公开(公告)号：US08274551B2

公开(公告)日：2012-09-25

申请号：US12136395

申请日：2008-06-10

申请人： Yong-tae Kim ,  Jae-seung Kim ,  Seon-deok Hwang

发明人： Yong-tae Kim ,  Jae-seung Kim ,  Seon-deok Hwang

IPC分类号： H04N15/00 ,  H04N5/92 ,  G06K9/00

CPC分类号： H04N13/189 ,  H04N13/106 ,  H04N13/128 ,  H04N13/161 ,  H04N13/178 ,  H04N13/194 ,  H04N13/282 ,  H04N13/359 ,  H04N19/597 ,  H04N2213/003

摘要： A method and apparatus for using header information of stereoscopic image data is provided. The method includes using three-dimensional reproduction period information related to three-dimensionally reproduced stereoscopic image data of image data recorded in a payload region of the stereoscopic image bitstream, in a header region of the stereoscopic image bitstream; recording camera information related to cameras used for obtaining a stereoscopic image, in the header region; recording parallax information between base and additional images of the stereoscopic image in the header region; and recording the image data in the payload region of the stereoscopic image bitstream.

摘要翻译： 提供了一种使用立体图像数据的标题信息的方法和装置。 该方法包括使用与立体图像比特流的有效负载区域中记录的图像数据的三维再现的立体图像数据相关的三维再现周期信息，在立体图像比特流的标题区域中; 在头部区域中记录与用于获得立体图像的相机相关的照相机信息; 在标题区域中的立体图像的基础图像和附加图像之间记录视差信息; 并将图像数据记录在立体图像比特流的有效载荷区域中。

公开(公告)号：US09055280B2

公开(公告)日：2015-06-09

申请号：US13016339

申请日：2011-01-28

申请人： Yong-tae Kim ,  Jae-jun Lee ,  Yong-seok Jang ,  Kil-soo Jung ,  Hong-seok Park

发明人： Yong-tae Kim ,  Jae-jun Lee ,  Yong-seok Jang ,  Kil-soo Jung ,  Hong-seok Park

IPC分类号： H04N13/00 ,  H04N13/04

CPC分类号： H04N13/161 ,  H04N13/139 ,  H04N13/194 ,  H04N13/356 ,  H04N19/46 ,  H04N19/597 ,  H04N19/70 ,  H04N2213/003

摘要： A digital broadcasting stream transmitting method and a digital broadcasting stream receiving method and apparatus for providing three-dimensional (3D) video services are provided. The transmitting method including: generating a plurality of elementary streams (ESs) for a plurality of pieces of video information including at least one of information about a base-view video of a 3D video, information about an additional-view video corresponding to the base-view video, and a two-dimensional (2D) video having a different view from views of the 3D video; multiplexing the plurality of ESs with link information for identifying at least one piece of video information linked with the plurality of pieces of video information, to generate at least one transport stream (TS); and transmitting the generated at least one TS via at least one channel.

摘要翻译： 提供了一种用于提供三维（3D）视频服务的数字广播流发送方法和数字广播流接收方法和装置。 所述发送方法包括：为多条视频信息生成多个基本流（ES），所述多个视频信息包括关于3D视频的基本视点的信息中的至少一个，关于与所述基础相关的附加视频视频的信息 视频视频和具有与3D视频的视图不同的视图的二维（2D）视频; 将多个ES复用到用于识别与多条视频信息链接的至少一条视频信息的链接信息，以产生至少一个传输流（TS）; 以及经由至少一个信道发送所生成的至少一个TS。

公开(公告)号：US09179124B2

公开(公告)日：2015-11-03

申请号：US12392613

申请日：2009-02-25

申请人： Yong-tae Kim ,  Gun-ill Lee ,  Dae-sik Kim

发明人： Yong-tae Kim ,  Gun-ill Lee ,  Dae-sik Kim

IPC分类号： H04N13/00 ,  G06F3/12 ,  G06K9/00 ,  G06G7/48 ,  H04N19/597

CPC分类号： H04N13/189 ,  H04N19/597

摘要： Provided are a method and apparatus for encoding and decoding a stereoscopic image. A stereoscopic image restoring method includes parsing a received data stream into image data of a stereoscopic image and information regarding the stereoscopic image; extracting a camera parameter depending on individual characteristics of each of one or more cameras which have captured the stereoscopic image; and decoding and restoring the image data of the stereoscopic image.

