公开(公告)号：US20100246932A1

公开(公告)日：2010-09-30

申请号：US12750023

申请日：2010-03-30

申请人： Yukio INAZUKI ,  Hideo Kaneko ,  Hiroki Yoshikawa

发明人： Yukio INAZUKI ,  Hideo Kaneko ,  Hiroki Yoshikawa

IPC分类号： G06K9/00

CPC分类号： G03F1/84 ,  G03F7/70783

摘要： A photomask blank having a film on a substrate is inspected by (A) measuring a surface topography of a photomask blank having a film to be inspected for stress, (B) removing the film from the photomask blank to provide a treated substrate, (C) measuring a surface topography of the treated substrate, and (D) comparing the surface topography of the photomask blank with the surface topography of the treated substrate, thereby evaluating a stress in the film.

摘要翻译： 通过（A）测量具有要检查的应力膜的光掩模坯料的表面形貌来检查在基板上具有膜的光掩模坯料，（B）从光掩模坯料除去膜以提供经处理的基板（C ）测量经处理的基底的表面形貌，以及（D）将光掩模毛坯的表面形貌与经处理的基底的表面形貌进行比较，从而评估膜中的应力。

公开(公告)号：US20120064438A1

公开(公告)日：2012-03-15

申请号：US13228501

申请日：2011-09-09

申请人： Hiroki YOSHIKAWA ,  Yukio Inazuki ,  Ryuji Koitabashi ,  Hideo Kaneko ,  Takashi Haraguchi ,  Yosuke Kojima ,  Tomohito Hirose

发明人： Hiroki YOSHIKAWA ,  Yukio Inazuki ,  Ryuji Koitabashi ,  Hideo Kaneko ,  Takashi Haraguchi ,  Yosuke Kojima ,  Tomohito Hirose

IPC分类号： G03F7/20 ,  H01L21/31 ,  G03F1/00

CPC分类号： G03F1/72 ,  G03F1/32 ,  G03F1/48 ,  G03F1/50

摘要： A photomask blank has a film of a transition metal/silicon base material comprising a transition metal, silicon, oxygen and nitrogen, having an oxygen content of at least 3 atom %, and satisfying the formula: 4×CSi/100−6×CM/100>1 wherein CSi is a silicon content in atom % and CM is a transition metal content in atom %.

摘要翻译： 光掩模坯料具有包含氧含量为至少3原子％的过渡金属，硅，氧和氮的过渡金属/硅基材的膜，并且满足下式：4×CSi / 100-6×CM 其中CSi是原子％的硅含量，CM是原子％的过渡金属含量。

公开(公告)号：US20100248091A1

公开(公告)日：2010-09-30

申请号：US12750121

申请日：2010-03-30

申请人： Yukio INAZUKI ,  Hideo Kaneko ,  Hiroki Yoshikawa

发明人： Yukio INAZUKI ,  Hideo Kaneko ,  Hiroki Yoshikawa

IPC分类号： G03F1/00 ,  G01B11/24

CPC分类号： G03F1/84 ,  G03F7/70783

摘要： A photomask blank which is manufactured by depositing a phase shift film on a substrate and irradiating the phase shift film with high-energy radiation to effect substrate shape adjusting treatment is inspected by measuring a surface topography of the photomask blank after the substrate shape adjusting treatment, removing the phase shift film from the photomask blank, measuring a surface topography of the treated substrate after removal of the phase shift film, and comparing the surface topographies, thereby evaluating a warpage change before and after removal of the phase shift film, due to a stress of the phase shift film having undergone substrate shape adjusting treatment.

