公开(公告)号：US20050037599A1

公开(公告)日：2005-02-17

申请号：US10882995

申请日：2004-07-01

Applicant: Aomar Halimaoui ,  Daniel Bensahel

Inventor： Aomar Halimaoui ,  Daniel Bensahel

IPC: H01L21/20 ,  H01L21/324 ,  C30B1/00 ,  H01L21/425

CPC classification number: H01L21/324 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02694 ,  H01L29/7842 ,  Y10S438/96

Abstract: A process for fabricating a strained layer of silicon or of a silicon/germanium alloy, includes: a) the formation of a layer (2) of silicon or of a silicon/germanium alloy on a layer (1) of a material having a modifiable lattice parameter; and b) the modification of the lattice parameter.

Abstract translation: 一种制造硅或硅/锗合金应变层的工艺包括：a）在具有可修改的材料的层（1）上形成硅层或硅/锗合金层（2） 晶格参数 和b）修改晶格参数。

公开(公告)号：US20120161292A1

公开(公告)日：2012-06-28

申请号：US13330146

申请日：2011-12-19

Applicant: Aomar Halimaoui ,  Marc Zussy

Inventor： Aomar Halimaoui ,  Marc Zussy

IPC: H01L29/02 ,  H01L21/762

CPC classification number: H01L29/0657 ,  H01L21/76251 ,  H01L29/16

Abstract: A process for assembling a first wafer and a second wafer each bevelled on their peripheries includes excavating the bevelled peripheral part of at least one first side of the first wafer to create a deposit bordering the region excavated in the material of the first wafer. The first side and a second side of the second wafer are then bonded together.

Abstract translation: 一种组装第一晶片和第二晶片的方法，每个在它们的周边上都是倾斜的，包括挖掘第一晶片的至少一个第一侧的斜切周边部分，以形成与在第一晶片的材料中挖出的区域接壤的沉积物。 然后将第二晶片的第一面和第二面接合在一起。

公开(公告)号：US20120094470A1

公开(公告)日：2012-04-19

申请号：US13240769

申请日：2011-09-22

Applicant: Daniel Bensahel ,  Aomar Halimaoui

Inventor： Daniel Bensahel ,  Aomar Halimaoui

IPC: H01L21/762

CPC classification number: H01L29/7849 ,  H01L21/187 ,  H01L21/3063 ,  H01L29/06 ,  H01L29/32 ,  H01L29/78

Abstract: A method for forming an electronic circuit on a strained semiconductor substrate, including the steps of: forming, on a first surface of a semiconductor substrate, electronic components defining electronic chips to be sawn; and forming at least portions of a layer of a porous semiconductor material on the side of a second surface of the semiconductor substrate, opposite to the first surface, to bend the semiconductor substrate.

Abstract translation: 一种在应变半导体衬底上形成电子电路的方法，包括以下步骤：在半导体衬底的第一表面上形成限定要锯切的电子芯片的电子部件; 以及在所述半导体衬底的与所述第一表面相对的一侧的所述一侧上形成多孔半导体材料层的至少一部分以弯曲所述半导体衬底。

公开(公告)号：US20100289123A1

公开(公告)日：2010-11-18

申请号：US12679271

申请日：2008-09-26

Applicant: Aomar Halimaoui

Inventor： Aomar Halimaoui

IPC: H01L29/02 ,  H01L21/20

CPC classification number: H01L29/0649 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/76262 ,  H01L21/764

Abstract: A method for making a silicon layer extending on an insulation layer, including the steps of forming a silicon-germanium layer on at least a portion of a silicon wafer; transforming portions of the silicon-germanium layer into porous silicon pads; growing a monocrystalline silicon layer on the silicon-germanium layer and on the porous silicon pads; removing the silicon-germanium layer; oxidizing the porous silicon pads; and depositing an insulation material on the silicon layer.

