公开(公告)号：US20120097951A1

公开(公告)日：2012-04-26

申请号：US13096330

申请日：2011-04-28

申请人： Jin-Goo Kang ,  Young-In Hwang ,  Ji-Young Kim ,  Hyo-Seok Kim

发明人： Jin-Goo Kang ,  Young-In Hwang ,  Ji-Young Kim ,  Hyo-Seok Kim

IPC分类号： H01L33/16

CPC分类号： H01L27/3223

摘要： An organic light-emitting display device includes a substrate including a rectangular light-emitting area and a circuit area, the circuit area including a thin film transistor, the light-emitting area including an electroluminescent layer produced by a solution deposition process, the light-emitting area being bounded by a first major side, a second major side, a first minor side and a second minor side, the first major side being opposite from and parallel to a second major side, each of these sides having wiring or dummies arranged thereat, and a pixel defining layer arranged on the wirings and on the dummies. In order to produce a uniform thickness electroluminescent layer via a solution deposition process, top surfaces of the pixel defining layer on each of the wirings and dummies that border the light emitting area are arranged in a same plane that is parallel to the substrate.

摘要翻译： 有机发光显示装置包括具有矩形发光区域和电路区域的基板，所述电路区域包括薄膜晶体管，所述发光区域包括通过溶液沉积工艺制造的电致发光层， 发光区域由第一主侧面，第二主侧面，第一次侧面和第二次要侧面限定，第一主侧面与第二主侧面相对并平行，其中每个侧面布置有布线或虚拟物 以及布置在布线和虚拟物上的像素限定层。 为了通过溶液沉积工艺制造出均匀的厚度的电致发光层，每个布线上的像素限定层的顶表面和与发光区域相邻的虚拟体被布置在与衬底平行的同一平面中。

公开(公告)号：US08164134B2

公开(公告)日：2012-04-24

申请号：US12481403

申请日：2009-06-09

申请人： Ji-Young Kim ,  Kang L. Wang ,  Yong-Jik Park ,  Jeong-Hee Han ,  Augustin Jinwoo Hong

发明人： Ji-Young Kim ,  Kang L. Wang ,  Yong-Jik Park ,  Jeong-Hee Han ,  Augustin Jinwoo Hong

IPC分类号： H01L29/792 ,  H01L27/108

CPC分类号： H01L27/11578 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/11575 ,  H01L27/11582 ,  H01L29/66833 ,  H01L29/792 ,  H01L29/7926

摘要： Provided are a semiconductor device and a method of fabricating the same. At least one mold structure defining at least one first opening is formed on a substrate, wherein the mold structure comprises first mold patterns and second mold patterns that are sequentially and alternatingly stacked. Thereafter, side surfaces of the first mold patterns are selectively etched to form undercut regions between the second mold patterns. Then, a semiconductor layer is formed to cover a surface of the mold structure where the undercut regions are formed, and gate patterns are formed, which fill respective undercut regions where the semiconductor layer is formed.

摘要翻译： 提供半导体器件及其制造方法。 在衬底上形成限定至少一个第一开口的至少一个模具结构，其中模具结构包括顺序地和交替地堆叠的第一模具图案和第二模具图案。 此后，选择性地蚀刻第一模具图案的侧表面以在第二模具图案之间形成底切区域。 然后，形成半导体层以覆盖形成底切区域的模具结构的表面，形成栅极图案，填充形成半导体层的各个底切区域。

公开(公告)号：US20120012850A1

公开(公告)日：2012-01-19

申请号：US13171184

申请日：2011-06-28

申请人： Ji-Young Kim ,  Mu-Hyun Kim ,  Jin-Goo Kang ,  Dong-Kyu Lee ,  Jae-Bok Kim

发明人： Ji-Young Kim ,  Mu-Hyun Kim ,  Jin-Goo Kang ,  Dong-Kyu Lee ,  Jae-Bok Kim

IPC分类号： H01L33/08

CPC分类号： H01L27/3258 ,  H01L27/3246

摘要： An organic light emitting display apparatus in which image quality can be improved. The organic light emitting display apparatus includes: a substrate; a first electrode disposed on the substrate; a pixel definition layer formed on the first electrode and having an opening portion through which a region of the first electrode is exposed; an intermediate layer connected to the first electrode through the opening portion and including an organic emission layer; a second electrode electrically connected to the intermediate layer; and an inorganic planarization pattern portion disposed between the substrate and the first electrode and formed to at least correspond to the opening portion.

