公开(公告)号：US12243959B2

公开(公告)日：2025-03-04

申请号：US17229051

申请日：2021-04-13

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Harald König ,  Jens Ebbecke ,  Alfred Lell ,  Sven Gerhard ,  Clemens Vierheilig

IPC: H01S5/02 ,  H01L33/00 ,  H01L33/08 ,  H01L33/26

Abstract: An optoelectronic semiconductor device and a method for manufacturing an optoelectronic semiconductor device are disclosed. In an embodiment an optoelectronic semiconductor device includes a semiconductor body having a first region of a first conductive type, an active region configured to generate electromagnetic radiation, a second region of a second conductive type and a coupling-out surface configured to couple-out the electromagnetic radiation, wherein the first region, the active region and the second region are arranged along a stacking direction, wherein the active region extends from a rear surface opposite the coupling-out surface to the coupling-out surface along a longitudinal direction transverse to or perpendicular to the stacking direction, and wherein the coupling-out surface is arranged plane-parallel to the rear surface.

公开(公告)号：US20240322070A1

公开(公告)日：2024-09-26

申请号：US18580122

申请日：2022-07-20

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Jens Ebbecke

IPC: H01L33/00 ,  H01L33/40

CPC classification number: H01L33/0093 ,  H01L33/40 ,  H01L2933/0016

Abstract: In an embodiment a method includes providing at least one component attached to a first carrier via a support holder, positioning a light-conducting lifting element with a light emitting surface opposite the transfer area, generating a first laser light pulse through the light emitting surface, locally melting a transfer material between the light emitting surface and the transfer area caused by the first laser light pulse, connecting the light emitting surface to the transfer area with the melted transfer material, lifting the at least one component so as to separate the component from the support holder, positioning the at least one component above a deposition area, generating a second laser light pulse through the light emitting surface so that the transfer material is melted again and moving the lifting element away from the transfer area before the transfer material solidifies and so that the component remains on the deposition area.

公开(公告)号：US20230063982A1

公开(公告)日：2023-03-02

申请号：US17792991

申请日：2021-01-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Jens Ebbecke

IPC: H01S5/20

Abstract: The semiconductor laser diode includes a semiconductor layer sequence having an active zone. The semiconductor layer sequence has a shape of a generalized cylinder or a frustum, and a main axis of the semiconductor layer sequence is perpendicular to a main extension plane of the semiconductor layer sequence. The semiconductor layer sequence has a core region and an edge region directly adjacent to the core region. The main axis passes through the core region. The edge region borders the core region in directions perpendicular to the main axis. The semiconductor layer sequence has a larger refractive index in the core region than in the edge region.

公开(公告)号：US20220102941A1

公开(公告)日：2022-03-31

申请号：US17596642

申请日：2020-07-09

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin Hetzl ,  Petrus Sundgren ,  Jens Ebbecke ,  Uwe Strauß

IPC: H01S5/20 ,  H01S5/028 ,  H01S5/02 ,  H01S5/10 ,  H01S5/343

Abstract: In an embodiment, an edge-emitting semiconductor laser diode includes a growth substrate, a semiconductor layer sequence located on the growth substrate, the semiconductor layer sequence having an active layer and an etch stop layer and two facets located opposite each other, wherein the facets bound the semiconductor layer sequence in a lateral direction, wherein the semiconductor layer sequence includes two edge regions adjoining the facets and a central region directly adjoining both edge regions, wherein, within each of the edge regions, a volume fraction of the active layer in the semiconductor layer sequence is smaller than in the central region, wherein the active layer is spaced apart from one facet, wherein a distance of the active layer to the facet varies along a direction parallel to this facet, and wherein the etch stop layer is arranged between the growth substrate and the active layer.

