公开(公告)号：US10217936B2

公开(公告)日：2019-02-26

申请号：US16040521

申请日：2018-07-19

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Swapnil A. Lengade ,  John M. Meldrim ,  Andrea Gotti

IPC: H01L45/00 ,  H01L27/24

Abstract: Apparatuses and methods of manufacture are disclosed for phase change memory cell electrodes having a conductive barrier material. In one example, an apparatus includes a first chalcogenide structure and a second chalcogenide structure stacked together with the first chalcogenide structure. A first electrode portion is coupled to the first chalcogenide structure, and a second electrode portion is coupled to the second chalcogenide structure. An electrically conductive barrier material is disposed between the first and second electrode portions.

公开(公告)号：US10163977B1

公开(公告)日：2018-12-25

申请号：US15466689

申请日：2017-03-22

Applicant: Micron Technology, Inc.

Inventor： Paolo Fantini ,  F. Daniel Gealy ,  Enrico Varesi ,  Swapnil A. Lengade

IPC: H01L45/00 ,  H01L43/08 ,  H01L43/10 ,  H01L27/24 ,  H01L27/11507 ,  H01L27/11514 ,  C01B35/14 ,  C01B19/00

Abstract: Systems, devices, and methods related to or that employ chalcogenide memory components and compositions are described. A memory device, such as a selector device, may be made of a chalcogenide material composition. A chalcogenide material may have a composition that includes one or more elements from the boron group, such as boron, aluminum, gallium, indium, or thallium. A selector device, for instance, may have a composition of selenium, arsenic, and at least one of boron, aluminum, gallium, indium, or thallium. The selector device may also be composed of germanium or silicon, or both. The relative amount of boron, aluminum, gallium, indium, or thallium may affect a threshold voltage of a memory component, and the relative amount may be selected accordingly. A memory component may, for instance have a composition that includes selenium, arsenic, and some combination of germanium, silicon, and at least one of boron, aluminum, gallium, indium, or thallium.

公开(公告)号：US20180351097A1

公开(公告)日：2018-12-06

申请号：US16039769

申请日：2018-07-19

Applicant: Micron Technology, Inc.

Inventor： Swapnil A. Lengade ,  John M. Meldrim ,  Andrea Gotti

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/1608 ,  H01L27/2427 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1253 ,  H01L45/141 ,  H01L45/144

Abstract: Apparatuses and methods of manufacture are disclosed for phase change memory cell electrodes having a conductive barrier material. In one example, an apparatus includes a first chalcogenide structure and a second chalcogenide structure stacked together with the first chalcogenide structure. A first electrode portion is coupled to the first chalcogenide structure, and a second electrode portion is coupled to the second chalcogenide structure. An electrically conductive barrier material is disposed between the first and second electrode portions.

公开(公告)号：US20180331285A1

公开(公告)日：2018-11-15

申请号：US16040515

申请日：2018-07-19

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Swapnil A. Lengade ,  John M. Meldrim ,  Andrea Gotti

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/1608 ,  H01L27/2427 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1253 ,  H01L45/141 ,  H01L45/144

Abstract: Apparatuses and methods of manufacture are disclosed for phase change memory cell electrodes having a conductive barrier material. In one example, an apparatus includes a first chalcogenide structure and a second chalcogenide structure stacked together with the first chalcogenide structure. A first electrode portion is coupled to the first chalcogenide structure, a second electrode portion is coupled to the second chalcogenide structure, and a third electrode portion is between the first and second electrode portions. A first portion of an electrically conductive barrier material is disposed between the first and third electrode portions. A second portion of the electrically conductive barrier material is disposed between the second and third electrode portions.

公开(公告)号：US09166158B2

公开(公告)日：2015-10-20

申请号：US13776485

申请日：2013-02-25

Applicant: Micron Technology, Inc.

Inventor： Swapnil A. Lengade ,  John M. Meldrim ,  Andrea Gotti

IPC: H01L47/00 ,  H01L45/00 ,  H01L27/24

CPC classification number: H01L45/1608 ,  H01L27/2427 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1253 ,  H01L45/141 ,  H01L45/144

Abstract: Apparatuses and methods of manufacture are disclosed for phase change memory cell electrodes having a conductive barrier material. In one example, an apparatus includes a first chalcogenide structure and a second chalcogenide structure stacked together with the first chalcogenide structure. A first electrode portion is coupled to the first chalcogenide structure, and a second electrode portion is coupled to the second chalcogenide structure. An electrically conductive barrier material is disposed between the first and second electrode portions.

Abstract translation: 公开了具有导电阻挡材料的相变存储单元电极的制造方法和制造方法。 在一个实例中，装置包括与第一硫族化物结构堆叠在一起的第一硫族化物结构和第二硫族化物结构。 第一电极部分耦合到第一硫族化物结构，并且第二电极部分耦合到第二硫族化物结构。 导电阻挡材料设置在第一和第二电极部分之间。

公开(公告)号：US20140239245A1

公开(公告)日：2014-08-28

申请号：US13776485

申请日：2013-02-25

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Swapnil A. Lengade ,  John M. Meldrim ,  Andrea Gotti

IPC: H01L45/00

CPC classification number: H01L45/1608 ,  H01L27/2427 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1253 ,  H01L45/141 ,  H01L45/144

Abstract: Apparatuses and methods of manufacture are disclosed for phase change memory cell electrodes having a conductive barrier material. In one example, an apparatus includes a first chalcogenide structure and a second chalcogenide structure stacked together with the first chalcogenide structure. A first electrode portion is coupled to the first chalcogenide structure, and a second electrode portion is coupled to the second chalcogenide structure. An electrically conductive barrier material is disposed between the first and second electrode portions.

Abstract translation: 公开了具有导电阻挡材料的相变存储单元电极的制造方法和制造方法。 在一个实例中，装置包括与第一硫族化物结构堆叠在一起的第一硫族化物结构和第二硫族化物结构。 第一电极部分耦合到第一硫族化物结构，并且第二电极部分耦合到第二硫族化物结构。 导电阻挡材料设置在第一和第二电极部分之间。