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公开(公告)号：US20210358868A1
公开(公告)日：2021-11-18
申请号：US17443616
申请日：2021-07-27
IPC分类号： H01L23/00 , H01L27/11556 , H01L27/11529 , H01L27/1157 , H01L27/11582 , H01L27/11573 , H01L23/522 , H01L23/528 , H01L23/535 , H01L21/768 , H01L27/11524
摘要： Microelectronic devices include a stack structure of insulative structures vertically alternating with conductive structures and arranged in tiers forming opposing staircase structures. A polysilicon fill material substantially fills an opening (e.g., a high-aspect-ratio opening) between the opposing staircase structures. The polysilicon fill material may have non-compressive stress such that the stack structure may be partitioned into blocks without the blocks bending and without contacts—formed in at least one of the polysilicon fill material and the stack structure—deforming, misaligning, or forming electrical shorts with neighboring contacts.
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公开(公告)号：US10943920B2
公开(公告)日：2021-03-09
申请号：US16738499
申请日：2020-01-09
发明人： John M. Meldrim , Yushi Hu , Rita J. Klein , John D. Hopkins , Hongbin Zhu , Gordon A. Haller , Luan C. Tran
IPC分类号： H01L27/11582 , H01L27/11524 , H01L27/11556 , H01L27/1157 , H01L21/28 , H01L29/49
摘要： Some embodiments include a memory array which has a stack of alternating first and second levels. Channel material pillars extend through the stack, and vertically-stacked memory cell strings are along the channel material pillars. A common source is under the stack and electrically coupled to the channel material pillars. The common source has conductive protective material over and directly against metal silicide, with the conductive protective material being a composition other than metal silicide. Some embodiments include methods of fabricating integrated structures.
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公开(公告)号：US20200152658A1
公开(公告)日：2020-05-14
申请号：US16738499
申请日：2020-01-09
发明人： John M. Meldrim , Yushi Hu , Rita J. Klein , John D. Hopkins , Hongbin Zhu , Gordon A. Haller , Luan C. Tran
IPC分类号： H01L27/11582 , H01L27/11524 , H01L27/11556 , H01L27/1157 , H01L21/28 , H01L29/49
摘要： Some embodiments include a memory array which has a stack of alternating first and second levels. Channel material pillars extend through the stack, and vertically-stacked memory cell strings are along the channel material pillars. A common source is under the stack and electrically coupled to the channel material pillars. The common source has conductive protective material over and directly against metal silicide, with the conductive protective material being a composition other than metal silicide. Some embodiments include methods of fabricating integrated structures.
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公开(公告)号：US10553611B2
公开(公告)日：2020-02-04
申请号：US16413498
申请日：2019-05-15
发明人： John M. Meldrim , Yushi Hu , Rita J. Klein , John D. Hopkins , Hongbin Zhu , Gordon A. Haller , Luan C. Tran
IPC分类号： H01L27/11556 , H01L27/11582 , H01L27/11524 , H01L27/1157 , H01L21/28 , H01L29/49
摘要： Some embodiments include a memory array which has a stack of alternating first and second levels. Channel material pillars extend through the stack, and vertically-stacked memory cell strings are along the channel material pillars. A common source is under the stack and electrically coupled to the channel material pillars. The common source has conductive protective material over and directly against metal silicide, with the conductive protective material being a composition other than metal silicide. Some embodiments include methods of fabricating integrated structures.
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5.发明授权公开(公告)号：US10069069B2
公开(公告)日：2018-09-04
申请号：US15848477
申请日：2017-12-20
摘要： Apparatuses and methods of manufacture are disclosed for phase change memory cell electrodes having a conductive barrier material. In one example, an apparatus includes a first chalcogenide structure and a second chalcogenide structure stacked together with the first chalcogenide structure. A first electrode portion is coupled to the first chalcogenide structure, a second electrode portion is coupled to the second chalcogenide structure, and a third electrode portion is between the first and second electrode portions. A first portion of an electrically conductive barrier material is disposed between the first and third electrode portions. A second portion of the electrically conductive barrier material is disposed between the second and third electrode portions.