摘要翻译： 一种能够提高图像质量的有机发光显示装置。 有机发光显示装置包括：基板; 设置在所述基板上的第一电极; 形成在第一电极上并具有开口部分的像素限定层，第一电极的区域通过该开口部分露出; 中间层，其通过所述开口部分连接到所述第一电极并且包括有机发射层; 电连接到所述中间层的第二电极; 以及设置在所述基板和所述第一电极之间并且至少形成为至少对应于所述开口部分的无机平坦化图案部分。

公开(公告)号：US07785572B2

公开(公告)日：2010-08-31

申请号：US10856468

申请日：2004-05-28

申请人： Ji-Young Kim ,  Jong-Ho Kim ,  Sug-Youn Chang ,  Sei-Young Yun ,  An-gi Choi

发明人： Ji-Young Kim ,  Jong-Ho Kim ,  Sug-Youn Chang ,  Sei-Young Yun ,  An-gi Choi

IPC分类号： A61K8/00 ,  A61K8/22

CPC分类号： A61K8/0208 ,  A61K8/22 ,  A61Q11/00

摘要： A dry type adhesive device for teeth whitening in which a peroxide tooth whitening agent is stabilized is disclosed. The dry type adhesive device for tooth whitening comprises a matrix type adhesive layer and a backing layer wherein the adhesive layer contains a peroxide as a teeth whitening agent and a hydrophilic glassy polymer as a base polymer so that the hydrophilic glassy polymer provides strong adhesion to teeth when hydrated at the enamel layer of the teeth in the moist oral cavity and the whitening agent is released. In particular, although the dry type adhesive device is touched with the hands or contact the skin during attaching to the teeth prior to hydration, no stickiness and releasing of the whitening agent takes place, thus being safe. In addition, since the dry type patch has strong adhesive strength to the teeth and excellent adhesion maintenance after being hydrated and attached to the teeth, it can remain attached to the teeth for a long time and thus exhibits excellent whitening effect even low concentrations of a whitening agent. Furthermore, the dry type adhesive device can provide excellent whitening within a short period of time.

摘要翻译： 公开了一种用于牙齿美白的干式粘合装置，其中过氧化物牙齿增白剂稳定。 用于牙齿美白的干式粘合装置包括基质型粘合剂层和背衬层，其中粘合剂层含有作为牙齿增白剂的过氧化物和作为基础聚合物的亲水性玻璃状聚合物，使得亲水性玻璃状聚合物对牙齿提供强烈粘附 当在潮湿的口腔中的牙齿的牙釉质层处水合并且释放增白剂时。 具体地说，虽然在水合之前，用手接触干式粘合装置或者在附着到牙齿时接触皮肤，但是不会发生美白剂的粘性和释放，因此是安全的。 此外，由于干式贴剂对牙齿具有强的粘合强度并且在水合并附着到牙齿之后具有优异的粘附维持性，所以它可以长时间保持附着在牙齿上，因此即使低浓度的 美白剂。 此外，干式粘合装置可以在短时间内提供优异的美白。

公开(公告)号：US20080196515A1

公开(公告)日：2008-08-21

申请号：US12031086

申请日：2008-02-14

申请人： Ok-Sun Lee ,  Hyung-Seok Choi ,  Yo-Han Ahn ,  Ji-Young Kim

发明人： Ok-Sun Lee ,  Hyung-Seok Choi ,  Yo-Han Ahn ,  Ji-Young Kim

IPC分类号： G01N1/14

CPC分类号： G03F1/82 ,  G01N2015/0687

摘要： A contamination analysis unit and method for inspecting pollutants remaining on a target side of an inspection object such as a reticle after cleaning the object is provided. After steeping the target side in a solution, a sampling liquid may be abstracted therefrom after a predetermined time and may be analyzed.

