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29 条记录 (耗时 0.029 秒)

    Vehicle anti-theft system incorporated with internal antennas
    21.
    发明授权
    Vehicle anti-theft system incorporated with internal antennas 有权
    内置天线的车辆防盗系统

    公开(公告)号：US07948358B2

    公开(公告)日：2011-05-24

    申请号：US11431189

    申请日：2006-05-09

    申请人： Osamu Hidaka ,  Kimiharu Mishima ,  Makoto Honkawa

    发明人： Osamu Hidaka ,  Kimiharu Mishima ,  Makoto Honkawa

    IPC分类号： G05B19/00 ,  B60R25/00

    CPC分类号： B60R25/04 ,  B60R25/2063 ,  B60R25/24

    摘要： In a vehicle anti-theft system including an immobilizer system and a keyless entry system provided adjacent to a key cylinder, an immobilizer system antenna (5) is insert molded in an annular member (3) surrounding a key opening (2) of the key cylinder and a keyless entry system antenna (9) is incorporated in a housing (6, 7) which is integrally formed with the annular member. Thereby, the immobilizer system antenna and keyless entry system antenna can be accommodated in a common unit while suitably spacing them away from each other. Therefore, without requiring any special shielding arrangement, the two antennal can perform favorably while the overall size of the system can be minimized.

    摘要翻译： 在车辆防盗系统中，包括防盗系统和与钥匙筒相邻设置的无钥匙进入系统，防盗系统天线（5）嵌入成型在围绕钥匙钥匙（2）的环形件（3）中， 气缸和无钥匙进入系统天线（9）结合在与环形构件一体形成的壳体（6,7）中。 因此，防盗系统天线和无钥匙进入系统天线可以容纳在公共单元中，同时适当地将它们彼此间隔开。 因此，不需要任何特殊的屏蔽装置，两个触角可以有利地执行，同时可以使系统的总体尺寸最小化。

    Semiconductor memory device including a source and a drain of a memory cell transistor formed between electrodes and a method of fabrication the same
    22.
    发明授权
    Semiconductor memory device including a source and a drain of a memory cell transistor formed between electrodes and a method of fabrication the same 有权
    半导体存储器件包括形成在电极之间的存储单元晶体管的源极和漏极及其制造方法

    公开(公告)号：US07795657B2

    公开(公告)日：2010-09-14

    申请号：US11772396

    申请日：2007-07-02

    申请人： Osamu Hidaka

    发明人： Osamu Hidaka

    IPC分类号： H01L27/108 ,  H01L29/94 ,  H01L25/065

    CPC分类号： H01L27/11507 ,  H01L27/0688 ,  H01L27/11502

    摘要： A semiconductor memory device includes a memory cell portion, the memory cell portion including a ferroelectric capacitor and a memory cell transistor, the ferroelectric capacitor including a first electrode film on a semiconductor substrate, a second electrode film over the first electrode film, and a ferroelectric film between the first and second electrode films, and the memory cell transistor including a source and a drain between the first and second electrode films, wherein either the source or the drain connects to the first electrode film, and the other of the source or the drain connects to the second electrode film.

    摘要翻译： 半导体存储器件包括存储单元部分，存储单元部分包括铁电电容器和存储单元晶体管，该铁电电容器包括半导体衬底上的第一电极膜，第一电极膜上的第二电极膜和铁电体 第一和第二电极膜之间的膜，以及在第一和第二电极膜之间包括源极和漏极的存储单元晶体管，其中源极或漏极连接到第一电极膜，源极或漏极中的另一个 漏极连接到第二电极膜。

    Semiconductor device and method of fabricating the same
    24.
    发明申请
    Semiconductor device and method of fabricating the same 审中-公开
    半导体装置及其制造方法

    公开(公告)号：US20060231880A1

    公开(公告)日：2006-10-19

    申请号：US11399313

    申请日：2006-04-07

    申请人： Koji Yamakawa ,  Soichi Yamazaki ,  Osamu Hidaka

    发明人： Koji Yamakawa ,  Soichi Yamazaki ,  Osamu Hidaka

    IPC分类号： H01L29/94 ,  H01L21/8242

    CPC分类号： H01L27/11507 ,  H01L27/11502 ,  H01L28/57 ,  H01L28/65 ,  H01L28/75

    摘要： According to an aspect of the invention, there is provided a semiconductor device including a semiconductor substrate, and a capacitor formed above the semiconductor substrate by sandwiching a dielectric film between a lower electrode and upper electrode, wherein the upper electrode has a stacked structure including a first MOx type conductive oxide film (M is a metal element, O is an oxygen element, and x>0) having a crystal structure, and a crystal grain size of the first MOx type conductive oxide film is 5 to 100 nm.