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公开(公告)号：US11710710B2
公开(公告)日：2023-07-25
申请号：US17443616
申请日：2021-07-27
IPC分类号： H01L23/00 , H01L23/522 , H01L23/528 , H01L23/535 , H01L21/768 , H10B41/27 , H10B41/35 , H10B41/41 , H10B43/27 , H10B43/35 , H10B43/40
CPC分类号： H01L23/562 , H01L21/76816 , H01L21/76831 , H01L21/76877 , H01L21/76895 , H01L23/5226 , H01L23/5283 , H01L23/535 , H10B41/27 , H10B41/35 , H10B41/41 , H10B43/27 , H10B43/35 , H10B43/40 , H01L2221/1063
摘要： Microelectronic devices include a stack structure of insulative structures vertically alternating with conductive structures and arranged in tiers forming opposing staircase structures. A polysilicon fill material substantially fills an opening (e.g., a high-aspect-ratio opening) between the opposing staircase structures. The polysilicon fill material may have non-compressive stress such that the stack structure may be partitioned into blocks without the blocks bending and without contacts—formed in at least one of the polysilicon fill material and the stack structure—deforming, misaligning, or forming electrical shorts with neighboring contacts.
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公开(公告)号：US11088088B2
公开(公告)日：2021-08-10
申请号：US16674644
申请日：2019-11-05
IPC分类号： H01L23/00 , H01L27/11556 , H01L27/11529 , H01L27/1157 , H01L27/11582 , H01L27/11573 , H01L23/522 , H01L23/528 , H01L23/535 , H01L21/768 , H01L27/11524
摘要： Microelectronic devices include a stack structure of insulative structures vertically alternating with conductive structures and arranged in tiers forming opposing staircase structures. A polysilicon fill material substantially fills an opening (e.g., a high-aspect-ratio opening) between the opposing staircase structures. The polysilicon fill material may have non-compressive stress such that the stack structure may be partitioned into blocks without the blocks bending and without contacts—formed in at least one of the polysilicon fill material and the stack structure—deforming, misaligning, or forming electrical shorts with neighboring contacts.
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8.发明授权公开(公告)号：US10651381B2
公开(公告)日：2020-05-12
申请号：US16040515
申请日：2018-07-19
摘要： Apparatuses and methods of manufacture are disclosed for phase change memory cell electrodes having a conductive barrier material. In one example, an apparatus includes a first chalcogenide structure and a second chalcogenide structure stacked together with the first chalcogenide structure. A first electrode portion is coupled to the first chalcogenide structure, a second electrode portion is coupled to the second chalcogenide structure, and a third electrode portion is between the first and second electrode portions. A first portion of an electrically conductive barrier material is disposed between the first and third electrode portions. A second portion of the electrically conductive barrier material is disposed between the second and third electrode portions.
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9.发明申请公开(公告)号：US20180331287A1
公开(公告)日：2018-11-15
申请号：US16045550
申请日：2018-07-25
CPC分类号： H01L45/1608 , H01L27/2427 , H01L27/2463 , H01L45/06 , H01L45/12 , H01L45/1233 , H01L45/1246 , H01L45/1253 , H01L45/141 , H01L45/144
摘要： Apparatuses and methods of manufacture are disclosed for phase change memory cell electrodes having a conductive barrier material. In one example, apparatus includes a first chalcogenide structure and a second chalcogenide structure stacked together with the first chalcogenide structure. A first electrode portion is coupled to the first chalcogenide structure, and a second electrode portion is coupled to the second chalcogenide structure. An electrically conductive barrier material is disposed between the first and second electrode portions.
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10.发明公开公开(公告)号：US20240071919A1
公开(公告)日：2024-02-29
申请号：US17823472
申请日：2022-08-30
发明人： Mohad Baboli , Yiping Wang , Xiao Li , Lifang Xu , John M. Meldrim , Jivaan Kishore Jhothiraman , Shuangqiang Luo
IPC分类号： H01L23/528 , H01L21/768 , H01L23/535
CPC分类号： H01L23/5283 , H01L21/76816 , H01L21/76822 , H01L21/76831 , H01L21/76832 , H01L21/76895 , H01L23/535
摘要： A microelectronic device includes a stack structure comprising blocks separated from one another by dielectric slot structures and each including a vertically alternating sequence of conductive structures and insulative structures arranged in tiers. At least one of the blocks comprising a stadium structure comprising opposing staircase structures each having steps comprising edges of the tiers; and a filled trench vertically overlying and within horizontal boundaries of the stadium structure of the at least one of the blocks. The filled trench includes a dielectric liner material on the opposing staircase structures of the stadium structure and on inner sidewalls of the two bridge regions and at least one dielectric structure doped with one or more of carbon and boron on the dielectric liner material, the at least one dielectric structure horizontally overlapping the steps of the stadium structure.
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