as selection elements/drivers and de-selection elements/drivers. A selection/de-selection driver may be used to provide both a selection function as well as an operation function. The operation function may include providing sufficient currents and voltages for WRITE and/or READ operations in the memory array. When the de-selection path is used for providing the operation function, highly efficient cross-point implementations can be achieved. The operation function may be accomplished by circuit manipulation of a de-selection supply and/or de-selection elements.

公开(公告)号：US09390768B2

公开(公告)日：2016-07-12

申请号：US14318965

申请日：2014-06-30

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Jeremy Hirst ,  Hernan Castro ,  Stephen Tang

IPC: G11C7/00 ,  G11C7/06 ,  G11C7/12 ,  G11C13/00

CPC classification number: G11C13/004 ,  G11C7/06 ,  G11C7/12 ,  G11C13/0004 ,  G11C13/0038 ,  G11C13/0059 ,  G11C13/0061 ,  G11C13/0069 ,  G11C2013/0083 ,  G11C2207/063

Abstract: Example subject matter disclosed herein relates to apparatuses and/or devices, and/or various methods for use therein, in which an application of an electric potential to a circuit may be initiated and subsequently changed in response to a determination that a snapback event has occurred in a circuit. For example, a circuit may comprise a memory cell that may experience a snapback event as a result of an applied electric potential. In certain example implementations, a sense circuit may be provided which is responsive to a snapback event occurring in a memory cell to generate a feed back signal to initiate a change in an electric potential applied to the memory cell.

Abstract translation: 本文公开的示例主题涉及用于其中的装置和/或装置和/或其中使用的各种方法，其中响应于确定发生了快速恢复事件已经发生并随后改变电路的电位的应用 在电路中。 例如，电路可以包括作为所施加的电势的结果可能经历回跳事件的存储器单元。 在某些示例实现中，可以提供感测电路，其响应于在存储器单元中发生的快速恢复事件以产生反馈信号，以启动施加到存储器单元的电位的变化。

公开(公告)号：US20150055408A1

公开(公告)日：2015-02-26

申请号：US14528976

申请日：2014-10-30

Applicant: Micron Technology, Inc.

Inventor： Hernan Castro ,  Timothy C. Langtry ,  Richard Dodge ,  IIya Karpov

IPC: G11C13/00

CPC classification number: G11C13/004 ,  G11C13/0004 ,  G11C13/0061 ,  G11C13/0064 ,  G11C2013/0052

Abstract: Embodiments disclosed herein may relate to applying verify or read pulses for phase change memory and switch (PCMS) devices. The read pulses may be applied at a first voltage for a first period of time. A threshold event for the phase change memory cell may be detected during a sense window. The sense window may close after the expiration of the first period of time for which the read pulses are applied.

Abstract translation: 本文公开的实施例可以涉及为相变存储器和开关（PCMS）装置应用验证或读取脉冲。 读取脉冲可以以第一电压施加第一时间段。 可以在感测窗口期间检测相变存储器单元的阈值事件。 感应窗口可以在施加读取脉冲的第一时间段期满之后关闭。

公开(公告)号：US20140362650A1

公开(公告)日：2014-12-11

申请号：US13914170

申请日：2013-06-10

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Hernan Castro

IPC: G11C13/00

CPC classification number: G11C13/0069 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0026 ,  G11C13/0028 ,  G11C13/004 ,  G11C13/0097 ,  G11C2013/0092 ,  G11C2213/77

Abstract: A memory circuit, including a memory array (such as a cross-point array), may include circuit elements that may function both as selection elements/drivers and de-selection elements/drivers. A selection/de-selection driver may be used to provide both a selection function as well as an operation function. The operation function may include providing sufficient currents and voltages for WRITE and/or READ operations in the memory array. When the de-selection path is used for providing the operation function, highly efficient cross-point implementations can be achieved. The operation function may be accomplished by circuit manipulation of a de-selection supply and/or de-selection elements.

Abstract translation: 包括存储器阵列（诸如交叉点阵列）的存储器电路可以包括可以同时用作选择元件/驱动器和去选择元件/驱动器的电路元件。 选择/取消选择驱动器可以用于提供选择功能以及操作功能。 操作功能可以包括为存储器阵列中的写入和/或读取操作提供足够的电流和电压。 当选择路径用于提供操作功能时，可以实现高效的交叉点实现。 操作功能可以通过去选择电源和/或去选择元件的电路操作来实现。

公开(公告)号：US20140334237A1

公开(公告)日：2014-11-13

申请号：US14318965

申请日：2014-06-30

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Jeremy Hirst ,  Hernan Castro ,  Stephen Tang

IPC: G11C7/06 ,  G11C7/12

CPC classification number: G11C13/004 ,  G11C7/06 ,  G11C7/12 ,  G11C13/0004 ,  G11C13/0038 ,  G11C13/0059 ,  G11C13/0061 ,  G11C13/0069 ,  G11C2013/0083 ,  G11C2207/063

Abstract: Example subject matter disclosed herein relates to apparatuses and/or devices, and/or various methods for use therein, in which an application of an electric potential to a circuit may be initiated and subsequently changed in response to a determination that a snapback event has occurred in a circuit. For example, a circuit may comprise a memory cell that may experience a snapback event as a result of an applied electric potential. In certain example implementations, a sense circuit may be provided which is responsive to a snapback event occurring in a memory cell to generate a feed back signal to initiate a change in an electric potential applied to the memory cell.

Abstract translation: 本文公开的示例主题涉及用于其中的装置和/或装置和/或其中使用的各种方法，其中响应于确定发生了快速恢复事件已经发生并随后改变电路的电位的应用 在电路中。 例如，电路可以包括作为所施加的电势的结果可能经历回跳事件的存储器单元。 在某些示例实现中，可以提供感测电路，其响应于在存储器单元中发生的快速恢复事件以产生反馈信号，以启动施加到存储器单元的电位的变化。