    摘要翻译： 根据本发明的一个方面，提供了一种包括半导体衬底的半导体器件和通过在下电极和上电极之间夹着电介质膜而形成在半导体衬底之上的电容器，其中上电极具有包括 第一MO x型导电氧化物膜（M是金属元素，O是氧元素，x> 0），具有晶体结构，第一MO x的晶粒尺寸 型导电氧化膜为5〜100nm。

    SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR MEMORY DEVICE
    27.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR MEMORY DEVICE 有权
    半导体存储器件以及制造半导体存储器件的方法

    公开(公告)号：US20080061333A1

    公开(公告)日：2008-03-13

    申请号：US11772396

    申请日：2007-07-02

    申请人： Osamu Hidaka

    发明人： Osamu Hidaka

    IPC分类号： H01L27/108 ,  H01L21/8242

    CPC分类号： H01L27/11507 ,  H01L27/0688 ,  H01L27/11502

    摘要： According to an aspect of the present invention, there is provided a semiconductor memory device, comprising a memory cell portion, the memory cell portion having a ferroelectric capacitor and a memory cell transistor, the ferroelectric capacitor having a plurality of electrode films and a ferroelectric film, the plurality of electrode films being stacked in layer on a semiconductor substrate, the ferroelectric film being formed between the plurality of electrode films, a source and a drain of the memory cell transistor being formed between the electrode films, the source and the drain directly contacting the ferroelectric film or indirectly contacting the ferroelectric film via an insulator, one of the source and the drain being connected to one end of the electrode film, the other of the source and the drain being connected to the other end of the electrode film.

    摘要翻译： 根据本发明的一个方面，提供了一种半导体存储器件，包括存储单元部分，具有铁电电容器的存储单元部分和存储单元晶体管，具有多个电极膜的铁电电容器和铁电体膜 所述多个电极膜层叠在半导体衬底上，所述铁电体膜形成在所述多个电极膜之间，所述存储单元晶体管的源极和漏极形成在所述电极膜之间，所述源极和漏极直接形成 与铁电体膜接触或经由绝缘体间接接触强电介质膜，源极和漏极之一连接到电极膜的一端，源极和​​漏极中的另一个连接到电极膜的另一端。

    FERROELECTRIC MEMORY CELL AND MANUFACTURING METHOD THEREOF
    28.
    发明申请
    FERROELECTRIC MEMORY CELL AND MANUFACTURING METHOD THEREOF 审中-公开
    电磁记忆体及其制造方法

    公开(公告)号：US20070272959A1

    公开(公告)日：2007-11-29

    申请号：US11753292

    申请日：2007-05-24

    申请人： Osamu Hidaka ,  Iwao Kunishima

    发明人： Osamu Hidaka ,  Iwao Kunishima

    IPC分类号： H01L29/94

    CPC分类号： H01L27/11507 ,  H01L27/11502 ,  H01L28/55 ,  H01L29/40111 ,  H01L29/516

    摘要： A method of manufacturing a ferroelectric memory cell includes: forming device isolation regions; and source/drain regions; forming a gate insulating film on the semiconductor substrate; forming a gate electrode on the gate insulating film; forming; forming a contact plug to be connected to one of the source/drain regions. The method further includes: forming a lower electrode to be connected to the contact plug; depositing a sol-gel solution containing a ferroelectric minute crystal on the lower electrode to form a ferroelectric film; forming an upper electrode on the ferroelectric film; forming a second interlayer insulating film. The method further includes: forming a capacitor contact plug to be connected to the upper electrode; forming a substrate contact plug to be connected to the other one of the source/drain regions; and forming first and second wiring layers to be connected to the capacitor contact plug and the substrate contact plug, respectively.

    摘要翻译： 制造铁电存储单元的方法包括：形成器件隔离区; 和源极/漏极区域; 在半导体衬底上形成栅极绝缘膜; 在栅极绝缘膜上形成栅电极; 成型; 形成要连接到源极/漏极区域之一的接触插塞。 该方法还包括：形成要连接到接触插塞的下电极; 在下部电极上沉​​积含有铁电微晶的溶胶 - 凝胶溶液，形成铁电体膜; 在所述强电介质膜上形成上电极; 形成第二层间绝缘膜。 该方法还包括：形成要连接到上电极的电容器接触插塞; 形成要连接到所述源极/漏极区域中的另一个的衬底接触插塞; 以及分别形成要连接到电容器接触插塞和基板接触插塞的第一和第二布线层。

    Semiconductor device and method for manufacturing the same
    29.
    发明申请
    Semiconductor device and method for manufacturing the same 审中-公开
    半导体装置及其制造方法

    公开(公告)号：US20070096180A1

    公开(公告)日：2007-05-03

    申请号：US11524267

    申请日：2006-09-21

    申请人： Koji Yamakawa ,  Soichi Yamazaki ,  Osamu Hidaka ,  Osamu Arisumi

    发明人： Koji Yamakawa ,  Soichi Yamazaki ,  Osamu Hidaka ,  Osamu Arisumi

    IPC分类号： H01L29/94 ,  H01L29/76 ,  H01L31/00

    CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65

    摘要： A semiconductor device includes a semiconductor substrate, and a ferroelectric capacitor provided on the semiconductor substrate, the ferroelectric capacitor comprising a lower electrode, a first ferroelectric film provided on the lower electrode including Pb(ZrxTi1-x)O3 and having a tetragonal crystal system whose crystal direction is oriented in a direction, a second ferroelectric film provided on the first ferroelectric film including Pb(ZryTi1-y)O3 and having a tetragonal crystal system whose crystal direction is oriented in the direction, and an upper electrode provided on the second ferroelectric film.

    摘要翻译： 半导体器件包括半导体衬底和设置在半导体衬底上的铁电电容器，所述铁电电容器包括下电极，设置在下电极上的第一铁电体膜包括Pb（Zr x Ti） 具有晶体方向取向为<111>方向的四方晶系的第一铁电体膜，设置在包含Pb（Zr）的第一铁电体膜上的第二铁电体膜 具有晶体方向取向为<111>方向的四方晶系，并且具有上部 设置在第二铁电体膜上的电极。