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公开(公告)号:US11715531B2
公开(公告)日:2023-08-01
申请号:US17210713
申请日:2021-03-24
Applicant: Micron Technology, Inc.
Inventor: Christopher M. Smitchger , Gary F. Besinga , Renato C. Padilla , Tawalin Opastrakoon , Sampath K. Ratnam , Michael G. Miller , Vamsi Pavan Rayaprolu , Ashutosh Malshe
CPC classification number: G11C16/3418 , G11C16/105 , G11C16/26 , G11C29/50004
Abstract: A system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including identifying an amount of storage charge loss (SCL) that has occurred on an open block of the memory device, the open block having one or more erased pages, determining that the amount of SCL satisfies a threshold criterion corresponding to an acceptable amount of SCL to occur on the open block, and responsive to determining that the amount of SCL satisfies the threshold criterion, keeping the open block open for programming the one or more erased pages.
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22.
公开(公告)号:US11687452B2
公开(公告)日:2023-06-27
申请号:US17123244
申请日:2020-12-16
Applicant: Micron Technology, Inc.
Inventor: Gary F. Besinga , Renato C. Padilla , Tawalin Opastrakoon , Sampath K. Ratnam , Michael G. Miller , Christopher M. Smitchger , Vamsi Pavan Rayaprolu , Ashutosh Malshe
CPC classification number: G06F12/0646 , G06F1/28 , G11C16/3459 , G06F2212/1028 , G11C16/10
Abstract: An amount of threshold voltage distribution shift is determined. The threshold voltage distribution shift corresponds to an amount of time after programming of a reference page of a block of a memory device. A program-verify voltage is adjusted based on the amount of threshold voltage distribution shift to obtain an adjusted program-verify voltage. Using the adjusted program-verify voltage, a temporally subsequent page of the block is programmed at a time corresponding to the amount of time after the programming of the reference page.
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公开(公告)号:US20220310183A1
公开(公告)日:2022-09-29
申请号:US17210713
申请日:2021-03-24
Applicant: Micron Technology, Inc.
Inventor: Christopher M. Smitchger , Gary F. Besinga , Renato C. Padilla , Tawalin Opastrakoon , Sampath K. Ratnam , Michael G. Miller , Vamsi Pavan Rayaprolu , Ashutosh Malshe
Abstract: A system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including identifying an amount of storage charge loss (SCL) that has occurred on an open block of the memory device, the open block having one or more erased pages, determining that the amount of SCL satisfies a threshold criterion corresponding to an acceptable amount of SCL to occur on the open block, and responsive to determining that the amount of SCL satisfies the threshold criterion, keeping the open block open for programming the one or more erased pages.
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公开(公告)号:US20220284974A1
公开(公告)日:2022-09-08
申请号:US17249448
申请日:2021-03-02
Applicant: Micron Technology, Inc.
Inventor: Tawalin Opastrakoon , Renato C. Padilla , Vamsi Pavan Rayaprolu , Sampath K. Ratnam , Michael G. Miller , Gary F. Besinga , Christopher M. Smitchger
Abstract: A configuration setting manager of a memory device receives a request to perform an adjustment operation on a set of configuration setting values for the memory device, where each configuration setting value of the set of configuration setting values is stored in a corresponding configuration register of a set of configuration registers; determines a configuration adjustment definition associated with one or more configuration setting values of the set of configuration setting values; calculates an updated set of configuration setting values by applying a multiplier value to the configuration adjustment definition, wherein the multiplier value is associated with a number of programming operations performed on the memory device; and stores the updated set of configuration setting values in the corresponding configuration registers.
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