公开(公告)号：US07829782B2

公开(公告)日：2010-11-09

申请号：US11113813

申请日：2005-04-25

申请人： Hideki Hakuma ,  Kenichi Okada ,  Kenji Tomita ,  Hisao Arimune

发明人： Hideki Hakuma ,  Kenichi Okada ,  Kenji Tomita ,  Hisao Arimune

IPC分类号： H01L31/042

CPC分类号： H01L31/03529 ,  H01L31/035281 ,  H01L31/068 ,  Y02E10/547

摘要： To provide an easy-to-manufacture, high-quality photovoltaic conversion device and an optical power generator and also to provide a manufacturing method with high production efficiency.To realize these, a photovoltaic conversion device is manufactured by a manufacturing method of a photovoltaic conversion device comprising steps of: (1) joining a lot of semiconductor particles 10 to a substrate 1; (2) forming a protective film 6 comprised of an oxide film, nitriding film, or oxynitriding film of a semiconductor constituting the semiconductor particle 10 on the surface of the semiconductor particle 10 except the junction where the semiconductor article 10 is joined to the substrate1; (3) forming an insulator 4 in a lower part between the adjoining semiconductor particles 10 on the substrate 1; (4) removing an upper part of the protective film 6 to allow an upper part of the semiconductor particle 10 to be exposed; and (5) forming an upper electrode 5 on the surface of the exposed upper part (connection area S) of the semiconductor particle 10 and the surface of the insulator 4.

摘要翻译： 提供易于制造，优质的光伏转换装置和光发电机，并且提供具有高生产效率的制造方法。 为了实现这些，通过光电转换装置的制造方法制造光电转换装置，包括以下步骤：（1）将大量半导体颗粒10接合到基板1; （2）在半导体颗粒10的与半导体产品10接合到基板1的连接处的半导体颗粒10的表面上形成由构成半导体颗粒10的半导体的氧化物膜，氮化膜或氮氧化膜构成的保护膜6; （3）在基板1上的相邻的半导体颗粒10之间的下部形成绝缘体4; （4）除去保护膜6的上部，使半导体粒子10的上部露出; 和（5）在半导体颗粒10的暴露的上部（连接区域S）的表面和绝缘体4的表面上形成上部电极5。

公开(公告)号：US20050247338A1

公开(公告)日：2005-11-10

申请号：US11113813

申请日：2005-04-25

申请人： Hideki Hakuma ,  Kenichi Okada ,  Kenji Tomita ,  Hisao Arimune

发明人： Hideki Hakuma ,  Kenichi Okada ,  Kenji Tomita ,  Hisao Arimune

IPC分类号： H01L31/04 ,  H01L31/00 ,  H01L31/0352 ,  H01L31/068

CPC分类号： H01L31/03529 ,  H01L31/035281 ,  H01L31/068 ,  Y02E10/547

摘要： To provide an easy-to-manufacture, high-quality photovoltaic conversion device and an optical power generator and also to provide a manufacturing method with high production efficiency. To realize these, a photovoltaic conversion device is manufactured by a manufacturing method of a photovoltaic conversion device comprising steps of: (1) joining a lot of semiconductor particles 10 to a substrate 1; (2) forming a protective film 6 comprised of an oxide film, nitriding film, or oxynitriding film of a semiconductor constituting the semiconductor particle 10 on the surface of the semiconductor particle 10 except the junction where the semiconductor article 10 is joined to the substrate1; (3) forming an insulator 4 in a lower part between the adjoining semiconductor particles 10 on the substrate 1; (4) removing an upper part of the protective film 6 to allow an upper part of the semiconductor particle 10 to be exposed; and (5) forming an upper electrode 5 on the surface of the exposed upper part (connection area S) of the semiconductor particle 10 and the surface of the insulator 4.

摘要翻译： 提供易于制造，优质的光伏转换装置和光发电机，并且提供具有高生产效率的制造方法。 为了实现这些，通过光电转换装置的制造方法制造光电转换装置，包括以下步骤：（1）将大量半导体颗粒10接合到基板1; （2）在半导体颗粒10的与半导体产品10接合到基板1的接合部分的外表面上形成由构成半导体颗粒10的半导体的氧化物膜，氮化膜或氮氧化膜构成的保护膜6 ; （3）在基板1上的相邻的半导体颗粒10之间的下部形成绝缘体4; （4）除去保护膜6的上部，使半导体粒子10的上部露出; 和（5）在半导体颗粒10的暴露的上部（连接区域S）的表面和绝缘体4的表面上形成上部电极5。