摘要翻译： 通过在基板形状调整处理之后测量光掩模坯料的表面形貌来检查通过在基板上沉积相变膜并用高能辐射照射相移膜来进行基板形状调整处理而制造的光掩模坯料， 从光掩模坯料中去除相移膜，在移除相移膜之后测量处理过的基板的表面形貌，并比较表面形貌，由此评估在移相膜之前和之后的翘曲变化，由于 经过衬底形状调整处理的相移膜的应力。

公开(公告)号：US07179567B2

公开(公告)日：2007-02-20

申请号：US10606894

申请日：2003-06-27

申请人： Yukio Inazuki ,  Masayuki Nakatsu ,  Tsuneo Numanami ,  Atsushi Tajika ,  Hideo Kaneko ,  Satoshi Okazaki

发明人： Yukio Inazuki ,  Masayuki Nakatsu ,  Tsuneo Numanami ,  Atsushi Tajika ,  Hideo Kaneko ,  Satoshi Okazaki

IPC分类号： G03F1/00

CPC分类号： G03F1/32 ,  G03F1/26

摘要： In a phase shift mask blank comprising a transparent substrate and a phase shift film thereon, after the phase shift film is formed on the substrate, it is surface treated with ozone water having an ozone concentration of at least 1 ppm. The resulting phase shift film is of quality in that it experiences minimized changes of phase difference and transmittance upon immersion in chemical liquid during subsequent mask cleaning step or the like.

摘要翻译： 在包括透明基板和相移膜的相移掩模坯料中，在基板上形成相移膜之后，用臭氧浓度为至少1ppm的臭氧水进行表面处理。 所得到的相移膜的质量在于，在随后的掩模清洁步骤等期间，其经历了在浸入化学液体中时相位差和透射率的最小化变化。

公开(公告)号：US06514642B2

公开(公告)日：2003-02-04

申请号：US09790886

申请日：2001-02-23

申请人： Satoshi Okazaki ,  Tamotsu Maruyama ,  Yukio Inazuki ,  Hideo Kaneko ,  Shinichi Kohno

发明人： Satoshi Okazaki ,  Tamotsu Maruyama ,  Yukio Inazuki ,  Hideo Kaneko ,  Shinichi Kohno

IPC分类号： G03F900

CPC分类号： G03F1/30 ,  C23C14/0057 ,  C23C14/0682 ,  Y10T428/31678

摘要： In a phase shift mask comprising an exposure light-transmitting substrate and a second light-transmitting region thereon, the second light-transmitting region functions as a phase shifter and is made of a fluorine-doped molybdenum silicide film or fluorine-doped chromium silicide film formed by a sputtering technique that uses molybdenum metal, chromium metal, molybdenum silicide or chromium silicide as the target and SiF2 as the reactive gas. The phase shifter has a high refractive index to short-wavelength exposure light, enabling a 180-degree phase change to be achieved at a minimum film thickness, and also has a good stability to such light. The phase shift mask can be used to fabricate semiconductor integrated circuits to a smaller minimum feature size and a higher level of integration.

摘要翻译： 在包括曝光透光基板和其上的第二透光区域的相移掩模中，第二透光区域用作移相器，并且由氟掺杂的硅化钼膜或氟掺杂的硅化铬膜 通过使用钼金属，铬金属，硅化钼或硅化铬作为靶的溅射技术形成，SiF2作为反应气体。 移相器对短波长曝光光具有高折射率，能够在最小膜厚度下实现180度相位变化，并且对于这种光也具有良好的稳定性。 相移掩模可用于将半导体集成电路制造成更小的最小特征尺寸和更高的集成度。

公开(公告)号：US5743323A

公开(公告)日：1998-04-28

申请号：US231667

申请日：1994-04-25

申请人： Haruo Ohguro ,  Toshihiro Kosuge ,  Katsuhiko Kawamoto ,  Ryuuzou Hanzawa ,  Shogo Matsumura ,  Hiroyuki Kawai ,  Hiroyuki Nakashima ,  Yukio Morimoto ,  Youji Ao ,  Tsutomu Fujii ,  Hideo Kaneko ,  Hatsuyoshi Kumashiro

发明人： Haruo Ohguro ,  Toshihiro Kosuge ,  Katsuhiko Kawamoto ,  Ryuuzou Hanzawa ,  Shogo Matsumura ,  Hiroyuki Kawai ,  Hiroyuki Nakashima ,  Yukio Morimoto ,  Youji Ao ,  Tsutomu Fujii ,  Hideo Kaneko ,  Hatsuyoshi Kumashiro