摘要翻译： 提供了一种污染分析单元和用于检查在清洁物体之后残留在诸如掩模版之类的检查对象的目标侧上的污染物的方法。 在将目标侧浸入溶液中之后，可以在预定时间之后从其中抽取取样液体并进行分析。

公开(公告)号：US20080081432A1

公开(公告)日：2008-04-03

申请号：US11624905

申请日：2007-01-19

申请人： Yong-Jin KIM ,  Kyeong-Koo Chi ,  Chang-Jin Kang ,  Hyoung-Sub Kim ,  Mybong-Cheol Kim ,  Tae-Rin Chung ,  Sung-Hoon Chung ,  Ji-Young Kim

发明人： Yong-Jin KIM ,  Kyeong-Koo Chi ,  Chang-Jin Kang ,  Hyoung-Sub Kim ,  Mybong-Cheol Kim ,  Tae-Rin Chung ,  Sung-Hoon Chung ,  Ji-Young Kim

IPC分类号： H01L21/76

CPC分类号： H01L29/66621 ,  H01L21/823437 ,  H01L27/10876 ,  H01L29/7834

摘要： A semiconductor device includes a plurality of gate trenches, each of which has first inner walls, which face each other in a first direction which is perpendicular to a second direction in which active regions extend, and second inner walls, which face each other in the second direction in which the active regions extends. An isolation layer contacts a gate insulating layer throughout the entire length of the first inner wails of the gate trenches including from entrance portions of the gate trenches to bottom portions of the gate trenches, and a plurality of channel regions are disposed adjacent to the gate insulating layers in the semiconductor substrate along the second inner walls and the bottom portions of the gate trenches.

摘要翻译： 半导体器件包括多个栅极沟槽，每个栅极沟槽具有第一内壁，该第一内壁沿与第一方向相对的第一方向，该第一方向垂直于有源区域延伸的第二方向;以及第二内壁， 活动区域延伸的第二方向。 隔离层在包括从栅极沟槽的入口部分到栅极沟槽的底部的栅极沟槽的整个长度的整个长度上接触栅极绝缘层，并且多个沟道区域邻近栅极绝缘体 沿着第二内壁和栅极沟槽的底部的半导体衬底中的层。

公开(公告)号：US20070144579A1

公开(公告)日：2007-06-28

申请号：US11497353

申请日：2006-08-02

申请人： Byung-Jun Jung ,  Moon-Jae Lee ,  Dae-Won Kim ,  Chang-Hee Lee ,  Ji-Young Kim

发明人： Byung-Jun Jung ,  Moon-Jae Lee ,  Dae-Won Kim ,  Chang-Hee Lee ,  Ji-Young Kim

IPC分类号： H01L31/00

CPC分类号： H01L51/4253 ,  B82Y10/00 ,  H01L51/0037 ,  H01L51/0038 ,  H01L51/0044 ,  H01L51/0047 ,  H01L51/0053 ,  H01L51/0071 ,  H01L51/0073 ,  H01L51/4246 ,  Y02E10/549

摘要： Provided is a photovoltaic device with an organic buffer layer for efficiency improvement. The photovoltaic device includes a first electrode and a second electrode disposed opposite to each other, a photoactive layer disposed between the first electrode and the second electrode, and a buffer layer disposed between the photoactive layer and the second electrode. The buffer layer includes a compound including an aromatic organic cation and an anion in a quantity ranging from 30 wt % to 100 wt %, more preferably 50 wt % to 100 wt % with respect to the entire weight of the buffer layer.

摘要翻译： 提供了一种具有有机缓冲层以提高效率的光伏器件。 光电器件包括彼此相对设置的第一电极和第二电极，设置在第一电极和第二电极之间的光敏层，以及设置在光敏层和第二电极之间的缓冲层。 相对于缓冲层的整个重量，缓冲层包括含有30重量％〜100重量％，更优选50重量％〜100重量％的芳香族有机阳离子和阴离子的化合物。