公开(公告)号：US4954232A

公开(公告)日：1990-09-04

申请号：US358554

申请日：1989-05-26

申请人： Takashi Yamada ,  Hisao Arimune ,  Takashi Maeda

发明人： Takashi Yamada ,  Hisao Arimune ,  Takashi Maeda

IPC分类号： G03G5/16 ,  G11B5/73 ,  G11B5/738 ,  G11B11/105 ,  C23C14/14

CPC分类号： G11B5/7325 ,  G03G5/16 ,  G11B11/10586 ,  G11B11/10591 ,  G11B5/738

摘要： In a magneto-optical recording element comprising a substrate, a magnetic layer and a dielectric layer, the dielectric layer is formed by deposition of a composition comprising Si.sub.3 N.sub.4 and a refractive index-improving agent such as Al.sub.2 O.sub.3 or Y.sub.2 O.sub.3. This dielectric layer has a high refractive index and the enhancement effect is improved. Moreover, this dielectric layer is excellent in the adhesion and resistance characteristics.

公开(公告)号：US08674210B2

公开(公告)日：2014-03-18

申请号：US13133138

申请日：2010-09-29

申请人： Daisuke Nishimura ,  Toshifumi Sugawara ,  Ken Nishiura ,  Norihiko Matsushima ,  Yosuke Inomata ,  Hisao Arimune ,  Tsuyoshi Uesugi

发明人： Daisuke Nishimura ,  Toshifumi Sugawara ,  Ken Nishiura ,  Norihiko Matsushima ,  Yosuke Inomata ,  Hisao Arimune ,  Tsuyoshi Uesugi

IPC分类号： H01L31/042 ,  H02N6/00 ,  H01L31/00 ,  H01L21/00

CPC分类号： H01L31/022425 ,  H01L31/046 ,  H01L31/0465 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

摘要： To provide a photoelectric conversion device having a high photoelectric conversion efficiency, a photoelectric conversion device 21 includes a substrate 1, a plurality of lower electrodes 2 on the substrate 1 comprising a metal element, a plurality of photoelectric conversion layers 33 comprising a chalcogen compound semiconductor formed on the plurality of lower electrodes 2 and separated from one another on the lower electrodes 2, a metal-chalcogen compound layer 8 comprising the metal element and a chalcogen element included in the chalcogen compound semiconductor formed between the lower electrode 2 and the photoelectric conversion layer 33, an upper electrode 5 formed on the photoelectric conversion layer 33, and a connection conductor 7 electrically connecting, in a plurality of the photoelectric conversion layers 33, the upper electrode 5 to the lower electrode 2 without interposition of the metal-chalcogen compound layer 8.

摘要翻译： 为了提供具有高光电转换效率的光电转换装置，光电转换装置21包括基板1，包括金属元件的基板1上的多个下电极2，包括硫属化合物半导体的多个光电转换层33 形成在多个下电极2上并在下电极2上彼此分离，包括金属元素化合物层8和包含在下电极2和光电转换器之间的硫属化合物半导体中的硫属元素 层33，形成在光电转换层33上的上电极5和连接导体7，在多个光电转换层33中电连接上电极5与下电极2而不插入金属 - 硫属化合物 第8层。

公开(公告)号：US5232790A

公开(公告)日：1993-08-03

申请号：US691134

申请日：1991-04-25

申请人： Hisao Arimune ,  Mituo Miyazaki ,  Hiroki Tanaka

发明人： Hisao Arimune ,  Mituo Miyazaki ,  Hiroki Tanaka

IPC分类号： G11B11/10 ,  C23C14/06 ,  C23C14/34 ,  G11B11/105

CPC分类号： C23C14/0676 ,  C23C14/34 ,  G11B11/10582 ,  G11B11/10584 ,  G11B11/10586 ,  Y10S428/90 ,  Y10S430/146

摘要： The refractive index of a dielectric layer between a transparent substrate and a magneto-optical recording layer is varied across the thickness, with a portion of the layer on the substrate side having a lower refractive index and the other portion on the magneto-optical recording layer side having a higher refractive index, to prevent the disc from warping. To increase the refractive index within the the dielectric layer, the argon pressure is lowered in the course of the sputtering. Alternatively, an interruption of the sputtering can reduce warpage.