IPC分类号： B22D11/04 ,  B22D11/045 ,  B22D11/047 ,  B22D11/10

CPC分类号： B22D11/047 ,  B22D11/045

摘要： A continuous casting apparatus comprises continuously supplying molten metal from a tundish to a cooled mold having an inlet and an outlet at least through a break ring, forming a cast section by continuously cooling the molten metal in the mold and starting the solidification of the molten metal below its surface, and intermittently withdrawing the cast section with respect to the mold through its outlet. During continuous casting, a sealing gas having a pressure higher than atmospheric and being soluble in the molten metal is invariable supplied to the entirety of the contact area of the mold and the break ring.

摘要翻译： 连续铸造设备包括将中间包中的熔融金属连续地供给至少通过断环的入口和出口的冷却模具，通过连续冷却模具中的熔融金属并开始熔融金属的固化形成铸造部分 在其表面下方，并通过其出口间歇性地将铸造部分相对于模具取出。 在连续铸造期间，不断地将压力高于大气压并且可溶于熔融金属的密封气体提供给模具和断环的整个接触区域。

公开(公告)号：US5720861A

公开(公告)日：1998-02-24

申请号：US516046

申请日：1995-08-17

申请人： Hideo Kaneko ,  Katsushi Tokunaga ,  Yoshio Tawara

发明人： Hideo Kaneko ,  Katsushi Tokunaga ,  Yoshio Tawara

IPC分类号： G11B5/73 ,  G11B5/851 ,  C23C14/34

CPC分类号： G11B5/7315 ,  G11B5/851

摘要： An improvement is proposed in the method for the preparation of a magnetic recording medium comprising a non-magnetic substrate plate of silicon and a magnetic recording layer formed on the substrate surface by the method of bias-sputtering, by which the magnetic recording layer can be imparted with an unexpectedly large coercive force. The improvement can be accomplished by the use of a silicon substrate plate which has a volume resistivity not exceeding 2 ohm-cm at room temperature. The improvement is more remarkable when the contact resistance between the silicon substrate plate and the substrate holder is kept not to exceed 10 kohm during the bias-sputtering for the formation of the magnetic recording layer on the substrate surface.

摘要翻译： 在通过偏置溅射的方法制备磁记录介质的方法中提出了一种磁记录介质的方法，所述磁记录介质包括硅非磁性基板和形成在基板表面上的磁记录层，通过该方法磁记录层可以 赋予了意想不到的大矫顽力。 可以通过使用在室温下体积电阻率不超过2欧姆 - 厘米的硅衬底板来实现改进。 当在衬底表面上形成磁记录层的偏压溅射期间，当硅衬底板和衬底保持器之间的接触电阻保持不超过10Kohm时，这种改进是更显着的。

公开(公告)号：US5335715A

公开(公告)日：1994-08-09

申请号：US742422

申请日：1991-08-08

申请人： Haruo Ohguro ,  Toshihiro Kosuge ,  Ryuuzou Hanzawa ,  Shogo Matsumura ,  Hiroyuki Kawai ,  Youji Ao ,  Tsutomu Fujii ,  Hideo Kaneko ,  Hatsuyoshi Kumashiro

发明人： Haruo Ohguro ,  Toshihiro Kosuge ,  Ryuuzou Hanzawa ,  Shogo Matsumura ,  Hiroyuki Kawai ,  Youji Ao ,  Tsutomu Fujii ,  Hideo Kaneko ,  Hatsuyoshi Kumashiro

IPC分类号： B22D11/04 ,  B22D11/045 ,  B22D11/047 ,  B22D11/00

CPC分类号： B22D11/047 ,  B22D11/045

摘要： A continuous cast method comprises continuously supplying molten metal from a tundish through a break ring to a cooled mold having an inlet and an outlet. A cast section is formed by continuously cooling the molten metal in the mold and starting the solidification of the molten metal below its surface and intermittently withdrawing the cast section with respect to the mold through its outlet. During continuous casting, a sealing gas having a pressure higher than atmospheric and soluble in the molten metal is constantly supplied to the entirety of the contact area of the mold and the break ring.