摘要翻译： 提供了一种用于对立体图像进行编码和解码的方法和装置。 立体图像恢复方法包括将接收的数据流解析成立体图像的图像数据和关于立体图像的信息; 根据拍摄立体图像的一个或多个相机的每一个的个体特征提取相机参数; 以及解码和恢复立体图像的图像数据。

公开(公告)号：US08570362B2

公开(公告)日：2013-10-29

申请号：US12541372

申请日：2009-08-14

申请人： Sang-moo Park ,  Yong-tae Kim ,  Seon-deok Hwang ,  Dae-sik Kim

发明人： Sang-moo Park ,  Yong-tae Kim ,  Seon-deok Hwang ,  Dae-sik Kim

IPC分类号： H04N15/00 ,  H04N13/04

CPC分类号： G06T15/00 ,  H04N13/139 ,  H04N13/359 ,  H04N2213/007

摘要： Provided are a method and apparatus for displaying a two-dimensional (2D)/three-dimensional (3D) image, and apparatus to execute the same, the method including determining whether an input image sequence having a first frame rate is a 2D image sequence or a 3D image sequence, wherein, if the input image sequence is a 2D image sequence, generating a 2D output image sequence having a second frame rate, the 2D output image sequence including the input image sequence and a 2D intermediate image generated from the input image sequence, and wherein, if the input image sequence is a 3D image sequence, generating a 3D output image sequence having a third frame rate, where a left-viewpoint intermediate image, a right-viewpoint intermediate image and the input image sequence are repeatedly included in the 3D output image sequence, the left-viewpoint intermediate image is determined from at least one left-viewpoint image in a left-viewpoint image sequence included in the input image sequence, and the right-viewpoint intermediate image is determined from at least one right-viewpoint image in a right-viewpoint image sequence included in the input image sequence.

摘要翻译： 提供了一种用于显示二维（2D）/三维（3D）图像的方法和装置及其执行方法，所述方法包括确定具有第一帧速率的输入图像序列是否为2D图像序列 或3D图像序列，其中如果所述输入图像序列是2D图像序列，则生成具有第二帧率的2D输出图像序列，所述2D输出图像序列包括所述输入图像序列和从所述输入生成的2D中间图像 图像序列，并且其中，如果所述输入图像序列是3D图像序列，则生成具有第三帧率的3D输出图像序列，其中左视点中间图像，右视点中间图像和所述输入图像序列重复 包括在3D输出图像序列中，从包括在输入图像序列中的左视点图像序列中的至少一个左视点图像确定左视点中间图像，以及 从包括在输入图像序列中的右视点图像序列中的至少一个右视点图像确定右视点中间图像。

公开(公告)号：US08553029B2

公开(公告)日：2013-10-08

申请号：US12408772

申请日：2009-03-23

申请人： Yong-tae Kim ,  Sang-moo Park ,  Dae-sik Kim

发明人： Yong-tae Kim ,  Sang-moo Park ,  Dae-sik Kim

IPC分类号： G06T15/00

CPC分类号： H04N19/597 ,  H04N13/359 ,  H04N2213/007

摘要： A method of determining a two-dimensional (2D) or three-dimensional (3D) display mode is provided. An image sequence is received. Whether a current image included in the image sequence is a 2D or 3D image is determined. Based on a result of the determination, a 2D or 3D display mode for the image sequence is determined.

摘要翻译： 提供了一种确定二维（2D）或三维（3D）显示模式的方法。 接收图像序列。 确定包括在图像序列中的当前图像是2D还是3D图像。 基于确定的结果，确定图像序列的2D或3D显示模式。

公开(公告)号：US08526818B2

公开(公告)日：2013-09-03

申请号：US12747330

申请日：2009-04-28

申请人： Kwang-ok Kim ,  Yong-tae Kim ,  Dong-soo Lee

发明人： Kwang-ok Kim ,  Yong-tae Kim ,  Dong-soo Lee

IPC分类号： H04B14/00

CPC分类号： H04J3/1694 ,  H04Q11/0067 ,  H04Q2011/0064

摘要： A gigabit passive optical network (GPON) system for fiber to the home (FTTH) service must provide a down-stream data rate of an optical band to provide IPTV service with hundreds of channels to subscribers, and must be able to provide an upstream data rate of an optical band using a currently available BM-IC chip. A currently available BM-IC chip for a GPON has 1.244 Gbps and 2.488 Gbps modes. Accordingly, an optical network terminal (ONT) for a GPON that is capable of providing a downstream transmission band of 10-Gbps and an upstream transmission band of 1.244 Gbps or 2.488 Gbps, and a method for processing an upstream frame in the terminal, are provided. The GPON ONT can provide 20 Mbps, high-definition IPTV service with 500 channels and can provide both upstream data rates of 1.244 Gbps and 2.488 Gbps according to a user's selection without using an additional device.