公开(公告)号：US20060202340A1

公开(公告)日：2006-09-14

申请号：US11279080

申请日：2006-04-07

申请人： Byung-Jun Park ,  Ji-Young Kim

发明人： Byung-Jun Park ,  Ji-Young Kim

IPC分类号： H01L23/52

CPC分类号： H01L21/76877 ,  H01L21/76831 ,  H01L21/76895 ,  H01L21/76897 ,  H01L27/0207 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10888 ,  H01L2924/0002 ,  H01L2924/00

摘要： Wirings including first conductive layer patterns and insulating mask layer patterns are formed on a substrate. Insulating spacers are formed on sidewalls of the wirings. Self-aligned contact pads including portions of a second conductive layer are formed to contact with surfaces of the insulating spacers and to fill up a gap between the wirings. An interlayer dielectric layer is formed on the substrate where the contact pads are formed and is then partially etched to form contact holes exposing the contact pads. A selective epitaxial silicon layer is formed on the contact pads exposed through the contact holes to cover the insulating mask layer patterns. Thus, a short-circuit between the lower wiring and an upper wiring formed in the contact holes is prevented.

摘要翻译： 在基板上形成包括第一导电层图案和绝缘掩模层图案的布线。 绝缘垫片形成在布线的侧壁上。 形成包括第二导电层的部分的自对准接触焊盘与绝缘间隔物的表面接触并填充布线之间的间隙。 在形成接触焊盘的基板上形成层间电介质层，然后将其部分地蚀刻以形成暴露接触焊盘的接触孔。 在通过接触孔暴露的接触焊盘上形成选择性外延硅层以覆盖绝缘掩模层图案。 因此，防止下布线和形成在接触孔中的上布线之间的短路。

公开(公告)号：US07060574B2

公开(公告)日：2006-06-13

申请号：US10839951

申请日：2004-05-05

申请人： Ji-Young Kim ,  Chang-Sub Lee

发明人： Ji-Young Kim ,  Chang-Sub Lee

IPC分类号： H01L21/336

CPC分类号： H01L29/105 ,  H01L29/1083 ,  H01L29/6659 ,  H01L29/66621 ,  H01L29/7834

摘要： In a method of manufacturing a buried channel type transistor, a trench is formed at a surface portion of a substrate. A first and a second threshold voltage control regions are formed at portions of the substrate beneath a bottom face of the trench and adjacent to a sidewall of the trench, respectively. A gate electrode filling the trench is formed. Source/drain regions are formed at portions of the substrate adjacent to the sidewall of the gate electrode. Stopper regions are formed at portions of the substrate beneath the source/drain regions and beneath the first and second threshold voltage control regions, respectively. The buried channel type transistor has a high breakdown voltage between the source/drain regions although a threshold voltage thereof is low.

公开(公告)号：US06960507B2

公开(公告)日：2005-11-01

申请号：US10759239

申请日：2004-01-20

申请人： Ji-Young Kim ,  Jin-Jun Park

发明人： Ji-Young Kim ,  Jin-Jun Park

IPC分类号： H01L21/762 ,  H01L21/336 ,  H01L21/76 ,  H01L21/8234 ,  H01L27/088 ,  H01L27/11 ,  H01L29/423 ,  H01L29/76 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L29/66787 ,  H01L29/42384 ,  H01L29/78696

摘要： A vertical double channel silicon-on-insulator (SOI) field-effect-transistor (FET) includes a pair of two vertical semiconductor layers in contact with a pair of parallel shallow trench isolation layers on a substrate, a source, a drain and a channel region on each of the pair of vertical semiconductor layers with corresponding regions on the pair of vertical semiconductor layers facing each other in alignment, a gate oxide on the channel region of both of the pair of the vertical semiconductor layers, and a gate electrode, a source electrode, and a drain electrode electrically connecting the respective regions of the pair of vertical semiconductor layers.

摘要翻译： 垂直双通道绝缘体上硅（SOI）场效应晶体管（FET）包括与衬底上的一对平行浅沟槽隔离层接触的一对两个垂直半导体层，源极，漏极和漏极 所述一对垂直半导体层中的每一个上的沟道区域与所述一对垂直半导体层中的对置区域对准，所述一对垂直半导体层中的两个沟道区上的栅极氧化物和栅电极， 源极电极和漏电极，电连接所述一对垂直半导体层的各个区域。