摘要翻译： 透明基板和磁光记录层之间的电介质层的折射率在整个厚度上变化，衬底侧的该层的一部分具有较低的折射率，另一部分在磁光记录层上 具有更高的折射率，以防止盘翘曲。 为了增加电介质层内的折射率，在溅射过程中氩压降低。 或者，溅射的中断可以减少翘曲。

公开(公告)号：US4995024A

公开(公告)日：1991-02-19

申请号：US264159

申请日：1988-10-28

申请人： Hisao Arimune ,  Takashi Maeda ,  Mitsuo Miyazaki ,  Yasuo Nishiguchi

发明人： Hisao Arimune ,  Takashi Maeda ,  Mitsuo Miyazaki ,  Yasuo Nishiguchi

IPC分类号： G11B11/105

CPC分类号： G11B11/10582 ,  Y10S428/90

摘要： Disclosed is a magneto-optical recording element comprising a dielectric layer and an amorphous perpendicular magnetization film on a substrate, wherein the perpendicular magnetization film is a perpendicular magnetization film comprising at least Gd element as the rare earth metal element and Fe metal as the transition metal component, in which the Fe sub-lattice moments are dominant, the dielectric layer is a dielectric layer composed of amorphous silicon nitride, the magnetization Ms of the perpendicular magnetization film is set within a range represented by the following formula (1):20 emu/cc.ltoreq.Ms.ltoreq.70 emu/cc (1)and the product of the magnetization Ms and the coercive force Hc is set within a range represented by the following formula (2):100 emu.multidot.KOe/cc.ltoreq.Ms.multidot.Hc.ltoreq.500 emu.multidot.KOe/cc(2)This magneto-optical recording material is suitable for the magnetic field modulation recording method, and even if overwriting is carried out in the recording method, the element shows excellent characteristics and high performances.

摘要翻译： 公开了一种磁光记录元件，其包括在基板上的电介质层和非晶垂直磁化膜，其中垂直磁化膜是至少包括作为稀土金属元素的Gd元素和作为过渡金属的Fe金属的垂直磁化膜 其中Fe子晶格矩是主要的，介电层是由非晶氮化硅构成的电介质层，垂直磁化膜的磁化强度Ms设定在由下式（1）表示的范围内：20emu / cc

公开(公告)号：US4851096A

公开(公告)日：1989-07-25

申请号：US42273

申请日：1987-04-24

申请人： Takashi Yamada ,  Hisao Arimune ,  Takashi Maeda

发明人： Takashi Yamada ,  Hisao Arimune ,  Takashi Maeda

IPC分类号： G03G5/16 ,  G11B5/73 ,  G11B5/738 ,  G11B11/105 ,  C23C14/14

CPC分类号： G11B5/7325 ,  G03G5/16 ,  G11B11/10586 ,  G11B11/10591 ,  G11B5/738

摘要： In a magneto-optical recording element comprising a substrate, a magentic layer and a dielectric layer, the dielectric layer is formed by deposition of a composition comprising Si.sub.3 H.sub.4 and a refractive index-improving agent such as Al.sub.2 O.sub.3 or Y.sub.2 O.sub.3. This dielectric layer has a high refractive index and the enhancement effect is improved. Moreover, this dielectric layer is excellent in the adhesion and resistance characteristics.

摘要翻译： 在包括基板，磁性层和电介质层的磁光记录元件中，通过沉积包括Si 3 H 4和诸如Al 2 O 3或Y 2 O 3的折射率改进剂的组合物形成电介质层。 该介电层具有高折射率，并且提高了增强效果。 此外，该电介质层的粘合性和电阻特性优异。

公开(公告)号：US4680742A

公开(公告)日：1987-07-14

申请号：US752927

申请日：1985-07-08

申请人： Takashi Yamada ,  Hisao Arimune ,  Takashi Maeda

发明人： Takashi Yamada ,  Hisao Arimune ,  Takashi Maeda

IPC分类号： G03G5/16 ,  G11B5/73 ,  G11B5/738 ,  G11B11/105 ,  G11B7/24 ,  G11B5/64

CPC分类号： G11B5/7325 ,  G03G5/16 ,  G11B11/10586 ,  G11B11/10591 ,  G11B5/738 ,  Y10S430/146

摘要： In a magneto-optical recording element comprising a substrate, a magnetic layer and a dielectric layer, the dielectric layer is formed by deposition of a composition comprising Si.sub.3 N.sub.4 and a refractive index-improving agent such as Al.sub.2 O.sub.3 or Y.sub.2 O.sub.3. This dielectric layer has a high refractive index and the enhancement effect is improved. Moreover, this dielectric layer is excellent in the adhesion and resistance characteristics.