摘要翻译： 连续铸造方法包括将熔融金属从中间包通过断裂环连续供应到具有入口和出口的冷却模具。 通过连续冷却模具中的熔融金属并使熔融金属在其表面下方的凝固开始并且通过其出口相对于模具间歇地取出铸造部分而形成铸造部分。 在连续铸造期间，不断地向模具和断环的接触区域的整体提供具有高于大气压并且可溶于熔融金属的压力的密封气体。

公开(公告)号：US4495982A

公开(公告)日：1985-01-29

申请号：US441704

申请日：1982-11-15

申请人： Hideo Kaneko ,  Hatuyoshi Kumashiro ,  Akira Iwata

发明人： Hideo Kaneko ,  Hatuyoshi Kumashiro ,  Akira Iwata

IPC分类号： B22D11/10 ,  B22D11/047 ,  B22D11/115 ,  B22D11/16

CPC分类号： B22D11/115 ,  B22D11/047

摘要： A horizontal continuous casting method for continuously feeding a molten metal stored in a tundish through a tundish nozzle located in the vicinity of the tundish at its bottom to a mold horizontally connected to the tundish nozzle to produce a strand, wherein an electromagnetic field generating device is arranged in the vicinity of the boundary between the tundish nozzle and the mold for exerting an electromagnetic force directed toward a center of the molten metal flowing through the vicinity of the boundary or in a strand withdrawing direction, to separate the molten metal from the inner surface of the tundish mozzle anterior to the boundary with respect to the strand withdrawing direction, to allow the molten metal to come into contact with the inner surface of the mold posterior to the boundary with respect to the strand withdrawing direction. Control of the electromagnetic force exerted on the molten metal is effected by the electromagnetic field generating device arranged in the vicinity of the boundary in such a manner that a point at which the molten metal begins to come into contact with the inner surface of the mold coincides with a predetermined point. The electromagnetic force may also be controlled in such a manner that the points at which the molten metal begins to come into contact with the inner surface of the mold are brought to the same position peripherally of the molten metal with respect to the axis thereof.

摘要翻译： 一种水平连续铸造方法，用于通过位于中间包底部附近的中间包喷嘴将存储在中间包中的熔融金属连续地供给到与中间包喷嘴水平连接的模具以产生绞合线，其中电磁场产生装置是 布置在中间包喷嘴和模具之间的边界附近，用于施加指向流经边界附近或以线材退出方向的熔融金属的中心的电磁力，以将熔融金属与内表面分离 的中间包堰相对于股线退出方向在边界之前，允许熔融金属相对于股线退出方向与边界的后表面接触。 施加在熔融金属上的电磁力的控制是通过布置在边界附近的电磁场产生装置以熔融金属开始与模具内表面接触的点重合的方式实现的 具有预定点。 电磁力也可以以使熔融金属开始与模具的内表面接触的点相对于其熔融金属在熔融金属的周围处于相同位置的方式进行控制。

公开(公告)号：US4424432A

公开(公告)日：1984-01-03

申请号：US956329

申请日：1978-10-31

申请人： Hideo Kaneko ,  Makoto Onoue

发明人： Hideo Kaneko ,  Makoto Onoue

IPC分类号： B23H7/08 ,  B23K35/04 ,  C22C9/00 ,  B23K9/16

CPC分类号： B23H7/08

摘要： A method of electrical machining by the travelling-wire EDM process is improved by utilizing as the wire electrode for increased removal rate and reduced wear an electrode material which is drawn from a composition of 0.1 to 3% by weight zirconium, 0.3 to 10% zinc and the balance copper.

摘要翻译： 通过利用作为线电极用于提高去除率和减少磨损的电线材料，通过使用0.1〜3重量％的锆，0.3〜10重量％的锌， 和铜的平衡。