Electronic blind and method for manufacturing electronic blind
    21.
    发明授权
    Electronic blind and method for manufacturing electronic blind 有权
    电子盲人和电子盲人制造方法

    公开(公告)号:US08248546B2

    公开(公告)日:2012-08-21

    申请号:US12227446

    申请日:2007-05-22

    Applicant: Rajesh Kumar

    Inventor: Rajesh Kumar

    Abstract: An electronic blind and method for manufacturing an electronic blind, for whole or partial area light control management includes a pair of substrates, polymer/liquid crystal composite material sandwiched between the pair of substrates, and a pair of electrodes formed on an opposing surface of the pair of substrates. One electrode of the pair of electrodes is patterned over one substrate in line form at intervals from one side to the other side of the substrate, and an other electrode of the pair of electrodes is formed over the entire surface of another substrate.

    Abstract translation: 一种用于制造电子盲板的电子盲模和全面或局部区域光控制管理方法包括夹在一对基板之间的一对基板,聚合物/液晶复合材料和形成在该对基板的相对表面上的一对电极 一对基板。 一对电极的一个电极在一个基板上以一定的间隔从衬底的一侧到另一侧以线形式进行构图,并且一对电极的另一个电极形成在另一衬底的整个表面上。

    Method for manufacturing silicon carbide semiconductor device
    30.
    发明授权
    Method for manufacturing silicon carbide semiconductor device 有权
    碳化硅半导体器件的制造方法

    公开(公告)号:US07763504B2

    公开(公告)日:2010-07-27

    申请号:US12071186

    申请日:2008-02-19

    Abstract: A manufacturing method of a silicon carbide semiconductor device includes the steps of: preparing a semiconductor substrate including a silicon carbide substrate, a drift layer and a first semiconductor layer; forming a plurality of first trenches in a cell portion; forming a gate layer on an inner wall of each first trench by an epitaxial growth method; forming a first insulation film on the surface of the semiconductor substrate; forming a gate electrode on the first insulation film for connecting to the gate layer electrically; forming a source electrode on the first insulation film for connecting to the first semiconductor layer in the cell portion; and forming a drain electrode connected to the silicon carbide substrate electrically.

    Abstract translation: 碳化硅半导体器件的制造方法包括以下步骤:制备包括碳化硅衬底,漂移层和第一半导体层的半导体衬底; 在单元部分中形成多个第一沟槽; 通过外延生长法在每个第一沟槽的内壁上形成栅极层; 在所述半导体衬底的表面上形成第一绝缘膜; 在所述第一绝缘膜上形成用于电连接到所述栅极层的栅电极; 在所述第一绝缘膜上形成用于连接到所述单元部分中的所述第一半导体层的源电极; 以及电连接到所述碳化硅衬底的漏电极。

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