公开(公告)号：US12189958B2

公开(公告)日：2025-01-07

申请号：US17898160

申请日：2022-08-29

Applicant: Micron Technology, Inc.

Inventor： Chulbum Kim ,  Sundararajan Sankaranarayanan ,  Xiangyu Tang ,  Dustin J. Carter

IPC: G06F3/06

Abstract: A memory sub-system includes a memory sub-system controller comprising a plurality of controller channels, one or more memory devices, each of which comprises a respective plurality of memory dies, and a channel switch circuit coupled between the plurality of the controller channels and a plurality of memory channels of the one or more memory devices, where each memory channel corresponds to a respective one of the plurality of memory dies of one of the memory devices, the channel switch circuit comprising command processing logic configured to: receive, from the memory sub-system controller, a plurality of channel mappings, each of which identifies a particular one of the controller channels and a particular one of the memory channels, and route data from each controller channel to a respective one of the memory channels that is associated with the controller channel by a respective one of the channel mappings.

公开(公告)号：US20240361929A1

公开(公告)日：2024-10-31

申请号：US18768806

申请日：2024-07-10

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Sundararajan Sankaranarayanan ,  Eric N. Lee

IPC: G06F3/06

CPC classification number: G06F3/0632 ,  G06F3/0604 ,  G06F3/0656 ,  G06F3/0659 ,  G06F3/0679

Abstract: A second read command to read second data from an array of memory cells is detected. An initial voltage to be applied to at least one wordline coupled to at least a subset of the array of memory cells is caused prior to releasing a first data associated with a first read command stored in a page buffer. The initial voltage to increase to a target value is caused. The page buffer to sense the second data from a bitline coupled to a page of the subset of the array of memory cells is caused. The sensed second data out of the bitline into the page buffer is read responsive to determining that the first data has been released from the page buffer.

公开(公告)号：US11922993B2

公开(公告)日：2024-03-05

申请号：US18095646

申请日：2023-01-11

Applicant: Micron Technology, Inc.

Inventor： Koichi Kawai ,  Sundararajan Sankaranarayanan ,  Eric Nien-Heng Lee ,  Akira Goda

IPC: G11C7/12 ,  G11C11/4074 ,  G11C11/408 ,  G11C11/4093 ,  G11C11/4094 ,  G11C11/56 ,  G11C16/26 ,  G11C16/34 ,  G11C16/04

CPC classification number: G11C11/4085 ,  G11C11/4074 ,  G11C11/4093 ,  G11C11/4094 ,  G11C11/5642 ,  G11C16/26 ,  G11C16/34 ,  G11C16/0483 ,  G11C2211/5642

Abstract: A device includes an array of memory cells with a first word line coupled to at least a subset of the array of memory cells and control logic coupled to the first word line. The control logic to detect, within a queue, a first read command to read first data from a first page of the subset and a second read command to read second data from a second page of the subset. The control logic is further to cause a voltage applied to the first word line to move to a target value. The control logic is further to cause a page buffer to sense the first data from a first bit line coupled to the first page and to sense the second data from a second bit line coupled to the second page. The control logic is further to cause the first word line to be discharged.

公开(公告)号：US20220366961A1

公开(公告)日：2022-11-17

申请号：US17318579

申请日：2021-05-12

Applicant: Micron Technology, Inc.

Inventor： Koichi Kawai ,  Sundararajan Sankaranarayanan ,  Eric Nien-Heng Lee ,  Akira Goda

IPC: G11C11/408 ,  G11C11/4094 ,  G11C11/4074 ,  G11C11/4093

Abstract: A device includes an array of memory cells having a word line coupled to at least a subset of the array, a queue, and control logic. The control logic: detects a first read command to read first data from a first page of the subset; accesses a second read command in the queue, the second read command to read second data from a second page of the subset; causes a voltage applied to the word line to ramp up to an initial value; causes the voltage to move to a target value; directs a page buffer to sense the first data from a first bit line coupled to the first page of the subset; directs the page buffer to sense the second data from a second bit line coupled to the second page of the subset; and causes the word line to be discharged.