公开(公告)号：US20250150731A1

公开(公告)日：2025-05-08

申请号：US19013604

申请日：2025-01-08

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Tokuhiko TAMAKI

IPC: H04N25/75 ,  H04N23/54 ,  H04N23/55 ,  H04N25/585 ,  H04N25/702 ,  H10F39/00

Abstract: An imaging device including a pixel including a first cell and a second cell, where the first cell includes a first photoelectric converter that converts incident light into charges, the second cell including a second photoelectric converter that converts incident light into charges, a number of charges generated in the second cell is greater than a number of charges generated in the first cell when the first and second cells receive incident light, and a number of saturation charges of the first cell is greater than a number of saturation charges of the second cell.

公开(公告)号：US20240292121A1

公开(公告)日：2024-08-29

申请号：US18649584

申请日：2024-04-29

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yasuo MIYAKE ,  Masashi MURAKAMI ,  Tokuhiko TAMAKI ,  Yoshiaki SATOU

IPC: H04N25/53 ,  H01L27/146 ,  H10K39/32

CPC classification number: H04N25/53 ,  H01L27/14609 ,  H01L27/14612 ,  H10K39/32

Abstract: An imaging device including pixels each including a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode. The imaging device further including voltage supply circuitry, where the voltage supply circuitry supplies a first potential difference between the first electrode and the second electrode in an exposure period and a second potential difference between the first electrode and the second electrode in a non-exposure period, and the first potential difference is different from the second potential difference.

公开(公告)号：US20200303436A1

公开(公告)日：2020-09-24

申请号：US16897509

申请日：2020-06-10

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Masayuki TAKASE ,  Takayoshi YAMADA ,  Tokuhiko TAMAKI

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/353

Abstract: An imaging device includes a photoelectric conversion layer having a first surface and a second surface opposite to the first surface; a counter electrode on the first surface; a first electrode on the second surface; a second electrode on the second surface, the second electrode being spaced from the first electrode; and an auxiliary electrode on the second surface between the first electrode and the second electrode. The auxiliary electrode is spaced from the first electrode and the second electrode, where a shortest distance between the first electrode and the auxiliary electrode is different from a shortest distance between the second electrode and the auxiliary electrode.

公开(公告)号：US20190132540A1

公开(公告)日：2019-05-02

申请号：US16232633

申请日：2018-12-26

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Tokuhiko TAMAKI

IPC: H04N5/378 ,  H04N5/369 ,  H04N5/225 ,  H04N5/355

Abstract: An imaging device includes a first image pickup cell having a first photoelectric converter converting incident light into first charges, the first photoelectric converter including a first pixel electrode, a first electrode, and a first photoelectric conversion region between the first pixel electrode and the first electrode, and a first charge storage node coupled to the first pixel electrode for accumulating the first charges; a second image pickup cell having a second photoelectric converter converting incident light into second charges, the second photoelectric converter including a second pixel electrode, a second electrode, and a second photoelectric conversion region between the second pixel electrode and the second electrode, and a second charge storage node coupled to the second pixel electrode for accumulating the second charges. The first pixel electrode has a first area, and the second pixel electrode has a second area less than the first area.

公开(公告)号：US20190081099A1

公开(公告)日：2019-03-14

申请号：US16186243

申请日：2018-11-09

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Tokuhiko TAMAKI ,  Junji HIRASE ,  Shigeo YOSHII

IPC: H01L27/146

Abstract: An imaging device including a semiconductor substrate; and a pixel. The pixel includes a photoelectric converter having a first electrode, a second electrode and a photoelectric conversion layer sandwiched between the first electrode and the second electrode, the photoelectric converter located above a surface of the semiconductor substrate; a first transistor that includes a part of the semiconductor substrate and detects electric charges; and a second transistor that includes a gate electrode and initializes a voltage of the first electrode. The first electrode, the second transistor, and the first transistor are arranged in that order toward the semiconductor substrate from the first electrode in cross sectional view, and when viewed from the direction normal to the surface of the semiconductor substrate, a part of the gate electrode overlaps the first electrode, and another part of the gate electrode does not overlap the first electrode.

公开(公告)号：US20180114811A1

公开(公告)日：2018-04-26

申请号：US15850645

申请日：2017-12-21

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Yoshihiro SATO ,  Ryohei MIYAGAWA ,  Tokuhiko TAMAKI ,  Junji HIRASE ,  Yoshiyuki OHMORI ,  Yoshiyuki MATSUNAGA

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/363 ,  H01L21/266 ,  H01L21/8234

CPC classification number: H01L27/14643 ,  H01L21/266 ,  H01L21/823456 ,  H01L21/823481 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14665 ,  H01L27/14689 ,  H04N5/363 ,  H04N5/378

Abstract: Each unit pixel includes a photoelectric converter, an n-type impurity region forming an accumulation diode together with the semiconductor region, the accumulation diode accumulating a signal charge generated by the photoelectric converter, an amplifier transistor including a gate electrode electrically connected to the impurity region, and an isolation region formed around the amplifier transistor and implanted with p-type impurities. The amplifier transistor includes an n-type source/drain region formed between the gate electrode and the isolation region, and a channel region formed under the gate electrode. A gap in the isolation region is, in a gate width direction, wider at a portion including the channel region than at a portion including the source/drain region.

