PHOTODETECTOR
    21.
    发明申请

    公开(公告)号:US20220005848A1

    公开(公告)日:2022-01-06

    申请号:US17479835

    申请日:2021-09-20

    Abstract: A photodetector includes: a semiconductor substrate having a first main surface and a second main surface; a first semiconductor layer that is of a first conductivity type, and is included in the semiconductor substrate and closer to the first main surface than to the second main surface; a second semiconductor layer that is of a second conductivity type different from the first conductivity type, and is included in the semiconductor substrate and interposed between the first semiconductor layer and the second main surface; a multiplication region that causes avalanche multiplication to a charge generated in the semiconductor substrate through photoelectric conversion; a circuit region disposed alongside the first semiconductor layer in a direction parallel to the first main surface; at least one isolation transistor disposed in the circuit region; and an isolation region interposed between the first semiconductor layer and the circuit region.

    PHOTOSENSOR, IMAGE SENSOR, AND PHOTOSENSOR DRIVING METHOD

    公开(公告)号:US20210176413A1

    公开(公告)日:2021-06-10

    申请号:US17183213

    申请日:2021-02-23

    Abstract: The photosensor includes an APD that has a multiplication region including a photoelectric converter and includes a first capacitor connected to the multiplication region in parallel, and a first transistor connected between the APD and a first power supply (voltage VC). The first transistor applies a reverse bias of a power supply voltage (VC-VA), which is larger than a breakdown voltage VBD, between an anode and a cathode of the APD during a bias setting period by connecting the APD to the first power supply, and stops an avalanche multiplication phenomenon during a light exposing period by disconnecting the APD from the first power supply to accumulate charges generated by the avalanche multiplication phenomenon in the first capacitor.

    PHOTODETECTOR
    23.
    发明申请

    公开(公告)号:US20210028202A1

    公开(公告)日:2021-01-28

    申请号:US17039128

    申请日:2020-09-30

    Abstract: A photodetector includes: a semiconductor substrate having a first main surface and a second main surface; a first semiconductor layer that is of a first conductivity type, and is included in the semiconductor substrate and closer to the first main surface than to the second main surface; a second semiconductor layer that is of a second conductivity type different from the first conductivity type, and is included in the semiconductor substrate and interposed between the first semiconductor layer and the second main surface; a multiplication region that causes avalanche multiplication to a charge generated in the semiconductor substrate through photoelectric conversion; a circuit region disposed alongside the first semiconductor layer in a direction parallel to the first main surface; at least one isolation transistor disposed in the circuit region; and an isolation region interposed between the first semiconductor layer and the circuit region.

    SOLID-STATE IMAGING DEVICE
    24.
    发明申请
    SOLID-STATE IMAGING DEVICE 有权
    固态成像装置

    公开(公告)号:US20150137199A1

    公开(公告)日:2015-05-21

    申请号:US14572046

    申请日:2014-12-16

    Abstract: A solid-state imaging device according to the present disclosure includes: a charge storage region that stores a signal charge obtained through photoelectric conversion in a photoelectric conversion film; an amplification transistor that amplifies the signal charge stored in the charge storage region in a corresponding pixel; a contact plug that is electrically connected to the charge storage region and contains a semiconductor material; and a line that is disposed above the contact plug and contains a semiconductor material. The contact plug and the charge storage region are electrically connected, and the contact plug and a gate electrode of the amplification transistor are electrically connected via the line.

    Abstract translation: 根据本公开的固态成像装置包括:电荷存储区域,其在光电转换膜中存储通过光电转换获得的信号电荷; 放大晶体管,其放大存储在相应像素中的电荷存储区域中的信号电荷; 接触插塞,其电连接到电荷存储区域并且包含半导体材料; 以及设置在接触塞上方并包含半导体材料的线。 接触插塞和电荷存储区域电连接,并且放大晶体管的接触插塞和栅电极经由线电连接。

    OBJECT DETECTION SYSTEM AND OBJECT DETECTION METHOD

    公开(公告)号:US20230053841A1

    公开(公告)日:2023-02-23

    申请号:US17982104

    申请日:2022-11-07

    Abstract: An object detection system includes a light emitter, an optical sensor, a controller, and a signal processor. The controller controls the light emitter and the optical sensor to cause range segment signals to be outputted from the optical sensor for corresponding range segments. The signal processor includes: a target object information generator that includes a plurality of generators (a first generator through a fifth generator) capable of operating in parallel and generates items of target object information indicating features of target objects for the range segments; and storage that stores the items of target object information. The target object information generator compares a past one of the items of target object information stored in the storage with a feature of a current one of the target objects detected by the optical sensor to generate a corresponding one of the items of target object information.

    SOLID-STATE IMAGING APPARATUS AND METHOD OF DRIVING THE SAME

    公开(公告)号:US20190075265A1

    公开(公告)日:2019-03-07

    申请号:US16178396

    申请日:2018-11-01

    Abstract: An imaging device includes a photoelectric converter generating signal charge; a charge storage region storing the signal charge; a first transistor having a gate coupled to the charge storage region; a second transistor having a source and a drain; and voltage supply circuity supplying voltages varying with time. An output of the first transistor is fed back to the second transistor and is supplied to the charge storage region. A reset operation for discharging the signal charge in the charge storage region includes a first reset operation and a second reset operation. In the first reset operation, the second transistor changes from an OFF state to an ON state and then changes to an OFF state. In the second reset operation, the voltage supply circuity supplies the voltages to a gate of the second transistor so that the second transistor gradually changes from an OFF state to an ON state.

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