Abstract translation: 一种用于制造在绝缘层上延伸的硅层的方法，包括以下步骤：在硅晶片的至少一部分上形成硅 - 锗层; 将硅 - 锗层的部分转变成多孔硅垫; 在硅 - 锗层和多孔硅垫上生长单晶硅层; 去除硅 - 锗层; 氧化多孔硅垫; 以及在所述硅层上沉积绝缘材料。

公开(公告)号：US20080197447A1

公开(公告)日：2008-08-21

申请号：US12031202

申请日：2008-02-14

Applicant: Aomar Halimaoui ,  Yves Morand ,  Yves Campidelli ,  Olivier Kermarrec

Inventor： Aomar Halimaoui ,  Yves Morand ,  Yves Campidelli ,  Olivier Kermarrec

IPC: H01L21/782 ,  H01L27/12

CPC classification number: H01L21/76245

Abstract: A method for manufacturing an insulated semiconductor layer, including: forming a porous silicon layer on a single-crystal silicon surface; depositing an insulating material so that it penetrates into the pores of the porous silicon layer; eliminating the insulating material to expose the upper surface of the porous silicon; and growing by epitaxy a semiconductor layer.

Abstract translation: 一种绝缘半导体层的制造方法，包括：在单晶硅表面上形成多孔硅层; 沉积绝缘材料使其渗入多孔硅层的孔中; 消除绝缘材料暴露多孔硅的上表面; 并通过外延生长半导体层。

公开(公告)号：US07279404B2

公开(公告)日：2007-10-09

申请号：US10882995

申请日：2004-07-01

Applicant: Aomar Halimaoui ,  Daniel Bensahel

Inventor： Aomar Halimaoui ,  Daniel Bensahel

IPC: H01L21/20

CPC classification number: H01L21/324 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02694 ,  H01L29/7842 ,  Y10S438/96

Abstract: A process for fabricating a strained layer of silicon or of a silicon/germanium alloy, includes:a) the formation of a layer (2) of silicon or of a silicon/germanium alloy on a layer (1) of a material having a modifiable lattice parameter; andb) the modification of the lattice parameter.

Abstract translation: 一种制造硅或硅/锗合金应变层的工艺包括：a）在具有可修改的材料的层（1）上形成硅层或硅/锗合金层（2） 晶格参数 和b）修改晶格参数。

公开(公告)号：US20070001227A1

公开(公告)日：2007-01-04

申请号：US11454398

申请日：2006-06-16

Applicant: Jean-Charles Barbe ,  Sylvian Barraud ,  Claire Fenouillet-Beranger ,  Claire Gallon ,  Aomar Halimaoui

Inventor： Jean-Charles Barbe ,  Sylvian Barraud ,  Claire Fenouillet-Beranger ,  Claire Gallon ,  Aomar Halimaoui

IPC: H01L27/12

CPC classification number: H01L29/7842 ,  H01L29/1033 ,  H01L29/66636 ,  H01L29/78618

Abstract: Transistor type semiconducting device comprising: a substrate, an insulating layer comprising sidewalls formed on each part of the source zone and the drain zone, drain, channel and source zones, the channel zone being formed on the insulating layer and being strained by the drain and the source zones, between the side parts, a grid, separated from the channel by a grid insulator.

Abstract translation: 晶体管型半导体器件包括：衬底，绝缘层，包括形成在源极区的每个部分上的侧壁和漏极区，漏极，沟道和源极区，沟道区形成在绝缘层上并被漏极应变， 源区域之间，在侧面部分之间，通过栅极绝缘体与沟道隔开的栅极。

公开(公告)号：US06287936B1

公开(公告)日：2001-09-11

申请号：US09304887

申请日：1999-05-04

Applicant: Ernesto Perea ,  Guillermo Bomchil ,  Aomar Halimaoui

Inventor： Ernesto Perea ,  Guillermo Bomchil ,  Aomar Halimaoui

IPC: H01L2176

CPC classification number: H01L28/10 ,  H01L21/3063 ,  H01L27/0688 ,  H01L27/08

Abstract: The method is for forming porous silicon in a silicon substrate, in particular for improving the quality factor of an inductive circuit produced on a silicon semiconductor wafer which also incorporates integrated transistors. The rear face of the wafer, already incorporating the transistors and the inductive circuit on its front face, is placed in contact with an acid electrolyte containing hydrofluoric acid and at least one other acid. An anodic oxidation of the silicon of the wafer at the rear face is carried out so as to convert this silicon into porous silicon over a predetermined height from the rear face which is in contact with the electrolyte.

Abstract translation: 该方法用于在硅衬底中形成多孔硅，特别是用于改善在还包含集成晶体管的硅半导体晶片上产生的感应电路的品质因数。 已经将晶体管和感应电路结合在其前表面上的晶片的后表面与含有氢氟酸和至少一种其它酸的酸性电解液接触。 在背面进行晶片的硅的阳极氧化，以便将其从与电解质接触的背面预定的高度转化为多孔硅。