摘要翻译： 在包括基板，磁性层和电介质层的磁光记录元件中，通过沉积包含Si 3 N 4和诸如Al 2 O 3或Y 2 O 3的折射率改进剂的组合物形成电介质层。 该介电层具有高折射率，并且提高了增强效果。 此外，该电介质层的粘合性和电阻特性优异。

公开(公告)号：US20090293934A1

公开(公告)日：2009-12-03

申请号：US12092704

申请日：2006-11-08

申请人： Kenichi Okada ,  Takeshi Kyouda ,  Kouichi Hayashi ,  Kenji Tomita ,  Hisao Arimune

发明人： Kenichi Okada ,  Takeshi Kyouda ,  Kouichi Hayashi ,  Kenji Tomita ,  Hisao Arimune

IPC分类号： H01L31/00 ,  H02N6/00

CPC分类号： H01L31/022433 ,  H01L31/02168 ,  H01L31/035281 ,  H01L31/048 ,  H01L31/0543 ,  H01L31/0547 ,  Y02E10/52

摘要： A photoelectric conversion device in which a plurality of crystal semiconductor particles 2 of a first conductivity type having a surface layer thereof a semiconductor part 4 of a second conductivity type are bonded at spaced intervals on a surface of a conductive substrate 1, an insulating layer 3 is formed on the conductive substrate 1 extending between the semiconductor particles 2 and 2, a light-transmitting conducting layer 5 is formed on the insulating layer 3 and the crystal semiconductor particles 2, and a collector electrode 7 is formed on a surface of the light-transmitting conducting layer 5. The collector electrode 7 is comprised of a conductor plate with a plurality of through-holes 40 to admit external light into the crystal semiconductor particles 2. The light-transmitting light collection layer 8 is disposed on the light-transmitting conducting layer 5 and the collector electrode 7. Simple manufacturing steps eliminate shadow loss while suppressing resistance loss, thereby providing the high-efficiency photoelectric conversion device.

摘要翻译： 一种光电转换装置，其中具有第一导电类型的具有第二导电类型的半导体部分4的表面层的多个晶体半导体颗粒2以间隔的间隔接合在导电基板1的表面上，绝缘层3 形成在半导体粒子2和2之间延伸的导电基板1上，在绝缘层3和结晶半导体粒子2上形成有透光导电层5，在该光的表面上形成集电极7 发射导电层5.集电极7由具有多个通孔40的导体板构成，以将外部光吸收到晶体半导体颗粒2中。透光聚光层8设置在透光 导电层5和集电极7.简单的制造步骤消除阴影损失同时抑制电阻损耗 eby提供高效光电转换装置。

公开(公告)号：US20050205126A1

公开(公告)日：2005-09-22

申请号：US11084844

申请日：2005-03-18

申请人： Hiroki Okui ,  Yoji Seki ,  Yoshio Miura ,  Hisao Arimune

发明人： Hiroki Okui ,  Yoji Seki ,  Yoshio Miura ,  Hisao Arimune

IPC分类号： H01L31/04 ,  H01L25/00

CPC分类号： H01L31/035281 ,  H01L31/022425 ,  H01L31/03529 ,  H01L31/18 ,  Y02E10/50

摘要： A photovoltaic conversion device has a substrate 1 as a lower electrode having a first region 31 and a second region 32 adjacent to the first region, a lot of semiconductor particles 20 joined to the first region 31, an insulator 4 formed between the semiconductor particles 20 on the substrate 1 in the first region 31 and on the substrate 1 in the second region 32, a transparent conductive layer 5 as an upper electrode formed so as to cover the upper part of the semiconductor particles 20 in the first region 31 and the insulator 4 in the first region 31, and a collecting electrode formed of a finger electrode 15 arranged on the transparent conductive layer 5 in the first region 31 and a bus bar electrode 16 which is arranged in the second region 32 and connected to the finger electrode 15. By making the thickness of the insulator 4 in the second region 32 larger than that of the insulator 4 in the first region, even if generated photocurrents concentrate on the bus bar electrode 16, insulating properties between the substrate 1 and the transparent conductive layer 5 can be ensured stably, thereby to achieve high photovoltaic conversion efficiency.

摘要翻译： 光电转换装置具有作为下电极的基板1，具有与第一区域相邻的第一区域31和第二区域32，与第一区域31接合的大量半导体颗粒20，形成在半导体颗粒20之间的绝缘体 在第一区域31中的基板1和第二区域32中的基板1上，形成作为上部电极的透明导电层5，以覆盖第一区域31中的半导体颗粒20的上部，绝缘体 第一区域31中的透明导电层5上形成的指状电极15和布置在第二区域32中并连接到指状电极15的母线电极16的集电电极 。 通过使第二区域32中的绝缘体4的厚度比第一区域中的绝缘体4的厚度大，即使产生的光电流集中在汇流条电极16上，基板1和透明导电层5之间的绝缘性也可以 稳定地确保光电转换效率。