摘要翻译： 用于光纤到家庭（FTTH）业务的千兆无源光网络（GPON）系统必须提供光带的下行数据速率，以向用户提供数百个信道的IPTV服务，并且必须能够提供上行数据 使用当前可用的BM-IC芯片的光学带宽率。 目前用于GPON的BM-IC芯片具有1.244 Gbps和2.488 Gbps模式。 因此，能够提供10Gbps的下行传输频带和1.244Gbps或2.488Gbps的上行传输频带的GPON的光网络终端（ONT）以及用于处理终端中的上行帧的方法是 提供。 GPON ONT可以提供具有500个通道的20 Mbps高清晰度IPTV服务，并可根据用户的选择提供1.244 Gbps和2.488 Gbps的上行数据速率，而无需使用其他设备。

公开(公告)号：US20100221006A1

公开(公告)日：2010-09-02

申请号：US12597850

申请日：2008-08-19

申请人： Bin-yeong Yoon ,  Man-soo Han ,  Sung-chang Kim ,  Hark Yoo ,  Dong-soo Lee ,  Jong-deog Kim ,  Kyeong-hwan Doo ,  Yong-tae Kim ,  Kwang-ok Kim ,  Bong-kyu Kim ,  Geun-yong Kim ,  Sung-hoon Kwak ,  Mun-seob Lee ,  Le Quan

发明人： Bin-yeong Yoon ,  Man-soo Han ,  Sung-chang Kim ,  Hark Yoo ,  Dong-soo Lee ,  Jong-deog Kim ,  Kyeong-hwan Doo ,  Yong-tae Kim ,  Kwang-ok Kim ,  Bong-kyu Kim ,  Geun-yong Kim ,  Sung-hoon Kwak ,  Mun-seob Lee ,  Le Quan

IPC分类号： H04J14/08

CPC分类号： H04J3/1694 ,  H04J2203/0067 ,  H04Q11/0067 ,  H04Q2011/0064

摘要： Provided are an apparatus and method for efficiently and dynamically allocating a bandwidth on a Time Division Multiple Access-based Passive Optical Network (TDMA PON). The dynamic bandwidth allocation apparatus for uplink data transmission of a plurality of Optical Network Units (ONUs) including a plurality of class queues corresponding to Transmission Container (T-CONT) types, the plurality of ONUs connected to an Optical Line Terminal (OLT) on a Passive Optical Network (PON), includes: a class queue information storage unit storing information regarding a bandwidth allocation period and an allocatable bandwidth amount for each T-CONT type; an allocation check table unit checking the bandwidth allocation period for the T-CONT type received from the class queue information storage unit, and determining an allocatable bandwidth amount for the T-CONT type; and a bandwidth allocation unit allocating an uplink bandwidth to the T-CONT type with reference to the bandwidth allocation period and the allocatable bandwidth amount for the T-CONT type, and re-allocating to each ONU an uplink bandwidth remaining after allocating a total uplink bandwidths to all T-CONT types.

摘要翻译： 提供了一种用于在基于时分多址接入的无源光网络（TDMA PON）上有效且动态地分配带宽的装置和方法。 用于包括对应于传输容器（T-CONT）类型的多个类队列的多个光网络单元（ONU）的上行链路数据传输的动态带宽分配装置，连接到光线路终端（OLT）上的多个ONU 无源光网络（PON）包括：类队列信息存储单元，存储关于每个T-CONT类型的带宽分配周期和可分配带宽量的信息; 分配检查表单元，检查从类队列信息存储单元接收到的T-CONT类型的带宽分配周期，以及确定T-CONT类型的可分配带宽量; 以及带宽分配单元，参照带宽分配期间和T-CONT类型的可分配带宽量向T-CONT类型分配上行链路带宽，并且在分配总上行链路之后向每个ONU重新分配剩余的上行链路带宽 所有T-CONT类型的带宽。

公开(公告)号：US20100103744A1

公开(公告)日：2010-04-29

申请号：US12588680

申请日：2009-10-23

申请人： Seung-jin Yang ,  Jeong-uk Han ,  Yong-tae Kim ,  Yong-suk Choi ,  Bae-seong Kwon

发明人： Seung-jin Yang ,  Jeong-uk Han ,  Yong-tae Kim ,  Yong-suk Choi ,  Bae-seong Kwon

IPC分类号： G11C16/04 ,  G11C11/34

CPC分类号： G11C16/0433

摘要： A non-volatile memory device includes a memory cell array with a plurality of unit memory cells arranged in a matrix pattern, each of the unit memory cells having first and second non-volatile memory transistors sharing a common source, and a selection transistor connected between the common source and one of the first and second non-volatile memory transistors, a first word line coupled to control gates of the first non-volatile memory transistors arranged in a column direction of the memory cell array, a second word line coupled to control gates of the second non-volatile memory transistors arranged in the column direction of the memory cell array, a selection line coupled to gates of the selected transistors arranged in the column direction of the memory cell array, and at least one bit line coupled to drains of the first and second non-volatile memory transistors.