公开(公告)号：US20170221944A1

公开(公告)日：2017-08-03

申请号：US15487941

申请日：2017-04-14

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Tokuhiko TAMAKI ,  Hirohisa OHTSUKI ,  Ryohei MIYAGAWA ,  Motonori ISHII

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14636 ,  H01L27/14643 ,  H04N5/3698 ,  H04N5/3745

Abstract: A solid-state imaging device includes: pixels arranged in a matrix; a vertical signal line provided for each column, conveying a pixel signal; a power line provided for each column, proving a power supply voltage; and a feedback signal line provided for each column, conveying a signal from a peripheral circuit to a pixel, in which each of the pixels includes: an N-type diffusion layer; a photoelectric conversion element above the N-type diffusion layer; and a charge accumulation node between the N-type diffusion layer and the photoelectric conversion element, accumulating signal charge generated in the photoelectric conversion element, the feedback signal line, a metal line which is a part of the charge accumulation node, the vertical signal line, and the power line are disposed in a second interconnect layer, and the vertical signal line and the power line are disposed between the feedback signal line and the metal line.

公开(公告)号：US20150123180A1

公开(公告)日：2015-05-07

申请号：US14556093

申请日：2014-11-28

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Yoshihiro SATO ,  Ryohei MIYAGAWA ,  Tokuhiko TAMAKI ,  Junji HIRASE ,  Yoshiyuki OHMORI ,  Yoshiyuki MATSUNAGA

IPC: H01L27/146 ,  H01L21/266 ,  H01L21/8234

CPC classification number: H01L27/14643 ,  H01L21/266 ,  H01L21/823456 ,  H01L21/823481 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14665 ,  H01L27/14689 ,  H04N5/363 ,  H04N5/378

Abstract: Each unit pixel includes a photoelectric converter, an n-type impurity region forming an accumulation diode together with the semiconductor region, the accumulation diode accumulating a signal charge generated by the photoelectric converter, an amplifier transistor including a gate electrode electrically connected to the impurity region, and an isolation region formed around the amplifier transistor and implanted with p-type impurities. The amplifier transistor includes an n-type source/drain region formed between the gate electrode and the isolation region, and a channel region formed under the gate electrode. A gap in the isolation region is, in a gate width direction, wider at a portion including the channel region than at a portion including the source/drain region.

Abstract translation: 每个单位像素包括光电转换器，与半导体区域一起形成累积二极管的n型杂质区域，累积二极管累积由光电转换器产生的信号电荷;放大器晶体管，包括电连接到杂质区的栅电极 以及形成在放大晶体管周围并注入p型杂质的隔离区域。 放大器晶体管包括形成在栅极电极和隔离区域之间的n型源极/漏极区域和形成在栅电极下方的沟道区域。 在包括沟道区域的部分中，隔离区域中的间隙在栅极宽度方向上比在包括源极/漏极区域的部分处更宽。

公开(公告)号：US20150115339A1

公开(公告)日：2015-04-30

申请号：US14554450

申请日：2014-11-26

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Tokuhiko TAMAKI ,  Hirohisa OHTSUKI ,  Ryohei MIYAGAWA ,  Motonori ISHII

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14636 ,  H01L27/14643 ,  H04N5/3698 ,  H04N5/3745

Abstract: A solid-state imaging device includes: pixels arranged in a matrix; a vertical signal line provided for each column, conveying a pixel signal; a power line provided for each column, proving a power supply voltage; and a feedback signal line provided for each column, conveying a signal from a peripheral circuit to a pixel, in which each of the pixels includes: an N-type diffusion layer; a photoelectric conversion element above the N-type diffusion layer; and a charge accumulation node between the N-type diffusion layer and the photoelectric conversion element, accumulating signal charge generated in the photoelectric conversion element, the feedback signal line, a metal line which is a part of the charge accumulation node, the vertical signal line, and the power line are disposed in a second interconnect layer, and the vertical signal line and the power line are disposed between the feedback signal line and the metal line.

Abstract translation: 固态成像装置包括：以矩阵排列的像素; 为每列设置的垂直信号线，传送像素信号; 为每列设置的电源线，证明电源电压; 以及为每列提供的反馈信号线，将来自外围电路的信号传送到像素，其中每个像素包括：N型扩散层; N型扩散层上方的光电转换元件; 以及N型扩散层和光电转换元件之间的电荷累积节点，累积在光电转换元件中产生的信号电荷，反馈信号线，作为电荷累积结点的一部分的金属线，垂直信号线 并且电力线被布置在第二互连层中，并且垂直信号线和电力线设置在反馈信号线和金属线之间。

公开(公告)号：US20150084106A1

公开(公告)日：2015-03-26

申请号：US14555153

申请日：2014-11-26

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Kentaro NAKANISHI ,  Junji HIRASE ,  Kosaku SAEKI ,  Yoshinori TAKAMI ,  Takeshi HIDAKA ,  Tokuhiko TAMAKI

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14689

Abstract: A solid-state imaging device includes unit pixels formed on a semiconductor substrate. Each of the unit pixels includes a photoelectric converter, a floating diffusion, a pinning layer, and a pixel transistor. The pixel transistor includes a gate electrode formed on the semiconductor substrate, a source diffusion layer, and a drain diffusion layer. At least one of the source diffusion layer or the drain diffusion layer functions as the floating diffusion. The pinning layer is covered by the floating diffusion at a bottom and a side at a channel of the pixel transistor. A conductivity type of the floating diffusion is opposite to that of the pinning layer.

Abstract translation: 固态成像装置包括形成在半导体衬底上的单位像素。 每个单位像素包括光电转换器，浮动扩散，钉扎层和像素晶体管。 像素晶体管包括形成在半导体衬底上的栅电极，源极扩散层和漏极扩散层。 源极扩散层或漏极扩散层中的至少一个起到浮动扩散的作用。 钉扎层被像素晶体管的通道的底部和侧面处的浮动扩散覆盖。 浮动扩散的导电类型与钉扎层的导电类型相反。