公开(公告)号：US11056628B2

公开(公告)日：2021-07-06

申请号：US16348609

申请日：2018-02-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Jens Ebbecke

IPC: H01L33/62 ,  H01L25/075 ,  H01L33/40 ,  H01L33/00 ,  H01L33/20

Abstract: A method of manufacturing an optoelectronic semiconductor chip includes providing a growth substrate, growing a semiconductor layer sequence on the growth substrate, depositing a metallization on a side of the semiconductor layer sequence remote from the growth substrate, depositing a layer on the metallization, coupling a carrier to the layer on a side of the layer remote from the semiconductor layer sequence, separating the growth substrate from the semiconductor layer sequence, depositing an electrically conductive layer on a side of the semiconductor layer sequence facing away from the carrier, separating the carrier from the layer, thereby forming a layer stack with the metallization, the semiconductor layer sequence, the electrically conductive layer and a coupling layer including at least a part of a further material of the layer remaining on a side of the metallization remote from the semiconductor layer sequence, and coupling the layer stack to a chip carrier.

公开(公告)号：US11005005B2

公开(公告)日：2021-05-11

申请号：US16409527

申请日：2019-05-10

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Harald König ,  Jens Ebbecke ,  Alfred Lell ,  Sven Gerhard ,  Clemens Vierheilig

IPC: H01S5/02 ,  H01L33/08 ,  H01L33/26 ,  H01L33/00

Abstract: An optoelectronic semiconductor device and a method for manufacturing an optoelectronic semiconductor device are disclosed. In an embodiment an optoelectronic semiconductor device includes a semiconductor body comprising a first region of a first conductive type, an active region, a second region of a second conductive type and a coupling-out surface, wherein the first region, the active region and the second region are arranged along a stacking direction, wherein the active region extends from a rear surface opposite the coupling-out surface to the coupling-out surface along a longitudinal direction transverse to or perpendicular to the stacking direction, wherein the coupling-out surface is arranged plane-parallel to the rear surface, and wherein the coupling-out surface and the rear surface of the semiconductor body are produced by an etching process.

公开(公告)号：US10937922B2

公开(公告)日：2021-03-02

申请号：US16485400

申请日：2018-02-27

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Jens Ebbecke ,  Sebastian Taeger

IPC: H01L33/00 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44

Abstract: A method for exposing side surfaces of a semiconductor body is disclosed. In an embodiment a method includes providing the semiconductor body having a laterally extending first main surface, forming a plurality of vertical side surfaces by partially removing material of the semiconductor body and thereby removing the first main surface in places, wherein each of the side surfaces forms an angle (α) between 110° and 160° inclusive with the remaining first main surface, applying a protective layer onto the semiconductor body so that, in a plan view, the protective layer completely covers the remaining first main surface and the obliquely formed side surfaces and partially removing the protective layer so that the protective layer is removed in regions on the obliquely formed side surfaces because of an inclination and remains at least partially preserved in regions on the remaining first main surface during a common process operation.

公开(公告)号：US10270223B2

公开(公告)日：2019-04-23

申请号：US15578237

申请日：2016-05-25

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Jens Ebbecke

IPC: H01S5/10 ,  H01S5/02 ,  H01S5/022 ,  H01S5/30 ,  H01S5/343

Abstract: A semiconductor laser diode and a method for manufacturing a semiconductor laser diode are disclosed. In an embodiment, the semiconductor laser diode includes a semiconductor layer sequence having an active zone, wherein the semiconductor layer sequence has a cylindrical shape, wherein a cylinder axis of the semiconductor layer sequence is perpendicular to a layer plane of the semiconductor layer sequence, and wherein the semiconductor laser diode is configured to emit radiation perpendicularly to the cylinder axis of the semiconductor layer sequence.

公开(公告)号：US20180152002A1

公开(公告)日：2018-05-31

申请号：US15578237

申请日：2016-05-25

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Jens Ebbecke

IPC: H01S5/10 ,  H01S5/30 ,  H01S5/022 ,  H01S5/02 ,  H01S5/343

CPC classification number: H01S5/1075 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/0228 ,  H01S5/3054 ,  H01S5/343

Abstract: A semiconductor laser diode and a method for manufacturing a semiconductor laser diode are disclosed. In an embodiment, the semiconductor laser diode includes a semiconductor layer sequence having an active zone, wherein the semiconductor layer sequence has a cylindrical shape, wherein a cylinder axis of the semiconductor layer sequence is perpendicular to a layer plane of the semiconductor layer sequence, and wherein the semiconductor laser diode is configured to emit radiation perpendicularly to the cylinder axis of the semiconductor layer sequence.