摘要翻译： 一种非易失性存储器件包括具有以矩阵模式布置的多个单元存储单元的存储单元阵列，每个单元存储单元具有共享公共源的第一和第二非易失性存储器晶体管，以及连接在 公共源和第一和第二非易失性存储器晶体管中的一个，耦合到以存储单元阵列的列方向布置的第一非易失性存储器晶体管的控制栅极的第一字线，耦合到控制的第二字线 布置在存储单元阵列的列方向上的第二非易失性存储晶体管的栅极，耦合到沿着存储单元阵列的列方向布置的所选晶体管的栅极的选择线以及耦合到漏极的至少一个位线 的第一和第二非易失性存储器晶体管。

公开(公告)号：US20060128098A1

公开(公告)日：2006-06-15

申请号：US11349402

申请日：2006-02-07

申请人： Heeseog Jeon ,  Seung-beom Yoon ,  Yong-tae Kim ,  Yong-suk Choi

发明人： Heeseog Jeon ,  Seung-beom Yoon ,  Yong-tae Kim ,  Yong-suk Choi

IPC分类号： H01L21/336

CPC分类号： H01L27/115 ,  H01L21/28273 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/513 ,  H01L29/7881

摘要： A split gate type nonvolatile semiconductor memory device and a method of fabricating a split gate type nonvolatile semiconductor memory device are provided. A gate insulating layer and a floating-gate conductive layer are formed on a semiconductor substrate. A mask layer pattern is formed on the floating-gate conductive layer to define a first opening extending in a first direction. First sacrificial spacers having a predetermined width are formed on both sidewalls corresponding to the mask layer pattern. An inter-gate insulating layer is formed on the floating-gate conductive layer. The first sacrificial spacers are removed, and the floating-gate conductive layer is etched until the gate insulating layer is exposed. A tunneling insulating layer is formed on an exposed portion of the floating-gate conductive layer. A control-gate conductive layer is formed on a surface of the semiconductor substrate. Second sacrificial spacers having predetermined widths are formed on the control-gate conductive layer. A split control gate is formed in the first opening, by etching the exposed control-gate conductive layer. The remaining mask layer pattern and inter-gate insulating layer are etched until the floating-gate conductive layer is exposed. The exposed floating-gate conductive layer is etched to form a split floating gate in the first opening.

公开(公告)号：US20050035404A1

公开(公告)日：2005-02-17

申请号：US10899371

申请日：2004-07-26

申请人： Tae-kwang Yu ,  Hee-seog Jeon ,  Seung-beom Yoon ,  Yong-tae Kim

发明人： Tae-kwang Yu ,  Hee-seog Jeon ,  Seung-beom Yoon ,  Yong-tae Kim

IPC分类号： H01L29/41 ,  H01L21/265 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792 ,  H01L31/0328

CPC分类号： H01L29/66659 ,  H01L21/26586 ,  H01L21/28114 ,  H01L29/42376 ,  H01L29/665 ,  H01L29/7835

摘要： The present invention relates to a high voltage transistor and method of manufacturing the same. The high voltage transistor includes: a channel region which is formed in a semiconductor substrate; a gate insulating film which is formed on the channel region of the semiconductor substrate; a low concentration source region and a low concentration drain region having the channel region interposed therebetween and each being formed in the semiconductor substrate; a high concentration source region which is formed to be spaced away from the channel region by a first distance; a high concentration drain region which is formed to be spaced away from the channel region by a second distance that is larger than the first distance; a gate electrode which has a gate bottom portion interfacing with the gate insulating film over the channel region, and a gate top portion integrated with the gate bottom portion and protruding by a predetermined length from a top of the gate bottom portion to extend over the low concentration drain region; a first metal silicide layer which is formed on the high concentration source region; and a second metal silicide layer which is formed on the high concentration drain region.

摘要翻译： 本发明涉及高压晶体管及其制造方法。 高压晶体管包括：形成在半导体衬底中的沟道区; 形成在半导体衬底的沟道区上的栅极绝缘膜; 低浓度源极区和低浓度漏极区，其间具有沟道区，并且各自形成在半导体衬底中; 高浓度源区，其形成为与沟道区隔开第一距离; 高浓度漏区，其形成为与沟道区隔开距离大于第一距离的第二距离; 栅极电极，其具有与沟道区域上的栅极绝缘膜接合的栅极底部，以及与栅极底部一体化并且从栅极底部的顶部突出预定长度的栅极顶部，以在低于 浓度排水区; 形成在高浓度源区上的第一金属硅化物层; 以及形成在高浓度漏极区上的第二金属硅化物层。